CN106465568B - Electric conductivity junction film, printed wiring board and electronic equipment - Google Patents
Electric conductivity junction film, printed wiring board and electronic equipment Download PDFInfo
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- CN106465568B CN106465568B CN201580028537.1A CN201580028537A CN106465568B CN 106465568 B CN106465568 B CN 106465568B CN 201580028537 A CN201580028537 A CN 201580028537A CN 106465568 B CN106465568 B CN 106465568B
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- electric conductivity
- cement layer
- electroconductive particle
- junction film
- film
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- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Abstract
The present invention provides a kind of electric conductivity junction film, printed wiring board and electronic equipment that can prevent from causing shielding properties to decline because resistance increases when with this simple and easy method overlay electronic element of press process.Electric conductivity junction film 1 makes position corresponding with the truncation recess portion of printed wiring board to the stretching, extension of film surface direction and overlay electronic element 5, shields electromagnetic wave with this by press process.The present invention contains: the electric conductivity cement layer 10 that is formed by the isotropism conductive material of the 10a containing electroconductive particle and in press process than electric conductivity cement layer 10 close to 2 side of electronic component, bottom cement layer 11 that the anisotropic conductive material by the 11a containing electroconductive particle is formed.
Description
Technical field
The present invention relates to a kind of electric conductivity junction film, printed wiring board and electronic equipments.
Background technique
There is a kind of screening cover to be used to avoid the electronic component on external electromagnetic waves invasion printed wiring board in the past and has prevented
Flow out (such as patent document 1) in the electromagnetic wave outside portion that only electronic circuit generates.This screening cover is made of metal layers such as stainless steels
Cover shape, and its covering is made to need electronic component to be protected when configuration.In addition, metal layer is connected to print about the screening cover
Earthy wiring pattern on wiring plate, shield effectiveness are improved.
But screening cover inner wall surface thereof needs to reserve gap between electronic component, in order to avoid inner wall face contact printed wiring board
On electronic component, therefore, it is difficult to reach the slimming of printed wiring board.With regard to this, as shown in patent document 2 and 3, will also lead
Electric cream is printed on the mode on printed wiring board.In addition, patent document 4 discloses a kind of technology, with corresponding with substrate shape
Thermal softening electromagnetic shielding material covers the entire substrate including installation elements, at least will be cold after the heating of above-mentioned shielding material
But, it is fitted tightly over it on substrate.
Advanced technical literature
Patent document
Patent document 1: special open (Japan Patent) 2001-345592 bulletin
Patent document 2: special open (Japan Patent) 2009-016715 bulletin
Patent document 3: special open (Japan Patent) 2010-245139 bulletin
Patent document 4: the flat 5-327270 bulletin of special open (Japan Patent).
Summary of the invention
Problems to be solved by the invention
However, patent document 2 ~ 4 or manufacturing process's complexity or load are larger.Therefore, in recent years, it is similar to patent document 1
Screening cover become mainstream.In addition, when electromagnetic shielding material being allowed to cooperate the shape of electronic component as described in patent document 4, electricity
Resistance rising caused by magnetic shielding material deformation can reduce shield effectiveness.
In view of the above problems, the purpose of the present invention is to provide a kind of electric conductivity junction film, printed wiring board and electronics to set
It is standby, through the invention, also it is less prone to when with this simple and easy method overlay electronic element of press process and is made because resistance increases
The problem of declining at shielding properties.
Solve the problems, such as taken technological means
The present invention relates to a kind of electric conductivity junction films, make its truncation recess portion phase with printed wiring board by press process
The position answered shields electromagnetic wave to the stretching, extension of film surface direction and overlay electronic element with this, which contains: by containing the
Electric conductivity cement layer that the isotropism conductive material of one electroconductive particle is formed and be located in above-mentioned press process than
Above-mentioned electric conductivity cement layer close to above-mentioned electronic component side position, by being led containing the anisotropy of the second electroconductive particle
The bottom cement layer that electric material is formed.
When passing through press process electric conductivity junction film overlay electronic element, electric conductivity junction film can be with printed wiring
The truncation of plate is correspondingly stretched with recess shapes.At this point, electric conductivity junction film is from electronic component toward lateral direction and gradually substantially
Degree stretching, extension.In said structure, the outermost electric conductivity cement layer of electronic component is located remotely from by containing the first electric conductivity grain
The isotropism conductive material of son is formed, and the bottom cement layer positioned at electronic component side is by each containing the second electroconductive particle
Anisotropy conductive material is formed.The ratio of electroconductive particle contained by isotropism conductive material is more than anisotropic conductive material,
Therefore, even if electric conductivity cement layer is bigger than bottom cement layer stretch amplitude, can also prevent the first electroconductive particle it
Between there is gap and electric conductivity caused to reduce.Therefore, can prevent causes shielding properties to decline because of resistance increase
Problem.
In addition, can be arranged as follows in electric conductivity junction film of the invention: first electroconductive particle is after stretching, extension
The electric conductivity cement layer in contact with each other at least partially density dispersion.
By above structure, the position that electroconductive particle most easily produces gap between each other can be effectively prevented ---
The electric conductivity decline at extension degree maximum position i.e. in electric conductivity cement layer.
In addition, electric conductivity junction film of the invention can be such that described contained in the electric conductivity cement layer
One electroconductive particle is 15% ~ 25% flaky particle of thickness before the stretching, extension that average major diameter is the electric conductivity cement layer,
Contained first electroconductive particle is 40 weight of weight % ~ 80 % of the electric conductivity cement layer total weight.
By above structure, the position in gap is most easily produced between each other in electroconductive particle --- i.e. electric conductivity engages
In oxidant layer, the major diameter direction of the first electroconductive particle can be consistent with the film surface direction of electric conductivity cement layer, therefore, press process
The first electroconductive particle is easy contact between each other afterwards, and the electric conductivity at the maximum position of extension degree can be effectively prevent to decline.
In addition, electric conductivity junction film of the invention can be such that the average grain diameter of second electroconductive particle is described
The 10% ~ 50% of thickness before bottom cement layer stretches, and contained second electroconductive particle is the bottom cement layer
40 weight of weight % ~ 80 % of total weight.
It can prevent from causing entire bottom to connect because gap occurs between each other in the second electroconductive particle by above structure
The electric conductivity of mixture layer declines, and resistance is further prevented to increase caused shielding properties decline.
In electric conductivity junction film of the invention, second electroconductive particle can be dendroid particle.
In said structure, the second electroconductive particle is dendroid particle, with the non-dendroid particle for using same weight %
It compares, can be improved the mutual contact rate of the second electroconductive particle.The cement of bottom cement layer can be prevented with this
Amount reduce, it is conductive so as to be improved in the case where not reducing the zygosity of electric conductivity cement layer and bottom cement layer
Property.
It can also be arranged as follows in electric conductivity junction film of the invention: thickness before the stretching, extension of the electric conductivity cement layer
It is the 1% ~ 3% of the groove depth of the recess portion, thickness is the 4% ~ 8% of the groove depth of the recess portion before the stretching, extension of the bottom cement layer,
Total thickness before the two stretching, extension is the 5% ~ 11% of the groove depth of the recess portion.
Electric conductivity junction film of the invention also can be such that the thickness of the electric conductivity cement layer is 10 μm ~ 30 μm, institute
The thickness for stating bottom cement layer is 40 μm ~ 80 μm.
Electric conductivity junction film of the invention can be such that transfer film is laminated in connecing with bottom for the electric conductivity cement layer
On the opposite face of mixture layer, storage modulus of transfer film under the conditions of 150 DEG C or more of temperature is 20MPa or less.
By above structure, transfer film is easy to extend when hot pressing is processed, and is able to ascend electric conductivity junction film to electronics
The truncation of the element and printed wiring board landfill characteristics of recess portion.
Shielding printed wiring board of the invention is characterized in that containing above-mentioned electric conductivity junction film.
Electronic equipment of the invention is characterized in that containing above-mentioned shielding printed wiring board.
Invention effect
It can prevent when with press process, electric conductivity junction film is covered on electronic component by this simple method because of electricity
Resistance increases and shielding properties is caused to decline.
Detailed description of the invention
Fig. 1 is the sectional view of electric conductivity junction film.
Fig. 2 is the detailed description figure of electric conductivity junction film.
Fig. 3 is the press process explanatory diagram of electric conductivity junction film.
Fig. 4 is the form explanatory diagram for the electric conductivity junction film being layered on epoxy glass substrate in embodiment.
Fig. 5 is the measuring method explanatory diagram of the sheet resistance value of electric conductivity junction film in embodiment.
Specific embodiment
The preferred embodiment of the present invention is illustrated with reference to the accompanying drawings.
As shown in Figure 1, the setting of electric conductivity junction film 1 of present embodiment passes through compacting on shielding printed wiring board 100
Processing makes position corresponding with recess portion carry out overlay electronic element 2 to the stretching, extension of film surface direction, carries out electromagnetic wave shielding with this.
Specifically, printed wiring board 100 is equipped with: the cloth including signal pattern and grounding pattern etc. on substrate 4
The passive elements and integrated circuit chip etc. such as line pattern, capacitor and inductance including line electronic components 2.These electronics
Element 2 passes through resin plastic-sealed equal encapsulating materials 3 and has carried out integral packaging.Multiple electronics by integral packaging are formed on substrate 4
The unit module that element 2 forms, each unit module are distinguished by concave slot (recess portion).Substrate 4 is with unit module
Unit is truncated from recess portion, and as the setting of printed wiring board 100 to the various electronic equipments 300 such as laptop and tablet terminal
In.In addition, the truncation of the printed wiring board in the present invention refers to above-mentioned recess portion with recess portion.
(electric conductivity junction film 1)
So that electric conductivity junction film 1 is covered the multiple unit modules being arranged on substrate 4, and carries out press process.It is conductive with this
Property junction film 1 in be located at recess portion on the upside of position enter in the slot of recess portion, to film surface direction stretch.
This electric conductivity junction film 1 is containing conductive cement layer 10 and is located at more close than electric conductivity cement layer 10
The bottom cement layer 11 of 2 side of electronic component.That is, electric conductivity junction film 1 is by electric conductivity cement layer 10 and bottom cement
11 stacking of layer is formed.
Electric conductivity cement layer 10 and bottom cement layer 11 by electroconductive particle and adhesive mixture --- lead
Electrical cement is formed.The electrical connection of electric conductivity cement is by the continuously mechanical contact of the electroconductive particle in adhesive
And realize, which is maintained by the bonding force of adhesive.
The adhesive of electric conductivity cement layer 10 and bottom cement layer 11 can enumerate acrylic resin, epoxies
Resin, silicon resinoid, thermoplastic elastomer (TPE) resinoid, rubber resin, polyester resin, polyurethane based resin etc..In addition, connecing
Independent one kind that mixture can be above-mentioned resin is also possible to its mixture.In addition, adhesive can also contain tackifier again.Make
Fatty acid hydrocarbon resin, C5/C9 hybrid resin, rosin, rosin derivative, terpene resin, aromatic can be enumerated for tackifier
Hydrocarbon resin, heat reactivity resin etc..
The electroconductive particle of electric conductivity cement layer 10 and bottom cement layer 11 use carbon, silver, copper, nickel, scolding tin,
The metal packings such as aluminium, tin, bismuth and the silver-plated obtained wicker copper of copper powder, there are also the plating metals on the objects such as resin beads and glass microballoon
Obtained from filler or these fillers mixture.
The shape of electroconductive particle 10a and 11a can be spherical, needle-shaped, fibrous, laminar, any in dendroid
It is a kind of.In addition, as shown in Fig. 2, in the present embodiment, the first electric conductivity of electroconductive particle 10a(of electric conductivity cement layer 10
Particle) use laminar electroconductive particle, the second electroconductive particle of electroconductive particle 11a(of bottom cement layer 11) use tree
Dendritic electroconductive particle.
(electric conductivity junction film 1: electric conductivity cement layer 10)
Electric conductivity cement layer 10 is formed by the isotropism conductive material of the 10a containing electroconductive particle.Electric conductivity cement
Layer 10 is also possible to two layers or more of multilayered structure.Thickness lower limit before the stretching, extension of electric conductivity cement layer 10 is with recess portion groove depth
1.0% is advisable, and more preferably 1.5%.In addition, the thickness upper limit before electric conductivity cement layer 10 stretches is advisable with 3.0%, more preferably
2.0%.More specifically, the lower limit of 10 thickness of electric conductivity cement layer is advisable with 10 μm, and 15 μm more preferable.Electric conductivity cement layer
The upper limit of 10 thickness is advisable with 30 μm, and 20 μm more preferable.The lower limit of electric conductivity cement layer stretches electric conductivity less than above-mentioned value
It is difficult to contact between electroconductive particle after junction film 1, therefore, the electric conductivity at the maximum position of extension degree will be damaged.And it is conductive
Property cement layer the upper limit be more than above-mentioned value, then landfill characteristics when being filled to small recess portion will be deteriorated, and from warp
It is also uneconomical from the point of view of angle of helping.
Electric conductivity cement layer 10 is formed by isotropism conductive material, therefore electric conductivity cement layer 10 can be in thickness side
Ensure energized state in the three-dimensional omnidirection constituted to, width direction and longitudinal direction.
Electroconductive particle 10a is close with what is contacted with each other at least partially in the electric conductivity cement layer 10 preferably after stretching, extension
Degree dispersion.In addition, so-called " contacting with each other at least partially " be not limited to make in the electric conductivity cement layer 10 after stretching, extension it is contained
This case that the whole electroconductive particle 10a contact having and continuous (electrical connection), as long as conductive particle 10a is at least in thickness
Direction, width direction or longitudinal direction, which contact with each other, realizes electrical connection.
Specifically, the containing ratio lower limit of electroconductive particle 10a be 10 total weight of electric conductivity cement layer 40 weight % then
More it is suitable for, 50 weight % are more preferable.The containing ratio upper limit of electroconductive particle 10a is the 80 of the total weight of electric conductivity cement layer 10
Weight % is advisable, and 60 weight % are more preferable.The containing ratio lower limit of electroconductive particle is then led after electric conductivity junction film 1 stretches less than above-mentioned value
It is difficult to contact between conductive particles, therefore the electric conductivity at the maximum position of extension degree will be damaged.And electroconductive particle contains
If the rate upper limit is more than above-mentioned value, zygosity can decline, and economically uneconomical.
As shown in the electroconductive particle 10a of present embodiment, the first electric conductivity contained in electric conductivity cement layer 10
Particle is preferably flaky particle.Before in addition, electroconductive particle 10a is averaged, the lower limit of major diameter is stretched with electric conductivity cement layer 10
The 15% of thickness is advisable, and 18% is more preferable.The be averaged upper limit of major diameter of electroconductive particle 10a stretches preceding thickness with electric conductivity cement layer 10
25% be advisable, 22% is more preferable.The shape of first electroconductive particle 10a is to have the flake of major diameter, therefore connect in aftermentioned electric conductivity
In the Stacking steps for closing the electric conductivity cement layer 10 in the manufacturing method of film 1, the major diameter side of contained electroconductive particle 10a
To will be consistent with the film surface direction of electric conductivity cement layer.With this, the printed wiring board with truncation recess portion is pressed
After system processing, it is easy contact between electroconductive particle 10a, the electric conductivity for being stretched over maximum position can be effectively prevented
Decline.In addition, the average major diameter and average grain diameter of electroconductive particle can be measured with laser diffraction scattering method.In addition, electric conductivity
If the average major diameter lower limit of particle 10a is less than stretch preceding thickness 15%, electroconductive particle after electric conductivity cement layer 10 stretches
Between be difficult to contact, therefore can damage utmostly stretch position electric conductivity.
In addition, so-called " forming electric conductivity cement layer 10 by isotropism conductive material " refers to electric conductivity cement layer 10
Thickness direction, width direction and longitudinal direction be energized state.That is, leading by appropriate adjustment electric conductivity cement layer 10
The shapes of conductive particles, the type of adhesive, relative to adhesive electroconductive particle mixed proportion, pressurization compacting when pressure
Power and temperature etc. obtain isotropism conductive material.
(electric conductivity junction film 1: bottom cement layer 11)
Bottom cement layer 11 is formed by the anisotropic conductive material of the 11a containing electroconductive particle.In addition, bottom cement
Layer 11 is also possible to two layers or more of multilayered structure.Thickness lower limit before the stretching, extension of bottom cement layer 11 is with the groove depth of recess portion
4% is advisable, and preferably 5%.In addition, the thickness upper limit before bottom cement layer 11 stretches is advisable with 8%, preferably 6%.It is more specific and
Speech, the lower limit of thickness is advisable before bottom cement layer 11 stretches with 40 μm, and 50 μm more preferable.The upper limit of 11 thickness of bottom cement layer
It is advisable with 80 μm, 60 μm more preferable.For the lower limit of bottom cement layer less than above-mentioned value, electric conductivity junction film 1 is conductive after stretching
It is difficult to contact between property particle, so the electric conductivity at the position utmostly stretched will be damaged.And the upper limit of bottom cement layer
More than above-mentioned value, landfill characteristics when being filled to small recess portion can be deteriorated, and economically also uneconomical.
The anisotropic conductive material for forming bottom cement layer 11 has the property for only passing through electric current in compression aspect.
Therefore, the bottom cement layer 11 formed with anisotropic conductive cement only can be such that electric current passes through in thickness direction holding
State.
The containing ratio lower limit of electroconductive particle 11a is that 40 weight % of 11 total weight of bottom cement layer are advisable, 50 weight %
More preferably.The containing ratio upper limit of electroconductive particle 11a is that 80 weight % of 11 total weight of bottom cement layer are advisable, and 60 weight % are more
It is good.The containing ratio lower limit of electroconductive particle is difficult between electroconductive particle after electric conductivity junction film 1 stretches less than above-mentioned value
Contact, so the electric conductivity at the position farthest stretched will be damaged.And the containing ratio upper limit of electroconductive particle is more than upper
If stating value, zygosity can decline, and economically uneconomical.
As shown in the electroconductive particle 11a of present embodiment, the second electric conductivity grain contained in bottom cement layer 11
Son is preferably dendroid particle.In addition, the lower limit of electroconductive particle 11a average grain diameter stretches preceding thickness with bottom cement layer 11
10% be advisable, 20% is more preferable.The 50% of thickness before the upper limit of electroconductive particle 11a average grain diameter is stretched with bottom cement layer 11
It is advisable, 40% is more preferable.
So-called " bottom cement layer 11 is formed by anisotropic conductive material " refers to that bottom cement layer 11 is in and only exists
The state that one direction (thickness direction) ensures to pass through electric current.That is, passing through the electric conductivity of appropriate adjustment bottom cement layer 11
Pressure when mixed proportion, the pressurization compacting relative to adhesive of the shape of particle, the type of adhesive, electroconductive particle, with
And temperature etc. obtains anisotropic conductive material.
In addition, the thickness before the stretching, extension of electric conductivity junction film 1 itself --- i.e. electric conductivity cement layer 10 and bottom engagement
The lower limit of overall thickness (sum total of 11 thickness of thickness and bottom cement layer of electric conductivity cement layer 10) before the stretching, extension of oxidant layer 11
It is advisable with the 5% of the groove depth of recess portion, more preferably 7%.In addition, the thickness before the stretching, extension of electric conductivity junction film 1 itself --- it is i.e. conductive
Property cement layer 10 and bottom cement layer 11 stretch before the upper limit of overall thickness be advisable with 11%, more preferably 9%.
(manufacturing method of electric conductivity junction film 1)
As shown in figure 3, electric conductivity junction film 1 is placed on electronic component 2 in the state of being laminated with transfer film 12, then place
Buffer film 13 simultaneously pressurizes from upside in this case.About the manufacturing method of electric conductivity junction film 1, firstly, this transfer film 12 is logical
The extrusion moldings such as T shape die methods are crossed, are formed membranaceous.As long as in addition, transfer film 12 has for electric conductivity cement layer 10
There is fissility, be not particularly limited, for example the melamine mould release or acrylic acid of coating silicon or non-silicon class can be used
The PET film etc. of mould release.In addition, storage modulus of the transfer film 12 preferably under the conditions of 150 DEG C or more of temperature is 20MPa or less.
With this, can be obtained when in press process by the truncation recess portion of the landfill of electric conductivity junction film 1 to printed wiring board good
Landfill characteristics.
By the isotropism conductive material containing electroconductive particle 10a being coated on this transfer film 12 come in transfer film 12
Upper stacking electric conductivity cement layer 10.On the other hand, it separately applies being formed by by extrusion molding on not shown stripping film
Cloth contains the anisotropic conductive material of electroconductive particle 11a, so as to form bottom cement layer 11.Then, to this two layers
Stack is laminated, so as to form transfer film 12, electric conductivity cement layer 10, bottom cement layer 11 and without figure is sequentially laminated with
Show the laminate structure of stripping film.
In this way, being formed by electric conductivity junction film 1 is in the state being clipped between transfer film 12 and stripping film.In addition, this
Laminate structure can be rolled into cylinder keeping and transport etc. in the form of above-mentioned four-layer structure.In addition it is also possible in only removing removing
Reel and keeping and transport etc. in the form of three-decker after film.When with three-decker reel, preferably to conductive on transfer film 12
Property 10 lamination surfaces of cement layer the face of opposite side carry out release processing.
In addition, being not limited by above-mentioned laminating method to be made, can also be led for being laminated on transfer film 12
The laminated body of electrical cement layer 10 is coated the anisotropic conductive material containing electroconductive particle 11a, and bottom is consequently formed
Cement layer 11.Electric conductivity junction film 1 can be laminated on transfer film 12 with this.
(press process)
As shown in figure 3, being covered on substrate 4 with the electric conductivity junction film 1 being layered on transfer film 12 with 3 one of encapsulating material
The electronic component 2 of encapsulation places buffer film 13 in 12 side of transfer film and carries out press process in this case.In this embodiment party
In formula, press process is carried out with plate, but not limited to this, the mold for squeezing into recess portion also can be used.It can not also make at this time
With buffer film 13.
In above-mentioned illustrate, mainly characteristic part is said in order to which the present invention is more readily understood
It is bright, but the present invention is not limited to embodiment described in details described above, the present invention is readily applicable to other embodiments,
Application range should obtain widely explaining as far as possible.
In addition, word as used in this specification and grammer are only used for definitely illustrating the present invention, it is right that there is no restriction
The effect of explanation of the invention.In addition, being easy to join from concept of the invention described in this specification as long as those skilled in the art
Expect other structures included in concept of the present invention, system and method etc..Therefore, the content that claims are described should be by
It is considered as comprising not departing from other equivalent structures in the range of technical thought of the invention.In addition, of the invention in order to fully understand
Purpose and effect of the invention hope reader sufficiently refer to published document etc..
Embodiment
(embodiment 1 ~ 4, comparative example 1 ~ 3)
Electric conductivity junction film used in embodiment is laminated from following part: sheet-containing shape electroconductive particle it is each to
Same sex conductive material is formed by electric conductivity cement layer and by the anisotropic conductive material containing dendritic electroconductive particle
Expect the bottom cement layer formed.The electric conductivity cement layer of embodiment 1 ~ 4 by compacting stretching, extension before thickness be respectively
20µm,20µm,15µm,10µm.In addition, the bottom cement layer of embodiment 1 ~ 4 is distinguished by the thickness before compacting stretching, extension
It is 40 μm, 60 μm, 60 μm, 80 μm.
The electric conductivity junction film that Comparative Examples 1 and 2 uses is laminated by following part: by the electroconductive particle containing dendroid
The electric conductivity cement layer that anisotropic conductive material is formed and the isotropism conduction material by sheet-containing shape electroconductive particle
Expect the bottom cement layer formed.In addition, the electric conductivity junction film that comparative example 3 uses is laminated by following part: by containing tree
Electric conductivity cement layer that the anisotropic conductive material of dendritic electroconductive particle is formed and by electroconductive particle containing dendroid
Anisotropic conductive material formed bottom cement layer.The electric conductivity cement layer of comparative example 1 ~ 3 is stretched by compacting
Thickness before exhibition is respectively 60 μm, 80 μm, 60 μm.In addition, before the bottom cement layer of comparative example 1 ~ 3 is by compacting stretching, extension
Thickness is respectively 20 μm, 20 μm, 60 μm.
In addition, the electric conductivity in embodiment 1 ~ 4 and the respective electric conductivity cement layer of comparative example 1 ~ 3 and bottom cement layer
Particle is mixed into the 60wt% that ratio is the respective total amount of electric conductivity cement layer and bottom cement layer.The conduction of embodiment 1 ~ 4
Property cement layer and Comparative Examples 1 and 2 bottom cement layer used in the average major diameter of flake electroconductive particle and average short
Diameter is respectively 5 μm, 1 μm, the electric conductivity cement of the bottom cement layer and comparative example 1 ~ 3 of embodiment 1 ~ 4 and comparative example 3
The average grain diameter of dendroid electroconductive particle used in layer is 13 μm.Transfer film is laminated on these electric conductivity junction films, then
Buffer film is put, carries out press process on compacting object.
Transfer film uses the polyolefin resin (50 μm of thickness) that 150 DEG C of storage modulus is 10MPa.In addition, buffering
Film uses Mitsui Chemicals Tohcello, Inc. (Mitsui Chemicals Tohcello, Inc.) to produce
CR1012MT4 (150 μm of thickness).Press process is under conditions of 170 DEG C of heating temperature, 30 minutes pressing times, pressure 3MPa
It carries out.
The object of compacting uses simulation electronic component to load made of substrate, groove width is arranged on epoxy glass substrate
0.6mm, groove depth 1mm checker board (being divided into 8 × 8 regions) recess portion after obtained substrate.
As described above, electric conductivity junction film is attached on compacting object by press process.Then, to having removed buffer film
All adjacent areas are measured as shown in Figure 4, Figure 5 with the electric conductivity junction film of embodiment 1 ~ 4 and comparative example 1 ~ 3 after transfer film
Between sheet resistance value (total 112 times).Specifically, as shown in figure 4, having on epoxy glass substrate 20 recessed by above-mentioned channel-shaped
Portion 20b is divided into 8 × 8 region 20a.Each recess portion 20b is on epoxy glass substrate 20 with the clathrate setting in the interval 10mm.
Press process electric conductivity junction film 1 and at least part of all areas 20a is covered on epoxy glass substrate 20.That is, epoxy
6 × 6 region 20a of the central part on glass substrate 20 are all covered by electric conductivity junction film 1, are located at epoxy glass substrate
A part of the region 20a at 20 edge is covered by electric conductivity junction film 1.Press process is carried out in the form of this, then electric conductivity connects
The recess portion 20b of epoxy glass substrate 20 can be filled by closing film 1.With this, recess portion 1b is formed on electric conductivity junction film 1.That is, electric conductivity
The region 1a marked off by recess portion 1b is formed on junction film 1.Then, as shown in figure 5, measurement clips the recessed of electric conductivity junction film 1
Sheet resistance value R between the adjacent region 1a of portion 1b.To (112 between embodiment 1 ~ 4 and all areas 1a of comparative example 1 ~ 3
Kind of combination is each primary) carry out the measurement of sheet resistance value R as above.Sheet resistance value R's in embodiment 1 ~ 4 and comparative example 1 ~ 3
Maximum value, minimum value, average value and its assessment are shown in Table 1.
In addition, assessment is implemented as follows.Specifically, when the average value of sheet resistance value, maximum value and minimum value are equal
The case where when not up to 1 Ω, is denoted as "○".By the average value of sheet resistance value less than 1 Ω but maximum value 1 Ω or more situation
It is denoted as " △ ".When the average value and maximum value of sheet resistance value are denoted as " X " in the situation of 1 Ω or more.
Table 1
It is learnt from table 1, electric conductivity cement layer is conductive by the isotropism of sheet-containing shape electroconductive particle in conductive film
Material is formed, and bottom cement layer is formed by embodiment by the anisotropic conductive material of the electroconductive particle containing dendroid and obtains
Obtained good result.For example, having replaced the sequence of stacking in embodiment 2 and comparative example 1, but the sheet resistance value of embodiment 2
Average value less than comparative example 1 sheet resistance value average value 1/10th, illustrate that above structure can obtain good result.
Number explanation
1 electric conductivity junction film
The region 1a
1b recess portion
2 electronic components
3 encapsulating materials
4 substrates
10 electric conductivity cement layers
10a electroconductive particle
11 bottom cement layers
11a electroconductive particle
12 transfer films
13 buffer films
20 epoxy glass substrates
The region 20a
20b recess portion
100 printed wiring boards
300 electronic equipments
Claims (7)
1. a kind of electric conductivity junction film enters its position corresponding with the truncation recess portion of printed wiring board by press process
To the stretching, extension of film surface direction and overlay electronic element in the slot of the truncation recess portion, electromagnetic wave is shielded with this, electric conductivity engagement
Film be characterized in that containing:
By containing the first electroconductive particle isotropism conductive material formed electric conductivity cement layer,
And in the press process positioned at than the electric conductivity cement layer close to the electronic component side position,
The bottom cement layer formed by the anisotropic conductive material containing the second electroconductive particle；
Wherein, first electroconductive particle be thickness before the stretching, extension that average major diameter is the electric conductivity cement layer 15% ~
25% flaky particle,
Contained first electroconductive particle is 40 weight of weight % ~ 80 % of the electric conductivity cement layer total weight.
2. electric conductivity junction film according to claim 1, it is characterised in that:
The average grain diameter of second electroconductive particle is 10% ~ 50% of thickness before the bottom cement layer stretches,
Contained second electroconductive particle is 40 weight of weight % ~ 80 % of the bottom cement layer total weight.
3. electric conductivity junction film according to claim 2, it is characterised in that:
Second electroconductive particle is dendroid particle.
4. according to claim 1 to 3 its any one of described in electric conductivity junction film, it is characterised in that:
The thickness of the electric conductivity cement layer is 10 μm ~ 30 μm,
The thickness of the bottom cement layer is 40 μm ~ 80 μm.
5. electric conductivity junction film according to claim 1, it is characterised in that:
Transfer film is laminated on the face opposite with bottom cement layer of the electric conductivity cement layer,
Storage modulus of transfer film under the conditions of 150 DEG C or more of temperature is 20MPa or less.
6. a kind of shielding printed wiring board, it is characterised in that:
Containing claim 1 to 5 its any one of described in electric conductivity junction film.
7. a kind of electronic equipment, it is characterised in that:
Contain shielding printed wiring board as claimed in claim 6.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-113849 | 2014-06-02 | ||
| JP2014113849 | 2014-06-02 | ||
| PCT/JP2015/065549 WO2015186624A1 (en) | 2014-06-02 | 2015-05-29 | Electroconductive adhesive film, printed circuit board, and electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106465568A CN106465568A (en) | 2017-02-22 |
| CN106465568B true CN106465568B (en) | 2019-01-01 |
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| CN201580028537.1A Active CN106465568B (en) | 2014-06-02 | 2015-05-29 | Electric conductivity junction film, printed wiring board and electronic equipment |
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|---|---|
| JP (1) | JP6190528B2 (en) |
| KR (1) | KR101850809B1 (en) |
| CN (1) | CN106465568B (en) |
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| WO (1) | WO2015186624A1 (en) |
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| JP2017143210A (en) * | 2016-02-12 | 2017-08-17 | 住友ベークライト株式会社 | Method for manufacturing electronic component sealing body and method for manufacturing electronic device |
| US9953929B2 (en) * | 2016-03-18 | 2018-04-24 | Intel Corporation | Systems and methods for electromagnetic interference shielding |
| TWI613943B (en) * | 2016-07-12 | 2018-02-01 | Method for manufacturing wafer fixed structure | |
| JP7107231B2 (en) * | 2017-02-17 | 2022-07-27 | 昭和電工マテリアルズ株式会社 | adhesive film |
| JP2019029549A (en) * | 2017-08-01 | 2019-02-21 | 住友ベークライト株式会社 | Film set |
| JP6711423B2 (en) * | 2017-08-31 | 2020-06-17 | 住友ベークライト株式会社 | Film for electromagnetic wave shielding |
| KR20190076250A (en) | 2017-12-22 | 2019-07-02 | 삼성전자주식회사 | Semiconductor package and semiconductor Module |
| JP6504302B1 (en) | 2018-06-12 | 2019-04-24 | 東洋インキＳｃホールディングス株式会社 | Electromagnetic wave shield sheet, component mounting board, and electronic device |
| CN108601241B (en) | 2018-06-14 | 2021-12-24 | 环旭电子股份有限公司 | SiP module and manufacturing method thereof |
| KR102522663B1 (en) | 2018-10-02 | 2023-04-18 | 삼성전자주식회사 | Electronic device comprising structure connecting display and conductive supporting member with conductive adhesive member |
| JP6497477B1 (en) | 2018-10-03 | 2019-04-10 | 東洋インキＳｃホールディングス株式会社 | Electromagnetic wave shield sheet and electronic component mounting board |
| WO2020105622A1 (en) | 2018-11-21 | 2020-05-28 | タツタ電線株式会社 | Shield package |
| KR102248813B1 (en) * | 2019-12-02 | 2021-05-11 | 엘티메탈 주식회사 | Method for manufacturing porous thermoelectric material and thermoelectric device comprising porous thermoelectric material |
| WO2023188206A1 (en) * | 2022-03-30 | 2023-10-05 | 東洋インキＳｃホールディングス株式会社 | Metal sheet bonding agent, method for manufacturing reinforcement member for printed wiring board, and wiring board and method for manufacturing same |
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- 2015-05-29 KR KR1020167026947A patent/KR101850809B1/en active IP Right Grant
- 2015-05-29 JP JP2016525140A patent/JP6190528B2/en active Active
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| Publication number | Publication date |
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| JP6190528B2 (en) | 2017-08-30 |
| JPWO2015186624A1 (en) | 2017-04-20 |
| CN106465568A (en) | 2017-02-22 |
| TW201606043A (en) | 2016-02-16 |
| TWI627256B (en) | 2018-06-21 |
| KR20170013202A (en) | 2017-02-06 |
| WO2015186624A1 (en) | 2015-12-10 |
| KR101850809B1 (en) | 2018-04-20 |
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