CN106601804B - 场效应晶体管及其制备方法 - Google Patents

场效应晶体管及其制备方法 Download PDF

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CN106601804B
CN106601804B CN201510667042.5A CN201510667042A CN106601804B CN 106601804 B CN106601804 B CN 106601804B CN 201510667042 A CN201510667042 A CN 201510667042A CN 106601804 B CN106601804 B CN 106601804B
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layer
iii
effect transistor
field
preparation
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CN106601804A (zh
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肖德元
张汝京
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Zing Semiconductor Corp
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Zing Semiconductor Corp
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Priority to CN201510667042.5A priority Critical patent/CN106601804B/zh
Priority to TW105107619A priority patent/TWI578532B/zh
Priority to US15/161,504 priority patent/US9640615B1/en
Priority to US15/452,764 priority patent/US9837517B2/en
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Abstract

本发明提供一种场效应晶体管及其制备方法，场效应晶体管包括：半导体衬底；位于所述半导体衬底中的锗纳米线；包围在锗纳米线四周的第一III‑V化合物层；依次包围在部分所述第一III‑V化合物层四周的势垒层、栅介质层和栅电极；以及位于所述第一III‑V化合物层上，并分别位于所述栅电极两侧的源区和漏区。本发明，势垒层的禁带宽度大于第一III‑V化合物层的禁带宽度，并且，势垒层和第一III‑V化合物层的能带弯曲不同，使得在第一III‑V化合物层靠近势垒层的界面处形成二维电子气，二维电子气迁移率较高，从而场效应晶体管具有更好的电学性能。此外，场效应晶体管为栅极全包围的器件，提高场效应晶体管的电学性能。

Description

场效应晶体管及其制备方法
技术领域
本发明涉及半导体制造技术领域，尤其涉及一种场效应晶体管及其制备方法。
背景技术
高电子迁移率晶体管(HEMT)的基本结构中包括一个调制掺杂异质结，由于组成异质结的两种材料的禁带宽度不同，HEMT的栅极上加上偏压后，在异质结界面处分别形成势阱和势垒，由于极化效应或调制掺杂产生的自由电子积累在异质结靠近界面处的势阱中，形成二维电子气(2-DEG)，二维电子气由于不受电离杂质离子散射的影响，迁移率非常高。并且，因为电子与杂质中心在空间上是分隔开的，在极低温度下也不“冻结”(即不复合)，因此，HEMT有很好的低温性能，可用于低温研究工作(如分数量子Hall效应)中。HEMT是电压控制器件，栅极电压Vg可控制异质结势阱的深度，从而控制势阱中2-DEG的面密度，进而控制器件的工作电流。
发明内容
本发明的目的在于，提供一种场效应晶体管及其制作方法，场效应晶体管为高电子迁移率晶体管，进一步提高器件的性能。
为解决上述技术问题，本发明提供一种场效应晶体管，包括：半导体衬底；位于所述半导体衬底中的锗纳米线；包围在锗纳米线四周的第一III-V化合物层；依次包围在部分所述第一III-V化合物层四周的势垒层、栅介质层和栅电极；以及位于所述第一III-V化合物层上，并分别位于所述栅电极两侧的源区和漏区。
可选的，所述锗纳米线为P型掺杂，所述锗纳米线的截面为圆形，直径为 10nm～100nm。
可选的，所述第一III-V化合物层为N型InGaAs，厚度为10nm～100nm。
可选的，所述势垒层为Si掺杂的InP，Si的掺杂浓度为 1.0×1018cm-3～1.5×1018cm-3，所述势垒层的厚度为50nm～100nm。
可选的，所述栅介质层为高k介质层，所述栅介质层的材料为Al2O3或 TiSiOx，厚度为1nm～5nm。
可选的，所述栅电极为TiN、NiAu或CrAu中的一种。
可选的，所述源区和所述漏区为N型离子掺杂的In0.25Ga0.75As。
可选的，所述场效应晶体管还包括位于所述栅电极两侧的侧墙、位于所述源区上的源电极和位于所述漏区上的漏电极。
作为本发明的另一方面，本发明还提供一种场效应晶体管的制备方法，包括：
提供半导体衬底，所述半导体衬底表面具有沟槽以及悬空于所述沟槽上方的锗纳米线；
形成依次包围在所述锗纳米线四周的第一III-V化合物层和第二III-V化合物层；
在所述第二III-V化合物层中形成凹槽，所述凹槽暴露所述第一III-V化合物层；
在所述凹槽中依次形成势垒层、栅介质层以及栅电极；
在所述栅电极两侧的所述第二III-V化合物层上形成侧墙；
对所述第二III-V化合物层进行N型离子注入，分别形成源区和漏区。
可选的，在所述半导体衬底表面形成所述锗纳米线的步骤包括：
形成一锗硅合金层，所述锗硅合金层覆盖所述半导体衬底；
形成浅沟槽隔离结构，所述浅沟槽隔离结构将所述锗硅合金层分割开；
去除部分所述浅沟槽隔离结构，暴露部分所述锗硅合金层的侧壁；
进行选择性外延，形成多边形结构的锗硅合金层；
进行热氧化，多边形结构的锗硅合金层形成氧化硅层以及包裹在所述氧化硅层中的锗纳米线；
去除所述氧化硅层，形成所述沟槽以及悬空在所述沟槽中的所述锗纳米线；
在氢气中对所述锗纳米线进行热退火；
在所述沟槽中形成一氧化硅层。
可选的，所述锗纳米线为P型掺杂，所述锗纳米线的截面为圆形，直径为 10nm～100nm。
可选的，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述第一III-V化合物层，所述第一III-V化合物层的材料为N型InGaAs，厚度为10nm～100nm。
可选的，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述第二III-V化合物层，所述第二III-V化合物层为In0.25Ga0.75As。
可选的，采用电感耦合等离子体刻蚀所述第二III-V化合物层，形成所述凹槽。
可选的，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述势垒层，所述势垒层为Si掺杂的InP，Si的掺杂浓度为 1.0×1018cm-3～1.5×1018cm-3，所述势垒层的厚度为50nm～100nm。
可选的，采用金属有机化合物化学气相沉积、原子层沉积或等离子体增强化学气相沉积形成所述栅介质层，所述栅介质层为高k介质层，所述栅介质层的材料为Al2O3或TiSiOx，厚度为1nm～5nm。
可选的，采用物理气相沉积、金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述栅电极，所述栅电极为TiN、NiAu或CrAu中的一种。
可选的，所述场效应晶体管的制备方法还包括：在所述源区上形成源电极，在所述漏区上形成漏电极。
可选的，所述源电极和所述漏电极为TiN、NiAu或CrAu中的一种。
本发明提供的场效应晶体管及其制备方法中，势垒层的禁带宽度比第一 III-V化合物层的禁带宽度宽，并且，势垒层和第一III-V化合物层的能带弯曲不同，使得在第一III-V化合物层靠近势垒层的界面处形成二维电子气，二维电子气迁移率较高，从而场效应晶体管具有更好的电学性能。此外，场效应晶体管为栅极全包围的器件，提高场效应晶体管的电学性能。
附图说明
图1为本发明一实施例中的场效应晶体管的剖面结构示意图；
图2为本发明一实施例中制备场效应晶体管的制备方法的流程图；
图3a～图3m为本发明一实施例中制备场效应晶体管各步骤中的剖面结构示意图；
图4为本发明一实施例中的不加偏压时场效应晶体管的能带图；
图5为本发明一实施例中的加正向偏压时N型场效应晶体管的能带图。
具体实施方式
下面将结合示意图对本发明的场效应晶体管及其制备方法进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
本发明的核心思想在于，提供的场效应晶体管中，锗纳米线与第一III-V化合物层形成III-V/锗量子阱的沟道，势垒层的禁带宽度比第一III-V化合物层的禁带宽度宽，并且，势垒层和第一III-V化合物层的能带弯曲不同，使得在第一 III-V化合物层靠近势垒层的界面处形成二维电子气，二维电子气迁移率较高，从而场效应晶体管具有更好的电学性能。此外，场效应晶体管为栅极全包围的器件，提高场效应晶体管的电学性能。
下文结合附图对本发明的场效应晶体管进行详细的描述。本发明提供的场效应晶体管的剖面结构示意图参考图1所示，场效应晶体管包括：半导体衬底 100；位于所述半导体衬底100中的锗纳米线211；包围在锗纳米线211四周的第一III-V化合物层212；依次包围在部分所述第一III-V化合物层212四周的势垒层220、栅介质层231和栅电极232；以及位于所述第一III-V化合物层212 上，并分别位于所述栅电极232两侧的源区241和漏区242。
在本实施例中，所述锗纳米线211为P型掺杂，所述锗纳米线211的截面为圆形，直径为10nm～100nm。所述第一III-V化合物层212的材料为N型 InGaAs，第一III-V化合物层212的厚度为10nm～100nm。锗纳米线211与第一 III-V化合物层212构成N型场效应晶体管的沟道210，即形成III-V/锗量子阱的沟道。
所述势垒层220为Si掺杂的InP，Si的掺杂浓度为1.0×1018cm-3～1.5×1018cm-3，势垒层220的厚度为50nm～100nm。可以理解的是，势垒层220与第一III-V化合物层212之间形成场效应晶体管的异质结结构，势垒层220的禁带宽度比第一III-V化合物层212的禁带宽度宽，并且，当在栅电极上加偏压后，势垒层220 和第一III-V化合物层212的能带弯曲不同，使得在第一III-V化合物层212靠近势垒层220的界面处形成二维电子气(2DEG)，二维电子气迁移率较高，从而场效应晶体管具有更好的传输性能。
所述栅介质层231为高k介质层，例如，所述栅介质层的材料为Al2O3或 TiSiOx，所述栅介质层231的厚度为1nm～5nm。所述栅电极232为TiN、NiAu 或CrAu中的一种。栅介质层231与栅电极232形成场效应晶体管的栅极230。需要说明的是，本发明中，栅极230完全包围在沟道210周围，形成栅极全包围的器件，并且，采用高k材料的的栅介质层，提高场效应晶体管的电学性能
本实施例中，以N型场效应晶体管为例进行说明，所述源区241和漏区242 为N型重离子掺杂的In0.25Ga0.75As，并且，所述N型场效应晶体管还包括位于源区241上的源电极261和位于漏区242上的漏电极262，源电极261将源区 241引出，漏电极262将漏区242引出。
此外，本发明的场效应晶体管中包括位于栅极230两侧的侧墙250，侧墙 250为氧化硅、氮化硅等，侧墙250用于保护栅极230。
作为本发明的另一方面，本发明还提供一种场效应晶体管的制备方法，图2 为场效应晶体管的制备方法的流程图，结合图3a～图3m对场效应晶体管的制备过程进行说明，其具体包括如下步骤：
首先，执行步骤S1，参考图3a所示，提供半导体衬底100，所述半导体衬底100表面具有沟槽以及悬空于所述沟槽上方的锗纳米线。在所述半导体衬底表面形成所述沟槽以及悬空于所述沟槽上的所述锗纳米线的步骤进一步包括：
参考图3a所示，形成一锗硅合金层110，所述锗硅合金层110覆盖所述半导体衬底100；
参考图3b所示，在半导体衬底100中形成浅沟槽隔离结构120，浅沟槽隔离结构120间隔的设置在半导体衬底100中，并且，所述浅沟槽隔离结构120 将所述锗硅合金层110分割开；
参考图3c所示，去除部分所述浅沟槽隔离结构120，暴露部分所述锗硅合金层110的侧壁；
参考图3d所示，进行选择性外延，由于锗硅合金各个晶向上的生长速率的差异，使得锗硅合金形成多边形结构的锗硅合金层110，例如，形成六边形的锗硅合金层110，多边形结构的锗硅合金层便于后续工艺中进行氧化浓缩，形成锗纳米线；
参考图3e所示，进行热氧化，多边形的锗硅合金层110形成氧化硅层130 以及包裹在所述氧化硅层130中的锗纳米线211，热氧化的过程中，硅、锗进行氧化浓缩，使得锗聚集形成锗纳米线，在本实施例中，所述锗纳米线211的截面均为圆形，直径为10nm～100nm，此外，热氧化的过程中，氧化硅层130还包括所述半导体衬底100表面形成氧化硅；
参考图3f所示，去除所述氧化硅层130，形成所述沟槽(图中未示出)以及悬空在所述沟槽中的锗纳米线211；
之后，在氢气中对所述锗纳米线211进行热退火，使得锗纳米线211的表面更加光滑；
参考图3g所示，在所述沟槽中形成一氧化硅层150，防止后续的工艺影响半导体衬底100。
其次，执行步骤S2，参考图3h和图3i所示，其中，图3i是图3h沿AA’方向的剖面图，形成依次包围在所述锗纳米线211四周的第一III-V化合物层212 和第二III-V化合物层270。在本实施例中，采用金属有机化合物化学气相沉积 (Metal organic chemical vapordeposition，MOCVD)、原子层沉积(Atomic layer deposition，ALD)或分子束外延(Molecular beam epitaxy，MBE)形成所述第一III-V化合物层212，所述第一III-V化合物层212的材料为N型InGaAs。采用金属有机化合物化学气相沉积(MOCVD)、原子层沉积(ALD)或分子束外延(MBE)形成所述第二III-V化合物层270，所述第二III-V化合物层270的材料为N型重离子掺杂的In0.25Ga0.75As，厚度为10nm～200nm。
再次，执行步骤S3，参考图3j所示，刻蚀所述第二III-V化合物层270，在所述第二III-V化合物层270形成凹槽280，所述凹槽280暴露所述第一III-V化合物层212。采用电感耦合等离子体(Induced coupling plasma，ICP)刻蚀所述第二III-V化合物层270形成所述凹槽280。
执行步骤S4，参考图3k所示，依次形成势垒层220、栅介质层231以及栅电极232，势垒层220、栅介质层231以及栅电极232依次包围所述凹槽280以及所述第二III-V化合物层270。本实施例中，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述势垒层220，所述势垒层220的材料为 Si掺杂的InP，Si的掺杂浓度为1.0×1018cm-3～1.5×1018cm-3，所述势垒层220的厚度为50nm～100nm。采用金属有机化合物化学气相沉积、原子层沉积或等离子体增强化学气相沉积形成所述栅介电层231，所述栅介电层231的材料高k介质层，例如，所述栅介电层231的材料为Al2O3或TiSiOx，所述栅介电层231的厚度为1nm～5nm。采用物理气相沉积、金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述栅电极232，所述栅电极231为TiN、NiAu或CrAu中的一种。需要说明的是，势垒层220、栅介质层231以及栅电极232完全包围沟道210，栅介质层231以及栅电极232形成场效应晶体管的栅极230，从而形成栅极全包围的器件，提高载流子的迁移率，提高器件的性能。
接着，参考图3I所示，刻蚀栅电极232、所述栅介电层231以及势垒层220，保留凹槽280中以及部分所述第二III-V化合物层270上的栅电极232、所述栅介电层231以及势垒层220。在本实施例中，势垒层220用于调节第一III-V化合物层212中的二维电子气的面密度，从而控制场效应晶体管的工作电流。
执行步骤S5，参考图3m所示，在第二III-V化合物层270上所述栅电极232 的两侧形成侧墙250，侧墙250用于保护栅极230；
执行步骤S6，参考图1所示，对所述第二III-V化合物层270进行N型离子注入，形成源区241和漏区242。本发明中，简化源区241和漏区242的制备方法，形成的非平面场效应晶体管具有更小的寄生电阻，
此外，所述场效应晶体管的制备方法还包括：在源区241上形成源电极261，在所述漏区242上形成漏电极262。所述源电极261、所述漏电极262均为TiN、 NiAu或CrAu中的一种。
参考图4中所示，在栅极230上不加偏压时，场效应晶体管异质结的能带均不发生弯曲。参考图5中所示，在栅极230上上加上正向偏压、源极连接地端时，由于异质结中第一势垒层220的禁带宽度(1.35eV)大于第一III-V化合物层212的禁带宽度(1.0eV)，并且，第一势垒层220和第一III-V化合物层212 的能带弯曲不同，使得导带Ec中的电子进入费米能级Ef以下，从而第一III-V 化合物层212靠近第一势垒层220的界面处形成二维电子气，从而场效应晶体管导通。本发明中，二维电子气作为场效应晶体管的载流子，其迁移率高，从而大大提高场效应晶体管的传输性能。
综上所述，本发明中，势垒层的禁带宽度比第一III-V化合物层的禁带宽度宽，并且，势垒层和第一III-V化合物层的能带弯曲不同，使得在第一III-V化合物层靠近势垒层的界面处形成二维电子气，二维电子气迁移率较高，从而场效应晶体管具有更好的电学性能。此外，场效应晶体管为栅极全包围的器件，提高场效应晶体管的电学性能。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

1.一种场效应晶体管的制备方法，其特征在于，包括：
提供半导体衬底，所述半导体衬底表面具有沟槽以及悬空于所述沟槽上方的锗纳米线；
形成依次包围在所述锗纳米线四周的第一III-V化合物层和第二III-V化合物层；
在所述第二III-V化合物层中形成凹槽，所述凹槽暴露所述第一III-V化合物层；
在所述凹槽中依次形成势垒层、栅介质层以及栅电极，所述势垒层的禁带宽度比所述第一III-V化合物层的禁带宽度宽；
在所述栅电极两侧的所述第二III-V化合物层上形成侧墙；
对所述第二III-V化合物层进行N型离子注入，分别形成源区和漏区。
2.如权利要求1所述的场效应晶体管的制备方法，其特征在于，在所述半导体衬底表面形成所述锗纳米线的步骤包括：
形成一锗硅合金层，所述锗硅合金层覆盖所述半导体衬底；
形成浅沟槽隔离结构，所述浅沟槽隔离结构将所述锗硅合金层分割开；
去除部分所述浅沟槽隔离结构，暴露部分所述锗硅合金层的侧壁；
进行选择性外延，形成多边形结构的锗硅合金层；
进行热氧化，多边形结构的锗硅合金层形成氧化硅层以及包裹在所述氧化硅层中的锗纳米线；
去除所述氧化硅层，形成所述沟槽以及悬空在所述沟槽中的所述锗纳米线；
在氢气中对所述锗纳米线进行热退火；
在所述沟槽中形成一氧化硅层。
3.如权利要求2所述的场效应晶体管的制备方法，其特征在于，所述锗纳米线为P型掺杂，所述锗纳米线的截面为圆形，直径为10nm～100nm。
4.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述第一III-V化合物层，所述第一III-V化合物层的材料为N型InGaAs，厚度为10nm～100nm。
5.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述第二III-V化合物层，所述第二III-V化合物层为In0.25Ga0.75As。
6.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用电感耦合等离子体刻蚀所述第二III-V化合物层，形成所述凹槽。
7.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述势垒层，所述势垒层为Si掺杂的InP，Si的掺杂浓度为1.0×1018cm-3～1.5×1018cm-3，所述势垒层的厚度为50nm～100nm。
8.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用金属有机化合物化学气相沉积、原子层沉积或等离子体增强化学气相沉积形成所述栅介质层，所述栅介质层为高k介质层，所述栅介质层的材料为Al2O3或TiSiOx，厚度为1nm～5nm。
9.如权利要求1所述的场效应晶体管的制备方法，其特征在于，采用物理气相沉积、金属有机化合物化学气相沉积、原子层沉积或分子束外延形成所述栅电极，所述栅电极为TiN、NiAu或CrAu中的一种。
10.如权利要求1所述的场效应晶体管的制备方法，其特征在于，所述场效应晶体管的制备方法还包括：在所述源区上形成源电极，在所述漏区上形成漏电极。
11.如权利要求10所述的场效应晶体管的制备方法，其特征在于，所述源电极和所述漏电极为TiN、NiAu或CrAu中的一种。
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