CN106960901B - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN106960901B
CN106960901B CN201611269825.9A CN201611269825A CN106960901B CN 106960901 B CN106960901 B CN 106960901B CN 201611269825 A CN201611269825 A CN 201611269825A CN 106960901 B CN106960901 B CN 106960901B
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China
Prior art keywords
light
light emitting
emitting device
reflective layer
layer
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English (en)
Chinese (zh)
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CN106960901A (zh
Inventor
刘建良
许明祺
廖世安
刘俊宏
叶志庭
叶昶腾
陈柏璋
邱圣哲
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Epistar Corp
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Epistar Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/814Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0068Arrangements of plural sources, e.g. multi-colour light sources
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073Light emitting diode [LED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates

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CN201611269825.9A 2015-12-31 2016-12-30 发光装置 Active CN106960901B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910909540.4A CN110649142B (zh) 2015-12-31 2016-12-30 发光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW104144679 2015-12-31
TW104144679 2015-12-31
TW105126557 2016-08-19
TW105126557 2016-08-19

Related Child Applications (1)

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CN106960901A CN106960901A (zh) 2017-07-18
CN106960901B true CN106960901B (zh) 2021-10-15

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Country Status (6)

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US (2) US10205070B2 (enExample)
EP (1) EP3188263B1 (enExample)
JP (1) JP7266961B2 (enExample)
KR (1) KR102396074B1 (enExample)
CN (2) CN106960901B (enExample)
TW (2) TWI731394B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6665731B2 (ja) * 2016-08-22 2020-03-13 豊田合成株式会社 発光装置及びその製造方法
US10680147B2 (en) * 2017-11-24 2020-06-09 Osram Oled Gmbh Method of producing a lighting device
WO2019106846A1 (ja) * 2017-12-01 2019-06-06 日立化成株式会社 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム
US11335842B2 (en) * 2018-02-14 2022-05-17 Maven Optronics Co., Ltd. Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same
US10770636B2 (en) 2018-02-14 2020-09-08 Epistar Corporation Light emitting device and manufacturing method thereof
TWD201606S (zh) 2018-06-28 2019-12-21 晶元光電股份有限公司 發光裝置
JP7348478B2 (ja) * 2018-07-09 2023-09-21 日亜化学工業株式会社 発光装置及びその製造方法
TWD198613S (zh) 2018-08-08 2019-07-11 晶元光電股份有限公司 發光二極體之部分
CN112713166B (zh) * 2019-10-25 2023-02-17 成都辰显光电有限公司 显示面板、电子设备及显示面板的制作方法
CN113867044B (zh) * 2020-06-30 2025-05-16 光森科技有限公司 光源模块
TWM607954U (zh) * 2020-06-30 2021-02-21 光森科技有限公司 光源模組
US12344784B2 (en) * 2020-08-31 2025-07-01 Quantum Advanced Solutions Limited Stabilized perovskite quantum dot material
EP3968390B1 (en) * 2020-09-15 2025-08-13 Eosopto Technology Co., Ltd Light source module
TWD214986S (zh) 2020-10-07 2021-11-01 晶元光電股份有限公司 發光二極體之部分
US11996384B2 (en) 2020-12-15 2024-05-28 Pulseforge, Inc. Method and apparatus for debonding temporarily bonded wafers in wafer-level packaging applications
DE112021007175T5 (de) * 2021-02-25 2023-12-14 Ams-Osram International Gmbh Bauelement mit hybridem reflektor und verfahren zu dessen herstellung
DE102021202920A1 (de) * 2021-03-25 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip, herstellungsverfahren und halbleiterbauteil
KR102837821B1 (ko) * 2022-05-24 2025-07-23 주식회사 루츠 형광체의 제조방법

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403937A2 (en) * 2002-09-30 2004-03-31 Citizen Electronics Co., Ltd. Light emitting diode and backlight unit
US20080186733A1 (en) * 2007-02-02 2008-08-07 Lighthouse Technology Co., Ltd. LED & LED-applied backlight module
US20090230410A1 (en) * 2008-03-17 2009-09-17 Samsung Electro-Mechanics Co., Ltd. Led package and method of manufacturing the same
US20100032691A1 (en) * 2008-08-05 2010-02-11 Kim Yusik Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
WO2010044023A1 (en) * 2008-10-17 2010-04-22 Koninklijke Philips Electronics N.V. Light emitting device
US20100134716A1 (en) * 2006-08-25 2010-06-03 Sharp Kabushiki Kaisha Light emitting element, light emitting element array, backlight unit, and liquid crystal display
WO2013121800A1 (en) * 2012-02-16 2013-08-22 Citizen Electronics Co., Ltd. Light-emitting diode and lighting device including the same
CN104633493A (zh) * 2013-11-14 2015-05-20 晶元光电股份有限公司 发光装置

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19714170C1 (de) * 1997-03-21 1998-07-30 Siemens Ag Elektrooptisches Modul
JP2004039778A (ja) * 2002-07-02 2004-02-05 Matsushita Electric Ind Co Ltd 照明用発光素子
JP2005072397A (ja) * 2003-08-26 2005-03-17 Kyocera Corp 発光素子収納用パッケージおよび発光装置
JP4773048B2 (ja) * 2003-09-30 2011-09-14 シチズン電子株式会社 発光ダイオード
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
KR20060077801A (ko) * 2004-12-31 2006-07-05 엘지전자 주식회사 고출력 발광 다이오드 및 그의 제조 방법
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置
JP2007165696A (ja) * 2005-12-15 2007-06-28 Sanyo Electric Co Ltd 半導体装置及びその製造方法
TWM304049U (en) * 2006-07-19 2007-01-01 K Bridge Electronics Co Ltd Light source of backlight module
JP5315070B2 (ja) * 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
US7800125B2 (en) * 2008-07-09 2010-09-21 Himax Display, Inc. Light-emitting diode package
KR101497953B1 (ko) * 2008-10-01 2015-03-05 삼성전자 주식회사 광추출 효율이 향상된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
JP5075786B2 (ja) * 2008-10-06 2012-11-21 株式会社東芝 発光装置及びその製造方法
CN201289864Y (zh) * 2008-11-19 2009-08-12 深圳市聚飞光电有限公司 侧面发光二极管
JP5521325B2 (ja) * 2008-12-27 2014-06-11 日亜化学工業株式会社 発光装置及びその製造方法
JP2011061056A (ja) 2009-09-11 2011-03-24 Stanley Electric Co Ltd 線状発光装置、その製造方法並びに面光源装置
TW201120486A (en) * 2009-12-14 2011-06-16 Coretronic Corp Brightness enhancement film and backlight module
CN102884645B (zh) * 2010-01-29 2015-05-27 西铁城电子株式会社 发光装置的制造方法以及发光装置
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN101872824A (zh) * 2010-06-07 2010-10-27 厦门市三安光电科技有限公司 侧面具有双反射层的氮化镓基倒装发光二极管及其制备方法
WO2012008220A1 (ja) * 2010-07-12 2012-01-19 シャープ株式会社 面発光装置および表示装置
TWI423098B (zh) * 2010-07-15 2014-01-11 Quanta Comp Inc 光學觸控結構
US9134595B2 (en) * 2011-09-29 2015-09-15 Casio Computer Co., Ltd. Phosphor device, illumination apparatus and projector apparatus
TW201318221A (zh) * 2011-10-26 2013-05-01 漢磊科技股份有限公司 發光二極體之矽支架及其製造方法
JP2013115088A (ja) * 2011-11-25 2013-06-10 Citizen Holdings Co Ltd 半導体発光装置
JP2013143496A (ja) * 2012-01-11 2013-07-22 Toshiba Corp Ledパッケージ及びその製造方法
JP2013157523A (ja) * 2012-01-31 2013-08-15 Toyoda Gosei Co Ltd 半導体発光素子、半導体発光素子の製造方法および発光装置
JP5953155B2 (ja) * 2012-02-24 2016-07-20 スタンレー電気株式会社 半導体発光装置
CN103515506B (zh) * 2012-06-15 2017-04-26 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
JP5891133B2 (ja) * 2012-07-12 2016-03-22 スタンレー電気株式会社 半導体発光装置
TWM461760U (zh) * 2013-04-29 2013-09-11 勝華科技股份有限公司 光學透鏡與光源裝置
CN103280508B (zh) * 2013-05-24 2015-12-23 江阴长电先进封装有限公司 一种晶圆级led封装方法
JP2015028984A (ja) * 2013-07-30 2015-02-12 日亜化学工業株式会社 半導体発光素子
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
KR102242660B1 (ko) * 2013-09-11 2021-04-21 엘지디스플레이 주식회사 발광 다이오드 소자 및 이를 포함하는 백라이트 유닛과 이의 제조 방법
EP2854186A1 (en) 2013-09-26 2015-04-01 Seoul Semiconductor Co., Ltd. Light source module, fabrication method therefor, and backlight unit including the same
TWI520383B (zh) * 2013-10-14 2016-02-01 新世紀光電股份有限公司 發光二極體封裝結構
JP6299176B2 (ja) * 2013-11-22 2018-03-28 日亜化学工業株式会社 発光装置およびその製造方法ならびにこの発光装置を備える照明装置
CN103618041B (zh) * 2013-12-11 2016-03-30 江阴长电先进封装有限公司 一种esd保护的led封装结构及其封装方法
JP2017510061A (ja) * 2014-01-29 2017-04-06 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. 封止材で充填した蛍光体変換ledのための浅底反射器カップ
US9343443B2 (en) * 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9608168B2 (en) * 2014-06-13 2017-03-28 Seoul Viosys Co., Ltd. Light emitting diode
US10217904B2 (en) * 2015-02-03 2019-02-26 Epistar Corporation Light-emitting device with metallized mounting support structure

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1403937A2 (en) * 2002-09-30 2004-03-31 Citizen Electronics Co., Ltd. Light emitting diode and backlight unit
US20100134716A1 (en) * 2006-08-25 2010-06-03 Sharp Kabushiki Kaisha Light emitting element, light emitting element array, backlight unit, and liquid crystal display
US20080186733A1 (en) * 2007-02-02 2008-08-07 Lighthouse Technology Co., Ltd. LED & LED-applied backlight module
US20090230410A1 (en) * 2008-03-17 2009-09-17 Samsung Electro-Mechanics Co., Ltd. Led package and method of manufacturing the same
US20100032691A1 (en) * 2008-08-05 2010-02-11 Kim Yusik Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
WO2010044023A1 (en) * 2008-10-17 2010-04-22 Koninklijke Philips Electronics N.V. Light emitting device
WO2013121800A1 (en) * 2012-02-16 2013-08-22 Citizen Electronics Co., Ltd. Light-emitting diode and lighting device including the same
CN104633493A (zh) * 2013-11-14 2015-05-20 晶元光电股份有限公司 发光装置

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