CN107109090B - 油墨组合物和使用该油墨组合物制造的光电转换元件 - Google Patents

油墨组合物和使用该油墨组合物制造的光电转换元件 Download PDF

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CN107109090B
CN107109090B CN201580061151.0A CN201580061151A CN107109090B CN 107109090 B CN107109090 B CN 107109090B CN 201580061151 A CN201580061151 A CN 201580061151A CN 107109090 B CN107109090 B CN 107109090B
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CN107109090A (zh
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申晓晓
中谷智也
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Sumitomo Chemical Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/033—Printing inks characterised by features other than the chemical nature of the binder characterised by the solvent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/10—Printing inks based on artificial resins
    • C09D11/106—Printing inks based on artificial resins containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
CN201580061151.0A 2014-11-13 2015-11-06 油墨组合物和使用该油墨组合物制造的光电转换元件 Active CN107109090B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014230429 2014-11-13
JP2014-230429 2014-11-13
PCT/JP2015/081270 WO2016076213A1 (ja) 2014-11-13 2015-11-06 インク組成物およびそれを用いて製造した光電変換素子

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US (1) US20170237012A1 (enExample)
EP (2) EP3219765B1 (enExample)
JP (2) JP6159034B2 (enExample)
KR (2) KR101815432B1 (enExample)
CN (1) CN107109090B (enExample)
WO (1) WO2016076213A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180095028A (ko) * 2015-12-16 2018-08-24 메르크 파텐트 게엠베하 둘 이상의 상이한 용매의 혼합물을 함유하는 제형
GB2551585A (en) * 2016-06-24 2017-12-27 Sumitomo Chemical Co Solvent blends for improved jetting and ink stability for inkjet printing of photoactive layers
GB2554404A (en) * 2016-09-26 2018-04-04 Sumitomo Chemical Co Solvent systems for preparation of photosensitive organic electronic devices
KR101930284B1 (ko) * 2016-11-01 2018-12-19 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 및 이를 사용하여 제조된 태양전지
WO2018095381A1 (zh) 2016-11-23 2018-05-31 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途
GB2560934A (en) * 2017-03-28 2018-10-03 Sumitomo Chemical Co Solvent systems for the preparation of photosensitive organic electronic devices
CN111263982A (zh) * 2017-10-23 2020-06-09 住友化学株式会社 油墨、油墨的固化膜以及光电转换元件
JP6411686B1 (ja) * 2018-02-09 2018-10-24 住友化学株式会社 高分子化合物の製造方法
CN112771684B (zh) 2018-09-19 2024-07-12 株式会社大赛璐 有机半导体器件制造用油墨组合物
JP7145058B2 (ja) * 2018-12-07 2022-09-30 花王株式会社 塗膜の形成方法
WO2020193612A2 (en) * 2019-03-28 2020-10-01 Raynergy Tek Inc. Organic semiconductor formulation
FR3097686B1 (fr) * 2019-06-24 2022-10-28 Isorg Formulation comprenant un matériau semiconducteur organique de type p et un matériau semiconducteur de type n
JP2021136402A (ja) * 2020-02-28 2021-09-13 三菱ケミカル株式会社 光電変換層作成用インク、光電変換素子の製造方法、光電変換素子、及び光センサー
JP7284128B2 (ja) * 2020-07-17 2023-05-30 住友化学株式会社 光電変換素子及びその製造方法
WO2022071127A1 (ja) * 2020-10-02 2022-04-07 パナソニックＩｐマネジメント株式会社 電極触媒インク、電極触媒、水電解セル、及び水電解装置
JP6932279B1 (ja) * 2021-03-24 2021-09-08 住友化学株式会社 インク組成物の製造方法
TWI849311B (zh) * 2021-04-29 2024-07-21 天光材料科技股份有限公司 有機半導體裝置
JP2023107154A (ja) * 2022-01-21 2023-08-02 住友化学株式会社 インク組成物及び当該インク組成物を用いた光電変換素子
JP7250982B1 (ja) * 2022-06-08 2023-04-03 住友化学株式会社 光検出素子の活性層形成用インク組成物、膜、及び光検出素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012074909A1 (en) * 2010-11-29 2012-06-07 Arizona Board Of Regents Acting For And On Behalf Of Arizona State University Methods for fabricating bulk heterojunctions using solution processing techniques
CN103748703A (zh) * 2011-08-26 2014-04-23 默克专利股份有限公司 有机半导体制剂

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100939468B1 (ko) * 2001-03-10 2010-01-29 메르크 파텐트 게엠베하 유기 반도체 용액 및 분산액
CN100516108C (zh) * 2004-02-26 2009-07-22 住友化学株式会社 高分子化合物以及使用该高分子化合物的高分子发光元件
US7329709B2 (en) * 2004-06-02 2008-02-12 Konarka Technologies, Inc. Photoactive materials and related compounds, devices, and methods
JP5054305B2 (ja) * 2005-12-22 2012-10-24 パナソニック株式会社 有機太陽電池の製造方法
JP2008053252A (ja) * 2006-08-22 2008-03-06 Matsushita Electric Ind Co Ltd 有機光電変換素子アレイおよびこれを用いたイメージセンサ
JP2010528119A (ja) * 2007-05-02 2010-08-19 プレックストロニクス インコーポレーティッド 共役ポリマーのための溶媒システム
WO2009052429A1 (en) 2007-10-19 2009-04-23 Jarrell John D Novel compositions and related methods, coatings, and articles
EP2246382A4 (en) 2008-02-18 2012-05-02 Sumitomo Chemical Co COMPOSITION AND ORGANIC AND PHOTOELECTRIC CONVERTERS USED THEREOF
KR20100138930A (ko) * 2008-03-25 2010-12-31 스미또모 가가꾸 가부시키가이샤 조성물 및 그것을 이용한 광전 변환 소자
JP2012500500A (ja) * 2008-08-20 2012-01-05 プレックストロニクス インコーポレーティッド 有機太陽電池の製造のための改善された溶媒システム
EP2463929A4 (en) * 2009-08-04 2013-10-02 Mitsubishi Chem Corp PHOTOELECTRIC CONVERTER ELEMENT AND SOLAR CELL THEREWITH
KR20120100899A (ko) 2009-10-29 2012-09-12 스미또모 가가꾸 가부시키가이샤 고분자 화합물
CN102668152A (zh) * 2009-12-23 2012-09-12 默克专利有限公司 包括聚合粘结剂的组合物
US9368761B2 (en) * 2009-12-23 2016-06-14 Merck Patent Gmbh Compositions comprising organic semiconducting compounds
KR102045196B1 (ko) * 2010-04-12 2019-11-15 메르크 파텐트 게엠베하 개선된 성능을 갖는 조성물
KR101896723B1 (ko) * 2010-04-12 2018-09-07 메르크 파텐트 게엠베하 유기 전자 소자 제조용 조성물 및 방법
CN102834449B (zh) * 2010-04-16 2014-10-08 旭硝子株式会社 含氟共聚物组合物及其制造方法
EP2576724B1 (en) 2010-05-27 2019-04-24 Merck Patent GmbH Method for preparation of organic electronic devices
WO2012111784A1 (ja) * 2011-02-14 2012-08-23 住友化学株式会社 有機光電変換素子の製造方法
TW201307427A (zh) * 2011-02-14 2013-02-16 Sumitomo Chemical Co 有機光電變換元件的製造方法
WO2012147564A1 (ja) * 2011-04-25 2012-11-01 住友化学株式会社 高分子化合物及びそれを用いた電子素子
WO2013021971A1 (ja) * 2011-08-09 2013-02-14 コニカミノルタホールディングス株式会社 有機光電変換素子、およびそれを用いた有機太陽電池
CN103857725B (zh) 2011-10-07 2016-03-02 住友化学株式会社 高分子化合物及电子元件
US8598299B2 (en) * 2011-12-06 2013-12-03 Xerox Corporation Semiconductor composition
JP5915969B2 (ja) * 2012-03-09 2016-05-11 三菱化学株式会社 光電変換素子及び太陽電池モジュール
JP6018488B2 (ja) 2012-07-12 2016-11-02 大日本除蟲菊株式会社 薬剤揮散体、及びこれを用いた飛翔害虫の防虫方法
TWI623564B (zh) * 2012-12-28 2018-05-11 新加坡科技研究局 Ｐ型半導體聚合物及相關方法
JP2014189666A (ja) * 2013-03-27 2014-10-06 Mitsubishi Chemicals Corp 半導体層形成用組成物及びそれを用いた太陽電池素子
WO2015018480A1 (en) * 2013-08-07 2015-02-12 Merck Patent Gmbh Formulation for the preparation of organic electronic (oe) devices comprising a polymeric binder
FR3022692B1 (fr) * 2014-06-24 2016-07-15 Armor Procede de realisation d'un film organique semi-conducteur

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012074909A1 (en) * 2010-11-29 2012-06-07 Arizona Board Of Regents Acting For And On Behalf Of Arizona State University Methods for fabricating bulk heterojunctions using solution processing techniques
CN103748703A (zh) * 2011-08-26 2014-04-23 默克专利股份有限公司 有机半导体制剂

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US20170237012A1 (en) 2017-08-17
WO2016076213A1 (ja) 2016-05-19
EP3219765A4 (en) 2017-11-08
EP3219765B1 (en) 2019-01-30
JPWO2016076213A1 (ja) 2017-06-29
JP6159034B2 (ja) 2017-07-05
KR20170070252A (ko) 2017-06-21
KR101815432B1 (ko) 2018-01-04
EP3496174B1 (en) 2024-06-12
CN107109090A (zh) 2017-08-29
EP3219765A1 (en) 2017-09-20
KR102341244B1 (ko) 2021-12-20
KR20180004301A (ko) 2018-01-10
JP6718412B2 (ja) 2020-07-08
JP2017197765A (ja) 2017-11-02
EP3496174A1 (en) 2019-06-12

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