CN106647077A - 一种显示面板和显示装置 - Google Patents

一种显示面板和显示装置 Download PDF

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CN106647077A
CN106647077A CN201611248010.2A CN201611248010A CN106647077A CN 106647077 A CN106647077 A CN 106647077A CN 201611248010 A CN201611248010 A CN 201611248010A CN 106647077 A CN106647077 A CN 106647077A
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layer
metal
display floater
protective layer
metal level
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CN106647077B (zh
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简重光
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Chongqing HKC Optoelectronics Technology Co Ltd
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Priority to US16/461,375 priority patent/US20200058796A1/en
Priority to PCT/CN2017/081227 priority patent/WO2018120530A1/zh
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    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • GPHYSICS
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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Abstract

本发明公开一种显示面板和显示装置,显示面板包括:基板、主动开关阵列和彩色光阻层,所述形成于主动开关阵列上,所述主动开关阵列包括金属层,所述金属层设置在基板上,所述基板上设有保护层,所述保护层至少设置两层,所述保护层覆盖于所述金属层上,所述保护层对所述金属层和所述彩色光阻层进行分隔,当需要对所述彩色光阻层进行重工时,所述保护层能够更好的对所述金属层进行保护,通过设置至少两层保护层,能够更好的对金属层上的金属毛刺进行覆盖,非常有效的防止金属毛刺裸露在保护层外,使得保护层能够更好的对金属层进行保护;同时采用保护层的设置能够很好的对制程出现问题的区域进行重工修复,而不需要将薄膜晶体管阵列基板进行报废处理,更加的绿色环保。

Description

一种显示面板和显示装置
技术领域
本发明涉及显示技术领域,更具体的说,涉及一种显示面板和显示装置。
背景技术
显示器具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。现有市场上的显示器大部分为背光型显示器,其包括显示面板及背光模组(backlight module)。显示面板的工作原理是在两片平行的基板当中放置液晶分子,并在两片基板上施加驱动电压来控制液晶分子的旋转方向,以将背光模组的光线折射出来产生画面。
其中,薄膜晶体管显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能,目前已经逐渐占据了显示领域的主导地位。同样,薄膜晶体管显示器包含显示面板和背光模组,显示面板包括彩膜基板(Color Filter Substrate,CF Substrate,也称彩色滤光片基板)和薄膜晶体管阵列基板(Thin Film Transistor Substrate,TFT Substrate),上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal,LC)。显示面板是通过电场对液晶分子取向的控制,改变光的偏振状态,并藉由偏光板实现光路的穿透与阻挡,实现显示的目的。
彩色光阻设置在阵列基板(Color Filter On TFT,COT)的技术近年来被广泛的应用于薄膜晶体管显示器产品上,其工艺有利于大尺寸及曲面式显示器应用的发展。
在COT技术于薄膜晶体管阵列基板工艺中,金属层容易断线,进而造成基板报废,增加报废成本。
发明内容
本发明所要解决的技术问题是提供一种减少金属层断线,提高良品率的显示面板。
此外,本发明还提供一种包括以上所述显示面板的显示装置。
本发明的目的是通过以下技术方案来实现的:一种显示面板,其特征在于,所述显示面板包括:
基板;
主动开关阵列;
彩色光阻层,形成于主动开关阵列上;
所述主动开关阵列,包括金属层,所述金属层设置在基板上,所述基板上设有保护层,所述保护层至少设置两层,所述保护层覆盖于所述金属层上,所述保护层对所述金属层和所述彩色光阻层进行分隔,当需要对所述彩色光阻层进行重工时,所述保护层能够更好的对所述金属层进行保护。
其中,所述保护层包括氧化硅层或氮化硅层,金属层上沉积至少两层氧化硅层或氮化硅层,从而更好的对金属层上进行覆盖,非常有效的防止金属毛刺裸露在保护层外,使得保护层能够更好的对金属层进行保护,氧化硅的化学性质比较稳定,不会与氢氧化钾溶液进行反应,有效的避免清洗剂对金属层的腐蚀破坏,能够非常好的对金属层进行保护;氮化硅层是一种超硬物质,且氮化硅材料耐磨损,高温时抗氧化,还能抵抗冷热冲击;而且通过进行多次化学气相沉积形成至少两层氧化硅层,中途不需要额外更换的原材料,也不需要额外更换设备,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购;同时化学气相沉积技术成熟,能够很好的控制氮化硅的使用量,进一步的减低了生产制造成本,使得显示面板具有更强的市场竞争力。。
其中,所述保护层包括氮化硅层和氧化硅层;所述氮化硅层和氧化硅层堆叠设置,通过氮化硅层和氧化硅层堆叠设置,使得保护层能够更好的附着在金属层上,能够更好的对金属层上的金属毛刺进行覆盖,非常有效的防止金属毛刺裸露在保护层外,使得保护层能够更好的对金属层进行保护,能够非常有效的避免清洗剂对液晶面板的金属层的直接腐蚀,使得金属层能够保持完好,从而避免产生断线问题,进一步的提高了显示面板的耐用性。
其中,所述保护层包括至少两层氮化硅层和两层氧化硅层;所述氮化硅层和氧化硅层交替堆叠设置,使得保护层能够更好的附着在金属层上,能够更好的对金属层上的金属毛刺进行覆盖,非常有效的防止金属毛刺裸露在保护层外,使得保护层能够更好的对金属层进行保护。。
其中,所述金属层包括第一金属层;所述第一金属上覆盖有所述保护层;所述彩色光阻层直接覆盖于所述保护层上。
其中,所述第一金属层包括源极金属层和漏极金属层,所述源极金属层与所述显示面板的源极驱动连接;所述漏极金属层与所述显示面板的像素电极连接;所述保护层覆盖于所述源极金属层和/或漏极金属层上。
其中,所述第一金属层采用铝或铝合金制成,铝或铝合金具有较好的导电性能和较低的电阻特性,能满足显示面板的需求,而且铝或铝合金的价格相对便宜,供货充足,方便采购,进一步的降低了显示面板的制造成本,使得显示面板具有更强的市场竞争力。
其中,所述金属层还包括第二金属层,所述第二金属层底部宽度大于顶部,所述第一金属层与显示面板的行扫描驱动连接,第二金属层底部宽度大于顶部,使得第二金属层的制作更加的方便,成型更加稳定,良品率更高,而且使得第二金属层底部的接触面积更大,粘粘效果更好,固定更加的牢固。
其中,所述第二金属层与所述第一金属层之间设有绝缘层,所述绝缘层材料为氧化硅或氮化硅,与后续步骤设置保护层的材料和方法相同,在后续设置保护层时,不需要额外更换的原材料,也不需要额外更换设备,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购。。
根据本发明的另一个方面,本发明还公开了一种显示装置,所述显示装置包括背光模组和如上所述的显示面板。
与现有技术相比,本发明的技术效果是:
发明人研究发现,COT技术的显示面板,当发现制程出现问题时,会利用清洗剂对制程出现问题的区域进行重工剥除,但是在重工工艺中,清洗剂会对液晶面板的金属层进行腐蚀,进而产生断线问题,现有做法倾向不进行重工而是直接将玻璃报废,进而造成报废成本上升。本发明通过保护层的设置,将保护层覆盖于金属层上,采用COT技术对基板进行制程出现问题的区域重工时,保护层能够非常有效的避免清洗剂对液晶面板的金属层的直接腐蚀,使得金属层能够保持完好,从而避免产生断线问题,进而提升COT技术薄膜晶体管阵列基板的重工成功率而降低报废成本;而且金属层的侧边从微结构来看都有金属毛刺的现象,通过设置至少两层保护层,能够更好的对金属层上的金属毛刺进行覆盖,非常有效的防止金属毛刺裸露在保护层外,使得保护层能够更好的对金属层进行保护;同时采用保护层的设置能够很好的对制程出现问题的区域进行重工修复,而不需要将薄膜晶体管阵列基板进行报废处理,更加的绿色环保。
附图说明
图1是本发明现有设计的显示面板的剖面示意图;
图2是本发明实施例的显示面板的保护层剖面示意图;
图3是本发明实施例的显示面板的保护层另一剖面示意图;
图4是本发明实施例的显示面板的保护层另一剖面示意图;
图5是本发明实施例的显示面板的保护层另一剖面示意图;
图6是本发明实施例的显示面板的第二金属的剖面示意图。
其中:1、基板,2、金属层,21、第一金属层,211、源极金属层,212、漏极金属层,213、金属毛刺,22、第二金属层,221、第一高附着金属层,222、中间导电层,223、第二高附着金属层,3、保护层,31、第一保护层,32、第二保护层,4、绝缘层,5、半导体层,6,沟道。
具体实施方式
这里所公开的具体结构和功能细节仅仅是代表性的,并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现,并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本发明的描述中,需要理解的是,术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,除非另有说明,“多个”的含义是两个或两个以上。另外,术语“包括”及其任何变形,意图在于覆盖不排他的包含。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指,否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是,这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在,而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和较佳的实施例对本发明作进一步说明。
如图1所示是一种薄膜晶体管的结构,在COT技术于薄膜晶体管阵列基板工艺中,当发现金属层2上的制程出现问题时,会利用清洗剂对制程出现问题的区域进行重工剥除,清洗剂采用氢氧化钾溶液(KOH溶液)。
为此,申请人设计了一款未公开的显示面板,如图2所示,在重工工艺以后,发明人对薄膜晶体管的结构进行研究发现:金属层2的侧边从微结构来看都有金属毛刺213的现象,设置一层保护层3覆盖在金属层2上,保护层3能够对金属毛刺213进行很好的覆盖,但还是有极少部分的金属毛刺213贯穿保护层3伸出到保护层3的表面,导致金属毛刺213裸露保护层3上,对基板1进行重工时,清洗剂对腐蚀裸露在保护层3上的金属毛刺213,通过对贯穿保护层3的金属毛刺213的不断的腐蚀,使得保护层3形成腐蚀通道,清洗剂沿着腐蚀通道到达金属层2,对金属层2进行腐蚀,进而导致金属层2之间相互断裂,
发明人进一步研究发现,由于金属毛刺的存在,设置一层保护层3不能很好的粘附在金属层2上,而且清洗剂对金属层2进行腐蚀而导致断线问题。因此,发明人提成一种新的技术方案,可以进一步减少金属层断线问题,提升良品率。
下面参考图3至图6描述本发明实施例的显示面板结构示意图。
如图3所示,所述显示面板包括基板1和金属层2;所述金属层2设置在基板1上,所述基板1上设有保护层3,本发明通过保护层3的设置,将保护层3覆盖于金属层2上,采用COT技术对基板1上制程出现问题的区域进行重工时,保护层3能够非常有效的避免清洗剂对液晶面板的金属层2的直接腐蚀,使得金属层2能够保持完好,从而减少产生断线问题,进而提升COT技术薄膜晶体管阵列基板1的重工成功率而降低报废成本。所述保护层3设置两层,分别为第一保护层31和第二保护层32,第一保护层31覆盖设在基板1上,第二保护层32覆盖设在第一保护层上,由于金属层2的侧边从微结构来看都有金属毛刺213的现象,通过设置至少两层保护层3,能够更好的对金属层2上的金属毛刺213进行覆盖,如图3所示,第一保护层31能够非常有效的对金属毛刺213进行覆盖,第二保护层32能够非常有效的对裸露在第一保护层31上的金属毛刺213进行覆盖,非有效的防止金属毛刺213裸露在保护层3外,使得保护层3能够更好的对金属层2进行保护;同时采用保护层3的设置能够很好的对制程出现问题的区域进行重工修复,而不需要将薄膜晶体管阵列基板1进行报废处理,更加的绿色环保。
其中,所述保护层3为氧化硅层,即保护层3采用氧化硅材料制成,通过化学气相沉积(Chemical Vapor Deposition,CVD)技术将氧化硅沉积到金属层2上,在金属层2上进行一次化学气相沉积后,等待第一层氧化硅层冷却凝固形成第一保护层31,在第一保护层31进行第二次化学气相沉积后形成第二保护层32,重复以上步骤,使得金属层2上沉积至少两层氧化硅层,从而更好的对金属层2上进行覆盖,非常有效的防止金属毛刺213裸露在保护层3外,使得保护层3能够更好的对金属层2进行保护,氧化硅的化学性质比较稳定,不会与氢氧化钾溶液进行反应,有效的避免清洗剂对金属层2的腐蚀破坏,能够非常好的对金属层2进行保护;而且通过进行多次化学气相沉积形成至少两层氧化硅层,中途不需要额外更换的原材料,也不需要额外更换设备,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购,同时化学气相沉积技术成熟,能够很好的控制氧化硅的使用量,进一步的减低了生产制造成本,使得显示面板具有更强的市场竞争力。
当然也可以是,所述保护层3为氮化硅层,即保护层3采用氮化硅材料制成,通过化学气相沉积技术将氮化硅沉积到金属层2上,在金属层2上进行一次化学气相沉积后,等待第一层氮化硅层冷却凝固形成第一保护层31,在第一保护层31进行第二次化学气相沉积后形成第二保护层32,重复以上步骤,使得金属层2上沉积至少两层氮化硅层,从而更好的对金属层2上进行覆盖,非常有效的防止金属毛刺213裸露在保护层3外,使得保护层3能够更好的对金属层2进行保护,氮化硅不会与氢氧化钾溶液进行反应,有效的避免清洗剂对金属层2的腐蚀破坏,能够非常好的对金属层2进行保护,氮化硅是一种超硬物质,且氮化硅材料耐磨损,高温时抗氧化,还能抵抗冷热冲击,而且通过进行多次化学气相沉积形成至少两层氮化硅层,中途不需要额外更换的原材料,也不需要额外更换设备,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购,同时化学气相沉积技术成熟,能够很好的控制氮化硅的使用量,进一步的减低了生产制造成本,使得显示面板具有更强的市场竞争力。
如图4所示,图示中的最外层采用阴影的画法,只是区分保护层3采用氮化硅层和氧化硅层堆叠,且不特指是氮化硅层或氧化硅,作为本发明的又一个实施例,所述保护层3包括氮化硅层和氧化硅层,通过化学气相沉积技术将氧化硅沉积到金属层2上,等待氧化硅层冷却凝固形成第一保护层31,然后化学气相沉积技术将氮化硅沉积到氧化硅层上形成第二保护层32,当然也可以是先设置氮化硅层作为第一保护层31,再将氧化硅层覆盖在氮化硅层上形成第二保护层32,通过氮化硅层和氧化硅层堆叠设置,使得保护层3能够更好的附着在金属层2上,能够更好的对金属层2上的金属毛刺213进行覆盖,非常有效的防止金属毛刺213裸露在保护层3外,使得保护层3能够更好的对金属层2进行保护,能够非常有效的避免清洗剂对液晶面板的金属层2的直接腐蚀,使得金属层2能够保持完好,从而避免产生断线问题,进一步的提高了显示面板的耐用性。
如图5所示,图示中未示意出金属毛刺213,金属毛刺213的示意可参照图3或图4,作为本发明的另外一个实施例,所述保护层3包括至少两层氮化硅层和两层氧化硅层;通过化学气相沉积技术将氧化硅沉积到金属层2上,等待氧化硅层冷却凝固,然后化学气相沉积技术将氮化硅沉积到氧化硅层上,再在氮化硅层上设置第二层氧化硅层,最后在第二层氧化硅层上设置第二层氮化硅层,当然也可以是先设置氮化硅层,再将氧化硅层覆盖在氮化硅层上,使得氮化硅层和氧化硅层交替堆叠设置,使得保护层3能够更好的附着在金属层2上,能够更好的对金属层2上的金属毛刺213进行覆盖,非常有效的防止金属毛刺213裸露在保护层3外,使得保护层3能够更好的对金属层2进行保护。
金属层2包括第一金属层21;第一金属上覆盖有保护层3;彩色光阻层直接覆盖于保护层3上,通过保护层3将彩色光阻层与第一金属层21进行分隔开,当发现彩色光阻层其中一层或多层的制程出现问题时,会利用清洗剂对彩色光阻层进行重工剥除,保护层3能够非常好的对第一金属层21进行保护,保护层3能够非常有效的避免清洗剂对液晶面板的金属层2的直接腐蚀,使得金属层2能够保持完好,从而避免产生断线问题;同时采用保护层3的设置能够很好的对彩色光阻层进行重工修复,而不需要将薄膜晶体管阵列基板1进行报废处理,更加的绿色环保。
第一金属层21包括源极金属层211和漏极金属层212,源极金属层211与显示面板的源极驱动连接;漏极金属层212与显示面板的像素电极连接;保护层3覆盖于源极金属层211和/或漏极金属层212上。
第一金属层21采用铝或铝合金制成,铝或铝合金具有较好的导电性能和较低的电阻特性,能满足显示面板的需求,而且铝或铝合金的价格相对便宜,供货充足,方便采购,进一步的降低了显示面板的制造成本,使得显示面板具有更强的市场竞争力。
其中,金属层2还包括第二金属层22,第二金属层22底部宽度大于顶部,第一金属层21与显示面板的行扫描驱动连接,第二金属层22底部宽度大于顶部,使得第二金属层22的制作更加的方便,成型更加稳定,良品率更高,而且使得第二金属层22底部的接触面积更大,粘粘效果更好,固定更加的牢固,其中第二金属层22的截面优选为梯形,特别是等腰梯形。
如图6所示,显示面板与行扫描驱动连接的第二金属层22采用三层结构,从下往上依次为与基板1连接的第一高附着金属层221、中间导电层222和第二高附着金属层223。中间导电层222可以采用较低电阻特性的金属,有效地降低显示面板第二金属层22的电阻与寄生电容,第二金属层22的第一高附着金属层221和第二高附着金属层223则采用附着性能较好的金属,这样中间导电层222可以很好的与第一高附着金属层221和第二高附着金属层223粘粘固定,同时中间导电层222还可以通过第一高附着金属层221和第二高附着金属层223与上下层粘粘固定,粘粘性更好,不容易导致中间导电层222与上下层剥离,即能很好的满足显示面板第二金属层22的电性性能,又能很好的与上下层粘粘固定,提升产品良率,降低生产成本。
其中,中间导电层222的厚度大于第一高附着金属层221和第二高附着金属层223的厚度。中间导电层222的厚度大于第一高附着金属层221的厚度,也大于第二高附着金属层223的厚度,中间导电层222可以采用较低电阻特性的金属,厚度更大能有效地降低面板第二金属层22的电阻与寄生电容,第一高附着金属层221和第二高附着金属层223则采用附着性能较好的金属,中间导电层222通过第一高附着金属层221和第二高附着金属层223与上下层连接,粘粘性更好,不容易导致中间导电层222与上下层剥离,第一高附着金属层221和第二高附着金属层223主要是用来与上下层粘粘厚度小可以节约成本,可选的,中间导电层222的厚度可以大于第一高附着金属层221加第二高附着金属层223的厚度。
可选的,其中,中间导电层222底部宽度大于顶部,第一高附着金属层221宽度与中间导电层222底部宽度相同,第二高附着金属层223宽度与中间导电层222顶部宽度相同。中间导电层222底部宽度大于顶部,方便制作,成型稳定,良品率高,第一高附着金属层221宽度与中间导电层222底部宽度相同,第二高附着金属层223宽度与中间导电层222顶部宽度相同,制作方便,中间导电层222与第一高附着金属层221和第二高附着金属层223接触面积最大,粘粘效果更好,其中中间导电层222的截面优选为梯形,特别是等腰梯形。
其中,中间导电层222采用铜、铝、银、金、铬、钼或上述金属的合金制成。铜、铝、银、金、铬、钼或上述金属的合金具有较好的导电性能和较低的电阻特性,能满足显示面板的需求,中间导电层222优选铜或铜合金,性价比最高。
其中,第一高附着金属层221和第二高附着金属层223均采用钼或钼合金。钼或钼合金能实现较好的附着性,一边能与中间导电层222的金属如铜、铝、银、金、铬、钼等较好的粘粘,另一边能与显示面板的其他层如基板1、光阻层、绝缘层4等较好的粘粘,选材方便,制作技术成熟。不需要额外的原材料,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购,不需要额外的设备设置第二高附着金属层223,可以与第一高附着金属层221共用一套设备,后期蚀刻也不需要额外的设备和材料。
第二金属层22与第一金属层21之间设有绝缘层4,绝缘层4材料为氧化硅或氮化硅,可以采用化学气相沉积技术设置绝缘层4,化学气相沉积技术成熟,能够很好的控制氮化硅的使用量,进一步的减低了生产制造成本,与后续步骤设置保护层3的材料和方法相同,在后续在设置保护层3时,不需要额外更换的原材料,也不需要额外更换设备,降低原材料成本、存储成本,物料清单不需要增加新的材料,方便流程管理和采购。
其中,绝缘层4上设有半导体层5,源极和漏极分别设在半导体层5两端上,源极和漏极之间设有沟道6,沟道6底部为半导体层5,沟道6的底部和侧壁上均设有保护层3,进一步的减低了生产制造成本,而且在设置保护层3时,不需要额外更换的原材料,也不需要额外更换设备。
作为本发明的再一个实施例,本实施例公开了一种显示装置背光模组和显示面板。关于显示面板的具体结构和连接关系可参见图1至图6,在此不再一一详述。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。

Claims (10)

1.一种显示面板,其特征在于,所述显示面板包括:
基板;
主动开关阵列;
彩色光阻层,形成于主动开关阵列上;
所述主动开关阵列,包括金属层,所述金属层设置在基板上,所述基板上设有保护层,所述保护层至少设置两层,所述保护层覆盖于所述金属层上,所述保护层对所述金属层和所述彩色光阻层进行分隔,当需要对所述彩色光阻层进行重工时,所述保护层能够更好的对所述金属层进行保护。
2.如权利要求1所述的一种显示面板,其特征在于,所述保护层包括氧化硅层或氮化硅层。
3.如权利要求1所述的一种显示面板,其特征在于,所述保护层包括氮化硅层和氧化硅层;所述氮化硅层和氧化硅层堆叠设置。
4.如权利要求2所述的一种显示面板,其特征在于,所述保护层包括至少两层氮化硅层和两层氧化硅层;所述氮化硅层和氧化硅层交替堆叠设置。
5.如权利要求1所述的一种显示面板,其特征在于,所述金属层包括第一金属层;所述第一金属上覆盖有所述保护层;所述彩色光阻层直接覆盖于所述保护层上。
6.如权利要求5所述的一种显示面板,其特征在于,所述第一金属层包括源极金属层和漏极金属层,所述源极金属层与所述显示面板的源极驱动连接;所述漏极金属层与所述显示面板的像素电极连接;所述保护层覆盖于所述源极金属层和/或漏极金属层上。
7.如权利要求5所述的一种显示面板,其特征在于,所述第一金属层采用铝或铝合金制成。
8.如权利要求5所述的一种显示面板,其特征在于,所述金属层还包括第二金属层,所述第二金属层底部宽度大于顶部,所述第一金属层与显示面板的行扫描驱动连接。
9.如权利要求8所述的一种显示面板,其特征在于,所述第二金属层与所述第一金属层之间设有绝缘层,所述绝缘层材料为氧化硅或氮化硅。
10.一种显示装置,其特征在于,所述显示装置包括背光模组和如权利要求1至9任一项所述的显示面板。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359138A (zh) * 2017-06-22 2017-11-17 深圳市华星光电技术有限公司 一种金属线、阵列基板的制作方法及阵列基板
CN107527870A (zh) * 2017-08-29 2017-12-29 惠科股份有限公司 一种阵列基板的制作方法及其制作设备
US10355026B2 (en) 2017-06-22 2019-07-16 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing metal wire and array substrate using the same
WO2021227154A1 (zh) * 2020-05-14 2021-11-18 深圳市华星光电半导体显示技术有限公司 一种显示面板的制备方法、显示面板及显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107369716B (zh) * 2017-07-17 2021-02-12 京东方科技集团股份有限公司 薄膜晶体管及制作方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104166261A (zh) * 2014-08-08 2014-11-26 深圳市华星光电技术有限公司 一种阵列基板及其制作方法
US20150362794A1 (en) * 2014-06-11 2015-12-17 Boe Technology Group Co., Ltd. Color filter substrate and manufacture method thereof, and display device
CN106229318A (zh) * 2016-08-17 2016-12-14 深圳市华星光电技术有限公司 Coa型阵列基板及其制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040080778A (ko) * 2003-03-13 2004-09-20 삼성전자주식회사 4색 구동 액정 표시 장치 및 이에 사용하는 표시판
ATE476757T1 (de) * 2004-10-21 2010-08-15 Lg Display Co Ltd Organische elektrolumineszente vorrichtung und herstellungsverfahren
TWI413257B (zh) * 2008-01-03 2013-10-21 Au Optronics Corp 薄膜電晶體、主動元件陣列基板以及液晶顯示面板
KR20090075554A (ko) * 2008-01-04 2009-07-08 삼성전자주식회사 액정 표시 장치와 그 제조 방법
CN102722056A (zh) * 2011-03-29 2012-10-10 京东方科技集团股份有限公司 彩色滤光阵列基板及其制造方法和液晶显示面板
TW201321846A (zh) * 2011-11-17 2013-06-01 Au Optronics Corp 具有彩色濾光陣列之畫素陣列基板及顯示面板
TWI573257B (zh) * 2014-06-27 2017-03-01 友達光電股份有限公司 感測裝置
CN104793413A (zh) * 2015-04-29 2015-07-22 昆山龙腾光电有限公司 液晶显示装置及其制作方法
KR102540811B1 (ko) * 2015-12-04 2023-06-07 삼성디스플레이 주식회사 표시 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150362794A1 (en) * 2014-06-11 2015-12-17 Boe Technology Group Co., Ltd. Color filter substrate and manufacture method thereof, and display device
CN104166261A (zh) * 2014-08-08 2014-11-26 深圳市华星光电技术有限公司 一种阵列基板及其制作方法
CN106229318A (zh) * 2016-08-17 2016-12-14 深圳市华星光电技术有限公司 Coa型阵列基板及其制作方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359138A (zh) * 2017-06-22 2017-11-17 深圳市华星光电技术有限公司 一种金属线、阵列基板的制作方法及阵列基板
WO2018233180A1 (zh) * 2017-06-22 2018-12-27 深圳市华星光电半导体显示技术有限公司 一种金属线的制作方法及阵列基板
US10355026B2 (en) 2017-06-22 2019-07-16 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for manufacturing metal wire and array substrate using the same
CN107527870A (zh) * 2017-08-29 2017-12-29 惠科股份有限公司 一种阵列基板的制作方法及其制作设备
CN107527870B (zh) * 2017-08-29 2023-08-25 惠科股份有限公司 一种阵列基板的制作方法及其制作设备
WO2021227154A1 (zh) * 2020-05-14 2021-11-18 深圳市华星光电半导体显示技术有限公司 一种显示面板的制备方法、显示面板及显示装置
US11916086B2 (en) 2020-05-14 2024-02-27 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of display panel, display panel, and display device

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