TWI754631B - ＳｉＣ晶圓的加工方法 - Google Patents

ＳｉＣ晶圓的加工方法 Download PDF

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TWI754631B
TWI754631B TW106107997A TW106107997A TWI754631B TW I754631 B TWI754631 B TW I754631B TW 106107997 A TW106107997 A TW 106107997A TW 106107997 A TW106107997 A TW 106107997A TW I754631 B TWI754631 B TW I754631B
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鈴木克彦
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Abstract

提供一種能夠減低研磨砥石的磨耗量之SiC晶圓的加工方法。
一種SiC晶圓的加工方法，包含：剝離面形成工程，將對於SiC而言具有穿透性的波長之雷射光線對晶圓照射，藉此在對應於裝置區域之區域形成剝離面；及裝置形成工程，將藉由交叉的複數個分割預定線而被劃分之複數個裝置形成於第1面的裝置區域；及環狀溝形成工程，在對應於裝置區域與外周剩餘區域之交界部的部分從第2面側形成環狀溝；及薄化工程，以剝離面為界面，將位於環狀溝的內側之部分從晶圓剝離而將裝置區域薄化，並且形成環狀補強部。

Description

SiC晶圓的加工方法
本發明有關SiC晶圓的加工方法，該SiC晶圓具有第1面及和第1面相反側的第2面，在第1面具備供複數個裝置形成之裝置區域與圍繞裝置區域之外周剩餘區域。
IC或LSI等裝置，是在以Si(矽)為素材之Si晶圓的表面層積機能層並藉由分割預定線被劃分而形成。Si晶圓，其對應於形成有複數個裝置的裝置區域之背面的區域係藉由研磨裝置而受到研磨，該研磨裝置具備複數個研磨砥石以環狀配置而成之可旋轉的研磨輪。藉此，Si晶圓其裝置區域被薄化至規定的厚度，並且在對應於圍繞裝置區域的外周剩餘區域之背面的區域會形成環狀補強部。然後，Si晶圓藉由切削裝置或雷射加工裝置對其分割預定線施以加工而被分割成一個個裝置，分割出的各裝置被利用於行動電話或電腦等電子機器(參照專利文獻1)。
此外，功率裝置或LED等裝置，是在以SiC(碳化矽)為素材之SiC晶圓的表面層積機能層並藉由分 割預定線被劃分而形成。SiC晶圓，其對應於形成有裝置的裝置區域之背面的區域亦是藉由上述研磨裝置而被研磨。藉此，SiC晶圓其裝置區域被薄化至規定的厚度，並且在對應於圍繞裝置區域的外周剩餘區域之背面的區域會形成環狀補強部。其後，在對應於各裝置之背面的區域會形成電極等子裝置。然後，SiC晶圓藉由切削裝置或雷射加工裝置對其分割預定線施以加工而被分割成一個個裝置，分割出的各裝置被利用於行動電話或電腦、汽車的控制裝置等電子機器。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2007-19379號公報
SiC相較於Si而言莫氏硬度非常高，若藉由研磨輪來研磨SiC晶圓的背面，則研磨砥石會磨耗達研磨量的4~5倍程度，而有不經濟的問題。也就是說，若欲將SiC晶圓研磨100μm程度，則研磨砥石會磨耗400~500μm程度。另一方面，將Si晶圓研磨100μm程度的情形下，研磨砥石的磨耗量為0.1μm程度。是故，當研磨SiC晶圓，相較於研磨Si晶圓的情形，研磨砥石會磨耗4000~5000倍程度。
鑑於上述事實而研發之本發明的課題，在於提供一種能夠減低研磨砥石的磨耗量之SiC晶圓的加工方法。
按照本發明，提供一種SiC晶圓的加工方法，該SiC晶圓具有第1面及和第1面相反側的第2面，在該第1面具備供複數個裝置形成之裝置區域與圍繞該裝置區域之外周剩餘區域，該SiC晶圓的加工方法，包含：剝離面形成工程，將聚光點置放於從該第1面側觀看相當於完成厚度的深度之位置，一面令該SiC晶圓與該聚光點相對地移動一面將對於SiC而言具有穿透性的波長之雷射光線從該第1面側或該第2面側對該SiC晶圓照射，藉此於從該第1面側觀看相當於完成厚度的深度之位置在對應於該裝置區域之區域形成複數個由改質層及裂痕所構成之直線狀的強度降低部，而形成剝離面；及裝置形成工程，實施了該剝離面形成工程後，將藉由交叉的複數個分割預定線而被劃分之複數個裝置形成於該裝置區域；及環狀溝形成工程，實施了該裝置形成工程後，在該第1面側留下相當於完成厚度之厚度，在對應於該裝置區域與該外周剩餘區域之交界部的部分從該第2面側形成環狀溝；及薄化工程，實施了該環狀溝形成工程後，以該剝離面為界面，將位於該環狀溝的內側之該第2面側的部分從該SiC晶圓剝離而將該裝置區域薄化，並且在對應於該外周剩餘區域 之該第2面的區域形成環狀補強部；及平坦化工程，實施了該薄化工程後，將具有該環狀補強部之該SiC晶圓的該剝離面予以研磨而平坦化。
較佳是，實施了該平坦化工程後，在對應於已被平坦化之該剝離面中的該複數個裝置的各者之區域形成子裝置。該SiC晶圓，相對於垂直於該第1面之垂直軸而言，c軸係傾斜，該剝離面形成工程，包含：強度降低部形成工程，於和該c軸的傾倒方向正交之方向一面令該SiC晶圓與該聚光點相對地移動一面照射雷射光線，藉此形成由改質層及裂痕所構成之直線狀的強度降低部；及分度工程，於該c軸的傾倒方向將該SiC晶圓與該聚光點相對地分度饋送規定量。
按照本發明之晶圓的加工方法，是以剝離面為界面，將位於環狀溝的內側之第2面側的部分從SiC晶圓剝離而將裝置區域薄化，故無需研磨SiC晶圓便能將SiC晶圓薄化。此外，將具有環狀補強部之SiC晶圓的剝離面予以研磨而平坦化時，相較於藉由研磨將SiC晶圓薄化之情形，能夠以較少的研磨量將SiC晶圓的剝離面平坦化，因此能夠減低研磨砥石的磨耗量。又，本發明之晶圓的加工方法中，是在剝離面形成工程之後實施裝置形成工程，故不會有雷射光線的照射所造成之裝置損傷之虞。
2‧‧‧SiC晶圓
4‧‧‧第1面
6‧‧‧第2面
8‧‧‧裝置區域
10‧‧‧外周剩餘區域
12‧‧‧交界部
18‧‧‧垂直軸
28‧‧‧強度降低部
30‧‧‧改質層
32‧‧‧裂痕
34‧‧‧剝離面
36‧‧‧裝置
38‧‧‧分割預定線
52‧‧‧環狀溝
68‧‧‧從晶圓剝離之第2面側的部份
70‧‧‧環狀補強部
[圖1]SiC晶圓的俯視圖及正面圖。
[圖2]正在實施剝離面形成工程之狀態示意立體圖。
[圖3]形成了剝離面之SiC晶圓的俯視圖、C-C線截面圖及D部擴大圖。
[圖4]形成了裝置之SiC晶圓的俯視圖。
[圖5]正在實施環狀溝形成工程之狀態示意立體圖。
[圖6]形成了環狀溝之SiC晶圓的立體圖及截面圖。
[圖7]正在實施薄化工程之狀態示意立體圖。
[圖8]正在實施平坦化工程之狀態示意立體圖。
以下一面參照圖面，一面說明本發明之SiC晶圓的加工方法的實施形態。
圖1所示之圓盤狀的六方晶單晶SiC晶圓2(以下稱「晶圓2」)，厚度為700μm，具有第1面4、及和第1面4相反側的第2面6。第1面4，具備供複數個裝置形成之圓形狀的裝置區域8、及圍繞裝置區域8之環狀的外周剩餘區域10。圖1(a)中，為求簡便係將裝置區域8與外周剩餘區域10之交界部12以單點鏈線表示，但實際上不存在表示交界部12的線。在晶圓2的周緣，形成有示意結晶方位之第1定向平邊(orientation flat)14及第2定向平邊16。第2定向平邊16的長度 L2，比第1定向平邊14的長度L1還短(L2<L1)。此外，第1定向平邊14和第2定向平邊16正交。晶圓2中，相對於對第1面4垂直的垂直軸18而言c軸(<0001>方向)係朝向第2定向平邊16傾倒(將c軸的傾倒方向以箭頭A表示)，此外在第2定向平邊16側具有由和c軸正交的c面({0001}面)與第1面4所夾之OFF角α。
本發明之SiC晶圓的加工方法中，首先，實施剝離面形成工程。剝離面形成工程，例如能夠使用圖2中部份揭示之雷射加工裝置20來實施。雷射加工裝置20，具備夾盤平台(chuck table)22及聚光器24。以在上面吸附被加工物之方式所構成的夾盤平台22，係藉由旋轉手段而以朝上下方向延伸的軸線為中心來旋轉，並且藉由X方向移動手段而於X方向進退，藉由Y方向移動手段而於Y方向進退(均未圖示)。聚光器24，包含用來將從雷射加工裝置20的脈衝雷射振盪器振盪出的脈衝雷射光線予以聚光而對被加工物照射之聚光透鏡(均未圖示)。另，X方向為圖2中箭頭X所示之方向，Y方向為圖2中箭頭Y所示之方向且為和X方向正交之方向。X方向及Y方向所規範之平面係實質上水平。
剝離面形成工程中，首先，對晶圓2的第1面4貼附保護構件26。接下來，以貼附有保護構件26之第1面4作為下側，令晶圓2吸附於夾盤平台22的上面。接下來，藉由X方向移動手段、Y方向移動手段及旋 轉手段令夾盤平台22移動及旋轉，令第2定向平邊16切齊X方向，並且進行晶圓2與聚光器24之對位。一般而言第2定向平邊16是形成為和c軸的傾倒方向A正交，故藉由令第2定向平邊16切齊X方向，c軸的傾倒方向A便會和X方向正交且切齊Y方向。接下來，在對應於裝置區域8之區域，將聚光點置放於從第1面4側觀看相當於晶圓的完成厚度的深度之位置。接下來，進行強度降低部形成步驟，亦即如圖2所示般，令夾盤平台22以規定的加工饋送速度藉由X方向移動手段一面於X方向(也就是說，和c軸的傾倒方向A正交之方向)移動，一面從聚光器24對晶圓2照射對於SiC而言具有穿透性的波長之脈衝雷射光線，藉此在對應於裝置區域8之區域形成直線狀的強度降低部28。接下來，進行分度步驟，亦即藉由Y方向移動手段將夾盤平台22於Y方向(也就是說，c軸的傾倒方向A)分度饋送規定量。然後，交互進行強度降低部形成步驟與分度步驟，藉此如圖3所示般，於c軸的傾倒方向A相距規定間隔形成複數個強度降低部28，而在從第1面4側觀看相當於晶圓的完成厚度的深度之位置，在對應於裝置區域8之區域形成剝離面34。這樣的剝離面形成工程，例如能夠依以下的加工條件來實施。
雷射光線的波長：1064nm
反覆頻率：80kHz
平均輸出：3.2W
脈衝寬度：4ns
聚光點徑：
Figure 106107997-A0202-12-0008-9
10μm
聚光透鏡的數值孔徑(NA)：0.45
分度量：500μm
如圖3所示般，各強度降低部28係由改質層30(分離成Si與C之區域)及裂痕32所構成。各強度降低部28，和c軸的傾倒方向A正交，且形成於同一深度，因此各強度降低部28的改質層30會位於同一c面上。此外，在晶圓2的內部形成改質層30時，裂痕32會從改質層30沿著c面朝改質層30的兩側綿延。朝改質層30的單側綿延之裂痕32的長度為250μm程度，也就是說裂痕32的長度Lc為500μm程度。是故剝離面形成工程中，即使如上述般將Y方向的分度量Li訂為500μm程度，仍會在從第1面4側觀看相當於完成厚度的深度形成由改質層30及裂痕32所構成之剝離面34。
實施了剝離面形成工程後，實施裝置形成工程。裝置形成工程中，首先，從第1面4將保護構件26剝離。接下來，在第1面4的裝置區域8層積機能層而形成複數個裝置36。如圖4所示般，各裝置36藉由格子狀的分割預定線38而被劃分。像這樣，本發明之SiC晶圓的加工方法中，是在剝離面形成工程之後實施裝置形成工程，故不會有因雷射光線的照射而裝置36損傷之虞。
實施了裝置形成工程後，實施環狀溝形成工程。環狀溝形成工程，例如能夠使用圖5中部份揭示之切 削裝置40來實施。切削裝置40，具備夾盤平台42及切削手段44。以在上面吸附被加工物之方式所構成的夾盤平台42，係藉由旋轉手段(未圖示)而以朝上下方向延伸的軸線為中心來旋轉。切削手段44，具有實質上水平延伸之圓筒狀的心軸機殼(spindle housing)46、及以實質上水平延伸的軸線為中心而旋轉自如地內藏於心軸機殼46之圓柱狀的心軸(未圖示)。在心軸的基端部連結著馬達(未圖示)。此外，在心軸的先端部固定有環狀的切削刀48。切削刀48的上部被刀罩50覆蓋。
環狀溝形成工程中，首先，對形成有裝置36之第1面4貼附保護構件51。接下來，以貼附有保護構件51之第1面4作為下側，令晶圓2吸附於夾盤平台42的上面。接下來，朝圖5中箭頭B所示之方向，令切削刀48和心軸一起藉由馬達而旋轉。此外，令夾盤平台42從上方觀看順時針地藉由旋轉手段而旋轉。接下來，藉由上下方向移動手段(未圖示)令心軸機殼46下降，令切削刀48的刀尖從第2面6側切入至對應於裝置區域8與外周剩餘區域10之交界部12的部分。藉此，在對應於裝置區域8與外周剩餘區域10之交界部12的部分便會形成環狀溝52。本實施形態中如圖6所示般，係在第1面4側留下相當於晶圓的完成厚度之厚度T(例如50μm)。
實施了環狀溝形成工程後，實施薄化工程。薄化工程，例如能夠使用圖7中部份揭示之剝離裝置54來實施。剝離裝置54，具備夾盤平台56及剝離手段58。 夾盤平台56，是以在上面吸附被加工物之方式所構成。剝離手段58，包含實質上水平延伸之臂60、及附設於臂60的先端之馬達62。在馬達62的下面，連結著以朝上下方向延伸的軸線為中心而旋轉自如之圓盤狀的吸附片64。吸附片64中，內藏著對吸附片64的下面賦予超音波振動之超音波振動賦予手段(未圖示)。
薄化工程中，首先，以貼附有保護構件51之第1面4作為下側，令晶圓2吸附於夾盤平台56的上面。接下來，藉由上下方向移動手段(未圖示)令臂60下降，在環狀溝52的內側令第2面6吸附於吸附片64。接下來，令超音波振動賦予手段作動，對吸附片64的下面賦予超音波振動，並且令馬達62作動而令吸附片64旋轉。藉此，以剝離面34為界面，位於環狀溝52的內側之第2面6側的部分68會從晶圓2被剝離，裝置區域8會被薄化並且在對應於外周剩餘區域10之第2面6的區域會形成環狀補強部70。是故，無需研磨晶圓2便能將晶圓2薄化。
實施了薄化工程後，實施平坦化工程。平坦化工程，例如能夠使用圖8中部份揭示之研磨裝置72來實施。研磨裝置72，具備夾盤平台74及研磨手段76。以在上面吸附被加工物之方式所構成的夾盤平台74，係藉由旋轉手段(未圖示)而以朝上下方向延伸的軸線為中心來旋轉。研磨手段76，包含連結至馬達(未圖示)而朝上下方向延伸之圓柱狀的心軸78、及固定於心軸78的下 端之圓盤狀的輪座80。在輪座80的下面藉由螺栓82而固定著環狀的研磨輪84。在研磨輪84的下面，固定著於圓周方向相距間隔而以環狀配置之複數個研磨砥石86。如圖8所示般，研磨輪84的旋轉中心相對於夾盤平台74的旋轉中心而言係有位移。此外，複數個研磨砥石86所規範之圓的外徑，和裝置區域8的半徑近乎相同。
平坦化工程中，首先，以貼附有保護構件51之第1面4作為下側，令具有環狀補強部70之晶圓2吸附於夾盤平台74的上面。接下來，令心軸78從上方觀看逆時針地以規定的旋轉速度(例如6000rpm)藉由馬達而旋轉。此外，令夾盤平台74從上方觀看逆時針地以規定的旋轉速度(例如300rpm)藉由旋轉手段而旋轉。接下來，藉由上下方向移動手段(未圖示)令心軸78下降，令研磨砥石86接觸至剝離面34。令研磨砥石86接觸至剝離面34後，以規定的研磨饋送速度(例如0.1μm/s)令心軸78下降。藉此，剝離面34會被平坦化。將剝離面34研磨而平坦化時，能夠藉由1~5μm程度的研磨來將剝離面34平坦化，在此情形下的研磨砥石86的磨耗量為4~25μm程度。另一方面，當將700μm厚度的晶圓2藉由研磨而薄化至50μm厚度的情形下，研磨砥石86的磨耗量為2.6~3.3mm程度。是故本實施形態中，相較於藉由研磨將晶圓2薄化之情形，能夠以較少的研磨量將晶圓2的剝離面34平坦化，因此能夠減低研磨砥石86的磨耗量。然後，實施了平坦化工程後，在對應於各裝置36之 剝離面34的區域形成電極等子裝置(sub device)。
另，上述實施形態中，雖說明了在剝離面形成工程中從晶圓2的第2面6側照射雷射光線之例子，但亦可從晶圓2的第1面4側照射雷射光線。
2‧‧‧SiC晶圓
34‧‧‧剝離面
51‧‧‧保護構件
52‧‧‧環狀溝
54‧‧‧剝離裝置
56‧‧‧夾盤平台
58‧‧‧剥離手段
60‧‧‧臂
62‧‧‧馬達
64‧‧‧吸附片
68‧‧‧從晶圓剝離之第2面側的部份
70‧‧‧環狀補強部

Claims (3)

  1. 一種SiC晶圓的加工方法，該SiC晶圓具有第1面及和第1面相反側的第2面，在該第1面具備供複數個裝置形成之裝置區域與圍繞該裝置區域之外周剩餘區域，該SiC晶圓的加工方法，具備：剝離面形成工程，將聚光點置放於從該第1面側觀看於該SiC晶圓的厚度方向相當於完成厚度的深度之位置，一面令該SiC晶圓與該聚光點相對地於和該SiC晶圓的厚度方向非平行之方向移動一面將對於SiC而言具有穿透性的波長之雷射光線從該第1面側或該第2面側對該SiC晶圓照射，藉此於從該第1面側觀看相當於完成厚度的深度之位置在對應於該裝置區域之區域形成複數個由改質層及裂痕所構成之直線狀的強度降低部，而形成剝離面；及裝置形成工程，實施了該剝離面形成工程後，將藉由交叉的複數個分割預定線而被劃分之複數個裝置形成於該裝置區域；及環狀溝形成工程，實施了該裝置形成工程後，在該第1面側留下相當於完成厚度之厚度，在對應於該裝置區域與該外周剩餘區域之交界部的部分從該第2面側形成環狀溝；及薄化工程，實施了該環狀溝形成工程後，以該剝離面為界面，將位於該環狀溝的內側之該第2面側的部分從該SiC晶圓剝離而將該裝置區域薄化，並且在對應於該外周 剩餘區域之該第2面的區域形成環狀補強部；及平坦化工程，實施了該薄化工程後，將具有該環狀補強部之該SiC晶圓的該剝離面予以研磨而平坦化。
  2. 如申請專利範圍第1項所述之SiC晶圓的加工方法，其中，實施了該平坦化工程後，在對應於已被平坦化之該剝離面中的該複數個裝置的各者之區域形成子裝置。
  3. 如申請專利範圍第1項所述之SiC晶圓的加工方法，其中，該SiC晶圓，相對於垂直於該第1面之垂直軸而言，c軸係傾斜，該剝離面形成工程，包含：強度降低部形成工程，於和該c軸的傾倒方向正交之方向一面令該SiC晶圓與該聚光點相對地移動一面照射雷射光線，藉此形成由改質層及從該改質層沿著c面延伸的裂痕所構成之直線狀的強度降低部；及分度工程，於該c軸的傾倒方向將該SiC晶圓與該聚光點相對地分度饋送規定量。
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