CN106471624B - 用于基于鳍状物的电子设备的固体源扩散结 - Google Patents

用于基于鳍状物的电子设备的固体源扩散结 Download PDF

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Publication number
CN106471624B
CN106471624B CN201480079891.2A CN201480079891A CN106471624B CN 106471624 B CN106471624 B CN 106471624B CN 201480079891 A CN201480079891 A CN 201480079891A CN 106471624 B CN106471624 B CN 106471624B
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fin
glass
over
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integrated circuit
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Chinese (zh)
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CN106471624A (zh
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W·M·哈菲兹
C-H·简
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Intel Corp
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Intel Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/025—Manufacture or treatment of resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
CN201480079891.2A 2014-07-14 2014-07-14 用于基于鳍状物的电子设备的固体源扩散结 Active CN106471624B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011383597.4A CN112670349B (zh) 2014-07-14 2014-07-14 用于基于鳍状物的电子设备的固体源扩散结

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/046525 WO2016010515A1 (en) 2014-07-14 2014-07-14 Solid-source diffused junction for fin-based electronics

Related Child Applications (1)

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CN202011383597.4A Division CN112670349B (zh) 2014-07-14 2014-07-14 用于基于鳍状物的电子设备的固体源扩散结

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CN106471624A CN106471624A (zh) 2017-03-01
CN106471624B true CN106471624B (zh) 2021-01-05

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US (6) US9842944B2 (enExample)
EP (2) EP3170207A4 (enExample)
JP (1) JP6399464B2 (enExample)
KR (1) KR102241181B1 (enExample)
CN (2) CN112670349B (enExample)
TW (3) TWI600166B (enExample)
WO (1) WO2016010515A1 (enExample)

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WO2016010515A1 (en) 2014-07-14 2016-01-21 Intel Corporation Solid-source diffused junction for fin-based electronics
WO2016209206A1 (en) * 2015-06-22 2016-12-29 Intel Corporation Dual height glass for finfet doping
US9847388B2 (en) * 2015-09-01 2017-12-19 International Business Machines Corporation High thermal budget compatible punch through stop integration using doped glass
US9976650B1 (en) * 2017-02-01 2018-05-22 Deere & Company Forkless synchronizer with sensor rail arrangement
US11075119B2 (en) * 2017-03-30 2021-07-27 Intel Corporation Vertically stacked transistors in a pin
US10401122B2 (en) 2017-06-08 2019-09-03 Springfield, Inc. Free floating handguard anchoring system
US20190172920A1 (en) * 2017-12-06 2019-06-06 Nanya Technology Corporation Junctionless transistor device and method for preparing the same
US11393934B2 (en) * 2017-12-27 2022-07-19 Intel Corporation FinFET based capacitors and resistors and related apparatuses, systems, and methods
US10325819B1 (en) * 2018-03-13 2019-06-18 Globalfoundries Inc. Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
KR102813445B1 (ko) * 2019-10-02 2025-05-27 삼성전자주식회사 집적회로 소자 및 그 제조 방법
CN113921520B (zh) * 2021-09-29 2024-08-06 上海晶丰明源半导体股份有限公司 射频开关器件及其制造方法

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CN102543753A (zh) * 2010-12-29 2012-07-04 新加坡商格罗方德半导体私人有限公司 改善之鳍式场效晶体管
CN102956692A (zh) * 2011-08-19 2013-03-06 阿尔特拉公司 缓冲型finFET器件
US20140117462A1 (en) * 2012-10-31 2014-05-01 International Business Machines Corporation Bulk finfet with punchthrough stopper region and method of fabrication

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CN102543753A (zh) * 2010-12-29 2012-07-04 新加坡商格罗方德半导体私人有限公司 改善之鳍式场效晶体管
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US20140117462A1 (en) * 2012-10-31 2014-05-01 International Business Machines Corporation Bulk finfet with punchthrough stopper region and method of fabrication

Also Published As

Publication number Publication date
US10741640B2 (en) 2020-08-11
WO2016010515A1 (en) 2016-01-21
US11139370B2 (en) 2021-10-05
US9899472B2 (en) 2018-02-20
US20200335582A1 (en) 2020-10-22
US20170133461A1 (en) 2017-05-11
TWI600166B (zh) 2017-09-21
US20190296105A1 (en) 2019-09-26
US10355081B2 (en) 2019-07-16
EP3300119A1 (en) 2018-03-28
KR20170028882A (ko) 2017-03-14
JP2017527099A (ja) 2017-09-14
CN112670349B (zh) 2024-09-17
TW201614852A (en) 2016-04-16
US11764260B2 (en) 2023-09-19
US20180158906A1 (en) 2018-06-07
US20170018658A1 (en) 2017-01-19
JP6399464B2 (ja) 2018-10-03
US9842944B2 (en) 2017-12-12
TWI628801B (zh) 2018-07-01
KR102241181B1 (ko) 2021-04-16
CN106471624A (zh) 2017-03-01
EP3170207A1 (en) 2017-05-24
US20220102488A1 (en) 2022-03-31
TWI664738B (zh) 2019-07-01
CN112670349A (zh) 2021-04-16
TW201727926A (zh) 2017-08-01
TW201828482A (zh) 2018-08-01
EP3170207A4 (en) 2018-03-28

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