CN106486422B - 装备有导电层的电子装置及其制造方法 - Google Patents

装备有导电层的电子装置及其制造方法 Download PDF

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CN106486422B
CN106486422B CN201610146094.2A CN201610146094A CN106486422B CN 106486422 B CN106486422 B CN 106486422B CN 201610146094 A CN201610146094 A CN 201610146094A CN 106486422 B CN106486422 B CN 106486422B
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package block
integrated circuit
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CN106486422A (zh
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D·奥彻雷
L·马雷夏尔
L·施瓦茨
Y·因布斯
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STMicroelectronics International NV
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STMicroelectronics Alps SAS
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Abstract

一种电子装置包括具有安装面和安装在安装面上的集成电路芯片的支撑板。封装块嵌入集成电路芯片，封装块在支撑板的安装面上延伸在集成电路芯片之上并围绕集成电路芯片。封装组块包括正面，具有穿过封装块以暴露电接触的至少一部分的孔。由导电材料制成的层填充孔以形成至电接触的电连接并且进一步延伸在封装块的正面之上。

Description

装备有导电层的电子装置及其制造方法
优先权
本申请要求享有2015年8月28日提交的法国专利申请No.1557998的优先权，该申请的公开内容在此通过引用的方式并入本文。
技术领域
本发明涉及电子装置的领域。
背景技术
通常是平行立面体形状的已知电子装置包括支撑板，包括电子连接网络，安装在支撑板一个面上的集成电路芯片，以及芯片嵌入其中的封装块。芯片由插入在支撑板与芯片之间的电连接元件(诸如连接球之类)或者由嵌入在封装块中的电连接引线而连接至支撑板的网络。
这些电子装置安装在印刷电路板上，通常借由诸如连接球之类的电连接元件的方式，连接了支撑板的电连接网络与印刷电路板的电连接网络。
当芯片产生将要发送的射频信号时或者当它们处理所接收的射频信号时，发送或接收天线制造在印刷电路板上。电信号沿着由印刷电路板的电连接网络的电线、在印刷电路板和支撑板之间的电连接元件、支撑板的电连接网络的电线以及在支撑板之间的电连接元件所构成的非常长的电阻性路径前进。这些路径此外依赖于由制造引起的互连的质量。
当用于在吉赫兹量级或更大的、或者实际上远大于吉赫兹的频率下传输射频信号的天线的所需尺寸变得减小时，上文中的设置明显地构成障碍。
发明内容
根据一个实施例，提出了一种电子装置，电子装置包括：展现安装面的支撑板，安装在支撑板的安装面上的至少一个集成电路芯片，其中嵌入了芯片的封装块，该封装块在支撑板的安装面上在芯片之上并在芯片周围延伸并且展现正面，穿过封装块并且至少部分地暴露支撑板的安装面或芯片的电接触的至少一个穿通孔，以及延伸在封装块的正面之上并且连接至孔中电接触的、由导电材料制成的至少一个层。
电接触可以成型在支撑板的安装面上，远离芯片的周边。
电接触可以成型在芯片的正面上。
封装块可以展现在正面中的至少一个沟槽，导电层在其中延伸。
也提出了一种用于制造电子装置的方法，其中电子装置由主电子装置构成，其包括支撑板、安装在支撑板的安装面上的集成电路芯片、以及在芯片之上并且在支撑板的安装面上的芯片周围延伸的封装块，封装块展现平行于支撑板的正面。
该方法包括：制造穿过主电子装置的封装块的孔，该孔从正面直至至少部分地暴露电接触；在封装块的正面的至少一个区域上并且在孔中沉积导电液体或膏状材料；以及硬化导电材料，以便于制造连接至电接触的导电层。
方法可以包括：在封装块的正面中制造至少一个沟槽，该沟槽形成在孔中；导电材料随后沉积在该沟槽中。
方法可以包括：制造至少两个孔，该至少两个孔从正面穿过主电子装置的封装块，直至至少部分地暴露两个电接触；在封装块的正面的至少一个区域上以及在孔中沉积导电液体或膏状材料，以便于制造连接至电接触的导电层。
附图说明
现在将借由附图所示的示例性实施例的方式描述电子装置及它们的制造模式，其中：
图1展现了穿过电子装置的截面；
图2展现了从图1的电子装置之上的视图；
图3以截面图展现了图1的电子装置的制造步骤；
图4以截面图展现了图1的电子装置的另一制造步骤；
图5以截面图展现了图1的电子装置的另一制造步骤；
图6以截面图展现了图1的电子装置的另一制造步骤；
图7展现了穿过另一电子装置的截面图；以及
图8展现了穿过另一电子装置的截面图。
具体实施方式
如图1和图2中所示，根据示例性实施例，最终的电子装置1包括支撑板2，安装在支撑板2的正安装面5上的集成电路芯片4，以及封装块6，支撑板2包括电连接网络3，在封装块6中嵌入芯片4，并且封装块6在支撑板2的安装面5上的芯片4周围、在芯片4之上延伸。以此方式，电子装置1获得了平行六面体的形式。
根据所展现的一个变形实施例，集成电路芯片4借由电连接元件7(诸如连接球)的方式而安装在支撑板2的安装面5上，电连接元件选择性地连接芯片4和电连接网络3。根据另一变形实施例，芯片4可以粘合在支撑板2的安装面5上并且由嵌入在封装块6中的电连接引线而连接至电连接网络3。
根据所展现的一个变形实施例，封装块6展现了穿通孔8，穿通孔8从该块的正面9、平行于支撑板2而成型，直至暴露成型在接触板的安装面5上的电连接网络的电接触10。穿通孔8被定位成远离芯片4的周围并且远离主封装块6的周围以及在它们之间。
在封装块6的正面9中成型狭长的沟槽11，其在孔8中形成。例如，沟槽11可以越过芯片4并且远离芯片4。
封装块6装备具有由导电材料制成的层12，其延伸在其正面9的区域之上并且近似地填充了穿通孔8以便于连接至该孔中的电接触10。
更确切地，导电层12延伸在沟槽11中以便于近似填充该沟槽11。层12由粘附效应被保持在封装块6上。
导电层12可以由包括导电金属颗粒的硬化树脂制成。
此外，电子装置1可以装备具有用于外部电连接3a的元件，诸如连接球，其被布置在成型于支撑板2的与安装面5相反的面2a上的电连接网络3的电接触3b上，这些电接触3b选择性地连接至支撑板2的电连接网络3。
最终的电子装置1可以以以下方式制造。
如图3中所示，使用预制造的主电子装置13，其包括支撑板2，如上所述安装的芯片4以及封装块6，封装块6展现了完全平坦的正面9。
如图4中所示，产生孔8和狭长的沟槽11。
接着，根据图5中所示变形实施例，由液体或膏状材料(也即能够蠕动或流动)制成的导电层12借由喷射器14而沉积在孔8和沟槽11中，所沉积的材料的量能够近似地填充孔8和沟槽11，沟槽11构成了对材料蠕动的阻挡层。
或者，根据图6中所示的另一变形实施例，沉积大幅度填充了孔8和沟槽11的导电材料15的量，并且通过在封装块6的正面9之上移动刮刀16来借由刮刀16而进行该沉积材料15的刮削，以便于仅留下导电层12。
接着，例如在辐射的作用下进行沉积层12的硬化。
如图7中所示，根据另一示例性实施例，最终的电子装置17不同于之前所述的电子装置1之处在于：这次，导电层12直接地连接至被提供在芯片4的正面19上的特殊电接触18。特殊电接触18可以通过形成穿过集成电路芯片4的衬底的电连接而得到，已知名为TSV(“穿硅通孔”)。
在该示例性实施例中，等价于参照图4所述的制造步骤在于：在位于芯片4之上的位置中穿过封装块6制造孔20，以便于暴露电接触18，并且制造暴露在该孔20中形成的沟槽21。制造导电层12的以下步骤等价于参照图5和图6所述的那些。
刚刚已经描述了的电子装置可以从在共用支撑平板上的集体制造而得到。封装块和额外的封装块可以通过散布液体材料(例如环氧树脂)并随后硬化该材料而获得。
刚刚已经描述的电子装置可以从在共用支撑平板上集体制造而得到，如微电子领域中所已知的那样。
当然，导电层12可以展现任何所需的拓扑形状。
刚刚已经描述的电子装置的导电层12可以有利地构成用于在非常高频率(达到吉赫兹或大于吉赫兹，或实际上数百吉赫兹)下发送/接收射频信号的电磁天线，经由支撑板2的电连接网络(图1－图2)或直接地(图7)由电短路连接路径而连接至芯片4。
但是，根据图8中所示变形实施例，例如以条带形式制造的导电层12可以构成额外的无源电子部件，诸如电阻或扼流圈，其终端可以经由电连接网络3和/或直接地连接至芯片4，由此构成了电桥。
因此，该导电层12的终端可以经由以等价于之前所述的方式从其正面穿过封装块6而成型的两个孔22和23而连接至成型在支撑板2的正面上、或在芯片4的正面上、或者一个在支撑板2的正面上而另一个在芯片的正面上的电接触24和25。

Claims (9)

1.一种电子装置，包括：
支撑板，具有安装面；
集成电路芯片，被安装在所述支撑板的所述安装面上；
封装块，嵌入了所述集成电路芯片，所述封装块在所述集成电路芯片之上并且在所述支撑板的所述安装面上的所述集成电路芯片周围延伸，所述封装块进一步具有正面；
孔，穿过所述封装块并且至少部分地暴露所述支撑板的所述安装面上的电接触；以及
由包含导电金属颗粒的树脂制成的层，其在所述封装块的所述正面之上和在所述孔之内延伸，并且连接至所述孔中的所述电接触。
2.根据权利要求1所述的装置，其中，在所述支撑板的安装面上的所述电接触被定位成远离导电集成电路芯片的周围。
3.根据权利要求1所述的装置，其中，所述封装块包括在所述正面中的沟槽，以及其中所述层位于所述沟槽内以形成导电层。
4.一种电子装置，包括：
支撑板，具有安装面；
安装在所述支撑板的所述安装面上的集成电路芯片；
封装块，嵌入了所述集成电路芯片，所述封装块在所述集成电路芯片之上并且在所述支撑板的安装面上的集成电路芯片周围延伸，所述封装块还具有正面；
孔，穿过所述封装块并且至少部分地暴露位于所述集成电路芯片的正面上的电接触；以及
由包含导电金属颗粒的树脂制成的层，所述层在所述封装块的所述正面之上和在所述孔之内延伸，并且连接至所述孔中的电接触。
5.根据权利要求4所述的电子装置，
其中所述封装块包括在所述正面中的槽，以及其中所述层被定位在所述槽内以形成导电层。
6.一种电子装置，包括：
封装块，嵌入集成电路芯片，所述封装块包括至少部分地暴露第一电接触的第一开口；以及
由包含导电金属颗粒的树脂制成的层，所述层在所述封装块的正面之上并且在所述第一开口中延伸，并且连接至在所述第一开口中的所述第一电接触。
7.根据权利要求6所述的装置，其中，所述层完全地填充所述第一开口。
8.根据权利要求6所述的装置，其中，所述第一电接触是在支撑衬底上的接触，所述集成电路芯片被安装至所述支撑衬底。
9.根据权利要求6所述的装置，其中，所述封装块进一步包括至少部分地暴露第二电接触的第二开口；以及其中所述层在所述封装块的正面之上延伸以将所述第一电接触电连接至所述第二电接触。
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