CN107026154B - 半导体结构及其形成方法 - Google Patents

半导体结构及其形成方法 Download PDF

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Publication number
CN107026154B
CN107026154B CN201611219635.6A CN201611219635A CN107026154B CN 107026154 B CN107026154 B CN 107026154B CN 201611219635 A CN201611219635 A CN 201611219635A CN 107026154 B CN107026154 B CN 107026154B
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sensor
substrate
semiconductor structure
dies
semiconductor
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CN107026154A (zh
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陈志华
陈玉芬
蔡豪益
刘重希
余振华
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

在一个实施例，半导体结构包括多芯片封装件系统(MCPS)。MCPS包括一个或多个管芯、沿着一个或多个管芯的侧壁延伸的模塑料、以及位于一个或多个管芯和模塑料上方的再分布层(RDL)。半导体结构还包括连接至RDL的至少一个传感器，RDL插入在至少一个传感器和一个或多个管芯之间。半导体结构还包括具有在衬底的第一侧上的导电部件的衬底。导电部件连接至RDL。衬底具有从衬底的第一侧延伸至衬底的与第一侧相对的第二侧的空腔，并且至少一个传感器设置在空腔中。本发明的实施例还涉及形成半导体结构的方法。

Description

半导体结构及其形成方法
技术领域
本发明的实施例涉及半导体结构及其形成方法。
背景技术
由于各种电子组件(例如，晶体管、二极管、电阻器、电容器等)的集成度不断提高，半导体工业已经经历了快速的发展。在大多数情况下，这种集成度的提高源自最小部件尺寸的反复减小(例如，将半导体工艺节点朝着亚20nm节点缩小)，这允许更多的部件集成在给定的区域内。近来随着对微型化、更高速度、更大带宽以及更低功耗和延迟的要求提高，也产生了对于半导体管芯的更小和更具创造性的封装技术的需要。
多芯片封装件(MCP)技术是由微型化和减小重量的电子工业的持续要求激励的新的封装技术。为了满足这些需求，引入包括单一封装件中的多个半导体芯片的MCP。各种三维MCP已经被开发，且特别地，已经引入新技术以用于芯片级集成而不是封装级集成。MCP技术具有简单的制造工艺和设计灵活性的益处。随着技术不断演进，正在开发MCP技术的新的改进和应用。
发明内容
本发明的实施例提供了一种半导体结构，包括：多芯片封装件系统(MCPS)包括：一个或多个管芯；沿着所述一个或多个管芯的侧壁延伸的模塑料；以及位于所述一个或多个管芯和所述模塑料上方的再分布层(RDL)，其中，所述再分布层电连接至所述一个或多个管芯；至少一个传感器，连接至所述多芯片封装件系统的所述再分布层，其中，所述再分布层插入在所述至少一个传感器和所述一个或多个管芯之间；以及衬底，具有位于所述衬底的第一侧上的第一多个导电部件，其中，所述第一多个导电部件连接至所述多芯片封装件系统的所述再分布层，其中，所述衬底包括从所述衬底的所述第一侧延伸至所述衬底的与所述第一侧相对的第二侧的空腔，其中，所述至少一个传感器设置在所述空腔中。
本发明的另一实施例提供了一种半导体结构，包括：显示器件；电池；衬底，具有面向所述电池和所述显示器件的第一侧以及与所述第一侧相对的第二侧，其中，所述衬底具有从所述第一侧延伸至所述第二侧的开口，其中，所述电池设置在所述衬底和所述显示器件之间；第一半导体封装件，设置在所述衬底和所述电池之间，其中，所述第一半导体封装件横跨所述衬底的所述开口延伸，其中，所述第一半导体封装件的第一侧连接至所述衬底的所述第一侧；以及传感器，连接至所述第一半导体封装件的所述第一侧，其中，所述传感器设置在所述衬底的所述开口中。
本发明的又一实施例提供了一种形成半导体结构的方法，所述方法包括：将多个管芯附接至载体；在所述多个管芯的邻近的管芯之间形成模塑料；在所述多个芯片和所述模塑料上方形成再分布结构，所述再分布结构电连接至所述多个管芯；将所述载体与所述多个管芯分离；将至少一个传感器附接至所述再分布结构；以及将衬底附接至所述再分布结构，所述衬底具有通孔，所述至少一个传感器设置在所述通孔中。
附图说明
当结合附图进行阅读时，根据下面详细的描述可以更好地理解本发明的实施例。应该强调的是，根据工业中的标准实践，对各种部件没有按比例绘制并且仅仅用于说明的目的。实际上，为了清楚的讨论，各种部件的尺寸可以被任意增大或缩小。
图1至图6示出了根据一些实施例的在制造工艺的各个阶段的半导体结构的截面图。
图7示出了根据各个实施例的半导体结构的截面图。
图8示出了根据一些实施例的用于制造半导体结构的方法的流程图。
图9示出了根据一些实施例的具有MCP封装件的系统的顶视图。
具体实施方式
以下公开内容提供了许多用于实现所提供主题的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然，这些仅仅是实例，而不旨在限制本发明。例如，在以下描述中，在第二部件上方或者上形成第一部件可以包括第一部件和第二部件形成为直接接触的实施例，并且也可以包括在第一部件和第二部件之间可以形成额外的部件，从而使得第一部件和第二部件可以不直接接触的实施例。此外，本发明可在各个实例中重复参考标号和/或字母。该重复是为了简单和清楚的目的，并且其本身不指示所讨论的各个实施例和/或配置之间的关系。
而且，为便于描述，在此可以使用诸如“在…之下”、“在…下方”、“下部”、“在…之上”、“上部”等的空间相对术语，以便于描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中所示的方位外，空间相对术语旨在包括器件在使用或操作中的不同方位。装置可以以其他方式定向(旋转90度或在其他方位上)，而在此使用的空间相对描述符可以同样地作相应的解释。
关于特定内容，即，用于具有MCP封装件的系统的方法和结构描述各个实施例。各个实施例包括通过将多个半导体管芯集成在一起且在半导体管芯上方形成再分布层(RDL)形成MCP封装件。在各个实施例中，传感器通过在RDL上方形成的凸块下金属(UBM)结构或UBM连接至RDL，并且具有空腔的衬底附接至MCP封装件，在空腔中设置传感器。
图1至图6示出了根据一些实施例的在制造工艺的不同阶段处的半导体结构500的截面图。
首先参照图1，多个半导体管芯105或半导体芯片105附接至载体101。多个半导体管芯105可以是相同或相似的类型(例如，执行相同或相似的功能)。可选地，半导体管芯105可以是不同的类型。例如，一个半导体管芯105可以是存储芯片，另一半导体管芯105可以是逻辑芯片，而另一半导体管芯105可以是数字信号处理器(DSP)。尽管图1示出了三个半导体管芯105，在MCP封装件中可以使用多于或少于三个半导体管芯，并且半导体管芯105可以是任何合适类型的半导体管芯。根据一些实施例，载体101包括玻璃、硅、诸如块状硅的块状材料、聚合物、聚合物复合物、金属箔、陶瓷、玻璃、玻璃环氧树脂、氧化铍、胶带、或用于结构支撑的其它合适的材料。在图1的实例中，半导体管芯105通过诸如管芯附接膜(DAF)的膜103附接至载体101。因此，在下文中，膜103可称为DAF 103，应该理解，其它类似的膜也可用于将管芯105附接至载体101。粘合层102可以沉积或层压在载体101上方。在一些实施例中，载体101是由玻璃制成的，粘合层102是感光的且在随后的载体分离工艺中通过对载体101闪烁紫外(UV)光很容易从载体101分离。例如，粘合层可以是由圣保罗,明尼苏达州的3M公司制造的光热转换(LTHC)涂层。可选地，粘合层102可包括诸如胶的其它材料。
参照图1，在一些实施例中，半导体管芯105附接至载体101，而半导体管芯105的具有导电部件109(例如，通孔109或凸块109)的侧面向远离载体101。根据一些实施例，导电部件109提供至半导体管芯105的内部电路的电连接。导电部件109可以嵌入在绝缘层111中。在一些实施例中，绝缘层111包括聚酰亚胺(PI)、聚苯并恶唑(PBO)等。绝缘层111可用作应力减轻涂层和/或保护层，且可在下文讨论的随后工艺(例如，研磨工艺)中保护管芯105。
仍然参照图1，在半导体管芯105和载体101上方形成模塑料107。模塑料107可包括环氧树脂、模制底部填充物等，且可通过压缩模制、转移模制和液态密封剂模制或任何其它合适的方法形成。在形成模塑料107之后，可以执行诸如化学机械平坦化(CMP)工艺的平坦化工艺或研磨工艺以去除管芯105上方多余的模塑料107并且为模塑料107产生平坦的上表面107u。当暴露出导电部件109的顶面时平坦化工艺可以停止，以使模塑料107的上表面107u与半导体管芯105的上表面共平面。
接下来，如图2所示，在半导体管芯105和模塑料107的上表面107u上方形成再分布层(RDL)120。在一些实施例中，RDL 120包括在一个或多个绝缘层中形成的一个或多个导电层(例如，导线和/或通孔)，其中，导电层电连接至半导体管芯105且重新路由电信号以为与其他电组件的连接提供通路。例如，RDL 120可横向延伸超过半导体管芯150的周界以提供扇出互连结构。下文中，RDL 120可共同地称为再分布层(RDL)或再分布结构。如下文更详细地描述，RDL 120包括一个或多个绝缘层(例如，绝缘层121和122)以及在一个或多个绝缘层内设置的一个或多个导电部件(例如，导电部件123)。在一些实施例中，第一绝缘层121可包括可光图案化绝缘材料，诸如聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)等、或它们的组合。在其它实施例中，第一绝缘层121可以包括非可光图案化绝缘材料(诸如氮化硅、碳化硅、氧化硅、氮氧化硅)、低k电介质(诸如碳掺杂的氧化物)、极低k电介质(诸如多孔碳掺杂的二氧化硅)等或它们的组合。可以通过CVD、PVD、ALD、旋涂电介质工艺等或它们的组合形成第一绝缘层121。
在一些实施例中，还参照图2，例如，使用光刻技术，在第一绝缘层121中形成开口(未示出)以暴露出导电通孔或凸块109。在第一绝缘层121上方和在开口中形成导电图案123。在一些实施例中，导电图案123接触导电通孔/凸块109。导电图案123可包括各种线/迹线(横跨第一绝缘层121的顶面“水平地”行进)和/或通孔(“垂直地”延伸至第一绝缘层121中的开口内且接触下面的导电通孔/凸块109)。如图2中所示，导电图案123延伸超过半导体管芯105的边界以提供扇出互连结构。在一些实施例中，导电图案123通过在第一绝缘层121上方和开口中沉积晶种层(未示出)形成。晶种层可以包括铜、钛、镍、金、锰等或它们的组合，并且可以通过ALD、溅射、PVD工艺等或它们的组合来形成。随后地，光刻胶材料(未示出)沉积在晶种层上方并且被图案化以限定用于导电图案123的期望的图案。通过电化学镀工艺、化学镀工艺、ALD、PVD等或它们的组合在晶种层上形成诸如铜、钨、铝、银、金等或它们的组合的导电材料。使用诸如灰化工艺和之后的湿清洗工艺的适当的光刻胶去除工艺去除光刻胶材料。例如，使用湿蚀刻或干蚀刻去除晶种层的位于第一绝缘层121上方的暴露部分。
还参照图2，在第一绝缘层121和导电图案123上方形成第二绝缘层122，这完成了RDL 120的形成。在示出的实施例中，第二绝缘层122与第一绝缘层121相似，可使用相似的方法形成，且描述不在此赘述。上述用于绝缘层121和导电图案123的形成方法可以重复以形成额外的绝缘层和导电图案。如图2所示，RDL 120包括两个绝缘层(诸如第一绝缘层121和第二绝缘层122)和插入在绝缘层之间的一个导电图案(诸如导电图案123)。本领域的普通技术人员将意识到，仅是为了说明的目的而提供绝缘层的数量和导电图案的数量，而不是对于本发明的范围的限制。在其它实施例中，取决于半导体结构500的设计要求，RDL 120可包括其他数量的绝缘层和导电图案。
还参照图2，UBM 127(例如，127a和127b)形成在RDL 120上方并且电连接至RDL120。根据本发明的一些实施例，每个UBM 127包括阻挡层125和阻挡层上方的金属层。在一些实施例中，使用光刻技术，开口(未示出)形成在RDL 120的顶部绝缘层中(例如，图2的第二绝缘层122)以暴露出RDL 120的导电图案(例如，图2的导电图案123)。随后地，阻挡层125形成在顶部绝缘层上方，其中，阻挡层延伸至开口中且接触顶部导电图案。阻挡层可以是钛层、氮化钛层、钽层、氮化钽层、或由钛合金或钽合金形成的层，并且可以通过ALD、溅射、PVD等、或它们的组合形成。
如图2所示，例如，通过电化学镀工艺、化学镀工艺、ALD、PVD或其它合适的方法在阻挡层125上方形成诸如铜、铝、钨、银、金等的金属以完成UBM 127(例如，127a和127b)。UBM127可以或可以不连接至半导体管芯105。如图2所示，一些UBM(例如，UBM 127a)形成在把半导体管芯105的边界内，而其它UBM(例如，UBM 127b)形成在半导体管芯105的边界外侧。
接下来，如图3所示，具有UBM 127的半导体结构500的侧附接至由框架131支撑的膜133。随后地，在一些实施例中，载体101通过分离工艺被去除。在粘合层102是LTHC涂层的实施例中，可以通过穿过载体101闪烁例如紫外(UV)光的光源来分离载体101。作为实例，在其他实施例中，载体101可以通过机械剥离、CMP、机械研磨、化学湿蚀刻或湿剥离分离。在一些实施例中，在分离工艺之后，DAF 103通过DAF清洗工艺(在图3中未示出)去除。在其他实施例中，DAF 103保留在半导体结构500上，并且不执行DAF清洗工艺。在分离工艺之后，图3中示出的半导体结构500(不包括框架131和膜133)在本文中可以称为多芯片封装件(MCP)系统550或MCPS 550(见图3中的标记)。MCPS 550可以或可以不包括在随后工艺步骤中剥离的DAF 103。
参照图4，在图3中形成的半导体结构500从膜133分离且附接至由框架131’支撑的膜133’，RDL 120远离膜133’延伸。框架131’和膜133’可以或可以不与图3中示出的框架131和膜133相同。在一些实施例中，执行激光标记工艺以在半导体结构500的与具有RDL 120的第二侧相对的第一侧上形成激光标记(未示出)。可以使用来自激光器件143的激光束145执行激光标记工艺，激光束烧毁和/或去除半导体结构500的第一侧上的胶带133’和顶部介电层的部分。激光标记可包括字母、数字、图、或可用于识别目的的任何其它符号。例如，激光标记可用于识别产品、制造序列、相应封装件的批号、或用于追踪相应封装件的任何其它信息。可以可选地在图3中示出的载体分离工艺之后执行激光标记工艺。因此，MCPS 550还可包括激光标记。在一些实施例中，接下来，例如，使用焊料印刷机器或丝网印刷工艺在UBM127上形成焊膏129。
接下来，如图5所示，电组件141附接至半导体结构500的UBM 127a。电组件141可以是例如传感器或半导体管芯。第一电组件141可以具有与第二电组件141不同的类型，尽管第一电组件141还可具有与第二电组件141相同的类型。在示例性实施例中，电组件141是传感器。每个传感器141可以是，例如，温度传感器、湿度传感器、心率传感器、发光二极管(LED)传感器、或环境传感器。作为实例，LED传感器可以例如在诸如脉搏血氧计或智能手表的应用中用于测量血氧水平。温度传感器和湿度传感器可以用于测量用户的(例如，人类用户)身体温度和皮肤湿度。环境传感器可以用于测量周围环境，诸如气压、温度、湿度、UV光、毒气浓度、和/或其它参数。在下文讨论中，电组件141可以称为传感器141，应该理解，还可使用诸如半导体管芯、半导体封装件(例如，具有封装件的管芯)的其它电组件。尽管图5示出了两个传感器141、一个传感器或两个以上传感器还可附接至半导体结构500。在一些实施例中，传感器141可具有相同的尺寸。在其他实施例中，传感器141可具有不同的尺寸(例如，图6中的高度t2和t3)。
根据一些实施例，参照图5，传感器141的接触焊盘143与半导体结构500的相应的UBM 127a对准，且执行回流工艺以将传感器141物理地和电连接至半导体结构500。传感器141可使用表面安装技术(SMT)附接至UBM 127a。例如，传感器141可以放置在半导体结构500上且通过焊膏129暂时地保持在合适的位置。诸如红外灯和热风的热源可以用于熔化焊膏129且在传感器141的接触焊盘143和半导体结构500的UBM 127a之间形成连接件139。在一些实施例中，在回流焊炉中执行回流工艺。
图5示出了具有为了说明目的附接的传感器141的的一个MCPS 550的半导体结构500。然而，具有相应附接的传感器141的数十、数百、或更多的MCPS 550可以通过图1至图5中示出的处理步骤同时地形成在半导体结构500中。在一些实施例中，随后执行切割工艺(未示出)以分离、或切割半导体结构500以形成多个单独的MCPS 550。作为实例，可使用切割刀片或激光执行切割。在切割之后，可通过例如从MCPS 550剥离去除DAF 103。
根据一些实施例，参照图6，MCPS 550的UBM 127b与工件151的第一侧上的相应的导电部件153对准，且执行接合工艺(例如，回流工艺)以将工件151与MCPS 550物理地和电接合。在一些实施例中，在接合工艺之后，连接件139形成在工件151的导电部件153和MCPS550的UBM127b之间。工件151可以是，例如，印刷电路板(PCB)、插入件、或任何其它合适的衬底。工件151在第一侧上可以具有诸如接触焊盘或凸面的导电部件153，其中，导电部件153可电连接至在工件151中形成的其它导电部件155(例如，导线、导电通孔)。在示例性实施例中，工件151是具有从PCB 151的第一侧延伸至PCB 151的与第一侧相对的第二侧的开口或空腔150。在一些实施例汇总，开口150的尺寸足够大以容纳传感器141。在各个实施例中，PCB 151的开口150被设置为使得当MCPS 550和PCB 151接合在一起时，传感器141设置在开口中。如图6所示，传感器141的高度(例如，高度t2)可以等于或小于PCB 151的高度(例如，高度t1)。可选地，传感器141的高度(例如，高度t3)可大于PCB 151的高度(例如，高度t1)，因此传感器141的顶部可在PCB 151的上表面之上突出。在设计阶段期间，开口150可设计在PCB 151中，以使当制造PCB151时，准备好开口150。可选地，可在通过使用例如刀片、激光、或钻孔工具去除PCB 151的对应于传感器141的位置的期望部分来制作PCB 151之后，形成开口150。如图6中所示，开口150可具有倾斜的侧壁159。在一些实施例中，开口150的宽度从具有导电部件153的PCB 151的第一侧至PCB 151的与第一侧相对的第二侧逐渐增加。在实施例中，倾斜的侧壁159在PCB 151的第二侧下方终止且与直的侧壁157相交,其中，直的侧壁157基本上垂直于PCB 151的第二侧且延伸至PCB 151的第二侧。通过在空腔150中设置传感器141，与具有附接至工件151的第二侧的传感器141的半导体结构相比，有利地减小了半导体结构500的总高度。
图7示出了另一实施例半导体结构400。图7中的半导体结构400包括具有通过连接件417附接至MCPS 413的传感器423的MCPS 413。与以上参照图5所述的连接件139的形成相似，可通过例如将MCPS 413的UBM(未示出)与传感器423的接触焊盘(未示出)接合形成连接件417。作为实例，传感器423可以是温度传感器、湿度传感器、心率传感器、LED传感器、或环境传感器。尽管在图7中示出一个传感器423，但是可使用两个或多个传感器423。MCPS 413可具有与图5和图6中所示的MCPS 550相同或相似的结构。在一些实施例中，工件425(例如，PCB)的第一侧通过连接件417接合至MCPS 413。工件425具有开口或通孔，其中设置传感器423。如图7所示，MCPS 413、传感器423和工件425的组合与图6中的半导体结构500基本上相同或相似。
在各种实施例中，除了MCPS 413，其它电组件415a和415b也通过连接件417附接至工件425的第一侧。电组件415a和415b可以彼此相似或不同。作为实例，电组件415a可以是半导体管芯或半导体封装件，且电组件415b可以是离散的电组件，例如，无源或有源器件，诸如电容器、电感器、电阻器、晶体管、二极管等。本领域的技术人员应该理解，图7仅仅是一个示例，在半导体结构400中可使用其它数量的MCPS 413、传感器423和电组件415a/415b，而不背离本发明的精神。
如图7所示，电池411通过线缆419电连接至工件425，而MCPS 413设置在电池411和工件425之间。在一些实施例中，线缆419是柔性线缆，诸如柔性印刷电路(FPC)线缆。诸如LCD显示器件的显示器件409靠近电池411设置，电池411设置在MCPS 413和显示器件409之间。在一些实施例中，显示器件409通过诸如FPC线缆的线缆421电连接至工件425。
根据一些实施例，参照图7，半导体结构400具有外壳401。在各个实施例中，外壳401具有正面403和背面405，正面403靠近显示器件409且背面405靠近传感器423和工件425。在一些实施例中，半导体结构400包括可穿戴器件，诸如智能手表、健身器或健康监控器件。传感器423可感测或测量用户的特定的重要统计资料(例如，人穿戴可穿戴器件)，因此外壳401的背面405可接触或接近用户的皮肤。在一些实施例中，传感器423上方的背面405或背面405的部分407由有利于传感器423的感测和测量需要的第一材料制成。例如，第一材料可允许特定波长的光穿过(例如，对于LED传感器测量)或可导热(例如，对于温度传感器测量)。第一材料可拥有物理、电、或其它类型的特征以满足半导体结构400的多个传感器的感测需要。如图7所示，背面405可包括具有大于或等于传感器423的宽度w1的宽度w2的部分407，尽管w2也可以小于w1(未示出)。在一个实施例中，背面405的部分407形成测量窗口且由不同于背面405的其它部分的材料制成。
如图7所示，外壳401的正面403邻近显示器件409。在一些实施例中，正面403的第二材料是透明的以使显示器件409的显示是用户看得见的。例如，玻璃、石英或其它合适的材料可用作正面403的第二材料。在一些实施例中，第二材料可与第一材料相同。在其它实施例中，第二材料包括合适的材料以支撑显示器件409的触摸屏操作。在又另一实施例中，正面403具有开口以暴露出显示器件409，以使用户能够直接与显示器件409交互(例如，使用手指或诸如铁笔的输入设备)。在一些实施例中，外壳401的不同部分(例如，正面403、背面405)包括不同的材料。在其它实施例中，外壳401的不同部分是由相同材料制成的。
图8是根据一些实施例的制造半导体结构的方法的流程图。应该理解，图8中示出的实施例方法是许多可能的实施例方法的实例。本领域中的技术人员应当认识到许多变化、替换和修改。例如，可以添加、去除、替换、重新排列和重复图8中示出的各个步骤。
参照图8。在步骤1010中，多个管芯附接至载体。在步骤1020中，模塑料形成在多个管芯的邻近的管芯之间。在步骤1030中，再分布结构形成在多个管芯和模塑料上方。再分布结构电连接至多个半导体管芯。在步骤1040中，载体与多个管芯分离。在步骤1050中，至少一个传感器附接至再分布结构。至少一个传感器可通过连接至再分布结构的UBM附接至再分布结构。在步骤1060中，衬底附接至再分布结构。衬底具有通孔，且至少一个传感器设置在通孔中。衬底可通过连接至再分布结构的UBM附接至再分布结构。
实施例系统和方法的益处包括集成度更高、MCP封装件面积减小以及半导体结构的高度减小。例如，通过在工件(例如，工件151或425)的空腔中设置传感器(例如，传感器141或传感器423)，容纳传感器141或423所需的半导体结构的总高度减小。在图7的实例中，容纳传感器423所需的高度减小意味着在外壳401内可获得更多空间以用于其他目的，诸如更多空间以用于更大的电池411、或更多的空间以用于其它电组件和/或另一工件以容纳更多功能。如另一实例，通过在MCP封装件中集成半导体管芯而不是半导体封装件，MCP封装件的尺寸(例如，面积)小于由所有相应的半导体封装件占据的面积，如下面参照图9的描述示出的。
图9示出了实施例半导体结构300的顶视图。如图9所示，多个裸半导体管芯(例如，管芯307、309、311和313)在MCPS中集成在一起，且传感器(例如，虚线中示出的传感器203和205)遵循与图1至图5中示出的相似的步骤附接至MCPS。在图9的实例中，具有传感器的半导体结构300的侧面向纸内侧，因此传感器203/205和UBM 320以虚线示出，而UBM 320围绕半导体结构300的周界形成。一些UBM 320可形成在半导体结构300的中间部分，但为了简单，未在图9中示出。作为实例，多个半导体管芯可包括模拟前端(AFE)管芯307、连接管芯311(例如，WiFi/BlueTooth模块)、功率管芯集成电路(PMIC)309、以及微控制器单元(MCU)313。两个传感器203和205通过PCB 301的开口(例如，未示出，类似于图6的开口)附接至半导体结构300的UBM 320(未示出)，因此在图9中以虚线示出。作为实例，传感器203可以是LED/二极管传感器，并且传感器205可以是温度/湿度传感器。在上面图9中示出的实例中，由于裸管芯而不是半导体封装件在MCPS中集成在一起，半导体结构300的总面积(例如，PCB 301的面积)远远小于集成相应的半导体封装件的方案。例如，使用图9中示出的实施例系统已经观察到PCB面积减小65％。此外，通过在PCB 301的开口中放置传感器，有利地减小半导体结构300的总厚度。
根据一个实施例，半导体结构包括多芯片封装件系统(MCPS)。MCPS包括一个或多个管芯、沿着一个或多个管芯的侧壁延伸的模塑料、以及位于一个或多个管芯和模塑料上方的再分布层(RDL)，RDL电连接至一个或多个管芯。半导体结构还包括连接至MCPS的RDL的至少一个传感器，RDL插入在至少一个传感器和一个或多个管芯之间，以及具有在衬底的第一侧上的第一多个导电部件的衬底。第一多个导电部件连接至MCPS的RDL。衬底包括从衬底的第一侧延伸至衬底的与第一侧相对的第二侧的空腔，并且至少一个传感器设置在空腔中。
在上述半导体结构中，其中，所述再分布层横向地延伸超过所述一个或多个管芯的边界。
在上述半导体结构中，其中，所述至少一个传感器包括心率传感器、温度传感器、湿度传感器、LED传感器或环境传感器。
在上述半导体结构中，其中，所述多芯片封装件系统还包括位于所述再分布层上的多个凸块下金属结构(UBM)，其中，所述至少一个传感器通过相应的凸块下金属结构连接至所述再分布层。
在上述半导体结构中，其中，所述至少一个传感器包括第一传感器，其中，所述衬底的第一厚度大于或等于所述第一传感器的第二厚度。
在上述半导体结构中，其中，所述至少一个传感器包括第一传感器，其中，所述衬底的第一厚度小于所述第一传感器的第二厚度。
在上述半导体结构中，其中，所述衬底是印刷电路板(PCB)。
在上述半导体结构中，还包括连接至所述衬底的显示器件，其中，所述多芯片封装件系统设置在所述显示器件和所述衬底之间。
在上述半导体结构中，还包括连接至所述衬底的显示器件，其中，所述多芯片封装件系统设置在所述显示器件和所述衬底之间，还包括设置在所述显示器件和所述多芯片封装件系统之间的电池。
在其他实施例中，半导体结构包括显示器件、电池、具有面向电池和显示器件的第一侧和与第一侧相对的第二侧的衬底。衬底具有从第一侧延伸至第二侧的开口。电池设置在衬底与显示器件之间。半导体结构还包括设置在衬底和电池之间的第一半导体封装件。第一半导体封装件横跨衬底的开口延伸，且第一半导体封装件的第一侧连接至衬底的第一侧。半导体结构还包括连接至第一半导体封装件的第一侧的传感器。传感器设置在衬底的开口中。
在上述半导体结构中，还包括：第一柔性线缆，将所述显示器件连接至所述衬底；以及第二柔性线缆，将所述电池连接至所述衬底。
在上述半导体结构中，还包括：第二半导体封装件，设置在所述衬底和所述电池之间，所述第二半导体封装件连接至所述衬底的所述第一侧。
在上述半导体结构中，其中，所述传感器是心率传感器、温度传感器、湿度传感器、LED传感器、环境传感器或它们的组合。
在上述半导体结构中，其中，所述第一半导体封装件还包括：多个半导体芯片；模塑料，位于所述多个半导体芯片之间；以及再分布层(RDL)，在所述多个半导体芯片和所述模塑料上方，其中，所述再分布层电连接至所述多个半导体芯片。
在上述半导体结构中，还包括外壳，其中，所述显示器件、所述电池、所述衬底、所述第一半导体封装件和所述传感器封闭在所述外壳中。
在上述半导体结构中，还包括连接至所述衬底的所述第一侧的离散的电组件。
在又其它实施例中，一种形成半导体结构的方法包括：将多个管芯附接至载体，在多个管芯的邻近管芯之间形成模塑料，以及在多个管芯和模塑料上方形成再分布结构，再分布结构电连接至多个管芯。该方法还包括将载体从多个管芯分离，将至少一个传感器附接至再分布结构，以及将衬底附接至再分布结构，衬底具有通孔，至少一个传感器设置在通孔中。
在上述方法中，还包括：在形成所述模塑料之后，执行平坦化工艺以去除多余的模塑料以使所述多个管芯的表面与所述模塑料的表面齐平。
在上述方法中，还包括在形成所述再分布结构之后，在所述再分布结构的顶部绝缘层中形成开口，所述开口暴露所述再分布结构的导电部件；在所述顶部绝缘层上方形成阻挡层，所述阻挡层延伸至所述开口内且接触所述再分布结构的所述导电部件；以及在所述阻挡层上方形成金属层，从而形成凸块下金属结构。
在上述方法中，还包括：将电组件附接至所述衬底的面向所述多个管芯的第一侧。
上面概述了若干实施例的部件、使得本领域技术人员可以更好地理解本发明的方面。本领域技术人员应该理解，他们可以容易地使用本发明作为基础来设计或修改用于实现与在此所介绍实施例相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围、并且在不背离本发明的精神和范围的情况下，在此他们可以做出多种变化、替换以及改变。

Claims (31)

1.一种半导体结构，包括：
第一多芯片封装件系统包括：
一个或多个管芯；
沿着所述一个或多个管芯的侧壁延伸的模塑料；以及
位于所述一个或多个管芯和所述模塑料上方的再分布层(RDL)，其中，所述再分布层电连接至所述一个或多个管芯；
至少一个传感器，连接至所述第一多芯片封装件系统的所述再分布层，其中，所述再分布层插入在所述至少一个传感器和所述一个或多个管芯之间；以及
衬底，具有位于所述衬底的第一侧上的第一多个导电部件，其中，所述第一多个导电部件连接至所述第一多芯片封装件系统的所述再分布层，其中，所述衬底包括从所述衬底的所述第一侧延伸至所述衬底的与所述第一侧相对的第二侧的空腔，其中，所述至少一个传感器设置在所述空腔中；以及
电池，连接至所述衬底，所述第一多芯片封装件系统设置在所述衬底和所述电池之间。
2.根据权利要求1所述的半导体结构，其中，所述再分布层横向地延伸超过所述一个或多个管芯的边界。
3.根据权利要求1所述的半导体结构，其中，所述至少一个传感器包括心率传感器、温度传感器、湿度传感器、LED传感器或环境传感器。
4.根据权利要求1所述的半导体结构，其中，所述第一多芯片封装件系统还包括位于所述再分布层上的多个凸块下金属结构(UBM)，其中，所述至少一个传感器通过相应的凸块下金属结构连接至所述再分布层。
5.根据权利要求1所述的半导体结构，其中，所述至少一个传感器包括第一传感器，其中，所述衬底的第一厚度大于或等于所述第一传感器的第二厚度。
6.根据权利要求1所述的半导体结构，其中，所述至少一个传感器包括第一传感器，其中，所述衬底的第一厚度小于所述第一传感器的第二厚度。
7.根据权利要求1所述的半导体结构，其中，所述衬底是印刷电路板(PCB)。
8.根据权利要求1所述的半导体结构，还包括连接至所述衬底的显示器件，其中，所述第一多芯片封装件系统设置在所述显示器件和所述衬底之间。
9.根据权利要求8所述的半导体结构，其中，所述电池设置在所述显示器件和所述第一多芯片封装件系统之间。
10.根据权利要求9所述的半导体结构，还包括：
第一柔性线缆，将所述显示器件电连接至所述衬底；以及
第二柔性线缆，将所述电池电连接至所述衬底。
11.根据权利要求9所述的半导体结构，其中，所述半导体结构还包括位于所述衬底和所述电池之间的第二多芯片封装件系统，所述第二多芯片封装件系统电连接至所述衬底的第一侧。
12.根据权利要求11所述的半导体结构，还包括外壳，其中，所述显示器件、所述电池、所述衬底、所述第一多芯片封装件系统、所述第二多芯片封装件系统和所述传感器封闭在所述外壳中。
13.根据权利要求12所述的半导体结构，其中，所述显示器件邻近所述外壳的第一侧，并且所述传感器邻近所述外壳的与所述外壳的第一侧相对的第二侧，其中，在所述外壳的第二侧上存在测量窗口，所述测量窗口位于所述传感器的正上方。
14.根据权利要求13所述的半导体结构，其中，所述外壳的第一侧和所述外壳的第二侧包括不同材料。
15.根据权利要求13所述的半导体结构，其中，所述外壳的第一侧具有在所述显示器件上方的显示窗口。
16.一种半导体结构，包括：
显示器件；
电池；
衬底，具有面向所述电池和所述显示器件的第一侧以及与所述第一侧相对的第二侧，其中，所述衬底具有从所述第一侧延伸至所述第二侧的开口，其中，所述电池设置在所述衬底和所述显示器件之间；
第一半导体封装件，设置在所述衬底和所述电池之间，其中，所述第一半导体封装件横跨所述衬底的所述开口延伸，其中，所述第一半导体封装件的第一侧连接至所述衬底的所述第一侧；以及
传感器，连接至所述第一半导体封装件的所述第一侧，其中，所述传感器设置在所述衬底的所述开口中。
17.根据权利要求16所述的半导体结构，还包括：
第一柔性线缆，将所述显示器件连接至所述衬底；以及
第二柔性线缆，将所述电池连接至所述衬底。
18.根据权利要求16所述的半导体结构，还包括：
第二半导体封装件，设置在所述衬底和所述电池之间，所述第二半导体封装件连接至所述衬底的所述第一侧。
19.根据权利要求16所述的半导体结构，其中，所述传感器是心率传感器、温度传感器、湿度传感器、LED传感器、环境传感器或它们的组合。
20.根据权利要求16所述的半导体结构，其中，所述第一半导体封装件还包括：
多个半导体芯片；
模塑料，位于所述多个半导体芯片之间；以及
再分布层(RDL)，在所述多个半导体芯片和所述模塑料上方，其中，所述再分布层电连接至所述多个半导体芯片。
21.根据权利要求16所述的半导体结构，还包括外壳，其中，所述显示器件、所述电池、所述衬底、所述第一半导体封装件和所述传感器封闭在所述外壳中。
22.根据权利要求16所述的半导体结构，还包括连接至所述衬底的所述第一侧的离散的电组件。
23.一种形成半导体结构的方法，所述方法包括：
将多个管芯附接至载体；
在所述多个管芯的邻近的管芯之间形成模塑料；
在所述多个管芯和所述模塑料上方形成再分布结构，所述再分布结构电连接至所述多个管芯；
将所述载体与所述多个管芯分离；
将至少一个传感器附接至所述再分布结构；以及
将衬底附接至所述再分布结构，所述衬底具有通孔，所述至少一个传感器设置在所述通孔中；以及
将所述衬底连接至电池，所述多个管芯设置在所述衬底和所述电池之间。
24.根据权利要求23所述的方法，还包括：
在形成所述模塑料之后，执行平坦化工艺以去除多余的模塑料以使所述多个管芯的表面与所述模塑料的表面齐平。
25.根据权利要求23所述的方法，还包括在形成所述再分布结构之后，
在所述再分布结构的顶部绝缘层中形成开口，所述开口暴露所述再分布结构的导电部件；
在所述顶部绝缘层上方形成阻挡层，所述阻挡层延伸至所述开口内且接触所述再分布结构的所述导电部件；以及
在所述阻挡层上方形成金属层，从而形成凸块下金属结构。
26.根据权利要求23所述的方法，还包括：
将电组件附接至所述衬底的面向所述多个管芯的第一侧。
27.一种半导体结构，包括：
衬底，具有第一侧以及与所述第一侧相对的第二侧，所述衬底具有位于所述第一侧上的第一导电部件，所述衬底具有从所述第一侧延伸至所述第二侧的开口；
传感器，位于所述衬底的开口中；以及
第一多芯片封装件系统(MCPS)，位于所述衬底的第一侧上，所述第一多芯片封装件系统包括：
位于模塑料层上方的再分布层(RDL)；以及
嵌入所述模塑料层中并且电连接至所述再分布层的一个或多个管芯；
其中，所述第一多芯片封装件系统的再分布层电连接至所述传感器和所述衬底的第一导电部件；以及
电池，连接至所述衬底，所述第一多芯片封装件系统设置在所述衬底和所述电池之间。
28.根据权利要求27所述的半导体结构，还包括在所述衬底的开口中的第二传感器，其中，所述第二传感器电连接至所述第一多芯片封装件系统的再分布层。
29.根据权利要求28所述的半导体结构，还包括第二多芯片封装件系统，位于所述衬底的第一侧上并且电连接至所述衬底的第一侧上的第二导电部件。
30.一种半导体结构，包括：
工件，具有从所述工件的第一侧延伸至所述工件的与所述第一侧相对的第二侧的开口，所述工件具有位于所述第一侧上的第一导电部件；
第一多芯片封装件系统(MCPS)，位于所述工件的第一侧上，所述第一多芯片封装件系统包括：
位于模塑料层上方的再分布层(RDL)；
嵌入所述模塑料层中并且电连接至所述再分布层的一个或多个管芯，其中所述再分布层电连接至所述工件的第一导电部件；以及
电连接至所述第一多芯片封装件系统的再分布层的第一传感器，其中，所述第一传感器设置在所述工件的开口中，其中所述第一传感器为心率传感器、温度传感器、湿度传感器、LED传感器、环境传感器或它们的组合；以及
外壳，所述工件、所述第一传感器和所述第一多芯片封装件系统封闭在所述外壳中，所述第一传感器邻近所述外壳的一侧。
31.根据权利要求30所述的半导体结构，还包括电连接至所述第一多芯片封装件系统的再分布层的第二传感器，所述第二传感器设置在所述工件的开口中，其中，沿从所述工件的第一侧到所述工件的第二侧的第一方向测得的所述第二传感器的高度，不同于沿所述第一方向测得的所述第一传感器的高度。
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