CN107112215A - The method for supporting and its support meanss of semiconductor crystal wafer - Google Patents
The method for supporting and its support meanss of semiconductor crystal wafer Download PDFInfo
- Publication number
- CN107112215A CN107112215A CN201580060866.4A CN201580060866A CN107112215A CN 107112215 A CN107112215 A CN 107112215A CN 201580060866 A CN201580060866 A CN 201580060866A CN 107112215 A CN107112215 A CN 107112215A
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- Prior art keywords
- chassis
- supporting
- base portion
- pin
- leading section
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
The method for supporting of semiconductor crystal wafer, for the semiconductor crystal wafer being heat-treated by using the rapid temperature rise and drop annealing device of heating lamp, is flatly supported using at least 3 supporting pins for being fixed on chassis in the top on chassis in the lower surface of wafer.In the method for supporting, supporting pin is integrally formed with：The leading section of the contact site contacted with the lower surface with semiconductor crystal wafer, the base portion for being fixed on chassis and from leading section to base portion untill cylindrical portion, leading section is formed as sophisticated thinner than cylindrical portion, and supporting pin is not configured obliquely in the way of the vertical linear contact lay that chassis side is hung down with from contact site by cylindrical portion and base portion.
Description
Technical field
The present invention is on to using the semiconductor crystal wafer being heat-treated using the rapid temperature rise and drop annealing device of heating lamp
The method for supporting and its support meanss for the semiconductor crystal wafer being flatly supported.
In addition, the application advocate based on November 12nd, 2014 Japanese publication Patent 2014-229393 it is preferential
Power, Patent 2014-229393 full content is quoted in the application.
Background technology
In the development of electronics/communication equipment in recent years, the semiconductor integrated circuit as its center（LSI）Technology
Progressive ratio be significantly made that contribution.Typically, semiconductor crystal wafer is used in the manufacture of LSI etc. semiconductor devices, should be partly
Semiconductor wafer will be to that will utilize the lifting of bavin formula（CZ：Czochralski）The semiconductor monocrystal block of method lifting（ingot）Cut into slices and obtain
Wafer, implement grinding, chamfer machining etc. and formed.
In manufacturing procedure such, using the device fabrication or semiconductor crystal wafer itself of semiconductor crystal wafer,
For example, on wafer top layer, in order to form zero defect layer and/or in order to form oxygen precipitate and be controlled by, implement heat treatment.Make
For the heat treating process, it is known to use RTA（Flash annealing：Rapid Thermal Annealing）The utilization of device is infrared
The rapid temperature rise and drop heat treating process of the heating lamp of line.In the heat treating process, determined temperature can be climbed to, and it is warm from it
The quick cooling of degree, so thus, it is possible to be heat-treated with very short time to semiconductor crystal wafer.
Require to be heat-treated semiconductor crystal wafer with more than 1000 DEG C of high temperature in device process, to this from existing
Semiconductor crystal wafer heat treatment step in the problem of point be：In the case where implementing heat treatment with more than 1000 DEG C of high temperature,
It can be produced in crystal column surface and be referred to as sliding（slip）The defect of dislocation.If occurring such slip dislocation, wafer is not only reduced
Mechanical strength, harmful effect also is brought to device property.
Slip dislocation be with supporting pin support semiconductor crystal wafer be heat-treated when because semiconductor crystal wafer with support
The local temperature of the part of pin contacts is reduced and occurred.The reason for local temperature of the wafer is reduced is heated crystalline substance
Round heat to supporting pin escape this to supporting pin the masking of phenomenon of Heat and supporting pin towards wafer lower surface support pin joint
Shading phenomenon caused by this supporting pin of the light of the infrared lamp of contact portion, there is the more high more incidental tendency of heat treatment temperature.
Till now, Patent Document 1 discloses the generation of defect caused by slip dislocation when suppressing heat treatment
Semiconductor crystal wafer method for supporting and support meanss.In the method for supporting and support meanss of the semiconductor crystal wafer, such as Fig. 7 institutes
Show, using multiple supporting pins 21 in lower surface WBWhen flatly supporting the semiconductor crystal wafer W being heat-treated, make as supporting pin 21
With the part of the upper surface 21a with flat shape, and it is set to make the upper surface 21a of supporting pin 21 for semiconductor crystal wafer W
Lower surface WBInclined state, the upper surface 21a of supporting pin 21 with formed by the side 21c of supporting pin 21 on the 21d of corner
Carry and support semiconductor crystal wafer W.Specifically, pin leading section 21u upper surface 21a is formed as orthogonal for bearing pin 21b
Flat shape, on chassis（base tray）20 upper surface 20a, be connected with by pin 21 using for vertical direction as tilt angle alpha
And the pin support that the state toppled over is kept（pin holder）12.Retaining hole 12a is formed with pin support 12, by pin 21 with right
Kept in vertical direction for the state that tilt angle alpha is toppled over.
According to the method for supporting of above-mentioned patent document 1, supporting pin 21 becomes formed by the handy 21a of surface thereon and side 21c
Corner 21d（The topmost at the edge of wire）With semiconductor crystal wafer W lower surface WBContact, therefore, it is possible to reduce supporting pin 21 with
Semiconductor crystal wafer lower surface WBContact area, thereby, it is possible to reduce the lower surface W from semiconductor crystal wafer WBEscape to supporting pin 21
The heat of ease, the slip dislocation for reducing the temperature difference in semiconductor crystal wafer W face and can suppressing to produce by thermal stress causes
Defect generation.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2011-29225 publications（Claim 1, paragraph [0014], [0059]~[0064],
Fig. 9）.
The content of the invention
The invention problem to be solved
However, in the method for supporting of the patent document 1 shown in Fig. 7, reducing supporting pin 21 and semiconductor crystal wafer lower surface WB's
Contact area, can reduce the lower surface W from semiconductor crystal wafer WBThe heat output escaped to supporting pin 21, but because supporting pin
21 cylindrical portion 21e is located at from the lower surface W with semiconductor crystal wafer WBThe leading section 21u of the supporting pin 21 of contact corner 21d
On the vertical line X hung down, so towards semiconductor crystal wafer lower surface WBCorner 21d infrared lamp light by supporting pin 21
Cylindrical portion 21e covers.Therefore, in the method for supporting of patent document 1, the shading of diagonal section 21d caused by supporting pin 21 is produced
Phenomenon, can still cause the local temperature of wafer during heat treatment semiconductor wafer reduces, and is brought up to by heat treatment temperature
The generation of slip dislocation can not be reliably prevented at 1300 DEG C.
It is an object of the invention to provide the method for supporting of semiconductor crystal wafer and its support meanss, the method for supporting and its branch
Support arrangement reduces the heat transfer from heated wafer to supporting pin, and eliminate direction when being heat-treated to semiconductor crystal wafer
The infrared lamp of the supporting pin contact site of wafer lower surface is because the shading of supporting pin, even if the heat treatment of 1300 DEG C of high temperature
Reliably prevent the generation of slip dislocation.
Scheme for solving problem
The 1st viewpoint of the present invention, as shown in Figures 1 and 2, on the method for supporting of semiconductor crystal wafer, for by using heating
The rapid temperature rise and drop annealing device of lamp utilizes at least 3 supporting pins for being fixed on chassis 52 come the semiconductor crystal wafer W being heat-treated
51 carry out lower surface W of the top on chassis 52 in wafer WBFlatly it is supported, it is characterised in that the overall landform of supporting pin 51
Cheng You：With the lower surface W with semiconductor crystal wafer WBThe contact site Y of contact leading section 51a, the base portion for being fixed on chassis 52
It is thinner than cylindrical portion 51c that 51b and the cylindrical portion 51c untill the leading section 51a to base portion 51b, leading section 51a are formed as tip,
Obliquely configured in the way of cylindrical portion 51c and base portion 51b are not contacted with the vertical line X hung down from the side of contact site Y-direction chassis 52
Supporting pin 51.
The 2nd viewpoint of the present invention is the invention based on the 1st viewpoint, on the method for supporting of semiconductor crystal wafer, such as Fig. 2 institutes
Show, the upper surface 52a on chassis 52 is formed with recess 52b, base portion 51b insertion recess 52b and is fixed on chassis 52.
The 3rd viewpoint of the present invention is the invention based on the 2nd viewpoint, on the method for supporting of semiconductor crystal wafer, such as Fig. 2 institutes
Show, base portion 51b insertion recess 52b are simultaneously directly anchored to chassis 52 using welding.
The 4th viewpoint of the present invention is the invention based on the 1st viewpoint, on the method for supporting of semiconductor crystal wafer, such as Fig. 3 and figure
Shown in 4, the upper surface 52a on chassis 52 is connected with the pin support 54 for keeping base portion 51b or base portion 51b and cylindrical portion 51c, and pin
Support 54 is configured in the way of not contacted with the vertical line X hung down from the side of contact site Y-direction chassis 52.
The 5th viewpoint of the present invention is the invention based on the 1st viewpoint, on the method for supporting of semiconductor crystal wafer, such as Fig. 5 institutes
Show, being formed with chassis 52 enables base portion 51b or base portion 51b and cylindrical portion 51c insertions through hole 52c, on chassis 52
Lower surface 52d is connected with the base portion 51b or base portion 51b and cylindrical portion 51c that keep insertion through hole 52c pin support 55, and pin
Support 55 is configured in the way of not contacted with the vertical line X hung down from the side of contact site Y-direction chassis 52.
The 6th viewpoint of the present invention is the invention of any viewpoint based on the 1st to the 5th viewpoint, on semiconductor crystal wafer
Method for supporting, the material of supporting pin 51 is quartz or SiC, and the material on chassis 52 is quartz.
The 7th viewpoint of the present invention is the invention of any viewpoint based on the 1st to the 6th viewpoint, on semiconductor crystal wafer
Method for supporting, as shown in figure 1, supporting pin 51 is obliquely matched somebody with somebody in the way of leading section 51a more leans on the outside on chassis 52 than base portion 51b
Put.
The 8th viewpoint of the present invention is the invention of any viewpoint based on the 1st to the 6th viewpoint, on semiconductor crystal wafer
Method for supporting, as shown in fig. 6, supporting pin 51 is obliquely matched somebody with somebody in the way of leading section 51a more leans on the inner side on chassis 52 than base portion 51b
Put.
The 9th viewpoint of the present invention, as shown in Figures 1 and 2, is flatly supporting the rapid temperature rise and drop by using heating lamp
The support meanss 50 for the semiconductor crystal wafer W that annealing device is heat-treated, it is characterised in that with least 3 supporting pins 51
With the chassis 52 for immovable anchor pin 51, supporting pin 51 is integrally formed with：With the lower surface W with semiconductor crystal wafer WBConnect
Tactile contact site Y leading section 51a, the base portion 51b for being fixed on chassis 52 and the cylinder untill the leading section 51a to base portion 51b
It is thinner than cylindrical portion 51c that shape portion 51c, leading section 51a are formed as tip, with cylindrical portion 51c and base portion 51b not with from contact site Y-direction
The mode for the vertical line X contacts that the side of chassis 52 is hung down obliquely configures supporting pin 51.
The 10th viewpoint of the present invention is the invention based on the 9th viewpoint, on the support meanss of semiconductor crystal wafer, such as Fig. 2 institutes
Show, the upper surface 52a on chassis 52 is formed with recess 52b, base portion 51b insertion recess 52b and is fixed on chassis 52.
The 11st viewpoint of the present invention is the invention based on the 10th viewpoint, on the support meanss of semiconductor crystal wafer, such as Fig. 2 institutes
Show, base portion 51b insertion recess 52b are simultaneously directly anchored to chassis 52 using welding.
The 12nd viewpoint of the present invention is the invention based on the 9th viewpoint, on the support meanss of semiconductor crystal wafer, such as Fig. 3 and
Shown in Fig. 4, the upper surface 52a on chassis 52 is connected with the pin support 54 for keeping base portion 51b or base portion 51b and cylindrical portion 51c, and
Pin support 54 is configured in the way of not contacted with the vertical line X hung down from the side of contact site Y-direction chassis 52.
The 13rd viewpoint of the present invention is the invention based on the 9th viewpoint, on the support meanss of semiconductor crystal wafer, such as Fig. 5 institutes
Show, being formed with chassis 52 enables base portion 51b or base portion 51b and cylindrical portion 51c insertions through hole 52c, on chassis 52
Lower surface 52d is connected with the base portion 51b or base portion 51b and cylindrical portion 51c that keep insertion through hole 52c pin support 55, and pin
Support 55 is configured in the way of not contacted with the vertical line X hung down from the side of contact site Y-direction chassis 52.
The 14th viewpoint of the present invention is the invention of any viewpoint based on the 9th to the 13rd viewpoint, on semiconductor crystal wafer
Support meanss, the material of supporting pin 51 is quartz or SiC, and the material on chassis 52 is quartz.
The 15th viewpoint of the present invention is the invention of any viewpoint based on the 9th to the 14th viewpoint, on semiconductor crystal wafer
Support meanss, as shown in figure 1, supporting pin 51 by leading section 51a than base portion 51b more by chassis 52 outside in the way of obliquely
Configuration.
The 16th viewpoint of the present invention is the invention of any viewpoint based on the 9th to the 14th viewpoint, on semiconductor crystal wafer
Support meanss, as shown in fig. 6, supporting pin 51 by leading section 51a than base portion 51b more by chassis 52 inner side in the way of obliquely
Configuration.
Invention effect
According to the method for supporting and the support meanss of the 7th viewpoint of the semiconductor crystal wafer of the 1st viewpoint of the present invention, due to leading section shape
It is thinner than cylindrical portion as tip, with cylindrical portion and base portion not with vertical linear contact lay from supporting pin contact site to chassis side that hung down from
Mode obliquely configures supporting pin, even if so when 1300 DEG C of high temperature is heat-treated to semiconductor crystal wafer, also reduce from
Heated wafer and becomes below supporting pin contact site not cover the light of infrared lamp to the heat transfer of supporting pin
Part.Specifically, tilt supporting pin, so that because the light direct irradiation of infrared lamp is in the leading section of supporting pin, so
The temperature of leading section rises further improve.The area of the shade of the leading section produced in other wafer lower surface by the light becomes
It is minimum.Thus, the temperature reduction of wafer becomes extremely low in supporting pin contact site, can reliably prevent the generation of slip dislocation.
, only will support according to the method for supporting and the support meanss of the 8th viewpoint of the semiconductor crystal wafer of the 2nd viewpoint of the present invention
The base portion of pin is inserted in the recess of the upper surface formation on chassis and is fixed on chassis, therefore, it is possible to which supporting pin is easily fixed on
Chassis, and supporting pin can be firmly secured at chassis.
According to the method for supporting and the support meanss of the 11st viewpoint of the semiconductor crystal wafer of the 3rd viewpoint of the present invention, by inciting somebody to action
The base portion insertion recess of supporting pin is simultaneously welded, and supporting pin more stably can be fixed on into chassis.
According to the method for supporting and the support meanss of the 10th viewpoint of the semiconductor crystal wafer of the 4th viewpoint of the present invention, pin support
By not with the upper surface on chassis is configured and is fixed in the way of the vertical linear contact lay that chassis side is hung down from supporting pin contact site, profit
The base portion or base portion and cylindrical portion of supporting pin are kept with the pin support, therefore, it is possible to which supporting pin is further firmly secured at
Chassis, and the light of the infrared lamp towards the supporting pin contact site of wafer lower surface will not be by pin support shading.
According to the method for supporting and the support meanss of the 12nd viewpoint of the semiconductor crystal wafer of the 5th viewpoint of the present invention, pin support
With configuring and being fixed in the lower surface on chassis in the way of the vertical linear contact lay that chassis side is hung down from supporting pin contact site, not make
The base portion or base portion of supporting pin and the through hole on cylindrical portion insertion chassis and kept using the pin support, therefore, it is possible to will branch
Support pin is further firmly secured at chassis.In addition with the support side of the 3rd viewpoint of the affixed pin support in upper surface on chassis
Method compares, and will not can further be reduced due to pin branch by pin support shading towards the light of the infrared lamp of wafer lower surface
The influence of frame and the shade in the wafer lower surface of infrared ray light that produces.
According to the method for supporting and the support meanss of the 14th viewpoint of the semiconductor crystal wafer of the 6th viewpoint of the present invention, it will support
The material of pin is set to quartz, so that thermal conductivity factor step-down, can suppress the hot-fluid from wafer following table towards supporting pin.In addition the bottom of by
The material of disk is set to quartz, so as to will not block light and can suppress the temperature reduction of supporting part.Further by supporting pin
Material is set to SiC, thus the supporting pin as dimensionally stable at high temperature and with intensity, leading section 51a dimensionally stable,
It is set to also prevent it damaged in the case of the shape of acute angle.
According to the method for supporting and the support meanss of the 15th viewpoint of the semiconductor crystal wafer of the 7th viewpoint of the present invention, if will
Supporting pin by its leading section than base portion more by the outside on chassis in the way of obliquely configure, then in order to make up the outer of semiconductor crystal wafer
Zhou Wendu reduction and make the screening to the light from periphery incline direction of pin when improving the output of the infrared lamp of outer circumferential side
Minimum is covered, so as to make the uniformity of temperature profile in wafer face.
According to the method for supporting and the support meanss of the 16th viewpoint of the semiconductor crystal wafer of the 8th viewpoint of the present invention, if will
Supporting pin is obliquely configured in the way of the inner side on chassis is more leaned in its leading section than base portion, then because being produced with the rotation on chassis
Raw centrifugal force, supporting pin becomes to be difficult to extract from chassis.
Brief description of the drawings
[Fig. 1] is top view and its support of the support meanss of the semiconductor crystal wafer of the 1st embodiment according to the present invention
The front view of device.
[Fig. 2] is the main of the support meanss of the state of the support semiconductor crystal wafer of the 1st embodiment according to the present invention
Partial section view.
[Fig. 3] is the main of the support meanss of the state of the support semiconductor crystal wafer of the 2nd embodiment according to the present invention
Partial section view.
[Fig. 4] is the main of the support meanss of the state of the support semiconductor crystal wafer of the 3rd embodiment according to the present invention
Partial section view.
[Fig. 5] is the main of the support meanss of the state of the support semiconductor crystal wafer of the 4th embodiment according to the present invention
Partial section view.
[Fig. 6] is the top view of other support meanss of the present invention and the front view of its support means.
[Fig. 7] is the major part side view of the support meanss of the state of the support semiconductor crystal wafer of conventional example.
Embodiment
Then, the mode for implementing the present invention is illustrated referring to the drawings.
The embodiment ＞ of ＜ the 1st
As shown in Figures 1 and 2, as present embodiment support object, using Silicon Wafer as the semiconductor crystal wafer of representative（With
Under, it is only called wafer）W, is arranged on RTA devices（Rapid temperature rise and drop annealing device）The support meanss of interior semiconductor crystal wafer
50 flatly support, and utilize ultrared lamp（It is not shown）It is heat-treated.RTA devices have the chamber being made up of quartz（Do not scheme
Show）.On infrared lamp, possess multiple infrared lamps, chamber is surrounded above and below and makes ultrared direction of illumination towards chamber
Configure to room.In addition, the power of infrared lamp can be each controlled.
In the embodiment, support meanss 50 have 3 supporting pins 51 and for fix the supporting pin 51 by quartzy structure
Into discoideus chassis 52.Chassis 52 is configured in the chamber of RTA devices can be with rotary shaft 53（Fig. 1）Centered on water
Level state is rotated.3 supporting pins 51 are integrally formed with the lower surface W with wafer W respectivelyBThe contact site Y of contact
Leading section 51a, be fixed on the base portion 51b on chassis 52 and the cylindrical portion 51c untill the leading section 51a to base portion 51b.
The preferred quartz of the material of supporting pin 51 or SiC.It is low by the way that supporting pin 51 is set into the thermal conductivity factor as quartz
Material, the hot-fluid from wafer following table towards supporting pin can be suppressed.It is set to additionally by by supporting pin 51 as SiC
Dimensionally stable and the material with intensity, leading section 51a dimensionally stable, in the case where being set to the shape of acute angle under high temperature
It can be prevented damaged.The material on chassis 52 does not preferably block the suprasil of light.
On supporting pin 51, such as handled the front end such as pencil cut out to the upper end of columned barred body and
Make coniform leading section 51a.Its cylindrical portion 51c and base portion 51b are preferably cylindric.That is, leading section 51a is formed as tip
Thinner than cylindrical portion 51c is coniform.Leading section 51a contact site Y is in point-like or dome shape.In addition in this embodiment, no
Only cylindrical portion 51c and base portion 51b and including the 51a of leading section all with not with from contact site Y-direction chassis side hang down hang down
Straight line X contact mode, i.e. by contact site Y lower section in the absence of supporting pin 21 leading section, cylindrical portion and base portion in the way of,
Supporting pin 51 is configured with being inclined by.In addition, although not shown but leading section 51a can also be formed as truncated cone shape.In leading section 51a
The contact site Y edges as wire same with the corner 21d shown in Fig. 7, in this case, become in the case of for truncated cone shape
Cylindrical portion and base portion only in addition to leading section are not contacted with the vertical line X hung down from contact site Y-direction chassis side.
As shown in Fig. 2 the upper surface 52a on chassis 52 forms three recess 52b, the base portion 51b of supporting pin 51 is inserted into
Recess 52b and be fixed on chassis 52.Recess 52b internal diameter is more slightly larger than the base portion 51b of supporting pin 51 external diameter, will be to recess
52b insertions base portion 51b supporting pin 51 is without being loosely fixed.Three recesses 52 are formed as supporting in fixed base 51b
Pin 51 turns into for from wafer rear WBThe states toppled over for tilt angle alpha of vertical line X its bearing pin 51d.The tilt angle alpha
Unified in 3 supporting pins 51.
If setting the coniform leading section 51a angulations of the supporting pin 51 as β, in this embodiment, following relation
Formula（1）Set up.
The ＜ α ＜ of β/2（90- β/2） （1）
Tilt angle alpha is preferably in less than more than 5 degree 70 degree of scope.When less than lower limit because support bearing pin portion caused by lamp
Light masking wafer support portion temperature reduction, it becomes difficult to obtain sliding minimizing effect, the length of supporting pin if more than higher limit
It is elongated, become easily sell lose.Other leading section 51a angulations β is preferably in less than more than 5 degree 40 degree of model
Enclose.Become easily to lose in pin leading section when less than lower limit, because supporting pin leading section causes if higher limit is exceeded
The reduction of eclipse wafer support portion temperature, it becomes difficult to obtain sliding minimizing effect.
Three recess 52b are further related to, are configured at the chassis 52 from upper surface with 120 degree of intervals.Thus, in order to
Circular wafer W is supported, 3 supporting pins 51 are also configured under top view with 120 degree of intervals.That is, wafer W in chamber, with
The state separated from the internal face of chamber, as shown in figure 1, turning into from its lower surface WBSide is by 3 points of supports.
In method for supporting preferably, the base portion 51b of supporting pin 51 is only inserted into the upper table to be formed on chassis 52
Face 52a recess 52b and be fixed on chassis 52, therefore supporting pin 51 easily can be fixed on chassis 52, and will can prop up
Support pin 51 is firmly secured at chassis 52.Wafer W is flatly supported using 3 supporting pins 51 for being fixed on chassis 52 by 3 points.Separately
Outer incline supporting pin 51, so that leading section 51a of the light direct irradiation of infrared lamp in supporting pin 51, therefore leading section 51a
Temperature rise it is further improve, and wafer lower surface WBThe middle area because of the leading section 51a of light generation shade becomes
It is minimum.Specifically, supporting pin 51 becomes the contact site Y and wafer rear W for being able to point-likeBContact, therefore, it is possible to make supporting pin 51
Contact area with wafer W is minimum.Thereby, it is possible to reduce from wafer rear WBThe heat escaped to supporting pin 51.In addition in branch
Leading section 51a, cylindrical portion 51c, the base portion 51b of supporting pin 51 is not present in the lower section for supportting pin joint contact portion Y, therefore passes through chassis 52
The light of infrared lamp will not be interdicted by leading section 51a, cylindrical portion 51c, base portion 51b and reach supporting pin contact site Y.Due to eliminating
Shading phenomenon caused by supporting pin 51 in such phenomenon of Heat and contact site Y from contact site Y-direction supporting pin, so wafer
Temperature difference in face is also reduced than patent document 1, can be reliably suppressed because of the generation for the slippage defect that thermal stress is produced.
The embodiment ＞ of ＜ the 2nd
The 2nd embodiment of the present invention is shown in Fig. 3.In figure 3, for joining with Fig. 2 identicals component parts mark identical
Sighting target number, the description thereof will be omitted.In the support meanss 50 shown in Fig. 3, the upper surface 52a on chassis 52 welds three pin supports
54, it is affixed with 120 degree of intervals under top view.It is formed with the pin support 54 equivalent to described in the 1st embodiment
Recess 52b recess 54a.Recess 54a internal diameter is same with recess 52b, than the base portion 51b and cylindrical portion 51c of supporting pin 51
Each external diameter it is slightly larger, base portion 51b and cylindrical portion 51c supporting pin 51 will be inserted to recess 54a without loosely fixing.Three recesses
54a, which is formed as in fixed base 51b and cylindrical portion 51c supporting pin 51, to be turned into for from wafer rear WBVertical line X its pin
The state that axle 51d topples over for tilt angle alpha.Furthermore, while not shown, but can also be to reduce the height of pin support 54
The base portion 51b of supporting pin 51 pin support is only inserted in recess 54a.Other of 2nd embodiment are constituted and the 1st embodiment phase
Together.
In the method for supporting of the 2nd embodiment, by pin support 54 with not with being hung down from the side of supporting pin contact site Y-direction chassis 52
Under vertical line X contact mode configure and be fixed in the upper surface 52a on chassis 52, utilize the pin support 54 keep supporting pin 51
Base portion 51b and cylindrical portion 51c or base portion 51b, therefore, it is possible to which supporting pin 51 is further firmly secured at into chassis 52, and
And towards wafer lower surface WBThe supporting pin contact site Y light of infrared lamp will not be by the shading of pin support 54.Due to eliminating
Shading phenomenon caused by supporting pin 51 in such phenomenon of Heat and contact site Y from contact site Y-direction supporting pin, so wafer face
Interior temperature difference is also reduced than patent document 1, can be reliably suppressed because of the generation for the slippage defect that thermal stress is produced.
The embodiment ＞ of ＜ the 3rd
The 3rd embodiment of the present invention is shown in Fig. 4.In Fig. 4, for joining with Fig. 3 identicals component parts mark identical
Sighting target number, the description thereof will be omitted.The feature of support meanss 50 shown in Fig. 4 is configured to：Make the coniform leading section of supporting pin 51
51a is thinner than the leading section of the 1st and the 2nd embodiment, make its angulation β than the 1st and the 2nd embodiment leading section institute into
Angle it is small.Other compositions of 3rd embodiment are identical with the 2nd embodiment.
In the method for supporting of the 3rd embodiment, make leading sections of the leading section 51a than the 2nd embodiment of supporting pin 51
Carefully, led therefore, it is possible to further eliminate the supporting pin 51 from the phenomenon of Heat and contact site Y of above-mentioned contact site Y-direction supporting pin
The shading phenomenon of cause.
The embodiment ＞ of ＜ the 4th
The 4th embodiment of the present invention is shown in Fig. 5.In Figure 5, for joining with Fig. 3 identicals component parts mark identical
Sighting target number, the description thereof will be omitted.The feature of support meanss 50 shown in Fig. 5 is configured to：Being formed on chassis 52 makes the base of supporting pin 51
Portion 51b and cylindrical portion 51c are capable of the through hole 52c of insertion, and holding insertion is connected with using the lower surface 52d for being welded on chassis 52
Through hole 52c base portion 51b and cylindrical portion 51c pin support 55, the pin support 55 be configured to not with from supporting pin contact site Y
The vertical line X contacts hung down to the side of chassis 52.Furthermore, while not shown, but it is also possible to be make pin support 55 height reduce and
Recess 55a only inserts the base portion 51b of supporting pin 51 pin support.Other of 4th embodiment are constituted and the 3rd embodiment phase
Together.
In the method for supporting of the 4th embodiment, by pin support 55 with not with being hung down from the side of supporting pin contact site Y-direction chassis 52
Under vertical line X contact mode configure and be fixed in the lower surface 52d on chassis 52, make the base portion 51b and tubular of supporting pin 51
The portion 51c or through hole 52c on base portion 51b insertions chassis 52 and kept using the pin support 55, therefore, it is possible to by supporting pin
51 are further firmly secured at chassis 52.In addition with the 3rd embodiment party of the affixed pin supports 54 of upper surface 52a on chassis 52
The method for supporting of formula compares, towards wafer lower surface WBThe light of infrared lamp will not be by the shading of pin support 54, due to pin branch
The wafer lower surface W of frame 54 and the infrared ray light of generationBIn the influence of shade become smaller.Thus, with the 3rd embodiment
Method for supporting compare, additionally it is possible to more reduce supporting pin contact site in wafer temperature reduction.
In addition, in the 1st embodiment, more being leaned on than base portion 51b with the leading section 51a of supporting pin 51 as shown in figure 1, showing
The mode in the outside on chassis 52 obliquely configures the example of supporting pin 51, but the present invention can also be as shown in fig. 6, with supporting pin
Modes of the 51 leading section 51a than base portion 51b more by the inner side on chassis 52 obliquely configures supporting pin 51.If as shown in Figure 1
Supporting pin 51 is configured in the way of leading section 51a is turned into the outside on chassis 52, then in order to make up the periphery temperature of semiconductor crystal wafer
The reduction of degree and make the masking to the light from periphery incline direction of pin most when improving the output of the infrared lamp of outer circumferential side
It is small, so as to make the uniformity of temperature profile in wafer face.If in addition as shown in fig. 6, so that leading section 51a turns into chassis 52
The mode in outside configure supporting pin 51, then because the centrifugal force produced with the rotation on chassis 52, supporting pin 51 becomes difficult
To be extracted from the recess 52b on chassis 52.
Embodiment
Then examples and comparative examples of the present invention are illustrated.
The ＞ of ＜ embodiments 1
Using the RTA devices with the support meanss shown in Fig. 3, heat is carried out to 3 pieces of Silicon Wafers of diameter 300mm, 775 μm of thickness
Processing.Supporting pin 51 has coniform leading section 51a and cylindrical shape cylindrical portion 51c and base portion 51b, whole using supporting pin
The length of body is formed as 19.5mm, leading section 51a length and is formed as 9mm, cylindrical portion 51c and base portion 51b diameter being formed as
1.5mm part.The material of supporting pin 51 is set to quartz.The tilt angle alpha of supporting pin 51 is 30 degree, the leading section of supporting pin 51
51a angulations β is set to 9 degree.Pin support 54 uses height 5mm part.
The ＞ of ＜ embodiments 2
Using the RTA devices with the support meanss shown in Fig. 4, to the diameter cut out from silicon single crystal block same as Example 1
300mm, 3 pieces of Silicon Wafers of 775 μm of thickness are heat-treated.Supporting pin 51 has coniform leading section 51a, cylindrical shape
Cylindrical portion 51c and base portion 51b, using the overall length of supporting pin is formed as 24mm, leading section 51a length is formed as 5mm, cylinder
Shape portion 51c and base portion 51b diameter are formed as 1mm part.The material of supporting pin 51 is set to SiC.The inclination angle of supporting pin 51
It is 45 degree to spend α, and the leading section 51a angulations β of supporting pin 51 is set to 6 degree.Pin support 54 uses height 4mm part.
The ＞ of ＜ comparative examples 1
Using the RTA devices with the support meanss shown in Fig. 7, to the diameter cut out from silicon single crystal block same as Example 1
300mm, 3 pieces of Silicon Wafers of 775 μm of thickness are heat-treated.Supporting pin 21 has coniform leading section 21c and cylindrical shape
Main part（Equivalent to cylindrical portion and base portion）21e, is formed as 17mm, leading section 21c length using the overall length of supporting pin
Degree is formed as 6.5mm, main part 21e diameter and is formed as 1.5mm part.The material of supporting pin 21 is quartz.Supporting pin 21
Tilt angle alpha be 3 degree, the leading section 21c angulations β of supporting pin 21 is 9 degree.Pin support 12 uses height 8mm portion
Part.
＜ comparative experiments ＞
Using the RTA devices of the support meanss with embodiment 1, embodiment 2 and comparative example 1, its highest heat treatment temperature is each
From being set as 1200 DEG C, 1250 DEG C, 1300 DEG C, with 50 DEG C/sec of programming rate, 10 seconds processing times, 50 DEG C/sec of cooling rate,
3 pieces of Silicon Wafers are heat-treated respectively.For the Silicon Wafer after heat treatment, with the foreign body detecting device of laser light scattering mode
（KLA-Tencor societies SP1）Determine the sliding that crystal column surface is stretched over from wafer rear.It the results are shown in table 1.
[table 1]
＜ evaluates ＞
As shown in Table 1, in the RTA devices of the support meanss with comparative example 1, maximum heat treatment temperature is not sent out at 1200 DEG C
Raw slip dislocation, but there occurs slip dislocation in 1250 DEG C, 1300 DEG C.In contrast, in the support with embodiment 1 and 2
In the RTA devices of device, maximum heat treatment temperature is much less at 1200 DEG C, even if also not slided in 1250 DEG C, 1300 DEG C
Displacement is wrong.Result more than, judges the method for supporting and support meanss according to the present invention, even if in 1300 DEG C of high temperature
Also the generation of slip dislocation can be reliably prevented in heat treatment.
Industrial applicability
The present invention can widely be used in the manufacture of semiconductor crystal wafer and semiconductor devices.
Label declaration
W semiconductor crystal wafers；X vertical lines；Y supporting pin contact sites；The support meanss of 50 semiconductor crystal wafers；51 supports
Pin；The leading section of 51a supporting pins；The base portion of 51b supporting pins；The cylindrical portion of 51c supporting pins；The pin of 51d supporting pins
Axle；52 chassis；The upper surface on 52a chassis；The recess on 52b chassis；The through hole on 52c chassis；Under 52d chassis
Surface；53 rotary shafts；54 pin supports；The recess of 54a pin supports；55 pin supports；The recess of 55a pin supports.
Claims (16)
1. a kind of method for supporting of semiconductor crystal wafer, for coming hot place by using the rapid temperature rise and drop annealing device of heating lamp
The semiconductor crystal wafer of reason, using be fixed at least 3 supporting pins on chassis the chassis top the wafer following table
Face is flatly supported, it is characterised in that
The supporting pin is integrally formed with：The leading section of the contact site contacted with the lower surface with the semiconductor crystal wafer,
The base portion on the chassis and the cylindrical portion from the leading section untill the base portion are fixed on,
The leading section is formed as tip than the cylindrical portion carefully,
By the cylindrical portion and the base portion not in the way of the vertical linear contact lay hung down from the contact site to the chassis side
Obliquely configure the supporting pin.
2. method for supporting as claimed in claim 1, wherein, recess is formed with the upper surface on the chassis, the base portion is inserted
Enter the recess and be fixed on the chassis.
3. method for supporting as claimed in claim 2, wherein, the base portion is inserted the recess and is directly anchored to using welding
The chassis.
4. method for supporting as claimed in claim 1, wherein, the holding base portion or institute are connected with the upper surface on the chassis
State the pin support of base portion and the cylindrical portion, and the pin support with not with hanging down for being hung down from the contact site to the chassis side
The mode of straight contact is configured.
5. method for supporting as claimed in claim 1, wherein, being formed with the chassis enables the base portion or the base portion
The through hole of insertion, the chassis lower surface be connected with keep insertion described in through hole the base portion or the base portion and
The pin support of the cylindrical portion, and the pin support is with vertical linear contact lay not with being hung down from the contact site to the chassis side
Mode configure.
6. the method for supporting as described in any one of claim 1 to 5, wherein, the material of the supporting pin is quartz or SiC, institute
It is quartz to state the material on chassis.
7. the method for supporting as described in any one of claim 1 to 6, wherein, the supporting pin is with the leading section than the base
Mode of the portion more by the outside on the chassis is obliquely configured.
8. the method for supporting as described in any one of claim 1 to 6, wherein, the supporting pin is with the leading section than the base
Mode of the portion more by the inner side on the chassis is obliquely configured.
9. a kind of support meanss of semiconductor crystal wafer, flatly support the rapid temperature rise and drop annealing device by using heating lamp
The semiconductor crystal wafer being heat-treated, it is characterised in that the bottom with least 3 supporting pins and for fixing the supporting pin
Disk, the supporting pin is integrally formed with：It is the leading section of the contact site contacted with the lower surface with the semiconductor crystal wafer, solid
The base portion on the chassis and the cylindrical portion from the leading section untill the base portion are scheduled on, the leading section is formed as point
End is thinner than the cylindrical portion, not vertical with what is hung down from the contact site to the chassis side with the cylindrical portion and the base portion
The mode of linear contact lay obliquely configures the supporting pin.
10. support meanss as claimed in claim 9, wherein, recess is formed with the upper surface on the chassis, the base portion is inserted
Enter the recess and be fixed on the chassis.
11. support meanss as claimed in claim 10, wherein, the base portion inserts the recess and directly fixed using welding
On the chassis.
12. support meanss as claimed in claim 9, wherein, be connected with the upper surface on the chassis holding base portion or
The pin support of the base portion and the cylindrical portion, and the pin support is not with hanging down from the contact site to the chassis side
The mode of vertical linear contact lay is configured.
13. support meanss as claimed in claim 9, wherein, being formed with the chassis enables the base portion or the base portion
The through hole of enough insertions, the lower surface on the chassis is connected with the base portion or the base portion for keeping through hole described in insertion
With the pin support of the cylindrical portion, and the pin support with vertical line from the contact site to the chassis side that hung down from not connect
Tactile mode is configured.
14. the support meanss as described in any one of claim 9 to 13, wherein, the material of the supporting pin is quartzy or SiC,
The material on the chassis is quartz.
15. the support meanss as described in any one of claim 9 to 14, wherein, the supporting pin is with the leading section than described
Mode of the base portion more by the outside on the chassis is obliquely configured.
16. the support meanss as described in any one of claim 9 to 14, wherein, the supporting pin is with the leading section than described
Mode of the base portion more by the inner side on the chassis is obliquely configured.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-229393 | 2014-11-12 | ||
| JP2014229393A JP6369297B2 (en) | 2014-11-12 | 2014-11-12 | Semiconductor wafer support method and support apparatus therefor |
| PCT/JP2015/073974 WO2016075980A1 (en) | 2014-11-12 | 2015-08-26 | Method for supporting semiconductor wafer, and device for supporting same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107112215A true CN107112215A (en) | 2017-08-29 |
| CN107112215B CN107112215B (en) | 2020-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580060866.4A Active CN107112215B (en) | 2014-11-12 | 2015-08-26 | Method and device for supporting semiconductor wafer |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6369297B2 (en) |
| KR (1) | KR101934872B1 (en) |
| CN (1) | CN107112215B (en) |
| DE (1) | DE112015005137B4 (en) |
| WO (1) | WO2016075980A1 (en) |
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| CN107749407A (en) * | 2017-09-22 | 2018-03-02 | 沈阳拓荆科技有限公司 | Silicon wafer bearing disk and its supporting construction |
| CN109148353A (en) * | 2018-08-15 | 2019-01-04 | 深圳市华星光电技术有限公司 | A kind of substrate Support tray |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE112015005137B4 (en) | 2023-09-07 |
| JP6369297B2 (en) | 2018-08-08 |
| WO2016075980A1 (en) | 2016-05-19 |
| CN107112215B (en) | 2020-04-10 |
| DE112015005137T5 (en) | 2017-08-03 |
| KR101934872B1 (en) | 2019-03-18 |
| KR20170072183A (en) | 2017-06-26 |
| JP2016096166A (en) | 2016-05-26 |
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