CN107078086B - 静电夹具以及制造其之方法 - Google Patents

静电夹具以及制造其之方法 Download PDF

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Publication number
CN107078086B
CN107078086B CN201580007196.XA CN201580007196A CN107078086B CN 107078086 B CN107078086 B CN 107078086B CN 201580007196 A CN201580007196 A CN 201580007196A CN 107078086 B CN107078086 B CN 107078086B
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China
Prior art keywords
electrostatic chuck
dielectric layer
layer
microns
thickness
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CN201580007196.XA
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English (en)
Chinese (zh)
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CN107078086A (zh
Inventor
理查德·A·库克
沃弗兰·内夫
卡罗·沃弗莱德
雅各·布莱辛斯基
麦克·汉那根
伟德·罗欧
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Entegris Inc
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Entegris Inc
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Publication of CN107078086A publication Critical patent/CN107078086A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201580007196.XA 2014-02-07 2015-02-06 静电夹具以及制造其之方法 Active CN107078086B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937135P 2014-02-07 2014-02-07
US61/937135 2014-02-07
PCT/US2015/014810 WO2015120265A1 (en) 2014-02-07 2015-02-06 Electrostatic chuck and method of making same

Publications (2)

Publication Number Publication Date
CN107078086A CN107078086A (zh) 2017-08-18
CN107078086B true CN107078086B (zh) 2021-01-26

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Family Applications (1)

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CN201580007196.XA Active CN107078086B (zh) 2014-02-07 2015-02-06 静电夹具以及制造其之方法

Country Status (8)

Country Link
US (1) US10497598B2 (https=)
EP (1) EP3103136B1 (https=)
JP (1) JP6527524B2 (https=)
KR (1) KR102369706B1 (https=)
CN (1) CN107078086B (https=)
SG (1) SG10201806706VA (https=)
TW (1) TWI663681B (https=)
WO (1) WO2015120265A1 (https=)

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Also Published As

Publication number Publication date
CN107078086A (zh) 2017-08-18
EP3103136A1 (en) 2016-12-14
SG10201806706VA (en) 2018-09-27
JP2017507484A (ja) 2017-03-16
EP3103136B1 (en) 2021-06-23
KR20160118259A (ko) 2016-10-11
KR102369706B1 (ko) 2022-03-04
TWI663681B (zh) 2019-06-21
WO2015120265A1 (en) 2015-08-13
US10497598B2 (en) 2019-12-03
US20160336210A1 (en) 2016-11-17
TW201545268A (zh) 2015-12-01
JP6527524B2 (ja) 2019-06-05

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