CN106536124B - 软钎料材料、焊料接头及软钎料材料的制造方法 - Google Patents

软钎料材料、焊料接头及软钎料材料的制造方法 Download PDF

Info

Publication number
CN106536124B
CN106536124B CN201480080357.3A CN201480080357A CN106536124B CN 106536124 B CN106536124 B CN 106536124B CN 201480080357 A CN201480080357 A CN 201480080357A CN 106536124 B CN106536124 B CN 106536124B
Authority
CN
China
Prior art keywords
solder
less
layer
sno
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480080357.3A
Other languages
English (en)
Other versions
CN106536124A (zh
Inventor
川崎浩由
六本木贵弘
相马大辅
佐藤勇
川又勇司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Senju Metal Industry Co Ltd
Original Assignee
Senju Metal Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Senju Metal Industry Co Ltd filed Critical Senju Metal Industry Co Ltd
Publication of CN106536124A publication Critical patent/CN106536124A/zh
Application granted granted Critical
Publication of CN106536124B publication Critical patent/CN106536124B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/16—Metallic particles coated with a non-metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/365—Selection of non-metallic compositions of coating materials either alone or conjoint with selection of soldering or welding materials
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H01L2224/11318—Manufacturing methods by local deposition of the material of the bump connector in liquid form by dispensing droplets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1182—Applying permanent coating, e.g. in-situ coating
    • H01L2224/11826—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/1312—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13157—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/1316—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/1356—Disposition
    • H01L2224/13561—On the entire surface of the core, i.e. integral coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13575—Plural coating layers
    • H01L2224/1358—Plural coating layers being stacked
    • H01L2224/13582—Two-layer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/13686—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/13687—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/053—Oxides composed of metals from groups of the periodic table
    • H01L2924/0544—14th Group

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Powder Metallurgy (AREA)

Abstract

本发明提供可以抑制氧化膜生长的软钎料材料。作为软钎料材料的焊料球1A由软钎料层2和覆盖软钎料层2的覆盖层3构成。软钎料层2为球状，由如下金属材料构成，该金属材料由Sn含量为40％以上的合金构成。或者软钎料层2由Sn含量为100％的金属材料构成。覆盖层3在软钎料层2的外侧形成SnO膜3a，且在SnO膜3a的外侧形成SnO2膜3b。覆盖层3的厚度大于0nm且为4.5nm以下是优选的。另外，焊料球1A的黄色度为5.7以下是优选的。

Description

软钎料材料、焊料接头及软钎料材料的制造方法
技术领域
本发明涉及以Sn为主要成分的软钎料材料、焊料接头及软钎料材料的制造方法。
背景技术
近年来，由于小型信息设备的发达，所搭载的电子部件正在迅速小型化。电子部件根据小型化的要求，为了应对连接端子的窄小化、安装面积的缩小化，正在应用在背面设置有电极的球栅阵列封装(以下称为“BGA”)。
在利用BGA的电子部件中，例如有半导体封装体。在半导体封装体中，具有电极的半导体芯片被树脂密封。半导体芯片的电极上形成有焊料凸块。该焊料凸块通过将焊料球接合于半导体芯片的电极而形成。利用BGA的半导体封装体以各焊料凸块与印刷基板的导电性焊盘接触的方式放置在印刷基板上，利用加热而熔融了的焊料凸块与焊盘接合，从而搭载于印刷基板。
另外，为了使焊料球接合于电极，需要抑制焊料球的表面形成金属氧化膜。另外，在焊料球与助焊剂混合而用作焊膏时，需要抑制保存时的粘度上升。
在此，焊料球表面所形成的氧化膜的膜厚与黄色度存在比例关系。
因此，提出了如下技术：使用黄色度为规定值以下、即氧化膜为规定值以下的焊料球，通过加热破坏氧化膜，从而使其可以接合(例如，参见专利文献1)。该专利文献1中公开的是，首先，挑选制造后表面的黄化度成为10以下的焊料球，并严格管理保存状态，由此防止焊料球表面的黄化，即，抑制焊料球表面的SnO氧化膜的生长，同时在用该焊料球形成的焊料凸块的表面形成SnO氧化膜及SnO2氧化膜。
另外，提出了在焊料球的表面形成规定值的氧化膜，从而可以抑制粘度上升的技术(例如，参见专利文献2)。该专利文献2中公开的是，通过在焊料颗粒表面形成由SnO或以SnO2为主要成分的氧化锡构成的氧化覆膜，可以抑制与助焊剂混合/搅拌而制造的焊料膏制作后的粘度经时上升。
现有技术文献
专利文献
专利文献1:日本特开2009-248156号公报
专利文献2:日本专利第4084657号公报
发明内容
发明要解决的问题
对于以Sn为主要成分的焊料球而言，Sn与空气中的O2发生反应而形成SnO膜。如果该膜厚增加，则软钎焊时难以用助焊剂去除，如果焊料球的表面残留有氧化膜，则润湿性变差。另外，如果氧化膜厚增加，则黄色度上升。有时利用黄色度作为焊料球的外观检査，如果不能抑制氧化膜厚的增加，则焊料球被判断为不适用的可能性变高。
在专利文献1中，通过严格管理保存状态，可抑制焊料球表面的SnO氧化膜生长。另外，专利文献1中，着眼于作为晶质的SnO2氧化膜因伴随焊料球的熔融的内部变形而容易破损，从而使软钎料与电极端子的接合性提高，但除了保存状态的管理以外，完全没有公开利用氧化膜的组成抑制氧化膜生长的内容。进而，关于专利文献2，完全没有公开抑制SnO氧化膜生长的内容。
因此，本发明的目的在于，提供可以抑制氧化膜生长、从而保存性及润湿性良好的软钎料材料、焊料接头及软钎料材料的制造方法。
用于解决问题的方案
本发明人等发现，通过用具有SnO及SnO2的覆盖层覆盖以Sn为主要成分的软钎料层，可以抑制氧化膜生长。需要说明的是，所谓具有SnO及SnO2的覆盖层，是指由以SnO为主要成分的氧化锡构成的氧化覆膜层、及由以SnO2为主要成分的氧化锡构成的氧化覆膜层。在以下的说明中也是同样的。
因此，本发明的第1方面是一种软钎料材料，具备：软钎料层，其包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；和覆盖软钎料层的表面的覆盖层，该软钎料材料为直径1～1000μm的球体，
覆盖层在软钎料层的外侧形成SnO膜，且在SnO膜的外侧形成SnO2膜，覆盖层的厚度大于0nm且为4.5nm以下。
本发明的第2方面如第1方面所述的软钎料材料，其在L*a*b*色度体系中的黄色度为5.7以下。
本发明的第3方面是一种软钎料材料，具备：软钎料层，其包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；和覆盖软钎料层的表面的覆盖层，该软钎料材料为直径1～1000μm的球体，
覆盖层在软钎料层的外侧形成SnO膜，且在SnO膜的外侧形成SnO2膜，所述软钎料材料在L*a*b*色度体系中的的黄色度为5.7以下。
本发明的第4方面如第1方面～第3方面中任一项所述的软钎料材料，软钎料层含有0％以上且低于4％的Ag、0％以上且低于1％的Cu、0ppm以上且低于5ppm的P、0ppm以上且低于20ppm的Ge。
本发明的第5方面如第1方面～第4方面中任一项所述的软钎料材料，软钎料层以使Sn含量成为40％以上的方式，(i)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素和含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％，
或者，
(ii)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，或含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％。
本发明的第6方面如第1方面～第5方面中任一项所述的软钎料材料，其中，所放射的α射线量为0.0200cph/cm2以下。
本发明的第7方面是一种焊料接头，其是使用本发明的第1方面～第6方面中任一项所述的软钎料材料而得到的。
本发明的第8方面是一种软钎料材料的制造方法，包括如下工序：
形成软钎料层的软钎料层形成工序，该软钎料层包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；
氧化膜形成工序，在软钎料层的外侧形成SnO膜，且在SnO膜的外侧形成SnO2膜，从而在软钎料层的表面形成厚度大于0nm且为4.5nm以下的覆盖层，
且制造直径为1～1000μm的球体。
本发明的第9方面如第8方面所述的软钎料材料的制造方法，在氧化膜形成工序中，形成覆盖层表面的L*a*b*色度体系中的黄色度为5.7以下。
本发明的第10方面如第8方面或第9方面所述的软钎料材料的制造方法，氧化膜形成工序中，对软钎料层的表面照射O2-Ar等离子体。
发明的效果
对于本发明而言，在覆盖软钎料层的覆盖层中，在SnO膜的外侧形成SnO2膜时，可抑制Sn和空气中的O2发生反应，可抑制SnO膜及SnO2膜生长，可以抑制膜厚的增加，另外，通过抑制膜厚的增加，可抑制黄变，可以将L*a*b*色度体系中的黄色度抑制在5.7以下。由此，可以提供保存性及润湿性良好的软钎料材料、及使用有该软钎料材料的焊料接头。
附图说明
图1是示出作为本实施方式的软钎料材料的一个例子的焊料球的示意性结构的截面图。
图2A是示意性地示出作为本实施方式的软钎料材料的一个例子的焊料球的制造方法的截面图。
图2B是示意性地示出作为本实施方式的软钎料材料的一个例子的焊料球的制造方法的截面图。
图2C是示意性地示出作为本实施方式的软钎料材料的一个例子的焊料球的制造方法的截面图。
具体实施方式
下面，对本发明的软钎料材料、焊料接头及软钎料材料的制造方法进行说明。
＜软钎料材料的构成例＞
图1是示出作为本实施方式的软钎料材料的一个例子的焊料球的示意性结构的截面图。需要说明的是，本说明书中，只要没有特别指定，涉及软钎料材料的组成的单位(ppm、ppb、及％)表示相对质量的比例(质量ppm、质量ppb、及质量％)。
本实施方式的焊料球1A由软钎料层2和覆盖软钎料层2的覆盖层3构成。软钎料层2为球状，由Ag为0％以上且低于4％、Cu为0％以上且低于1％、Sn含量为40％以上的合金材料构成。一般情况下，通过添加规定量的P或Ge可提高抗氧化性，但在本发明中可以不添加这些元素来提高抗氧化性。然而，即使添加低于5ppm的P、低于20ppm的Ge也不会损害本发明的效果。因此，可以不添加P或Ge，如果添加P或Ge，则设定为P的添加量低于5ppm、Ge的添加量低于20ppm。因而，P的添加量设为0ppm以上且低于5ppm、Ge的添加量设为0ppm以上且低于20ppm。
另外，软钎料层2以使Sn含量为40％以上的方式，含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，及含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％。
或者，含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，或者含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％。
进而，软钎料层2可以由Sn含量为100％的金属材料构成。需要说明的是，从软钎料层2放射出的α射线量优选为0.0200cph/cm2以下。
覆盖层3在软钎料层2的外侧形成SnO膜3a，且在SnO膜3a的外侧形成SnO2膜3b。由于焊料球1A与空气接触，形成于软钎料层2的表面的SnO层随着时间经过而膜厚变厚。另外，如果膜厚变厚，则焊料球1A的表面发生黄变。
与此相对，如果在SnO膜3a的外侧形成SnO2膜3b，则可抑制Sn与空气中的O2的反应，抑制SnO膜3a及SnO2膜3b本身的生长，结果可抑制膜厚的增加。另外，通过抑制膜厚的增加，可抑制黄变，可保持与构成软钎料层2的金属材料所持有的颜色接近的规定银白色。
焊料球1A的直径优选为1～1000μm。另外，覆盖层3的厚度优选为大于0nm(0nm是指不含有)且为4.5nm以下。如果覆盖层3的厚度超过4.5nm，则焊接时难以用助焊剂去除覆盖层3，润湿性变差。
另外，焊料球1A的黄色度b*优选为5.7以下。在管理制造、保存的焊料球1A时，有时会利用黄色度。这是因为，所谓黄色度高，是指SnO的膜厚较厚，黄色度超过规定值的焊料球可以作为不适用的焊料球排除。
对于亮度及黄色度，使用KONICA MINOLTA制造的CM-3500d2600d型分光测色计，在D65光源、10度视野条件下依据JIS Z 8722“颜色的测定方法－反射及透射物体颜色”测定光谱透射率，由色彩值(L*、a*、b*)求出亮度及黄色度。
需要说明的是，色彩值(L*、a*、b*)如JIS Z 8729“颜色的表示方法-L*a*b*色度体系及L*U*V*色度体系”中规定所述。
需要说明的是，对于软钎料材料的形状，在本例中设为球状，但也可以是圆筒状、四角柱状等其它形状。另外，由焊料球1A放射出的α射线量也优选为0.0200cph/cm2以下。
＜软钎料材料的制造方法例＞
图2A、图2B及图2C是示意性地示出作为本实施方式的软钎料材料的一个例子的焊料球的制造方法的截面图。
在软钎料层形成工序中，如图2A所示，用上述的由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料形成球状的软钎料层2。对于软钎料层形成工序，在本例中，可使用滴加熔融的金属材料而使其硬化为球状的滴加法。
在氧化膜形成工序中，如图2B所示，在通过软钎料层2的表面与空气接触而生成的SnO膜3a的表面上，如图2C所示，形成SnO2膜3b。作为形成氧化膜的方法，可以使用目前公知的方法。例如，可举出蒸镀法、溅射法、等离子体照射法等。在本例中，使用公知的大气压等离子体装置通过等离子体照射法来实现氧化膜形成工序。等离子体照射法是在滴加熔融的金属而至硬化为止的期间，照射高浓度的O2-Ar等离子体。
通过以上的制造方法，可制造在具有规定直径的软钎料层2的表面形成有覆盖层3的焊料球1A。覆盖层3a的厚度大于0nm且为4.5nm以下，在软钎料层2的外侧形成SnO膜3a，且在SnO膜3a的外侧形成SnO2膜3b。另外，焊料球1A的黄色度为5.66以下。
＜实施例＞
用包含3％的Ag、0.5％的Cu、余量为Sn的金属材料通过滴加法制作相当于软钎料层2的金属球。在该金属球上通过等离子体照射法形成相当于覆盖层3的覆膜，从而制成实施例的焊料球。等离子体照射法是在滴加熔融的金属而至硬化为止的期间，照射高浓度的O2-Ar等离子体。
作为比较例，通过自然氧化制成表面形成有SnO层的焊料球。
将实施例和比较例的焊料球在200℃下加热，以黄色度b*值观察氧化行为，将结果示于表1。
[表1]
经过时间(分钟) 0 10 15 30 60 90
实施例黄色度b* 3.24 3.90 4.60 5.66 10.18 15.98
比较例黄色度b* 3.63 10.21 13.15 18.79 24.32 25.35
如表1所示，相对于比较例的焊料球的黄色度b*值快速上升，实施例的焊料球通过利用SERA(Sequential Electrochemical Reduction Analysis：循序电化学还原分析法)进行定性分析可判定，通过在以Sn为主要成分的软钎料层的外侧形成SnO层，且在SnO层的外侧形成SnO2层，可抑制氧化膜厚生长。
另外，仅供参考，在比较例中，为了分离氧化工序和加热试验工序，尝试在200℃下进行1分钟的加热，然后，冷却后进行再次加热，与工序分离前同样地黄色度b*值快速上升。
接着，作为上述的实施例的焊料球，通过FE-AES(场发射型俄歇电子能谱法)定量分析在200℃下加热15分钟的实施例1的焊料球、在200℃下加热30分钟的实施例2的焊料球的氧化膜厚，并且，通过SERA进行定性分析，确认形成的氧化膜的成分为Sn的氧化物(SnO及SnO2)。
需要说明的是，通过FE-AES实施定量分析是因为，SERA的分析值容易分散，虽然能够定性分析，但对于作为定量分析讨论具体的氧化膜厚而言，FE-AES分析更容易显示一定值。在以下的装置及条件下测定氧化膜的膜厚。需要说明的是，通过SiO2换算求出氧化膜厚测定值。
测定装置：ULVAC-PHI，INC制造扫描型FE俄歇电子能谱分析装置
测定条件：Beam Voltage：10kV，试样电流：10nA(使用Ar离子枪的溅射深度的测定方法依照ISO/TR 15969。)
将氧化膜厚和黄色度的测定结果示于表2。
[表2]
经过时间(分钟) 黄色度b* 膜厚(nm)
实施例1 15 4.60 2.6
实施例2 30 5.66 4.1
如表2所示，可知氧化膜厚可控制在5nm以下，且可知覆盖层的膜厚为4.5nm以下是优选的。另外，可知黄色度可控制在10以下，由表2的结果可知，黄色度设为5.7以下是优选的。
接着，用上述的实施例和比较例的焊料球制作变更膜厚、黄色度的焊料球，检验保存性和润湿性。
各实施例的焊料球的膜厚为4.5nm以下，实施例1的焊料球的膜厚为2.6nm，实施例2的焊料球的膜厚为4.1nm，实施例3的焊料球的膜厚为1.5nm。
另外，各实施例的焊料球的黄色度为5.7以下，实施例1的焊料球的黄色度为4.60，实施例2的焊料球的黄色度为5.66，实施例3的焊料球的黄色度为3.90。
另一方面，各比较例的焊料球的膜厚为10nm以上，且黄色度为10以上，比较例1的焊料球的黄色度为10.21，比较例2的焊料球的黄色度为13.15。
将检验结果示于表3。
[表3]
膜厚(nm) 黄色度b* 保存性 润湿性
实施例1 2.6 4.60 ○ ○
实施例2 4.1 5.66 ○ ○
实施例3 1.5 3.90 ○ ○
比较例1 ＞10 10.21 × ×
比较例2 ＞10 13.15 × ×
如表3所示，实施例1～实施例3的焊料球的保存性及润湿性均满足规定的条件，另一方面，各比较例的焊料球的保存性及润湿性均不满足规定的条件。
因而，可知覆盖层的厚度大于0nm且为4.5nm以下、黄色度b*为5.7以下的焊料球的保存性及润湿性均提高。
需要说明的是，对于本发明的软钎料材料，通过用焊料膏电接合于电极，可以用于电子部件的焊料接头。
附图标记说明
1A···焊料球
2···软钎料层
3···覆膜层
3a···SnO膜
3b···SnO2膜

Claims (14)

1.一种软钎料材料，其特征在于，具备：软钎料层，其包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；和覆盖所述软钎料层的表面的覆盖层，该软钎料材料为直径1～1000μm的球体，
所述覆盖层在所述软钎料层的外侧形成SnO膜，且在所述SnO膜的外侧形成SnO2膜，所述覆盖层的厚度大于0nm且为4.5nm以下。
2.根据权利要求1所述的软钎料材料，其特征在于，其在L*a*b*色度体系中的黄色度为5.7以下。
3.一种软钎料材料，其特征在于，具备：软钎料层，其包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；和覆盖所述软钎料层的表面的覆盖层，该软钎料材料为直径1～1000μm的球体，
所述覆盖层在所述软钎料层的外侧形成SnO膜，且在所述SnO膜的外侧形成SnO2膜，
所述软钎料材料在L*a*b*色度体系中的黄色度为5.7以下。
4.根据权利要求1～权利要求3中任一项所述的软钎料材料，其特征在于，所述软钎料层含有0％以上且低于4％的Ag、0％以上且低于1％的Cu、0ppm以上且低于5ppm的P、0ppm以上且低于20ppm的Ge。
5.根据权利要求1～权利要求3中任一项所述的软钎料材料，其特征在于，所述软钎料层以使Sn含量成为40％以上的方式，
(i)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，及含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％；
或者，
(ii)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，或含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％。
6.根据权利要求4所述的软钎料材料，其特征在于，所述软钎料层以使Sn含量成为40％以上的方式，
(i)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，及含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％；
或者，
(ii)含有以整体计低于1％或者分别低于1％的选自Ni、Co、Fe、Sb中的至少一种元素，或含有以整体计低于40％的选自In、Bi中的至少一种以上元素或者In、Bi中的一者低于40％、另一者低于20％。
7.根据权利要求1～权利要求3中任一项所述的软钎料材料，其特征在于，从软钎料层放射出的α射线量为0.0200cph/cm2以下。
8.根据权利要求4所述的软钎料材料，其特征在于，从软钎料层放射出的α射线量为0.0200cph/cm2以下。
9.根据权利要求5所述的软钎料材料，其特征在于，从软钎料层放射出的α射线量为0.0200cph/cm2以下。
10.根据权利要求6所述的软钎料材料，其特征在于，从软钎料层放射出的α射线量为0.0200cph/cm2以下。
11.一种焊料接头，其特征在于，其是使用权利要求1～10中任一项所述的软钎料材料而得到的。
12.一种软钎料材料的制造方法，其特征在于，包括如下工序：
形成软钎料层的软钎料层形成工序，该软钎料层包含由Sn含量为40％以上的合金构成的金属材料或Sn含量为100％的金属材料；
氧化膜形成工序，在所述软钎料层的外侧形成SnO膜，且在所述SnO膜的外侧形成SnO2膜，从而在所述软钎料层的表面形成厚度大于0nm且为4.5nm以下的覆盖层，
且制造直径为1～1000μm的球体。
13.根据权利要求12所述的软钎料材料的制造方法，其特征在于，在所述氧化膜形成工序中，形成所述覆盖层表面的L*a*b*色度体系中的黄色度为5.7以下。
14.根据权利要求12或权利要求13所述的软钎料材料的制造方法，其特征在于，所述氧化膜形成工序中，对所述软钎料层的表面照射O2-Ar等离子体。
CN201480080357.3A 2014-08-29 2014-08-29 软钎料材料、焊料接头及软钎料材料的制造方法 Active CN106536124B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/072803 WO2016031067A1 (ja) 2014-08-29 2014-08-29 はんだ材料、はんだ継手及びはんだ材料の製造方法

Publications (2)

Publication Number Publication Date
CN106536124A CN106536124A (zh) 2017-03-22
CN106536124B true CN106536124B (zh) 2018-03-20

Family

ID=54545783

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480080357.3A Active CN106536124B (zh) 2014-08-29 2014-08-29 软钎料材料、焊料接头及软钎料材料的制造方法

Country Status (8)

Country Link
US (1) US10173287B2 (zh)
EP (1) EP3187299B1 (zh)
JP (1) JP5807733B1 (zh)
KR (1) KR101781777B1 (zh)
CN (1) CN106536124B (zh)
PT (1) PT3187299T (zh)
TW (1) TWI543835B (zh)
WO (1) WO2016031067A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6892568B2 (ja) * 2015-12-21 2021-06-23 ニホンハンダ株式会社 表面性に優れたＳｎを主成分とするはんだ合金の選別方法
JP5935938B1 (ja) * 2015-12-28 2016-06-15 千住金属工業株式会社 導電接合シートおよび導電接合シートの製造方法。
CN111344106B (zh) 2017-11-24 2022-03-04 千住金属工业株式会社 软钎料材料、焊膏和钎焊接头
JP7184759B2 (ja) * 2017-12-22 2022-12-06 積水化学工業株式会社 導電材料、導電材料の保管方法、導電材料の製造方法及び接続構造体の製造方法
KR20200098486A (ko) 2017-12-22 2020-08-20 세키스이가가쿠 고교가부시키가이샤 땜납 입자, 도전 재료, 땜납 입자의 보관 방법, 도전 재료의 보관 방법, 도전 재료의 제조 방법, 접속 구조체 및 접속 구조체의 제조 방법
JP6439893B1 (ja) * 2018-05-25 2018-12-19 千住金属工業株式会社 ハンダボール、ハンダ継手および接合方法
CN109290696A (zh) * 2018-09-26 2019-02-01 深圳市安臣焊锡制品有限公司 一种性能稳定耐腐蚀型焊锡锡球及其制备方法
JP6573019B1 (ja) 2018-10-25 2019-09-11 千住金属工業株式会社 フラックス及びソルダペースト
JP6579253B1 (ja) * 2018-11-09 2019-09-25 千住金属工業株式会社 ハンダボール、ハンダ継手および接合方法
WO2020241319A1 (ja) 2019-05-27 2020-12-03 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、およびはんだ継手
KR102493931B1 (ko) 2019-05-27 2023-02-06 센주긴조쿠고교 가부시키가이샤 납땜 합금, 솔더 페이스트, 납땜 볼, 솔더 프리폼, 납땜 조인트, 및 회로
US11813686B2 (en) 2019-05-27 2023-11-14 Senju Metal Industry Co., Ltd. Solder alloy, solder paste, solder ball, solder preform, solder joint, and substrate
JP6810375B1 (ja) 2019-05-27 2021-01-06 千住金属工業株式会社 はんだ合金、ソルダペースト、はんだボール、ソルダプリフォーム、はんだ継手、車載電子回路、ｅｃｕ電子回路、車載電子回路装置、およびｅｃｕ電子回路装置
JP6761199B1 (ja) * 2019-10-25 2020-09-23 千住金属工業株式会社 核材料、電子部品及びバンプ電極の形成方法
TWI789165B (zh) * 2021-12-14 2023-01-01 昇貿科技股份有限公司 無鉛無銅錫合金與用於球柵陣列封裝的錫球

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084657B2 (ja) * 2002-12-27 2008-04-30 三井金属鉱業株式会社 はんだペースト用はんだ粉
JP2009248156A (ja) * 2008-04-08 2009-10-29 Hitachi Metals Ltd はんだボール、はんだ層及びはんだバンプ並びにそれらの形成方法
JP2009275240A (ja) * 2008-05-12 2009-11-26 Koki:Kk 鉛フリーＳｎ−Ａｇ系半田合金又は半田合金粉末
WO2010061795A1 (ja) * 2008-11-27 2010-06-03 日立電線株式会社 太陽電池用リード線及びその製造方法、保管方法、並びに太陽電池

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5255840A (en) * 1989-12-26 1993-10-26 Praxair Technology, Inc. Fluxless solder coating and joining
JPH0484657A (ja) 1990-07-25 1992-03-17 Toyota Motor Corp マグネシウム砂型低圧鋳造法
US6805279B2 (en) * 2002-06-27 2004-10-19 Taiwan Semiconductor Manufacturing Co., Ltd. Fluxless bumping process using ions
US6821813B2 (en) * 2002-12-19 2004-11-23 Taiwan Semiconductor Manufacturing Co., Ltd. Process for bonding solder bumps to a substrate
US7361972B2 (en) * 2006-03-20 2008-04-22 Taiwan Semiconductor Manufacturing Co., Ltd. Chip packaging structure for improving reliability
US7749887B2 (en) * 2007-12-18 2010-07-06 Micron Technology, Inc. Methods of fluxless micro-piercing of solder balls, and resulting devices
US9773744B2 (en) * 2011-07-12 2017-09-26 Globalfoundries Inc. Solder bump cleaning before reflow
KR101283580B1 (ko) * 2011-12-14 2013-07-05 엠케이전자 주식회사 주석계 솔더 볼 및 이를 포함하는 반도체 패키지
JP2013211508A (ja) * 2012-03-01 2013-10-10 Nec Corp Ｌｓｉパッケージ及びｌｓｉパッケージの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084657B2 (ja) * 2002-12-27 2008-04-30 三井金属鉱業株式会社 はんだペースト用はんだ粉
JP2009248156A (ja) * 2008-04-08 2009-10-29 Hitachi Metals Ltd はんだボール、はんだ層及びはんだバンプ並びにそれらの形成方法
JP2009275240A (ja) * 2008-05-12 2009-11-26 Koki:Kk 鉛フリーＳｎ−Ａｇ系半田合金又は半田合金粉末
WO2010061795A1 (ja) * 2008-11-27 2010-06-03 日立電線株式会社 太陽電池用リード線及びその製造方法、保管方法、並びに太陽電池

Also Published As

Publication number Publication date
PT3187299T (pt) 2020-10-29
KR101781777B1 (ko) 2017-09-25
EP3187299A1 (en) 2017-07-05
TWI543835B (zh) 2016-08-01
US20170252871A1 (en) 2017-09-07
JPWO2016031067A1 (ja) 2017-04-27
JP5807733B1 (ja) 2015-11-10
CN106536124A (zh) 2017-03-22
EP3187299A4 (en) 2018-12-19
WO2016031067A1 (ja) 2016-03-03
KR20170010012A (ko) 2017-01-25
TW201622867A (zh) 2016-07-01
EP3187299B1 (en) 2020-10-14
US10173287B2 (en) 2019-01-08

Similar Documents

Publication Publication Date Title
CN106536124B (zh) 软钎料材料、焊料接头及软钎料材料的制造方法
US10639749B2 (en) Cu core ball, solder joint, solder paste and formed solder
EP3165323B1 (en) Solder alloy, solder ball, chip solder, solder paste and solder joint
CN107073656A (zh) 软钎焊材料、焊膏、成形焊料、钎焊接头以及软钎焊材料的管理方法
KR102036959B1 (ko) Cu 볼을 전극에 접합하는 방법 및 Cu 볼을 선정하는 방법
JP5071802B2 (ja) はんだボール、はんだ層及びはんだバンプ
CN110524137B (zh) 焊料球、钎焊接头和接合方法
US20190376161A1 (en) Cu Core Ball, Solder Joint, Solder Paste and Formed Solder
CN111168274B (zh) 焊料球、钎焊接头和接合方法
US11185950B2 (en) Cu ball, Osp-treated Cu ball, Cu core ball, solder joint, solder paste, formed solder, and method for manufacturing Cu ball
JP6572998B1 (ja) Ｃｕ核ボール、はんだ継手、はんだペースト及びフォームはんだ
JP4338497B2 (ja) はんだ被覆ボールの製造方法
WO2022085365A1 (ja) 半導体装置用Ａｇ合金ボンディングワイヤ
JP2019214761A (ja) Ｃｕ核ボール、はんだ継手、はんだペースト及びフォームはんだ
JP2013183094A (ja) 電子部品の実装方法及び半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant