CN106784412A - 柔性有机发光二极管显示器及其制作方法 - Google Patents

柔性有机发光二极管显示器及其制作方法 Download PDF

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CN106784412A
CN106784412A CN201710203341.2A CN201710203341A CN106784412A CN 106784412 A CN106784412 A CN 106784412A CN 201710203341 A CN201710203341 A CN 201710203341A CN 106784412 A CN106784412 A CN 106784412A
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amorphous silicon
raceway groove
organic light
light emitting
emitting diode
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CN106784412B (zh
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王威
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种柔性有机发光二极管显示器及其制作方法，该方法包括在柔性衬底上沉积非晶硅薄膜，并对所述非晶硅薄膜进行第一图形化处理；对所述第一图形化处理后的非晶硅薄膜进行结晶处理，形成定向结晶的多晶硅薄膜；对所述多晶硅薄膜进行第二次图形化处理，形成沟道；在所述沟道上依次形成栅极、源极和漏极；在所述源极和漏极上形成OLED显示层；在所述OLED显示层上形成封装层。本发明的柔性有机发光二极管显示器及其制作方法，能够避免主动层在弯曲应力下导致晶界处成键断裂/变形而引起的TFT电性不良的风险，提高了柔性显示器件在弯曲应力下的可靠性。

Description

柔性有机发光二极管显示器及其制作方法
【技术领域】
本发明涉及显示器技术领域，特别是涉及一种柔性有机发光二极管显示器及其制作方法。
【背景技术】
目前，柔性显示技术主要应用在中小尺寸的产品中，一般采用LTPS-TFT背板，其采用准分子雷射退火(excimer laser annealing，ELA)结晶的低温多晶硅(Low TemperaturePoly-silicon，LTPS)作为薄膜晶体管(Thin Film Transistor，TFT)的沟道层。TFT的电学参数(阈值电压、亚阈值摆幅、迁移率等)与沟道内晶界密度强烈相关。若要使得阵列基板具有良好的电性均一性，需要LTPS薄膜具有非常均一的晶粒尺寸。
LTPS薄膜由许多硅晶粒组成，难免存在晶界。由于LTPS薄膜的晶界面上原子结合力较弱，导致在弯曲应力下，晶界处容易发生原子间成键断裂/变形，使TFT电性恶化甚至器件失效。
因此，有必要提供一种柔性有机发光二极管显示器及其制作方法，以解决现有技术所存在的问题。
【发明内容】
本发明的目的在于提供一种柔性有机发光二极管显示器及其制作方法，能够降低LTPS薄膜沿沟道长度方向上的晶界密度。
为解决上述技术问题，本发明提供一种柔性有机发光二极管显示器的制作方法，其包括：
在柔性衬底上沉积非晶硅薄膜，并对所述非晶硅薄膜进行第一图形化处理；
对所述第一图形化处理后的非晶硅薄膜进行结晶处理，形成定向结晶的多晶硅薄膜；
对所述多晶硅薄膜进行第二次图形化处理，形成沟道；
在所述沟道上依次形成栅极、源极和漏极；
在所述源极和漏极上形成OLED显示层；
在所述OLED显示层上形成封装层。
在本发明的柔性有机发光二极管显示器的制作方法中，对所述非晶硅薄膜进行第一图形化处理后形成多个子非晶硅薄膜，所述子非晶硅薄膜具有两组相邻的第一边和第二边，第一边的长度小于第二边的长度；
所述沟道的长度方向与所述第一边平行；所述沟道的宽度方向与所述第二边平行。
在本发明的柔性有机发光二极管显示器的制作方法中，所述多晶硅薄膜沿所述第一边的延长线方向结晶。
在本发明的柔性有机发光二极管显示器的制作方法中，所述多晶硅薄膜包括多个多晶硅晶粒，所述多晶硅晶粒的长度方向与所述沟道的长度方向一致，所述多晶硅晶粒的宽度方向与所述沟道的宽度方向一致。
在本发明的柔性有机发光二极管显示器的制作方法中，所述结晶处理的方式为准分子退火处理。
在本发明的柔性有机发光二极管显示器的制作方法中，所述在柔性衬底上沉积非晶硅薄膜的步骤包括：
在柔性衬底上形成阻挡层；
在所述阻挡层上形成缓冲层；
在所述缓冲层上沉积非晶硅薄膜。
在本发明的柔性有机发光二极管显示器的制作方法中，在所述沟道上依次形成栅极的步骤包括：
在所述沟道上形成栅绝缘层；
在所述栅绝缘层上形成第一金属层，对所述第一金属层进行图案化处理得到所述栅极。
本发明还提供一种柔性有机发光二极管显示器，其包括：
柔性衬底；
主动阵列层，位于所述柔性衬底上，所述主动阵列层包括用于形成沟道的主动层，所述沟道是对定向结晶的多晶硅薄膜进行第二次图形化处理得到的；所述定向结晶的多晶硅薄膜是通过对非晶硅薄膜进行第一图形化处理，并且对所述第一图形化处理后的非晶硅薄膜进行结晶处理形成的；
OLED显示层，位于所述主动阵列层上；
封装层，位于所述OLED显示层上。
在本发明的柔性有机发光二极管显示器中，所述第一图形化处理后的非晶硅薄膜包括多个子非晶硅薄膜，所述子非晶硅薄膜具有两组相邻的第一边和第二边，第一边的长度小于第二边的长度；
所述沟道的长度方向与所述第一边平行；所述沟道的宽度方向与所述第二边平行。
在本发明的柔性有机发光二极管显示器中，所述多晶硅薄膜包括多个多晶硅晶粒，所述多晶硅晶粒的长度方向与所述沟道的长度方向一致，所述多晶硅晶粒的宽度方向与所述沟道的宽度方向一致。
本发明的柔性有机发光二极管显示器及其制作方法，由于采用定向结晶的多晶硅薄膜制作主动层，使得沿TFT沟道方向的LTPS薄膜晶界密度较低。因而，使得TFT具有更好的电学性能，在弯曲应力下晶界处不容易发生原子间成键断裂/变形，提高了TFT的可靠性，提高了柔性显示器件在弯曲应力下的可靠性。
【附图说明】
图1为本发明的柔性有机发光二极管显示器的制作方法的第一步的示意图。
图2为本发明的柔性有机发光二极管显示器的制作方法的第二步的示意图。
图3为图2中的子非晶硅薄膜的放大结构示意图。
图4为本发明的柔性有机发光二极管显示器的制作方法的第三步的示意图。
图5为本发明的柔性有机发光二极管显示器的制作方法的第四步的示意图。
图6为本发明的柔性有机发光二极管显示器中薄膜晶体管的结构示意图。
图7为本发明的柔性有机发光二极管显示器的结构示意图。
【具体实施方式】
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为本发明的柔性有机发光二极管显示器的制作方法的第一步的结构示意图。
如图1所示，本发明的一种柔性有机发光二极管显示器的制作方法，包括：
S101、在柔性衬底上沉积非晶硅薄膜。
如图1所示，在衬底11上依次沉积阻挡层、缓冲层以及非晶硅薄膜12。
S102、对所述非晶硅薄膜进行第一图形化处理。
如图2所示，采用黄光工艺对非晶硅薄膜12进行图形化处理，以得到多个子非晶硅薄膜13。
在一实施方式中，所述子非晶硅薄膜13的形状为长方形，如图3所示，所述子非晶硅薄膜13具有两组相邻的第一边131(短边)和第二边132(长边)，第一边131的长度小于第二边132的长度。
结合图7，所述在柔性衬底上沉积非晶硅薄膜的步骤包括：
S1021、在柔性衬底上形成阻挡层。
比如在柔性衬底11上形成阻挡层21，阻挡层21的材料为SiO2、SiNx或者Al2O3等无机材料，用于隔离水分子，避免空气中的水分子对薄膜晶体管造成破坏。该阻挡层21通过低温等离子增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)或者原子层沉积(Atomic Layer Deposition，ALD)技术制得。
S1022、在所述阻挡层上形成缓冲层。
该缓冲层22的材料为无机材料。所述缓冲层22的材料可为SiO2、SiNx或者Al2O3。缓冲层22的制备方法与阻挡层21的制备方法相同。
S1023、在所述缓冲层上沉积非晶硅薄膜。
S103、对所述第一图形化处理后的非晶硅薄膜进行结晶处理，形成定向结晶的多晶硅薄膜；
如图4所示，也即对图2所示的多个子非晶硅薄膜进行结晶处理，形成沿子非晶硅薄膜的短边方向定向结晶的多晶硅薄膜14。
在一实施方式中，该结晶的方式可以为准分子激光退火。由于非晶硅薄膜吸收激光能量后融化成液态，随后再对其进行降温结晶。由于子非晶硅薄膜13的边缘热量散发比较快，温度较低，因此边缘处成为多晶硅结晶的形核点。多晶硅晶粒由子非晶硅薄膜13的边缘(低温区)向子非晶硅薄膜13的中心点(高温区)定向结晶，从而形成垂直于子非晶硅薄膜13的长边方向的柱状多晶硅晶粒。由于沿子非晶硅薄膜的短边方向的距离较短，温差大，容易形成沿短边方向生长的多晶硅晶粒。
也即，所述多晶硅薄膜14包括多个多晶硅晶粒15，多个晶硅晶粒15并排设置，其形状为长方形。该多晶硅晶粒15具有一长边151和短边152。长边所在的方向为长度方向，短边所在的方向为宽度方向。
S104、对所述多晶硅薄膜进行第二次图形化处理，形成沟道。
如图5所示，所述沟道16的长度方向161与所述多晶硅晶粒15的长度方向一致，所述沟道16的宽度方向162与所述多晶硅晶粒15的宽度方向一致。
进一步地，所述沟道16的长度方向161与所述第一边131平行；所述沟道16的宽度方向162与所述第二边132平行。
从而使得沿薄膜晶体管的沟道长度方向，具有非常低的晶界密度。因而，在弯曲应力下晶界处不容易发生原子间成键断裂/变形，使得在弯曲应力下薄膜晶体管具有更高的可靠性和电学性能，提高了柔性显示器件在弯曲应力下的可靠性。
S105、在所述沟道上依次形成栅极、源极和漏极，以得到薄膜晶体管。
比如，在所述沟道上依次形成栅绝缘层、栅极、层间绝缘层以及源极和漏极。
如图6所示，该薄膜晶体管包括栅极171、漏极171、源极173，沟道16位于源极172和漏极171之间。
上述步骤S105在所述沟道上依次形成栅极的步骤包括：
结合图6和7，S1051、在所述沟道16上形成栅绝缘层23；
S1052、在所述栅绝缘层23上形成第一金属层24，对所述第一金属层24进行图案化处理，以得到栅极。
进一步地，上述方法还可以包括：
S1053、在所述第一金属层24上形成层间绝缘层25；
S1054、在所述层间绝缘层25上形成第二金属层26，对所述第二金属层26进行图案化处理得到所述源极和漏极。
S106、在所述源极和漏极上形成OLED显示层30；
S107、在所述OLED显示层30上形成封装层40。
本发明的柔性有机发光二极管显示器的制作方法，由于采用定向结晶的多晶硅薄膜制作主动层，使得沿TFT沟道方向的LTPS薄膜晶界密度较低。因而，使得TFT具有更好的电学性能，在弯曲应力下晶界处不容易发生原子间成键断裂/变形，提高了TFT的可靠性，提高了柔性显示器件在弯曲应力下的可靠性。
如图7所示，本发明的柔性有机发光二极管显示器包括柔性衬底11、阻挡层21、缓冲层22、主动阵列层20、OLED显示层30、封装层40。
该阻挡层21位于柔性衬底11上，主动阵列层20位于所述缓冲层22上。阻挡层21的材料为SiO2、SiNx或者Al2O3等无机材料，用于隔离水分子，避免空气中的水分子对薄膜晶体管造成破坏。该阻挡层21通过低温等离子增强化学气相沉积(Plasma Enhanced ChemicalVapor Deposition，PECVD)或者原子层沉积(Atomic Layer Deposition，ALD)技术制得。
该缓冲层22的材料为无机材料，所述缓冲层22的材料可为SiO2、SiNx或者Al2O3。缓冲层22的制备方法与阻挡层21的制备方法相同。
所述主动阵列层20包括用于形成沟道16的主动层、栅绝缘层23、第一金属层24、层间绝缘层25、第二金属层26。
所述主动层的材料为定向结晶的多晶硅薄膜，所述定向结晶的多晶硅薄膜是通过对非晶硅薄膜进行第一图形化处理，并且对所述第一图形化处理后的非晶硅薄膜进行结晶处理形成的。所述沟道16是对定向结晶的多晶硅薄膜进行第二次图形化处理得到的。
第一金属层24与主动层之间设置有栅绝缘层23、对第一金属层24进行图案化处理得到栅极(也即栅金属电极)。层间绝缘层25位于栅极上。第二金属层26位于层间绝缘层25上，对第二金属层26进行图案化处理，得到源极和漏极(也即源漏金属电极)。
其中OLED显示层30位于所述主动阵列层20上。OLED显示层30包括有机发光单元，其中有机发光单元与主动阵列层电性连接，具体地有机发光单元与薄膜晶体管的漏极连接。封装层40位于所述OLED显示层30上。
本发明的种柔性有机发光二极管显示器，由于采用定向结晶的多晶硅薄膜制作主动层，使得沿TFT沟道方向的LTPS薄膜晶界密度较低。因而，使得TFT具有更好的电学性能，在弯曲应力下具有更高的可靠性，提高了柔性显示器件在弯曲应力下的可靠性。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种柔性有机发光二极管显示器的制作方法，其特征在于，包括：
在柔性衬底上沉积非晶硅薄膜，并对所述非晶硅薄膜进行第一图形化处理；
对所述第一图形化处理后的非晶硅薄膜进行结晶处理，形成定向结晶的多晶硅薄膜；
对所述多晶硅薄膜进行第二次图形化处理，形成沟道；
在所述沟道上依次形成栅极、源极和漏极；
在所述源极和漏极上形成OLED显示层；
在所述OLED显示层上形成封装层。
2.根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其特征在于，对所述非晶硅薄膜进行第一图形化处理后形成多个子非晶硅薄膜，所述子非晶硅薄膜具有两组相邻的第一边和第二边，第一边的长度小于第二边的长度；
所述沟道的长度方向与所述第一边平行；所述沟道的宽度方向与所述第二边平行。
3.根据权利要求2所述的柔性有机发光二极管显示器的制作方法，其特征在于，所述多晶硅薄膜沿所述第一边的延长线方向结晶。
4.根据权利要求2所述的柔性有机发光二极管显示器的制作方法，其特征在于，所述多晶硅薄膜包括多个多晶硅晶粒，所述多晶硅晶粒的长度方向与所述沟道的长度方向一致，所述多晶硅晶粒的宽度方向与所述沟道的宽度方向一致。
5.根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其特征在于，所述结晶处理的方式为准分子退火处理。
6.根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其特征在于，所述在柔性衬底上沉积非晶硅薄膜的步骤包括：
在柔性衬底上形成阻挡层；
在所述阻挡层上形成缓冲层；
在所述缓冲层上沉积非晶硅薄膜。
7.根据权利要求1所述的柔性有机发光二极管显示器的制作方法，其特征在于，在所述沟道上依次形成栅极的步骤包括：
在所述沟道上形成栅绝缘层；
在所述栅绝缘层上形成第一金属层，对所述第一金属层进行图案化处理得到所述栅极。
8.一种柔性有机发光二极管显示器，其特征在于，包括
柔性衬底；
主动阵列层，位于所述柔性衬底上，所述主动阵列层包括用于形成沟道的主动层，所述沟道是对定向结晶的多晶硅薄膜进行第二次图形化处理得到的；所述定向结晶的多晶硅薄膜是通过对非晶硅薄膜进行第一图形化处理，并且对所述第一图形化处理后的非晶硅薄膜进行结晶处理形成的；
OLED显示层，位于所述主动阵列层上；
封装层，位于所述OLED显示层上。
9.根据权利要求8所述的柔性有机发光二极管显示器，其特征在于，
所述第一图形化处理后的非晶硅薄膜包括多个子非晶硅薄膜，所述子非晶硅薄膜具有两组相邻的第一边和第二边，第一边的长度小于第二边的长度；
所述沟道的长度方向与所述第一边平行；所述沟道的宽度方向与所述第二边平行。
10.根据权利要求8所述的柔性有机发光二极管显示器，其特征在于，所述多晶硅薄膜包括多个多晶硅晶粒，所述多晶硅晶粒的长度方向与所述沟道的长度方向一致，所述多晶硅晶粒的宽度方向与所述沟道的宽度方向一致。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019010749A1 (zh) * 2017-07-12 2019-01-17 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示器
CN110838467A (zh) * 2019-10-18 2020-02-25 武汉华星光电技术有限公司 低温多晶硅基板的制作方法及低温多晶硅基板
CN111279458A (zh) * 2017-07-31 2020-06-12 康宁股份有限公司 制造多晶硅的闪光灯退火方法
JP2021503093A (ja) * 2017-11-01 2021-02-04 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． フレキシブル表示パネル及びその製造方法、フレキシブル表示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007022302A2 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York High throughput crystallization of thin films
CN101179110A (zh) * 2006-11-10 2008-05-14 三星Sdi株式会社 有机发光显示器及其制造方法
CN101517135A (zh) * 2006-08-07 2009-08-26 Tcz私营有限公司 用于优化非晶硅的结晶的系统和方法
WO2013030885A1 (ja) * 2011-08-30 2013-03-07 パナソニック株式会社 薄膜形成基板の製造方法及び薄膜基板
CN104064451A (zh) * 2014-07-10 2014-09-24 深圳市华星光电技术有限公司 低温多晶硅的制作方法及使用该方法的tft基板的制作方法与tft基板结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831299B2 (en) * 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4464078B2 (ja) * 2003-06-20 2010-05-19 株式会社 日立ディスプレイズ 画像表示装置
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
KR101018118B1 (ko) * 2008-06-23 2011-02-25 단국대학교 산학협력단 플렉시블 오엘이디를 이용한 피부 팽창선조 치료 장치
KR101018246B1 (ko) * 2008-06-24 2011-03-03 단국대학교 산학협력단 플렉시블 오엘이디를 이용한 근육, 관절통 완화 장치
CN102983155B (zh) * 2012-11-29 2015-10-21 京东方科技集团股份有限公司 柔性显示装置及其制作方法
CN103474583A (zh) * 2013-09-24 2013-12-25 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
CN103500745B (zh) * 2013-09-25 2014-12-17 京东方科技集团股份有限公司 柔性显示基板及其制备方法、柔性显示装置
KR102180037B1 (ko) * 2013-11-06 2020-11-18 삼성디스플레이 주식회사 가요성 표시 장치 및 그 제조 방법
CN105931988B (zh) * 2016-05-30 2019-12-24 深圳市华星光电技术有限公司 Amoled像素驱动电路的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007022302A2 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York High throughput crystallization of thin films
CN101517135A (zh) * 2006-08-07 2009-08-26 Tcz私营有限公司 用于优化非晶硅的结晶的系统和方法
CN101179110A (zh) * 2006-11-10 2008-05-14 三星Sdi株式会社 有机发光显示器及其制造方法
WO2013030885A1 (ja) * 2011-08-30 2013-03-07 パナソニック株式会社 薄膜形成基板の製造方法及び薄膜基板
CN104064451A (zh) * 2014-07-10 2014-09-24 深圳市华星光电技术有限公司 低温多晶硅的制作方法及使用该方法的tft基板的制作方法与tft基板结构

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019010749A1 (zh) * 2017-07-12 2019-01-17 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示器
CN111279458A (zh) * 2017-07-31 2020-06-12 康宁股份有限公司 制造多晶硅的闪光灯退火方法
CN111279458B (zh) * 2017-07-31 2023-10-27 康宁股份有限公司 制造多晶硅的闪光灯退火方法
JP2021503093A (ja) * 2017-11-01 2021-02-04 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． フレキシブル表示パネル及びその製造方法、フレキシブル表示装置
US11963435B2 (en) 2017-11-01 2024-04-16 Boe Technology Group Co., Ltd. Flexible display panel and fabricating method thereof, flexible display apparatus
CN110838467A (zh) * 2019-10-18 2020-02-25 武汉华星光电技术有限公司 低温多晶硅基板的制作方法及低温多晶硅基板

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