CN107039342A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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Publication number
CN107039342A
CN107039342A CN201611242081.1A CN201611242081A CN107039342A CN 107039342 A CN107039342 A CN 107039342A CN 201611242081 A CN201611242081 A CN 201611242081A CN 107039342 A CN107039342 A CN 107039342A
Authority
CN
China
Prior art keywords
chip
wafer
grinding
forming step
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611242081.1A
Other languages
English (en)
Chinese (zh)
Inventor
松冈祐哉
广泽俊郎
广泽俊一郎
辻本浩平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN107039342A publication Critical patent/CN107039342A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
CN201611242081.1A 2016-01-15 2016-12-29 晶片的加工方法 Pending CN107039342A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016006619A JP2017126725A (ja) 2016-01-15 2016-01-15 ウエーハの加工方法
JP2016-006619 2016-01-15

Publications (1)

Publication Number Publication Date
CN107039342A true CN107039342A (zh) 2017-08-11

Family

ID=59365410

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611242081.1A Pending CN107039342A (zh) 2016-01-15 2016-12-29 晶片的加工方法

Country Status (4)

Country Link
JP (1) JP2017126725A (ja)
KR (1) KR20170085949A (ja)
CN (1) CN107039342A (ja)
TW (1) TWI729038B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111975211A (zh) * 2020-08-24 2020-11-24 松山湖材料实验室 一种晶圆异形结构的激光加工方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6817822B2 (ja) * 2017-01-18 2021-01-20 株式会社ディスコ 加工方法
CN109712926B (zh) * 2017-10-25 2021-01-22 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179868A (ja) * 2004-11-25 2006-07-06 Tokyo Seimitsu Co Ltd フィルム剥離方法およびフィルム剥離装置
CN1855381A (zh) * 2005-04-27 2006-11-01 株式会社迪斯科 半导体晶片及其加工方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN102157446A (zh) * 2009-12-04 2011-08-17 株式会社迪思科 晶片的加工方法
CN102403204A (zh) * 2010-09-10 2012-04-04 株式会社迪思科 晶片的加工方法
JP2013008831A (ja) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014199832A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ ウエーハの加工方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5390740B2 (ja) * 2005-04-27 2014-01-15 株式会社ディスコ ウェーハの加工方法
JP5500942B2 (ja) * 2009-10-28 2014-05-21 株式会社ディスコ ウエーハの加工方法
JP5686551B2 (ja) * 2010-08-31 2015-03-18 株式会社ディスコ ウエーハの加工方法
JP6026222B2 (ja) * 2012-10-23 2016-11-16 株式会社ディスコ ウエーハの加工方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179868A (ja) * 2004-11-25 2006-07-06 Tokyo Seimitsu Co Ltd フィルム剥離方法およびフィルム剥離装置
CN1855381A (zh) * 2005-04-27 2006-11-01 株式会社迪斯科 半导体晶片及其加工方法
JP2007019379A (ja) * 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
CN102157446A (zh) * 2009-12-04 2011-08-17 株式会社迪思科 晶片的加工方法
CN102403204A (zh) * 2010-09-10 2012-04-04 株式会社迪思科 晶片的加工方法
JP2013008831A (ja) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014199832A (ja) * 2013-03-29 2014-10-23 株式会社ディスコ ウエーハの加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111975211A (zh) * 2020-08-24 2020-11-24 松山湖材料实验室 一种晶圆异形结构的激光加工方法

Also Published As

Publication number Publication date
TW201735140A (zh) 2017-10-01
KR20170085949A (ko) 2017-07-25
TWI729038B (zh) 2021-06-01
JP2017126725A (ja) 2017-07-20

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Legal Events

Date Code Title Description
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PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170811

RJ01 Rejection of invention patent application after publication