1262553 圓切割成 割之晶圓 路係製作 ，或者在 個個別晶 械切割、 而其係皆 surface 起晶圓崩 離處產生 體化分離 圓切割研 面，由晶 二貼帶於 貼帶，之 無法作切 著，黏貼 之主動表 片貼帶且 且製程成 民國專利 圓已見於 程」，其 主動表面 圓之主動 由於晶圓 位，只能 貼帶於該 第二貼帶 背面之處 一晶 磨製 圓之 該晶 後， 割定 第三 面之 晶圓 本南 公告 五、發明說明（i) 【發明所屬之技術領域 本發明係有關於晶 於一種由晶圓背面半切 【先前技術】 習知大量的積體電 完成積體電路製作之後 要將該晶圓切割為複數 切割係區分為鑽石刀機 射混用之切割方式，然 路之主動表面〔active 之主動表面切割容易引 即在晶圓之背面切割分 品信賴度。 利用多次切割以單 利公告第420 845號「晶 貼片黏貼於一晶圓之背 半切割步驟，再黏貼第 除該晶圓之背面之第一 係已被第二貼帶遮蔽， 處理該晶圓之背面，接 之背面，並去除該晶圓 一習知方法需要耗用三 磨方式，作業流程複雜 另，申請人於中華 晶粒之技術’特別係有關 切割方法。 於一晶圓〔waf er〕，再 該晶圓形成凸塊之後，需 粒〔dices〕’目前晶圓 雷射切割以及鑽石刀與雷 由該晶圓已形成有積體電 〕切割’但因直接由晶圓 裂〔chipping〕之缺陷， 小裂片，會影響晶粒之產 中華民國專 係先將第一 進行第一次 表面，且去 之主動表面 以研磨方式 晶圓研磨後 ，因此，此 理僅能用研 第478058揭示一種由1262553 Circular cutting into a cut wafer system, or in a single crystal machine cutting, and the system is surface from the wafer collapse to produce a body separation and separation of the circular grinding surface, by the crystal two stickers on the tape, It is impossible to make a cut, the active surface of the adhesive tape is attached and the process is completed in the Republic of China patent circle. The active surface circle is active because of the wafer position, and can only be attached to the back of the second tape. After grinding the crystal of the circle, the wafer of the third side is cut. The present invention is related to the invention. (i) [Technical Field] The present invention relates to crystals which are half-cut by the back side of the wafer. [Prior Art] Knowing that a large amount of integrated electricity is completed after the integrated circuit is fabricated, the wafer is cut into a plurality of cutting systems, which are classified into diamond cutting machines, and the active surface of the active surface is actively introduced. The back side cuts the reliability of the product. Utilizing multiple cuts to singularly announce No. 420 845, "The wafer is adhered to the back half-cut step of a wafer, and the first line of the back of the wafer is pasted by the second tape, and the The back side of the wafer, the back side of the wafer, and the removal of the wafer, a conventional method requires three grinding methods, and the operation process is complicated. In addition, the applicant's technology in the Chinese die is specially related to the cutting method. Waf er], after the wafer is formed into bumps, it is required to diced 'the current wafer laser cutting and the diamond knife and the thunder have formed an integrated body of the wafer. 'But it is directly broken by the wafer [chipping] defects, small lobes, will affect the production of grains. The Republic of China specializes in the first surface first, and the active surface is polished by grinding. Therefore, this theory can only be used. 478058 discloses a
IHI 第7頁 1262553 五、發明說明（2) 晶圓背面切，之方法，其係在該晶圓之主動表面上之切割 線=-貫穿L構，由該晶圓之背面以該貫穿結構所界定 之參考定位點，將該晶圓切割為晶粒 直接切割至該晶圓之主動表面，戶斤以容：π法係-次 主動表面產生崩裂，而造成對於產品_ 5f f晶圓之 因此需預先以封膠塑料封裝該晶圓之^ 2，良付更差， ^ ^ ^ 日日圓之主動表面係為解決該 t:::ΐ穿姓：手段’故上述之晶圓背面切割之方法額 :ΪΪ产形成步驟與封膠塑料封裝步•，將亦增 二=;复雜度且製程成本亦變得較高。 “ii%月二要目的係在於提供-種晶圓切割方法，其 係利用在第次切割步驟中，藉由在一曰夕士毹本品= 而在該晶圓之背面开彡i'l机以雷射切割該晶圓之背面， 切刻線，且在形成===溝槽’該些溝槽係對應該些 面上之該些切割槽時’係不移除該晶圓之主動表 割線作為切割定彳立赴者，在第二次切割時，仍以該些切 化分離該晶圓成為〔*而切割該晶圓之主動表面，以單體 多次切割對位良好複數個分離之晶粒，因此本發明係達到 後分離之晶粒^具=需要重覆貼膠獏之功效，並且切割 本發明之次二有崩裂〔chipping〕之缺陷。 面半切割方法?其目的係在於提供一種免用膠膜之晶圓背 有/開口，該門、係將一晶圓固定於一框架，該框架係具 動表面上形成:晶圓之背面’並以該晶圓之主 ^綠作為切割該晶圓背面之定位點，雷IHI Page 7 1262553 V. INSTRUCTIONS (2) Wafer back-cutting method, which is a cutting line on the active surface of the wafer =-through L-structure, from the back side of the wafer to the through-structure Defining the reference location, cutting the wafer into a die directly cut to the active surface of the wafer, and the π-method-primary surface is cracked, resulting in a wafer for the product _ 5f f It is necessary to pre-package the wafer with a plastic seal, and the good payout is worse. ^ ^ ^ The active surface of the Japanese yen is to solve the t:::ΐ穿穿: means' Amount: The step of forming the tantalum and the step of sealing the plastic packaging will increase by two; the complexity and the cost of the process will also become higher. "ii% of the second purpose of the month is to provide a wafer cutting method, which is used in the first cutting step, by opening the i'l on the back of the wafer. The machine cuts the back side of the wafer by laser, scribes the line, and when forming the === trenches, the grooves are corresponding to the cutting grooves on the faces, the system does not remove the active The secant line is set as the cutting clerk. In the second dicing, the wafer is still separated by the dicing to become [* and the active surface of the wafer is cut, and the aligning is performed multiple times by the monomer. Separating the crystal grains, so the present invention achieves the effect of post-separation of the crystal molds = the need to re-apply the adhesive crucible, and the second sub-cutting defects of the present invention are cut. In order to provide a wafer-free back/opening, the door fixes a wafer to a frame, and the frame is formed on the moving surface: the back side of the wafer and the main body of the wafer Green as the anchor point for cutting the back side of the wafer, Ray
M9 第8頁 1262553 五、發明說明（3) 射切割該晶圓之背面9而形成複數個溝槽，且在形成該些 溝槽時不移除該晶圓之主動表面上之該些切割線，以達到 免用膠膜之晶圓背面半切割，並且更可在半切割過程同時 雷射標記之功效。 依本發明之晶圓切割方法，其包含有下列步驟： 提供一晶圓，該晶圓係具有一主動表面及一對應之背 面，其中該晶圓之該主動表面係形成有複數個切割線，以 界定該晶圓中之複數個晶粒，該晶圓係可為裸晶圓〔bare wafer〕、已封裝晶圓〔packaged wafer〕或具有凸塊之 晶圓〔bumped wafer〕； 執行第一次切割，其係以該晶圓之該主動表面之該些 切割線作為切割定位點，雷射切割該晶圓之背面，而在該 背面形成複數個溝槽，該些溝槽係對應該些切割線，並且 在形成該些溝槽時，係不移除該晶圓之主動表面上之該些 切割線，及 執行第二次切割，其係在該晶圓之背面貼設一膠膜， 並再以該晶圓之該主動表面之該些切割線為切割定位點， 切割該晶圓之主動表面，以單體化分離該晶圓成為複數個 晶粒，且該些晶粒係黏著於該膠膜。 【實施方式】 參閱所附圖式，本發明將列舉以下之實施例說明。 請參閱第1圖，本發明之晶圓切割方法係包含有「提 供一晶圓」步驟1、 「第一次切割」步驟2及「第二次切 割」步驟3，其步驟詳述如后。M9 Page 8 1262553 V. Description of the Invention (3) A plurality of trenches are formed by cutting the back surface 9 of the wafer, and the cutting lines on the active surface of the wafer are not removed when the trenches are formed In order to achieve the semi-cut of the back side of the wafer without the use of the film, and the effect of the laser marking at the same time in the half-cut process. The wafer dicing method according to the present invention comprises the steps of: providing a wafer having an active surface and a corresponding back surface, wherein the active surface of the wafer is formed with a plurality of cutting lines. To define a plurality of dies in the wafer, the wafer can be a bare wafer, a packaged wafer, or a bumped wafer; Cutting, the cutting lines of the active surface of the wafer are used as cutting positioning points, laser cutting the back surface of the wafer, and forming a plurality of trenches on the back surface, the trenches are correspondingly cut And forming the trenches without removing the dicing lines on the active surface of the wafer and performing a second dicing on the back side of the wafer, and Then, the cutting lines of the active surface of the wafer are used as cutting positioning points, and the active surface of the wafer is cut to separately separate the wafer into a plurality of crystal grains, and the crystal grains are adhered thereto. Film. [Embodiment] The present invention will be described by way of the following examples. Referring to Fig. 1, the wafer dicing method of the present invention comprises a "providing a wafer" step 1, a "first dicing" step 2 and a "second dicing" step 3, the steps of which are detailed below.
1262553 五、發明說明（4) -- 首先’請參閱第2、3圖’在「提供一晶圓」步驟1 中，其係提供一晶圓1 〇，該晶圓1 〇係具有一主動表面丨丨及 一對應之背面1 2，其中該晶圓1 〇之該主動表面丨丨係形成有 複數個切割線1 3，以界定該晶圓1 〇中之複數個晶粒丨4，並 以a亥些切割線1 3作為晶圓切割之定位點，該晶圓丨〇係可為 裸晶圓、已封裝晶圓或具有凸塊之晶圓，依本發明之晶圓 切割方法係不局限該晶圓1 0之型態，在本實施例中，該晶 圓10係另包含有複數個凸塊20，其係形成於該主動表面^ 上。 之後，請參閱第4圖，在「第一次切割」步驟2中，該 晶圓1 0係固定於一雷射設備内框架3 〇，該框架3 〇係具有一 開口 3 1 ’以顯露該晶圓1 〇之背面1 2，在該晶圓1 〇之背面J 2 下方係設有一雷射光激發裝置4〇，且在該晶圓1 〇之主動表 面11上方係設有一攝影定位裝置50，WCCD攝影器 〔Charge Couple Device,電荷耦合器〕，用以抓取該些 切割線1 3之位置，以作為切割定位該晶圓丨〇之定位點，而 該雷射光激發裝置40係可利用習知機械同轴移動機構〈圖 未繪出〉，其係對應於該些切割線1 3進行垂直向同步移 動’並且雷射切割該晶圓1 〇之該背面1 2，因此，以該晶圓 1 0之該主動表面11之該些切割線1 3作為切割定位點，泰射 切割該晶圓1 0之背面1 2，而在該背面1 2形成複數個溝槽 1 5 ’該些溝槽1 5係對應於該些切割線1 3，並且在形成該些 溝槽1 5時，係不移除該晶圓1 〇之主動表面11之該些切割線 1 3 ’故該些溝槽1 5之雷射切割深度係不大於該晶圓1 〇之厚1262553 V. INSTRUCTIONS (4) -- First, please refer to Figure 2 and Figure 3 in Step 1 of "Providing a Wafer", which provides a wafer 1 〇, which has an active surface And a corresponding back surface 1 2, wherein the active surface of the wafer 1 is formed with a plurality of cutting lines 13 to define a plurality of crystal grains 4 in the wafer 1 a Hai cutting line 13 is used as a positioning point for wafer cutting, and the wafer can be a bare wafer, a packaged wafer or a bumped wafer. The wafer cutting method according to the present invention is not limited. In the embodiment of the wafer 10, the wafer 10 further includes a plurality of bumps 20 formed on the active surface. Thereafter, referring to FIG. 4, in the "first cutting" step 2, the wafer 10 is fixed to a laser device inner frame 3, and the frame 3 has an opening 3 1 ' to reveal the a laser light excitation device 4 is disposed under the back surface J 2 of the wafer 1 , and a photo positioning device 50 is disposed above the active surface 11 of the wafer 1 . a WCCD camera (Charge Couple Device) for grasping the positions of the cutting lines 13 as a positioning point for cutting and positioning the wafer cassette, and the laser light excitation device 40 can utilize The mechanical coaxial moving mechanism (not shown) corresponds to the vertical synchronous movement of the cutting lines 13 and the laser cuts the back surface 1 of the wafer 1 , so the wafer is The cutting lines 13 of the active surface 11 are used as cutting positioning points, and the back surface 1 2 of the wafer 10 is cut by the Thai, and a plurality of grooves 1 5 'the trenches are formed on the back surface 1 2 1 5 corresponds to the cutting lines 13 , and the wafers are not removed when the trenches 15 are formed 1 The cutting lines of the active surface 11 are 1 3 ′, so the laser cutting depth of the trenches 15 is not greater than the thickness of the wafer 1
Mi 第10頁 1262553 五、發明說明（5) 度，在本實施例中，該切割深度約為該晶圓1〇厚度之二分 ，一或更淺，以達到免用膠膜之半切割功效，較佳地在 ^ ώ Α 了 π β日日SU 〇之背面1 2進行 雷射標記〔laser marking〕，以簡化製程，因此，在 「第一次切割」步驟2之後，#开；六、 λ, ^ 」少外乙< 1瓦你^成—免用膠膜之晶圓背 该晶圓10之該主動表面U係形成有複數個切割線13，而在 該晶圓10之背面12係形成有複數個由雷射切割形成之溝槽 is ’該些溝槽15係對應於該些切割線13且不該些切 線1 3 〇 ，後’請參閱第5A圖’在「第二次切割」步驟3中， 其係在該晶圊10之背面12形成一膠膜6〇 15，以固定該晶圓10，接著復“二㈣ 放置於-晶圓切割設備〔圖未;;：閱 動表面11之該些切割線13作為切割定位點，利用曰：鑽石切 割刀70或其它切割工具切割該晶圓】〇之主動表面η ’，以形 ^複數個分離槽16，該些分離槽16係與上述之溝槽^為^ 、通，即藉由4「第二次切割」步驟3單體化分離；晶'、、圓 「：成為複數個黏著於該膠_之晶粒14，較佳地二 第二次切割」步驟3之分離槽丨6寬度係不小於 割之溝槽15寬度，而不需要刀具之不同切叼寬、声-人刀 防止h崩裂之功…該些分離之晶粒14係不會；崩；達到 〔chlpping〕之問題，並且在整個切割過程中， 膠膜60 ’有效簡化作業流程與降低晶圓耗用- 1262553 五、發明說明（6) 本發明之保護範圍當視後附之申請專利範圍所界定者 為準，任何熟知此項技藝者，在不脫離本發明之精神和範 圍内所作之任何變化與修改，均屬於本發明之保護範圍。Mi Page 10 1262553 V. Description of the Invention (5) In this embodiment, the depth of the cut is about two centimeters of the thickness of the wafer, one or less, to achieve the half-cutting effect of the adhesive film. Preferably, the laser marking is performed on the back surface 1 of the π β day SU 〇 to simplify the process. Therefore, after the "first cutting" step 2, #开;六, λ , ^ "less external B < 1 watt of you - the film of the free film back of the wafer 10 of the active surface U is formed with a plurality of cutting lines 13 on the back of the wafer 10 12 A plurality of trenches formed by laser cutting are formed. The trenches 15 correspond to the cutting lines 13 and the tangents 1 3 〇, and then 'see FIG. 5A' in the second cutting In step 3, a film 6〇15 is formed on the back surface 12 of the wafer 10 to fix the wafer 10, and then “two (four) is placed on the wafer cutting device [Fig. 1;; The cutting lines 13 of the surface 11 serve as cutting positioning points, and the active surface η is cut by a 曰: diamond cutting blade 70 or other cutting tool. The plurality of separation grooves 16 are formed in the form of a plurality of separation grooves 16 which are separated from the above-mentioned grooves, that is, by singulation and separation by the "second cutting" step 3; crystal ', and circle' : the width of the separation groove 6 which is adhered to the die 14 of the glue _, preferably the second dicing step 2 is not less than the width of the groove 15 without cutting the cutter. The sound-human knife prevents the cracking of h... The separated crystals 14 are not collapsed; the problem of [chlpping] is reached, and the film 60' effectively simplifies the process and reduces the wafer throughout the cutting process. USE - 1262553 V. INSTRUCTIONS (6) The scope of the present invention is defined by the scope of the appended claims, and any person skilled in the art, without departing from the spirit and scope of the invention, Changes and modifications are within the scope of the invention.
第12頁 1262553__ 圖式簡單說明 【圖式簡單說明】 第1圖：依本發明之晶圓切割方法之流程圖； 第2 圖：依本發明之晶圓切割方法，一提供之晶圓之正面 示意圖； 第3 圖：依本發明之晶圓切割方法，該晶圓之截面示意 圖； 第4 圖：依本發明之晶圓切割方法，在第一次切割步驟中 呂亥晶圓之截面不意圖， 第5 A圖··依本發明之晶圓切割方法，在第二次切割步驟中 該晶圓貼設於一膠膜之截面示意圖；及 第5B圖：依本發明之晶圓切割方法，在第二次切割步驟後 該晶圓切割為晶粒之截面不意圖。 元件符號簡單說明： 1 提供一晶圓 2 第一次切割 3 第二次切割 10 晶 圓 11 主 動表面 12 背面 13 切 割 線 14 晶 粒 15 溝槽 16 分 離 槽 20 凸 塊 30 框 架 31 開 40 雷 射 光 激 發 裝 置 50 攝 影 定 位 裝 置 60 膠 膜 70 鑽 石 切 割 刀Page 12 1262553__ Brief description of the drawing [Simple description of the drawing] Figure 1: Flow chart of the wafer cutting method according to the present invention; Figure 2: Wafer cutting method according to the present invention, the front side of the wafer provided Schematic diagram of the wafer cutting method according to the present invention, a cross-sectional view of the wafer; Figure 4: The wafer cutting method according to the present invention, the cross-section of the Luhai wafer is not intended in the first cutting step, 5A. According to the wafer cutting method of the present invention, a cross-sectional view of the wafer attached to a film in the second cutting step; and FIG. 5B: a wafer cutting method according to the present invention, The cross-section of the wafer after the secondary dicing step is not intended to be a cross section of the grain. A brief description of the component symbols: 1 Provide a wafer 2 First cut 3 Second cut 10 Wafer 11 Active surface 12 Back 13 Cutting line 14 Grain 15 Groove 16 Separation groove 20 Bump 30 Frame 31 Open 40 Laser light Excitation device 50 Photographic positioning device 60 Film 70 Diamond cutting knife
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