CN108022909B - 在电子芯片与载体衬底之间形成电连接的方法和电子器件 - Google Patents
在电子芯片与载体衬底之间形成电连接的方法和电子器件 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 21
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 22
- 239000003989 dielectric material Substances 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
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Abstract
本公开涉及在电子芯片与载体衬底之间形成电连接的方法和电子器件。电连接线连接电子芯片的电连接焊盘与载体衬底的电连接焊盘,该电子芯片安装至该载体衬底。介电层围绕键合接线并且至少覆盖该电子芯片和该载体衬底的一部分。液体导电材料沉积在该介电层上并且然后硬化以形成围绕在该键合接线处的该介电层的局部导电屏蔽。
Description
优先权要求
本申请要求于2016年11月3日提交的第1660622号法国专利申请的优先权权益,该申请的公开内容通过引用以其全文结合在此。
技术领域
实施例涉及电子器件领域并且更具体地涉及包括安装在载体衬底上的电子芯片以及将芯片连接至载体衬底的电连接线的那些电子器件,该载体衬底包括电连接网络或引线框。
背景技术
在电连接线尤其是以高频率传送信号的情况下,这些信号可以通过围绕电磁场而被衰减或被破坏和/或发射可能破坏周围环境的电磁场。
目前,为了应对这种问题,提出了向电子器件添加潜在地连接至地的金属屏蔽板。尽管如此,定位这类金属屏蔽板并将其电连接至地,加上制造包封块或将包封盖放置就位造成了问题并且成本很高。此外,由于所获得的屏蔽是非特定的并且位于距电连接线一定距离,因此,所获得的电磁保护水平仍然是不够的。
发明内容
根据一个实施例,提出了一种用于在电子芯片与载体衬底之间形成电连接的方法,此芯片安装在该载体衬底上。
该方法包括以下步骤:将至少一条电连接线置于该芯片的暴露的电连接焊盘与该载体衬底的暴露的电连接焊盘之间并且在该线的两端与这些焊盘之间形成电结;制造介电层,该介电层由在该电子芯片的以及该载体衬底的区域的顶部上的介电材料制成,包括该电连接线、这些电结和这些焊盘,使得此介电层形成局部介电涂层,该局部介电涂层至少部分地围绕该电连接线并且至少部分地覆盖这些电结和这些焊盘;以及制造局部导电屏蔽,该局部导电屏蔽由导电材料制成、至少部分地覆盖该局部介电涂层。
可以通过分配确定量的液体状态下的该介电材料以及使此介电材料硬化来获得包括该局部介电涂层的该介电层。
可以借助于溅射来分配该介电材料。
可以通过分配确定量的液体状态下的导电材料以及使此导电材料硬化来获得该局部导电屏蔽。
可以借助于包括分注注射器的控制工具来分配该导电材料。
可以制造该局部介电涂层以完全围绕该电连接线并完全覆盖这些焊盘和这些结,并且可以制造该局部导电屏蔽以完全覆盖该局部介电涂层。
该方法可以附加地包括以下步骤:在该电子芯片的以及该载体衬底的附加电连接焊盘之上的该介电层中制造开口;将附加电连接线置于这些附加焊盘之间并且在该附加线的两端与这些附加焊盘之间形成电结;以及制造该局部导电屏蔽使得此局部导电屏蔽与该附加电连接线和/或与这些附加焊盘中的至少一个附加焊盘相接触。
还提出了一种电子器件,该电子器件包括:载体衬底;电子芯片,该电子芯片安装在该载体衬底上;至少一条电连接线,该至少一条电连接线连接该载体衬底的电连接焊盘和该电子芯片的电连接焊盘;介电层,该介电层由在该电子芯片的以及该载体衬底的区域的顶部上的介电材料制成,包括该电连接线、这些结和这些焊盘,使得此介电材料形成局部介电涂层,该局部介电涂层至少部分地围绕该电连接线并且至少部分地覆盖这些结和这些焊盘;以及局部导电屏蔽,该局部导电屏蔽由导电材料制成、至少部分地覆盖该局部介电涂层。
该局部介电涂层可以完全围绕该电连接线并且完全覆盖这些焊盘和这些结,并且该局部导电屏蔽可以完全覆盖该局部介电涂层。
该器件可以包括至少一条附加电连接线,该至少一条附加电连接线连接该载体衬底的电连接焊盘和该电子芯片的电连接焊盘,该局部导电屏蔽与该附加电连接线和/或与这些电连接焊盘中的至少一个电连接焊盘相接触。
附图说明
现在将以附图所展示的非限制性示例的方式描述电子器件和制造模式,在附图中:
图1表示制造过程中的电子器件在一个制造步骤中的横截面视图;
图2表示图1的电子器件的俯视图;
图3表示制造过程中的电子器件在随后的制造步骤中的横截面视图;
图4表示图3的电子器件的俯视图;
图5表示制造过程中的电子器件在随后的制造步骤中的俯视图;
图6表示制造过程中的电子器件在随后的制造步骤中的横截面视图,示出了所获得的电子器件;以及
图7表示图6的电子器件的俯视图。
具体实施方式
如在图1和图2中所展示的,电子器件1包括载体衬底2以及包括有集成电路的电子芯片3,该电子芯片的背面4借助于粘合层(未示出)固定至载体衬底2的正面5。
载体衬底2由介电材料制成并且包括用于连接至一个或多个金属层的集成电连接网络6,该集成电连接网络包括正面5的正面暴露的电连接焊盘7和8,这些正面暴露的电连接焊盘横向地位于与电子芯片3的侧面9相距一定距离处并且彼此靠近。
电子芯片3包括与其背面4相反的此电子芯片3的正面12的正面暴露的电连接焊盘10和11,这些正面暴露的电连接焊盘位于与电子芯片3的侧面9相距一定距离处,离载体衬底2的正面焊盘7和8不远。
现在将描述出于在载体衬底2的以及电子芯片3的焊盘7与10之间以及可选地在焊盘8与11之间分别形成电连接的目的的步骤。
在图1和图2所展示的步骤中,电连接线(也称为键合接线)213被放置就位在暴露的电连接焊盘7与10之间,并且电结214和215借助于焊接分别形成在电连接线213的两端与焊盘7和10之间。
可以使用专门的接线键合机来实施将电连接线213放置就位的这个操作。
在图3和图4所展示的随后的步骤中,将确定量的粘合液体介电材料分配在载体衬底2和电子芯片3的正面5和12的以及电连接线213的区域的顶部上,使得此介电材料至少部分地覆盖面5和12、焊盘7、8、10和12以及结214和215并且完全围绕电连接线213。
在硬化之后,此介电材料在载体衬底2的以及电子芯片3的正面5和12的顶部上形成介电层217a并且形成局部介电涂层217b,该局部介电涂层覆盖焊盘7、8、10和12以及结214和215并且围绕电连接线213,介电层217a和局部介电涂层217b互相延伸。
此操作可以例如使用专门的工具来实施,该专门的工具包括能够递送液体导电材料的至少一滴对应校准的液体导电材料的控制分注注射器218,此液体导电材料具体地借助于润湿效应或者毛细效应流动。作为变体,此操作可以通过将整个电子器件1浸入到介电材料浴中来实施。可以借助于溅射来替代性地分配介电材料。
接下来,液体介电材料凭借其在室温下固有的硬化品质或者通过在热源或光辐射源效应下硬化而硬化以形成介电涂层217a和217b。例如,介电材料可以是适合的环氧树脂或通常被称为聚对二甲苯的聚对二甲苯聚合物。在实施例中,介电涂层217a和217b在电连接线213、焊盘7和10、芯片3以及衬底2的表面之上具有基本上均匀的涂层厚度。
在图5所展示的随后步骤中,例如借助于蚀刻使开口216a和216b穿过在焊盘8和11之上的介电层217a。接下来,附加电连接线(也称为键合接线)216被放置就位在附加的暴露的电连接焊盘8与11之间,并且电结借助于焊接分别形成在电连接线216的两端与焊盘8和11之间。
可以使用专门的接线键合机来实施将电连接线216放置就位的这个操作。
在图6和图7所展示的随后步骤中,局部地分配确定量的导电粘合液体材料,使得此导电材料完全围绕绝缘涂层217b、覆盖局部介电涂层217a并且与电连接线216和/或焊盘8和11相接触,此导电材料潜在地溢流到载体衬底2的以及电子芯片3的正面5和12上。在硬化之后,此导电材料形成局部导电屏蔽219,该局部导电屏蔽尽可能地靠近电连接线213并且连接至电连接线216以及至焊盘8和11。
此操作可以例如使用专门的控制工具来实施,该专门的控制工具包括能够递送该液体导电材料的至少一滴校准的液体导电材料的控制分注注射器220,此液体导电材料具体地借助于润湿效应或者毛细效应流动。
接下来,液体导电材料凭借其在室温下固有的硬化品质或者通过在热源或光辐射源效应下硬化而硬化以形成局部导电屏蔽219。例如,导电材料可以是填充有金属颗粒的环氧树脂。
然后,获得成品电子器件1。
电连接线213旨在传送载体衬底2的以及电子芯片3的焊盘7与10之间的电信号。导电屏蔽219形成对这些电信号的电磁保护。
由电连接线216连接的焊盘8和11形成电子器件1的电气电路的接地焊盘。因此,连接至焊盘8和11以及至电连接线216的导电屏蔽219连接至电子器件1的电气电路的地。
根据一个变体实施例,局部导电屏蔽219可以部分地覆盖局部介电涂层217b。
根据一个变体实施例,将有可能去掉电连接线216。
当然,电子器件1可以包括连接至载体衬底2的以及电子芯片3的其他焊盘7和10的其他电连接线213,以及连接载体衬底2的以及电子芯片3的其他焊盘8和11的其他电连接线216,该载体衬底和该电子芯片还配备有局部介电涂层217b以及局部导电屏蔽219,这些电连接线的对应制造步骤将会是相同的。
根据一个变体实施例,一个局部导电屏蔽219将有可能由多个邻近电连接线213共享并且局部地覆盖载体衬底的正面5和/或电子芯片3的正面12,使得此延伸的局部导电屏蔽219将会形成对电子器件1的电子电路中的一部分的电磁保护。在此情况下,将有可能提供单条接地电连接线216。
根据一个变体实施例,载体衬底2可以包括金属框,该金属框包括电子芯片3将会安装在其上的平台,电连接线213和216将电子芯片3连接至此框的外围引线。
Claims (18)
1.一种用于在电子芯片与载体衬底之间形成电连接的方法,包括以下步骤:
将第一电连接线置于所述电子芯片的第一暴露的电连接焊盘与所述载体衬底的第一暴露的电连接焊盘之间,所述电子芯片安装在所述载体衬底上,并且在所述第一电连接线的两端与所述电子芯片的第一暴露的电连接焊盘和所述载体衬底的第一暴露的电连接焊盘之间形成第一电结;
制造介电层,所述介电层由在所述电子芯片的以及所述载体衬底的区域的顶部上的介电材料制成,所述介电层覆盖所述第一电连接线、所述第一电结、所述电子芯片的第一暴露的电连接焊盘和所述载体衬底的第一暴露的电连接焊盘,使得所述介电层形成局部介电涂层,所述局部介电涂层完全围绕所述第一电连接线并且完全覆盖所述第一电结、所述电子芯片的第一暴露的电连接焊盘和所述载体衬底的第一暴露的电连接焊盘;
在所述电子芯片的第二电连接焊盘以及所述载体衬底的第二电连接焊盘上方的所述介电层中制造开口;
将第二电连接线置于所述电子芯片的所述第二电连接焊盘与所述载体衬底的第二电连接焊盘之间;以及
制造局部导电屏蔽,所述局部导电屏蔽由导电材料制成、至少部分地覆盖所述局部介电涂层、并且直接地接触所述第二电连接线、所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘。
2.根据权利要求1所述的方法,其中,制造所述介电层包括分配确定量的液体状态下的所述介电材料以及使所述介电材料硬化。
3.根据权利要求2所述的方法,其中,借助于溅射来分配所述介电材料。
4.根据权利要求1所述的方法,其中,制造所述局部导电屏蔽包括分配确定量的液体状态下的导电材料以及使所述导电材料硬化。
5.根据权利要求4所述的方法,其中,使用控制工具来分配所述导电材料。
6.根据权利要求5所述的方法,其中,所述控制工具为分注注射器。
7.根据权利要求1所述的方法,其中,制造所述局部导电屏蔽包括完全覆盖所述局部介电涂层、并且直接地接触所述第二电连接线、所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘。
8.根据权利要求1所述的方法,进一步包括以下步骤:
在所述第二电连接线的两端与所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘之间形成第二电结。
9.根据权利要求1所述的方法,其中,制造介电层包括以均匀的厚度沉积所述介电层。
10.一种电子器件,包括:
载体衬底;
电子芯片,所述电子芯片安装在所述载体衬底上,并且所述电子芯片包括第一电连接焊盘和第二电连接焊盘;
第一电连接线,所述第一电连接线连接所述载体衬底的第一电连接焊盘和所述电子芯片的第一电连接焊盘;
第二电连接线,所述第二电连接线连接所述载体衬底的第二电连接焊盘和所述电子芯片的第二连接焊盘;
介电层,所述介电层由在所述电子芯片的以及所述载体衬底的区域的顶部上的介电材料制成,所述介电层覆盖所述第一电连接线、所述电子芯片的第一电连接焊盘和所述载体衬底的第一电连接焊盘,但是所述介电层不覆盖所述第二电连接线、所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘,使得所述介电层形成局部介电涂层,所述局部介电涂层完全围绕所述第一电连接线并且完全覆盖所述电子芯片的第一电连接焊盘和所述载体衬底的第一电连接焊盘;以及
局部导电屏蔽,所述局部导电屏蔽由导电材料制成、至少部分地覆盖所述局部介电涂层、并且直接地接触所述第二电连接线、所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘。
11.根据权利要求10所述的电子器件,其中,所述局部导电屏蔽完全覆盖所述局部介电涂层、所述第二电连接线、所述电子芯片的第二电连接焊盘和所述载体衬底的第二电连接焊盘。
12.根据权利要求10所述的电子器件,其中,所述介电层具有均匀的厚度。
13.根据权利要求10所述的电子器件,其中,所述介电层沿所述电连接线的长度具有不均匀的厚度。
14.一种用于在电子芯片与载体衬底之间形成电连接的方法,包括以下步骤:
将电子芯片安装至载体衬底;
将第一键合接线连接在所述电子芯片的第一电连接焊盘与所述载体衬底的第一电连接焊盘之间;
使液体介电材料流动以涂覆所述第一键合接线以及所述电子芯片和所述载体衬底各自的第一部分;
使所述液体介电材料硬化以形成介电层,所述介电层围绕所述第一键合接线具有均匀的厚度并且在所述电子芯片和所述载体衬底各自的所述第一部分的表面上;
在所述电子芯片的第二电连接焊盘以及所述载体衬底的第二电连接焊盘上方的所述介电层中制造开口;
将第二键合接线连接于所述电子芯片的所述第二电连接焊盘与所述载体衬底的所述第二电连接焊盘之间;
使液体导电材料流动以涂覆所述介电层、并且与所述第二键合接线物理以及电连接;以及
使所述液体导电材料硬化以形成在所述第一键合接线上围绕所述介电层、并且与所述第二键合接线物理以及电连接的导电屏蔽。
15.如权利要求14所述的方法,进一步包括:
其中,使所述液体导电材料流动进一步包括使所述液体导电材料流动以涂覆所述第二键合接线;并且
其中,使所述液体导电材料硬化进一步包括使所述液体导电材料硬化以形成围绕所述第二键合接线的所述导电屏蔽。
16.一种电子器件,包括:
载体衬底;
电子芯片,所述电子芯片安装在所述载体衬底上;
第一键合接线,所述第一键合接线连接于所述载体衬底的第一电连接焊盘和所述电子芯片的第二电连接焊盘之间;
第二键合接线,所述第二键合接线连接于所述载体衬底的第三电连接焊盘和所述电子芯片的第四电连接焊盘之间;
介电层,所述介电层围绕所述第一键合接线具有均匀的厚度并且在所述电子芯片和所述载体衬底各自的第一部分的表面上,但是所述介电层不围绕所述第二键合接线的任何部分以及所述电子芯片和所述载体衬底的第二部分的任何部分;以及
硬化的液体导电材料,所述硬化的液体导电材料围绕至少在所述第一键合接线处的所述介电层、并且至少与所述第二键合接线物理以及电连接。
17.如权利要求16所述的电子器件,进一步包括:
其中,所述硬化的液体导电材料围绕所述第二键合接线、所述第三电连接焊盘和所述第四电连接焊盘。
18.根据权利要求16所述的电子器件,其中,所述介电层沿所述键合接线的长度具有不均匀的厚度。
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FR1660622A FR3058259A1 (fr) | 2016-11-03 | 2016-11-03 | Procede de realisation d'une connexion electrique entre une puce electronique et une plaque de support et dispositif electronique |
FR1660622 | 2016-11-03 |
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JPH05226391A (ja) * | 1992-01-13 | 1993-09-03 | Nec Corp | Icチップの封止方法 |
JPH06268100A (ja) * | 1993-03-12 | 1994-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の封止構造および封止方法 |
JP2000058579A (ja) * | 1998-08-04 | 2000-02-25 | Hitachi Ltd | 半導体装置およびその製造方法 |
US20040070065A1 (en) * | 2002-10-11 | 2004-04-15 | Aritharan Thurairajaratnam | Controlled impedance for wire bonding interconnects |
KR100575086B1 (ko) * | 2004-11-11 | 2006-05-03 | 삼성전자주식회사 | 도전성 몰딩 컴파운드를 구비한 반도체 패키지 및 그제조방법 |
TW200903769A (en) * | 2007-07-13 | 2009-01-16 | Ind Tech Res Inst | An integrated circuit package structure with EMI shielding |
US20100025864A1 (en) * | 2008-07-31 | 2010-02-04 | International Business Machines Corporation | Shielded wirebond |
KR100950511B1 (ko) * | 2009-09-22 | 2010-03-30 | 테세라 리써치 엘엘씨 | 와이어 본딩 및 도전성 기준 소자에 의해 제어되는 임피던스를 포함하는 마이크로전자 어셈블리 |
US8377749B1 (en) * | 2009-09-15 | 2013-02-19 | Applied Micro Circuits Corporation | Integrated circuit transmission line |
JP5802695B2 (ja) * | 2013-03-19 | 2015-10-28 | 株式会社東芝 | 半導体装置、半導体装置の製造方法 |
FR3058259A1 (fr) * | 2016-11-03 | 2018-05-04 | Stmicroelectronics (Grenoble 2) Sas | Procede de realisation d'une connexion electrique entre une puce electronique et une plaque de support et dispositif electronique |
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