CN107078093A - 轴端部安装结构 - Google Patents
轴端部安装结构 Download PDFInfo
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Abstract
本发明的轴端部安装结构是用于将与载置晶片的陶瓷板(12)一体化了的中空陶瓷轴(20)的端部气密地安装于在腔室(100)的底板(102)上设置的贯通孔(104)周边的结构。在中空陶瓷轴(20)的端面,介由金属层(28)气密地接合有金属材料制或金属‑陶瓷复合材料制的环构件(26)。螺栓(32)在环构件(26)介由金属密封件(30)载置于贯通孔(104)周边的状态下贯通底板(102)和金属密封件(30),将环构件(26)拉向底板(102)并进行紧固。
Description
技术领域
本发明涉及轴端部安装结构。
背景技术
已知有将载置晶片的陶瓷板与中空陶瓷轴一体化而成的半导体制造装置用构件(例如专利文献1)。
现有技术文献
专利文献
专利文献1:日本特开2003-272805号公报
发明内容
发明想要解决的课题
另外,作为将这样的半导体制造装置用构件的中空陶瓷轴的端部气密地安装于在腔室的底板上设置的贯通孔周边的轴端部安装结构,已知有图4中所示的轴端部安装结构。在该安装结构中,在设置于腔室100的底板102上的贯通孔104的周边处,介由环状的金属密封件106而载置有中空陶瓷轴108的凸缘110。中空陶瓷轴108与陶瓷板112一体化而构成陶瓷加热器114。由两个截面为倒L字型的对开环(半割リング)合在一起而形成环状的夹具116,从上往下按压中空陶瓷轴108的凸缘110。螺栓118从夹具116的上表面贯通夹具116并与腔室100的底板102螺纹结合。通过这样做,使得腔室100的内部空间S1与中空陶瓷轴108的内部空间S2成为气密分离的状态。因此,可以将腔室100的内部空间S1设为真空气氛,将该内部空间S1与中空陶瓷轴108的内部空间S2隔绝(縁切り)。
但是,在图4的安装结构中,在夹具116与腔室100的底板102之间夹持有中空陶瓷轴108的凸缘110,因此若将螺栓118拧得过紧,则中空陶瓷轴108有可能会破裂。另一方面,存在如下的问题:若想要避免中空陶瓷轴108的破裂,则有时螺栓118的紧固变松,金属密封件106不能充分发挥作用,无法将腔室100的内部空间S1与中空陶瓷轴108的内部空间S2气密分离。
本发明鉴于上述的课题而完成,其主要目的在于,不损坏中空陶瓷轴,并且使腔室的内部空间与中空陶瓷轴的内部空间充分气密地分离。
用于解决问题的方案
本发明的轴端部安装结构是将与载置晶片的陶瓷板一体化了的中空陶瓷轴的端部气密地安装于在腔室的底板上设置的贯通孔周边的轴端部安装结构,其具备:
金属材料制或金属-陶瓷复合材料制的环构件,其介由金属层气密地接合于前述中空陶瓷轴的端面,
紧固构件,其在前述环构件介由密封层载置于在前述腔室的底板上设置的贯通孔周边的状态下贯通前述底板和前述密封层,且将前述环构件拉向前述底板并进行紧固。
在该轴端部安装结构中,中空陶瓷轴介由环构件和金属层而与腔室气密地接合。环构件介由密封层载置于在腔室的底板上设置的贯通孔周边,紧固构件贯通底板和密封层,且将环构件拉向底板并进行紧固。环构件是金属材料制或金属-陶瓷复合材料制,与陶瓷相比强度高。由此,若将紧固构件强力拧紧,则虽然环构件介由密封层而被拉向腔室底板的上表面,但不存在损坏环构件的危险,也不会紧固中空陶瓷轴。因此,即使将紧固构件强力拧紧也不存在损坏中空陶瓷轴的危险。另外,由于能够强力拧紧紧固构件,因而可以充分获得金属密封件的密封性。因此,能够使腔室的内部空间与中空陶瓷轴的内部空间充分气密地分离。
在本发明的轴端部安装结构中,前述紧固构件也可以是:从前述底板的下表面贯通前述底板和前述密封层并与前述环构件的螺栓孔螺纹结合的螺栓。
在本发明的轴端部安装结构中,前述中空陶瓷轴是AlN制,前述环构件优选为Mo制、W制或FeNiCo系合金制(例如可伐合金(注册商标)等)。如果这样设定,则环构件的热膨胀系数接近于陶瓷的热膨胀系数,因而即使反复进行了加热、冷却,也能够防止因热膨胀差异而产生环构件与中空陶瓷轴的接合破坏。
在本发明的轴端部安装结构中,前述金属层优选为Al层或Al合金层(例如Al-Si-Mg系合金层、Al-Mg系合金层等)。如果这样设定,则可以采用TCB(Thermal compressionbonding,热压接合),因而不易在金属层中形成针孔,金属层的密封性得以提高。
附图说明
图1为表示本发明的轴端部安装结构的一个例子的截面图。
图2为表示本发明的轴端部安装结构的另一例子的截面图。
图3为表示测定源自轴端部的He泄漏量的方法的说明图。
图4为表示以往的轴端部安装结构的一个例子的截面图。
具体实施方式
接着,使用图1在以下说明本发明的轴端部安装结构的一个例子。图1为表示本发明的轴端部安装结构的一个例子的截面图,具体而言是安装于腔室100内部的陶瓷加热器10的截面图。
陶瓷加热器10用来加热晶片W,其安装于半导体工艺用的腔室100的内部。该陶瓷加热器10具备:具有能够载置晶片W的晶片载置面12a的陶瓷板12、以及接合于陶瓷板12的与晶片载置面12a相反一侧的面(背面)12b上的中空陶瓷轴20。
陶瓷板12是以AlN为主要成分的圆板状的构件。在该陶瓷板12中埋设有加热电极14与RF电极16。关于加热电极14,通过将以Mo为主要成分的线圈按照一笔画的要领配线于陶瓷板12的整面而得到。在该加热电极14的一端连接有正极的加热端子棒14a,在另一端连接有负极的加热端子棒14b。RF电极16是直径比陶瓷板12稍小的圆盘状的薄层电极,由网状物形成,所述网状物通过将以Mo为主要成分的细金属线编织成网状并制成为片状。该RF电极16埋设在陶瓷板12中的加热电极14与晶片载置面12a之间。另外,在RF电极16的大致中央处连接有RF端子棒16a。
中空陶瓷轴20是设为AlN的圆筒状的构件,在上方开口的周围具有第1凸缘22,在下方开口的周围具有第2凸缘24。第1凸缘22的端面通过TCB而接合于陶瓷板12的背面12b。第2凸缘24的端面通过TCB而接合于Mo制的环构件26。TCB是指如下方法:在接合对象的两个构件之间夹入金属接合材料,加热至金属接合材料的固相线温度以下的温度,在该状态下将两个构件进行加压接合。作为金属接合材料,可举出如Al-Si-Mg系接合材料、Al-Mg系接合材料等含有Al和Mg的Al合金接合材料等。例如,在使用含有88.5质量%的Al、10质量%的Si、1.5质量%的Mg并且固相温度为约560℃、液相温度为约590℃的接合材料作为Al-Si-Mg系接合材料时,TCB如下进行:在加热至固相温度以下(例如约520~550℃)的温度的状态下,以20~140kg/mm2的压力,优选以30~60kg/mm2的压力加压3~6小时。在第2凸缘24的端面与环构件26之间,形成源自在TCB中所使用的金属接合材料的金属层28。由于金属层28由TCB形成,因而不易产生针孔并且气密性优异。另外,在第1凸缘22的端面与陶瓷板12之间也形成同样的金属层(省略图示)。在环构件26与在腔室100的底板102上设置的贯通孔104周边之间,配置有金属密封件30(密封层)。螺栓32(紧固构件)从底板102的下表面贯通底板102和金属密封件30并且与设置在环构件26的下表面的螺纹孔26a螺纹结合。关于该螺栓32,沿着环构件26的圆周方向等间隔地使用3根以上(优选为6根以上)。予以说明的是,从底板102的下表面嵌入螺栓32时,也可以使用垫圈(washer)。在中空陶瓷轴20的内部空间S2中,插通着上述的加热端子棒14a、14b和RF端子棒16a,进一步,还插通着测定陶瓷板12的温度的护套热电偶18。
接着,对本实施方式的陶瓷加热器10的使用例进行说明。在陶瓷加热器10的晶片载置面12a上载置晶片W,将腔室100的内部空间S1设为预定的气氛(例如氢气氛、氩气氛、真空气氛)。此时,内部空间S1与中空陶瓷轴20的内部空间S2隔绝。而且,对晶片W进行环构件26不遭受由腔室内气氛导致的损坏那样的工艺(例如晶片退火等)。或者,根据需要,也可以通过RF端子棒16a对RF电极16施加交流高电压,从而在由设置在腔室100内上方的未图示的水平对置电极与埋设于陶瓷加热器10的RF电极16构成的平行平板电极之间产生等离子体,并利用该等离子体。在处理晶片W时,也可以通过对RF电极16施加直流高电压从而产生静电力,由此将晶片W吸附于晶片载置面12a。另一方面,根据护套热电偶18的检测信号而求出晶片W的温度,控制施加于2根加热端子棒14a、14b之间的电压的大小、开关以使该温度成为设定温度。
在以上详述的本实施方式的轴端部安装结构中,中空陶瓷轴20介由金属层28与环构件26气密地接合。另外,环构件26介由金属密封件30而载置于在腔室100的底板102上设置的贯通孔104的周边,螺栓32从底板102的下表面贯通底板102和金属密封件30,并与环构件26螺纹结合。环构件26是Mo制即金属材料制,与陶瓷相比强度高。由此,若强力拧紧螺栓32,则环构件26介由金属密封件30而被拉向腔室100的底板102的上表面,但不会损坏环构件26,也不会紧固中空陶瓷轴20。因此,即使强力拧紧螺栓32也不存在损坏中空陶瓷轴20的危险。另外,由于能够强力拧紧螺栓32,因而可以充分获得金属密封件30的密封性。因此,能够将腔室100的内部空间S1与中空陶瓷轴20的内部空间S2充分气密地分离。
另外,环构件26是Mo制,其热膨胀系数接近于AlN陶瓷的热膨胀系数。因此,即使反复进行了加热、冷却,也能够防止因热膨胀差异而产生环构件26与中空陶瓷轴20的接合破坏。此处,将代表性的陶瓷与金属的热膨胀系数示于表1。
表1
(*)300℃的测定数据
进一步,由于金属层28是铝合金层,因而如上所述可以采用TCB。因此,金属层28中不易形成针孔,金属层28的密封性得以提高。
予以说明的是,自不用言,本发明不受上述实施方式的任何限定,只要属于本发明的技术范围就可以以各种实施方式实施。
例如,在上述实施方式中使用了Mo作为环构件26的材料,但也可以使用W、FeNiCo系合金(例如可伐合金(注册商标))。如表1所示,这些金属的热膨胀系数是本实施方式中所用的AlN陶瓷的热膨胀系数的±20%以内,因此即使反复进行了加热、冷却,也能够防止因热膨胀差异而产生环构件26与中空陶瓷轴20的接合破坏。
在上述实施方式中使用了AlN作为陶瓷板12、中空陶瓷轴20的材料,但也可以使用其它的陶瓷。例如在使用Al2O3的情况下,作为环构件26的材料,优选使用热膨胀系数相近的CuW(11%Cu-89%W,参照表1)。
在上述实施方式中使用了金属密封件30作为密封层,但也可以使用O形圈来替代金属密封件30。在该情况下,使用能够耐受陶瓷加热器10的使用温度的O形圈。
在上述实施方式中,通过TCB来形成金属层28,但也可以通过焊接来形成。作为焊料,可使用以往公知的各种焊料。但是,与焊接相比,TCB更不易在金属层28生成针孔,因而优选。
在上述实施方式中,使用了螺栓32作为紧固构件,但也可以采用图2中所示的结构来替代螺栓32。即,也可以在环构件26的下表面设置多个螺杆26b,使螺杆26b贯通金属密封件30和底板102并从底板102的下表面突出,在该螺杆26b上套上螺母34,且将环构件26拉向底板26并进行紧固。通过这样设定也能够获得与上述实施方式同样的效果。予以说明的是,将螺母34套上螺杆26b时,也可以使用垫圈。
实施例
在采用了上述实施方式(图1)的轴端部安装结构的情况下,以及在采用了图4的以往的轴端部安装结构的情况下,对源自轴端部的He泄漏量进行了评价。具体而言,如图3所示,在腔室100的端口安装He泄漏检测器120,将腔室内真空度设定为5E-2[Pa],将轴端部的温度设定为RT(室温)。在该状态下,向中空陶瓷轴20的内部空间S2吹入He气,读取He泄漏检测器120的数值,将该数值设为RT时的He泄漏量。另外,将轴端部的温度设定为100℃,同样地操作而读取He泄漏检测器120的数值,将该数值设为100℃时的He泄漏量。对于以往的轴端部安装结构,也同样地操作而测定He泄漏量。将其结果示于表2。如表2所示,在采用了图1的轴端部安装结构的情况下,与图4的以往的轴端部安装结构相比,无论在RT时还是在100℃时,He泄漏量都降低至1/10以下。
表2
本申请将在2015年1月20日申请的美国临时申请第62/105,367号作为优先权主张的基础,通过引用将其全部内容包含于本说明书中。
予以说明的是,自不用言,上述实施例对本发明没有任何限定。
产业上的可利用性
本发明可应用于陶瓷加热器、静电卡盘、基座等半导体制造装置用构件。
附图标记说明
10陶瓷加热器;12陶瓷板;12a晶片载置面;12b背面;14加热电极;14a、14b加热端子棒;16 RF电极;16a RF端子棒;18护套热电偶;20中空陶瓷轴;22第1凸缘;24第2凸缘;26环构件;26a螺纹孔;26b螺杆;28金属层;30金属密封件;32螺栓;34螺母;100腔室;102底板;104贯通孔;106金属密封件;108中空陶瓷轴;110凸缘;112陶瓷板;114陶瓷加热器;116夹具;118螺栓;120 He泄漏检测器;S1、S2内部空间。
Claims (5)
1.一种轴端部安装结构,其为将与载置晶片的陶瓷板一体化了的中空陶瓷轴的端部气密地安装于在腔室的底板上设置的贯通孔周边的轴端部安装结构,其具备:
金属材料制或金属-陶瓷复合材料制的环构件,其介由金属层气密地接合于所述中空陶瓷轴的端面,以及
紧固构件,其在所述环构件介由密封层载置于在所述腔室的底板上设置的贯通孔周边的状态下贯通所述底板和所述密封层,且将所述环构件拉向所述底板并进行紧固。
2.根据权利要求1所述的轴端部安装结构,其中,所述紧固构件是从所述底板的下表面贯通所述底板和所述密封层并与所述环构件的螺栓孔螺纹结合的螺栓。
3.根据权利要求1或2所述的轴端部安装结构,其中,所述中空陶瓷轴是AlN制,所述环构件是Mo制、W制或FeNiCo系合金制。
4.根据权利要求1~3中任一项所述的轴端部安装结构,其中,所述金属层是Al层或Al合金层。
5.根据权利要求4所述的轴端部安装结构,其中,所述金属层通过TCB来形成。
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