SG10201806706VA - Electrostatic chuck and method of making same - Google Patents

Electrostatic chuck and method of making same

Info

Publication number
SG10201806706VA
SG10201806706VA SG10201806706VA SG10201806706VA SG10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA
Authority
SG
Singapore
Prior art keywords
electrostatic chuck
electrode
dielectric layer
disposed over
making same
Prior art date
Application number
SG10201806706VA
Other languages
English (en)
Inventor
Richard Cooke
Wolfram Neff
Carlo Waldfried
Jakub Rybczynski
Michael Hanagan
Wade Krull
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201806706VA publication Critical patent/SG10201806706VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201806706VA 2014-02-07 2015-02-06 Electrostatic chuck and method of making same SG10201806706VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201461937135P 2014-02-07 2014-02-07

Publications (1)

Publication Number Publication Date
SG10201806706VA true SG10201806706VA (en) 2018-09-27

Family

ID=52544589

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201806706VA SG10201806706VA (en) 2014-02-07 2015-02-06 Electrostatic chuck and method of making same

Country Status (8)

Country Link
US (1) US10497598B2 (https=)
EP (1) EP3103136B1 (https=)
JP (1) JP6527524B2 (https=)
KR (1) KR102369706B1 (https=)
CN (1) CN107078086B (https=)
SG (1) SG10201806706VA (https=)
TW (1) TWI663681B (https=)
WO (1) WO2015120265A1 (https=)

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US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
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US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
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CN113053774A (zh) * 2019-12-27 2021-06-29 迪科特测试科技(苏州)有限公司 探测装置
KR102701133B1 (ko) * 2020-03-06 2024-09-03 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
EP4256100A1 (en) 2020-12-02 2023-10-11 Oerlikon Surface Solutions AG, Pfäffikon Improved plasma resistant coatings for electrostatic chucks
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US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck
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KR102520805B1 (ko) * 2021-05-10 2023-04-13 주식회사 템네스트 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
WO2023033067A1 (ja) * 2021-08-31 2023-03-09 京セラ株式会社 耐プラズマ積層体、その製造方法、ならびにプラズマ処理装置
WO2023076359A1 (en) * 2021-10-28 2023-05-04 Entegris, Inc. Electrostatic chuck that includes upper ceramic layer that includes a dielectric layer, and related methods and structures
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법
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Also Published As

Publication number Publication date
CN107078086A (zh) 2017-08-18
EP3103136A1 (en) 2016-12-14
JP2017507484A (ja) 2017-03-16
EP3103136B1 (en) 2021-06-23
KR20160118259A (ko) 2016-10-11
KR102369706B1 (ko) 2022-03-04
TWI663681B (zh) 2019-06-21
WO2015120265A1 (en) 2015-08-13
US10497598B2 (en) 2019-12-03
US20160336210A1 (en) 2016-11-17
TW201545268A (zh) 2015-12-01
JP6527524B2 (ja) 2019-06-05
CN107078086B (zh) 2021-01-26

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