CN107305864A - SiC晶片的加工方法 - Google Patents

SiC晶片的加工方法 Download PDF

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CN107305864A
CN107305864A CN201710251909.8A CN201710251909A CN107305864A CN 107305864 A CN107305864 A CN 107305864A CN 201710251909 A CN201710251909 A CN 201710251909A CN 107305864 A CN107305864 A CN 107305864A
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sic wafer
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formation process
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CN107305864B (zh
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铃木克彦
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Disco Corp
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Abstract

提供SiC晶片的加工方法，能够减少磨削磨具的磨损量。一种SiC晶片的加工方法，包含如下工序：剥离面形成工序，对晶片照射对于SiC具有透过性的波长的激光光线从而在与器件区域对应的区域形成剥离面；器件形成工序，在第1面的器件区域形成由交叉的多条分割预定线划分的多个器件；以及环状槽形成工序，在对应于器件区域与外周剩余区域之间的边界部的部分从第2面侧形成环状槽；以及薄化工序，以剥离面为界面将位于环状槽的内侧的部分从晶片剥离，从而使器件区域薄化，并且形成环状加强部。

Description

SiC晶片的加工方法
技术领域
本发明涉及SiC晶片的加工方法，该SiC晶片具有第1面和与第1面相反的一侧的第2面，在第1面上具有形成有多个器件的器件区域和围绕器件区域的外周剩余区域。
背景技术
在以Si(硅)为原材料的Si晶片的正面上层叠功能层并通过分割预定线划分而形成有IC、LSI等器件。关于Si晶片，通过磨削装置对与形成有多个器件的器件区域对应的背面的区域进行磨削，该磨削装置具有能够旋转的磨削磨轮，在该磨削磨轮上呈环状地配置有磨削磨具。由此，将Si晶片的器件区域薄化至规定的厚度，并且在与围绕器件区域的外周剩余区域对应的背面的区域形成环状加强部。然后，通过切削装置或激光加工装置对分割预定线实施加工而将Si晶片分割成各个器件，分割得到的各器件被应用于移动电话或个人计算机等电子设备中(参照专利文献1。)。
并且，在以SiC(碳化硅)为原材料的SiC晶片的正面上层叠功能层并通过分割预定线划分而形成有功率器件或LED等器件。也通过上述磨削装置对SiC晶片的与形成有器件的器件区域对应的背面的区域进行磨削。由此，将SiC晶片的器件区域薄化至规定的厚度，并且在与围绕器件区域的外周剩余区域对应的背面的区域形成环状加强部。之后，在与各器件对应的背面的区域内形成电极等子器件。然后，通过切削装置或激光加工装置对分割预定线实施加工而将SiC晶片分割成各个器件，分割得到的各器件被应用于移动电话或个人计算机、汽车的控制装置等电子设备中。
专利文献1：日本特开2007-19379号公报
与Si相比，SiC的莫氏硬度非常高，当通过磨削磨轮对SiC晶片的背面进行磨削时，磨削磨具按照磨削量的4～5倍左右磨损而存在不经济的问题。即，当将SiC晶片磨削100μm左右时，磨削磨具磨损400～500μm左右。另一方面，在将Si晶片磨削100μm左右的情况下，磨削磨具的磨损量为0.1μm左右。因此，与对Si晶片进行磨削的情况相比，在对SiC晶片进行磨削的情况下，磨削磨具以4000～5000倍左右的磨损量磨损。
发明内容
本发明是鉴于上述事实而完成的，其课题在于提供SiC晶片的加工方法，能够减少磨削磨具的磨损量。
根据本发明，提供SiC晶片的加工方法，该SiC晶片具有第1面和与该第1面相反的一侧的第2面，在该第1面上具有形成有多个器件的器件区域和围绕该器件区域的外周剩余区域，其中，该晶片的加工方法具有如下的工序：剥离面形成工序，将聚光点定位在从该第1面侧观察深度相当于完工厚度的位置，一边使该SiC晶片与该聚光点相对地移动，一边从该第1面侧或该第2面侧对该SiC晶片照射对于SiC具有透过性的波长的激光光线，由此，在从该第1面侧观察深度相当于完工厚度的位置在与该器件区域对应的区域形成多个由改质层和裂纹构成的直线状的强度降低部，从而形成剥离面；器件形成工序，在实施了该剥离面形成工序之后，在该器件区域形成由交叉的多条分割预定线划分的多个器件；环状槽形成工序，在实施了该器件形成工序之后，在该第1面侧留出相当于完工厚度的厚度，在对应于该器件区域与该外周剩余区域之间的边界部的部分从该第2面侧形成环状槽；薄化工序，在实施了该环状槽形成工序之后，以该剥离面为界面将位于该环状槽的内侧的该第2面侧的部分从该SiC晶片剥离，从而使该器件区域薄化，并且在与该外周剩余区域对应的该第2面的区域形成环状加强部；以及平坦化工序，在实施了该薄化工序之后，对具有该环状加强部的该SiC晶片的该剥离面进行磨削而进行平坦化。
优选在实施了该平坦化工序之后，在已平坦化的该剥离面上的与该多个器件各自对应的区域形成子器件。关于该SiC晶片，c轴相对于与该第1面垂直的垂直轴倾斜，该剥离面形成工序包含如下的工序：强度降低部形成工序，一边在与该c轴倾斜的方向垂直的方向上使该SiC晶片与该聚光点相对地移动一边照射激光光线，从而形成由改质层和从该改质层沿着c面伸长的裂纹构成的直线状的强度降低部；以及转位工序，在该c轴倾斜的方向上对该SiC晶片与该聚光点相对地按照规定的量进行转位进给。
根据本发明的晶片的加工方法，由于以剥离面为界面将位于环状槽的内侧的第2面侧的部分从SiC晶片剥离而使器件区域薄化，所以不用对SiC晶片进行磨削便能够使SiC晶片薄化。并且，在对具有环状加强部的SiC晶片的剥离面进行磨削而进行平坦化时，与通过磨削使SiC晶片薄化的情况相比，能够以较少的磨削量来对SiC晶片的剥离面进行平坦化，所以能够减少磨削磨具的磨损量。进而在本发明的晶片的加工方法中，由于在剥离面形成工序之后实施器件形成工序，所以不存在因激光光线的照射而使器件损伤的可能性。
附图说明
图1的(a)和(b)是SiC晶片的俯视图和主视图。
图2是示出实施剥离面形成工序的状态的立体图。
图3的(a)、(b)和(c)是形成有剥离面的SiC晶片的俯视图、C-C线剖视图和D部放大图。
图4是形成有器件的SiC晶片的俯视图。
图5是示出实施环状槽形成工序的状态的立体图。
图6的(a)和(b)是形成有环状槽的SiC晶片的立体图和剖视图。
图7的(a)和(b)是示出实施薄化工序的状态的立体图。
图8是示出实施平坦化工序的状态的立体图。
标号说明
2：SiC晶片；4：第1面；6：第2面；8：器件区域；10：外周剩余区域；12：边界部；18：垂直轴；28：强度降低部；30：改质层；32：裂纹；34：剥离面；36：器件；38：分割预定线；52：环状槽；68：从晶片剥离出的第2面侧的部分；70：环状加强部。
具体实施方式
以下，参照附图对本发明的SiC晶片的加工方法的实施方式进行说明。
图1所示的圆盘状的六方单晶SiC晶片2(以下称为“晶片2”。)的厚度为700μm，具有第1面4和与第1面4相反的一侧的第2面6。第1面4具有形成有多个器件的圆形的器件区域8和围绕器件区域8的环状的外周剩余区域10。在图1的(a)中，为了方便说明而以点划线示出器件区域8与外周剩余区域10的边界部12，实际上不存在示出边界部12的线。在晶片2的周缘形成有表示晶体取向的第1定向平面14和第2定向平面16。第2定向平面16的长度L2比第1定向平面14的长度L1短(L2<L1)。并且，第1定向平面14与第2定向平面16垂直。在晶片2中，c轴(<0001>方向)相对于与第1面4垂直的垂直轴18朝向第2定向平面16倾斜(以箭头A示出c轴倾斜的方向。)，并且在第2定向平面16侧具有垂直于c轴的c面({0001}面)与第1面4所呈的偏离角α。
在本发明的SiC晶片的加工方法中，首先，实施剥离面形成工序。例如能够使用在图2中示出了其一部分的激光加工装置20来实施剥离面形成工序。激光加工装置20具有卡盘工作台22和聚光器24。卡盘工作台22构成为将被加工物吸附在其上表面上，该卡盘工作台22通过旋转单元以在上下方向上延伸的轴线为中心进行旋转，并且通过X方向移动单元在X方向上进退，通过Y方向移动单元在Y方向上进退(均未图示。)。聚光器24包含聚光透镜(均未图示。)，该聚光透镜用于对从激光加工装置20的脉冲激光振荡器振荡出的脉冲激光光线进行会聚而对被加工物进行照射。另外，X方向是图2中箭头X所示的方向，Y方向是图2中箭头Y所示的方向，是与X方向垂直的方向。X方向和Y方向所规定的平面实际上是水平的。
在剥离面形成工序中，首先，在晶片2的第1面4上粘贴保护部件26。接着，将粘贴了保护部件26的第1面4作为下侧而将晶片2吸附在卡盘工作台22的上表面上。接着，通过X方向移动单元、Y方向移动单元和旋转单元使卡盘工作台22移动和旋转，使第2定向平面16与X方向对齐，并且进行晶片2与聚光器24的对位。由于第2定向平面16通常形成为与c轴倾斜的方向A垂直，所以通过使第2定向平面16与X方向对齐，c轴倾斜的方向A与X方向垂直而且与Y方向对齐。接着，在与器件区域8对应的区域中，将聚光点定位在从第1面4侧观察深度相当于晶片的完工厚度的位置。接着，如图2所示，进行强度降低部形成步骤，一边通过X方向移动单元使卡盘工作台22以规定的加工进给速度在X方向(即，与c轴倾斜的方向A垂直的方向)上移动，一边从聚光器24对晶片2照射对于SiC具有透过性的波长的脉冲激光光线，由此，在与器件区域8对应的区域形成直线状的强度降低部28。接着，进行转位步骤，通过Y方向移动单元使卡盘工作台22在Y方向(即，c轴倾斜的方向A)上以规定的量进行转位进给。然后，通过交替地进行强度降低部形成步骤和转位步骤，如图3所示，在c轴倾斜的方向A上隔开规定的间隔而形成多个强度降低部28，在从第1面4侧观察深度相当于晶片的完工厚度的位置，在与器件区域8对应的区域内形成剥离面34。例如能够在以下的加工条件下实施这样的剥离面形成工序。
激光光线的波长：1064nm
重复频率：80kHz
平均输出：3.2W
脉冲宽度：4ns
聚光光斑直径：φ10μm
聚光透镜的数值孔径(NA)：0.45
转位量：500μm
如图3所示，各强度降低部28由改质层30(分离成Si和C的区域)和裂纹32构成。由于各强度降低部28与c轴倾斜的方向A垂直而且形成在同一深度，所以各强度降低部28的改质层30位于同一c面上。并且，当在晶片2的内部形成改质层30时，裂纹32从改质层30沿着c面在改质层30的两侧传播。在改质层30的单侧传播的裂纹32的长度为250μm左右，即裂纹32的长度Lc为500μm左右。因此在剥离面形成工序中，即使如上述那样将Y方向的转位量Li设为500μm左右，也在从第1面4侧观察相当于完工厚度的深度形成由改质层30和裂纹32构成的剥离面34。
在实施了剥离面形成工序之后实施器件形成工序。在器件形成工序中，首先，将保护部件26从第1面4剥离。接着，在第1面4的器件区域8上层叠功能层而形成多个器件36。如图4所示，各器件36被格子状的分割预定线38划分。这样在本发明的SiC晶片的加工方法中，由于在剥离面形成工序之后实施器件形成工序，所以不存在因激光光线的照射而使器件36损伤的可能性。
在实施了器件形成工序之后实施环状槽形成工序。例如能够使用在图5中示出了其一部分的切削装置40来实施环状槽形成工序。切削装置40具有卡盘工作台42和切削单元44。卡盘工作台42构成为将被加工物吸附在其上表面上，通过旋转单元(未图示。)以在上下方向上延伸的轴线为中心进行旋转。切削单元44包含：实际上水平延伸的圆筒状的主轴外壳46；以及圆柱状的主轴(未图示。)，其以实际上水平延伸的轴线为中心自由旋转地内设在主轴外壳46中。主轴的基端部与电动机(未图示。)连结。并且，在主轴的前端部固定有环状的切削刀具48。切削刀具48的上部被刀具罩50覆盖。
在环状槽形成工序中，首先，在形成有器件36的第1面4上粘贴保护部件51。接着，将粘贴了保护部件51的第1面4作为下侧而将晶片2吸附在卡盘工作台42的上表面上。接着，通过电动机使切削刀具48与主轴一同在图5中箭头B所示的方向上旋转。并且，通过旋转单元使卡盘工作台42按照从上方观察绕顺时针的方向进行旋转。接着，通过上下方向移动单元(未图示。)使主轴外壳46下降，使切削刀具48的刃尖从第2面6侧切入到对应于器件区域8与外周剩余区域10之间的边界部12的部分。由此，在对应于器件区域8与外周剩余区域10之间的边界部12的部分形成环状槽52。在本实施方式中如图6所示，在第1面4侧残留有相当于晶片的完工厚度的厚度T(例如为50μm)。
在实施了环状槽形成工序之后实施薄化工序。例如能够使用在图7中示出了其一部分的剥离装置54来实施薄化工序。剥离装置54具有卡盘工作台56和剥离单元58。卡盘工作台56构成为将被加工物吸附在其上表面上。剥离单元58包含实际上水平延伸的臂60和附设在臂60的前端的电动机62。在电动机62的下表面上连结有吸附片64，该吸附片64以在上下方向上延伸的轴线为中心而自由旋转。在吸附片64中内设有对吸附片64的下表面施加超声波振动的超声波振动施加单元(未图示。)。
在薄化工序中，首先，将粘贴了保护部件51的第1面4作为下侧而将晶片2吸附在卡盘工作台56的上表面上。接着，通过上下方向移动单元(未图示。)使臂60下降，将环状槽52的内侧的第2面6吸附在吸附片64上。接着，使超声波振动施加单元进行动作，对吸附片64的下表面施加超声波振动，并且使电动机62进行动作而使吸附片64旋转。由此，以剥离面34为界面，将位于环状槽52的内侧的第2面6侧的部分68从晶片2剥离，使器件区域8薄化并且在与外周剩余区域10对应的第2面6的区域形成环状加强部70。因此，不用对晶片2进行磨削便能够使晶片2薄化。
在实施了薄化工序之后实施平坦化工序。例如能够使用在图8中示出了其一部分的磨削装置72来实施平坦化工序。磨削装置72具有卡盘工作台74和磨削单元76。卡盘工作台74构成为将被加工物吸附在其上表面上，该卡盘工作台74通过旋转单元(未图示。)以在上下方向上延伸的轴线为中心进行旋转。磨削单元76包含：圆柱状的主轴78，其与电动机(未图示。)连结并在上下方向上延伸；以及圆盘状的磨轮安装座80，其固定在主轴78的下端。通过螺栓82将环状的磨削磨轮84固定在磨轮安装座80的下表面上。在磨削磨轮84的下表面上固定有多个磨削磨具86，该多个磨削磨具86在周向上隔开间隔而呈环状配置。如图8所示，磨削磨轮84的旋转中心相对于卡盘工作台74的旋转中心移位。并且，由多个磨削磨具86规定的圆的外径与器件区域8的半径大致相同。
在平坦化工序中，首先，将粘贴了保护部件51的第1面4作为下侧而将具有环状加强部70的晶片2吸附在卡盘工作台74的上表面上。接着，通过电动机使主轴78以规定的旋转速度(例如为6000rpm)按照从上方观察绕逆时针的方向进行旋转。并且，通过旋转单元使卡盘工作台74以规定的旋转速度(例如为300rpm)按照从上方观察绕逆时针的方向进行旋转。接着，通过上下方向移动单元(未图示。)使主轴78下降，使磨削磨具86与剥离面34接触。在使磨削磨具86与剥离面34接触之后，使主轴78以规定的磨削进给速度(例如为0.1μm/s)下降。由此使剥离面34平坦化。在对剥离面34进行磨削而使其平坦化时，能够通过1～5μm左右的磨削来使剥离面34平坦化，该情况下的磨削磨具86的磨损量为4～25μm左右。另一方面，在通过磨削将700μm的厚度的晶片2薄化至50μm的厚度的情况下，磨削磨具86的磨损量为2.6～3.3mm左右。因此在本实施方式中，与通过磨削来使晶片2薄化的情况相比，能够以较少的磨削量来使晶片2的剥离面34平坦化，所以能够减少磨削磨具86的磨损量。并且，在实施了平坦化工序之后，在与各器件36对应的剥离面34的区域内形成电极等子器件。
另外在上述的实施方式中，以在剥离面形成工序中从晶片2的第2面6侧照射激光光线为例进行了说明，但也可以从晶片2的第1面4侧照射激光光线。

Claims (3)

1.一种SiC晶片的加工方法，该SiC晶片具有第1面和与该第1面相反的一侧的第2面，在该第1面上具有形成有多个器件的器件区域和围绕该器件区域的外周剩余区域，其中，该SiC晶片的加工方法具有如下的工序：
剥离面形成工序，将聚光点定位在从该第1面侧观察深度相当于完工厚度的位置，一边使该SiC晶片与该聚光点相对地移动，一边从该第1面侧或该第2面侧对该SiC晶片照射对于SiC具有透过性的波长的激光光线，由此，在从该第1面侧观察深度相当于完工厚度的位置在与该器件区域对应的区域形成多个由改质层和裂纹构成的直线状的强度降低部，从而形成剥离面；
器件形成工序，在实施了该剥离面形成工序之后，在该器件区域形成由交叉的多条分割预定线划分的多个器件；
环状槽形成工序，在实施了该器件形成工序之后，在该第1面侧留出相当于完工厚度的厚度，在对应于该器件区域与该外周剩余区域之间的边界部的部分从该第2面侧形成环状槽；
薄化工序，在实施了该环状槽形成工序之后，以该剥离面为界面将位于该环状槽的内侧的该第2面侧的部分从该SiC晶片剥离，从而使该器件区域薄化，并且在与该外周剩余区域对应的该第2面的区域形成环状加强部；以及
平坦化工序，在实施了该薄化工序之后，对具有该环状加强部的该SiC晶片的该剥离面进行磨削而进行平坦化。
2.根据权利要求1所述的SiC晶片的加工方法，其中，
在实施了该平坦化工序之后，在已平坦化的该剥离面上的与该多个器件各自对应的区域形成子器件。
3.根据权利要求1所述的SiC晶片的加工方法，其中，
关于该SiC晶片，c轴相对于与该第1面垂直的垂直轴倾斜，
该剥离面形成工序包含如下的工序：
强度降低部形成工序，一边在与该c轴倾斜的方向垂直的方向上使该SiC晶片与该聚光点相对地移动一边照射激光光线，从而形成由改质层和从该改质层沿着c面伸长的裂纹构成的直线状的强度降低部；以及
转位工序，在该c轴倾斜的方向上对该SiC晶片与该聚光点相对地按照规定的量进行转位进给。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110047746A (zh) * 2018-01-16 2019-07-23 株式会社迪思科 平坦化方法
CN111524804A (zh) * 2019-02-05 2020-08-11 株式会社迪思科 生产衬底的方法以及生产衬底的系统
CN111524804B (zh) * 2019-02-05 2024-05-17 株式会社迪思科 生产衬底的方法以及生产衬底的系统

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015008037A1 (de) 2015-06-23 2016-12-29 Siltectra Gmbh Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats
JP6698468B2 (ja) * 2016-08-10 2020-05-27 株式会社ディスコ ウエーハ生成方法
JP2018093046A (ja) * 2016-12-02 2018-06-14 株式会社ディスコ ウエーハ生成方法
JP6914587B2 (ja) * 2017-05-25 2021-08-04 株式会社ディスコ ウェーハの加工方法
JP2019024038A (ja) * 2017-07-24 2019-02-14 株式会社ディスコ ウェーハの加工方法
JP7009194B2 (ja) * 2017-12-12 2022-01-25 株式会社ディスコ ウエーハ生成装置および搬送トレー
JP7046617B2 (ja) * 2018-01-22 2022-04-04 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
DE102018001327A1 (de) * 2018-02-20 2019-08-22 Siltectra Gmbh Verfahren zum Erzeugen von kurzen unterkritischen Rissen in Festkörpern
JP7123583B2 (ja) * 2018-03-14 2022-08-23 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
JP7027215B2 (ja) * 2018-03-27 2022-03-01 株式会社ディスコ ウエーハの生成方法およびウエーハの生成装置
US10685863B2 (en) * 2018-04-27 2020-06-16 Semiconductor Components Industries, Llc Wafer thinning systems and related methods
US11309191B2 (en) 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density
JP7164396B2 (ja) * 2018-10-29 2022-11-01 株式会社ディスコ ウエーハ生成装置
WO2020213479A1 (ja) * 2019-04-19 2020-10-22 東京エレクトロン株式会社 処理装置及び処理方法
JP7266953B2 (ja) * 2019-08-07 2023-05-01 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7405649B2 (ja) * 2020-03-04 2023-12-26 株式会社ディスコ 被加工物の研削方法
JP2022053835A (ja) * 2020-09-25 2022-04-06 株式会社ディスコ ウエーハの分離方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700424A (zh) * 2004-05-20 2005-11-23 株式会社瑞萨科技 半导体器件的制造方法
US7998836B1 (en) * 2010-10-27 2011-08-16 Sumitomo Electric Industries, Ltd. Method for fabricating gallium nitride based semiconductor electronic device
CN104148816A (zh) * 2013-05-13 2014-11-19 株式会社迪思科 激光加工方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007019379A (ja) 2005-07-11 2007-01-25 Disco Abrasive Syst Ltd ウェーハの加工方法
JP2010021398A (ja) * 2008-07-11 2010-01-28 Disco Abrasive Syst Ltd ウェーハの処理方法
JP2011108746A (ja) * 2009-11-13 2011-06-02 Disco Abrasive Syst Ltd ウエーハの加工方法
JP5917862B2 (ja) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 加工対象物切断方法
AU2013222069A1 (en) * 2012-02-26 2014-10-16 Solexel, Inc. Systems and methods for laser splitting and device layer transfer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1700424A (zh) * 2004-05-20 2005-11-23 株式会社瑞萨科技 半导体器件的制造方法
US7998836B1 (en) * 2010-10-27 2011-08-16 Sumitomo Electric Industries, Ltd. Method for fabricating gallium nitride based semiconductor electronic device
CN104148816A (zh) * 2013-05-13 2014-11-19 株式会社迪思科 激光加工方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110047746A (zh) * 2018-01-16 2019-07-23 株式会社迪思科 平坦化方法
CN110047746B (zh) * 2018-01-16 2024-02-20 株式会社迪思科 平坦化方法
CN111524804A (zh) * 2019-02-05 2020-08-11 株式会社迪思科 生产衬底的方法以及生产衬底的系统
CN111524804B (zh) * 2019-02-05 2024-05-17 株式会社迪思科 生产衬底的方法以及生产衬底的系统

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