CN106463447B - 基板和形成基板的方法 - Google Patents

基板和形成基板的方法 Download PDF

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Publication number
CN106463447B
CN106463447B CN201580024484.6A CN201580024484A CN106463447B CN 106463447 B CN106463447 B CN 106463447B CN 201580024484 A CN201580024484 A CN 201580024484A CN 106463447 B CN106463447 B CN 106463447B
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CN
China
Prior art keywords
dielectric layer
trace
hole
substrate
photoimageable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201580024484.6A
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English (en)
Chinese (zh)
Other versions
CN106463447A (zh
Inventor
H·W·乔玛
O·J·比奇厄
K·康
C-K·金
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Qualcomm Inc
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Qualcomm Inc
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Publication date
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Publication of CN106463447A publication Critical patent/CN106463447A/zh
Application granted granted Critical
Publication of CN106463447B publication Critical patent/CN106463447B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42Vias, e.g. via plugs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698Local interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structure Of Printed Boards (AREA)
CN201580024484.6A 2014-05-13 2015-04-27 基板和形成基板的方法 Expired - Fee Related CN106463447B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/276,763 2014-05-13
US14/276,763 US9679841B2 (en) 2014-05-13 2014-05-13 Substrate and method of forming the same
PCT/US2015/027806 WO2015175197A1 (en) 2014-05-13 2015-04-27 Substrate and method of forming the same

Publications (2)

Publication Number Publication Date
CN106463447A CN106463447A (zh) 2017-02-22
CN106463447B true CN106463447B (zh) 2018-06-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580024484.6A Expired - Fee Related CN106463447B (zh) 2014-05-13 2015-04-27 基板和形成基板的方法

Country Status (5)

Country Link
US (1) US9679841B2 (enExample)
EP (1) EP3143640B1 (enExample)
JP (1) JP6306743B2 (enExample)
CN (1) CN106463447B (enExample)
WO (1) WO2015175197A1 (enExample)

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US10340251B2 (en) 2017-04-26 2019-07-02 Nxp Usa, Inc. Method for making an electronic component package
US10157833B1 (en) * 2017-05-23 2018-12-18 Globalfoundries Inc. Via and skip via structures
US20180350630A1 (en) * 2017-06-01 2018-12-06 Qualcomm Incorporated Symmetric embedded trace substrate
US10325842B2 (en) * 2017-09-08 2019-06-18 Advanced Semiconductor Engineering, Inc. Substrate for packaging a semiconductor device package and a method of manufacturing the same
WO2019066813A1 (en) * 2017-09-27 2019-04-04 Intel Corporation METHOD, DEVICE AND SYSTEM FOR PROVIDING GRAZED METALLIZATION STRUCTURES
US11387187B2 (en) * 2018-06-28 2022-07-12 Intel Corporation Embedded very high density (VHD) layer
US20200083154A1 (en) 2018-09-10 2020-03-12 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Component Carrier With a Photoimageable Dielectric Layer and a Structured Conductive Layer Being Used as a Mask for Selectively Exposing the Photoimageable Dielectric Layer With Electromagnetic Radiation
US10517167B1 (en) * 2018-10-19 2019-12-24 Eagle Technology, Llc Systems and methods for providing a high speed interconnect system with reduced crosstalk
US10615027B1 (en) 2018-10-25 2020-04-07 International Business Machines Corporation Stack viabar structures
EP3723459A1 (en) 2019-04-10 2020-10-14 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier with high passive intermodulation (pim) performance
US11056850B2 (en) 2019-07-26 2021-07-06 Eagle Technology, Llc Systems and methods for providing a soldered interface on a printed circuit board having a blind feature
US11602800B2 (en) 2019-10-10 2023-03-14 Eagle Technology, Llc Systems and methods for providing an interface on a printed circuit board using pin solder enhancement
US11283204B1 (en) 2020-11-19 2022-03-22 Eagle Technology, Llc Systems and methods for providing a composite connector for high speed interconnect systems
US11682607B2 (en) * 2021-02-01 2023-06-20 Qualcomm Incorporated Package having a substrate comprising surface interconnects aligned with a surface of the substrate
KR20230055561A (ko) 2021-10-19 2023-04-26 삼성전기주식회사 인쇄회로기판 및 이를 포함하는 전자부품 패키지
US12412822B2 (en) * 2021-12-31 2025-09-09 Samsung Electro-Mechanics Co., Ltd. Semiconductor chip and semiconductor package including the same
US12035482B2 (en) * 2022-02-07 2024-07-09 Eagle Technology, Llc Electronic device with multi-diameter female contacts and related methods

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US20040056344A1 (en) * 2001-11-22 2004-03-25 Tsuyoshi Ogawa Multi-chip circuit module and method for producing the same
EP1519414A1 (en) * 2002-07-03 2005-03-30 Sony Corporation Multilayer wiring circuit module and method for fabricating the same
US20100139964A1 (en) * 2008-12-08 2010-06-10 Samsung Electro-Mechanics Co., Ltd. Printed circuit board comprising metal bump and method of manufacturing the same
US20110169164A1 (en) * 2010-01-13 2011-07-14 Shinko Electric Industries Co., Ltd. Wiring substrate, manufacturing method thereof, and semiconductor package
CN102405524A (zh) * 2009-02-20 2012-04-04 国家半导体公司 集成电路微模块

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US20040056344A1 (en) * 2001-11-22 2004-03-25 Tsuyoshi Ogawa Multi-chip circuit module and method for producing the same
EP1519414A1 (en) * 2002-07-03 2005-03-30 Sony Corporation Multilayer wiring circuit module and method for fabricating the same
US20100139964A1 (en) * 2008-12-08 2010-06-10 Samsung Electro-Mechanics Co., Ltd. Printed circuit board comprising metal bump and method of manufacturing the same
CN102405524A (zh) * 2009-02-20 2012-04-04 国家半导体公司 集成电路微模块
US20110169164A1 (en) * 2010-01-13 2011-07-14 Shinko Electric Industries Co., Ltd. Wiring substrate, manufacturing method thereof, and semiconductor package

Also Published As

Publication number Publication date
JP6306743B2 (ja) 2018-04-04
EP3143640A1 (en) 2017-03-22
CN106463447A (zh) 2017-02-22
US9679841B2 (en) 2017-06-13
WO2015175197A1 (en) 2015-11-19
EP3143640B1 (en) 2020-01-08
JP2017516308A (ja) 2017-06-15
US20150333004A1 (en) 2015-11-19

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Granted publication date: 20180629

Termination date: 20210427