CN106463423B - 放电检查装置、打线装置以及放电检查方法 - Google Patents
放电检查装置、打线装置以及放电检查方法 Download PDFInfo
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Abstract
本发明涉及一种放电检查装置、打线装置以及放电检查方法。放电检查装置(50)是检查对炬电极(48)与金属线(42)之间施加电压而进行放电的打线装置的放电的放电检查装置(50),且包括:电流检测部(53),检测流经金属线(42)的放电电流;计时部(56b),计测自施加电压至检测出放电电流为止的放电检测时间;以及放电判定部(57a),基于放电检测时间而判定放电是否异常。本发明可检测放电异常。
Description
技术领域
本发明的若干实施方式涉及一种放电检查装置、打线(wire bonding)装置以及放电检查方法。
背景技术
在半导体装置的制造方法中,例如广泛使用通过金属线(wire)将半导体元件(device)的电极与基板的配线电性连接的打线。作为打线的典型例,可列举所谓的球形接合(ball bonding)方式。即,对电极与插通接合工具(bonding tool)(例如毛细管(capillary))的金属线之间施加电压而进行放电,从而在金属线的前端形成球(ball)。然后,使接合工具朝向半导体元件的电极下降,并对所述球赋予负荷及超声波振动,而将金属线的球部分接合于半导体元件的电极上。
作为球形接合方式的打线装置,已知如下:为了在金属线的前端形成均匀的球,将通过在电极与金属线的前端之间产生的放电电压以及放电电流来形成球时的焦耳(Joule)热相当值与预先设定的热量设定值进行比较而控制放电条件(例如,参照专利文献1)。
现有技术文献
专利文献
专利文献1:日本专利特开平2-181943号公报
另外,现有的打线装置具有判定金属线是否已插通接合工具的未插通判定功能,例如,在金属线自接合工具脱落的情况等金属线未插通接合工具时,使打线装置停止。
另一方面,在金属线未自接合工具的前端延伸出的情况下或自接合工具的前端延伸出的金属线短的情况下,虽在电极与接合工具或金属线之间会产生放电,但在金属线的前端未形成球或未形成所需的球,因此认为此种放电异常。
然而,在这些情况下,由于金属线已插通接合工具,故而无法利用未插通判定功能检测出。其结果,现有的打线装置会在未形成球的状况下或不良球的状况下实施打线,而产生半导体元件的不良。
发明内容
[发明所要解决的问题]
本发明的若干实施方式是鉴于所述问题而完成,目的之一在于提供一种可判定放电是否异常的放电检查装置、打线装置以及放电检查方法。
[解决问题的技术手段]
本发明的一实施方式的放电检查装置是检查对电极与金属线之间施加电压而进行放电的打线装置的放电的放电检查装置,所述放电检查装置包括:电流检测部,检测流经金属线的放电电流;计时部,计测自施加电压至检测出放电电流为止的放电检测时间;以及放电判定部,基于放电检测时间而判定放电是否异常。
在所述放电检查装置中,也可为放电判定部判定放电检测时间是否超出基于阈值的规定范围,在放电检测时间超出规定范围时,判定为放电异常。
在所述放电检查装置中,也可为放电判定部在判定为放电不异常时,将放电检测时间存储于存储单元,且所述放电检查装置还包括阈值设定部,所述阈值设定部基于存储于存储单元的放电检测时间而设定阈值。
在所述放电检查装置中,也可为当在存储单元中存储有放电检测时间时,阈值设定部基于最近存储的规定数的放电检测时间而设定阈值。
在所述放电检查装置中,也可还包括信号输出部,所述信号输出部在由放电判定部判定为放电异常时,将表示放电异常的放电异常信号输出至打线装置。
在所述放电检查装置中,也可为还包括检测电压的电压检测部,且放电判定部基于放电检测时间与电压而判定放电是否异常。
本发明的一实施方式的打线装置包括所述放电检查装置。
本发明的一实施方式的放电检查方法是检查对电极与金属线之间施加电压而进行放电的打线装置的放电的放电检查方法,所述放电检查方法包括:电流检测步骤,检测流经金属线的放电电流;计时步骤,计测自施加电压至检测出放电电流为止的放电检测时间;以及放电判定步骤,基于放电检测时间而判定放电是否异常。
[发明的效果]
根据本发明,通过基于自施加电压至检测出放电电流为止的放电检测时间来判定放电是否异常,当在金属线的前端完全未自接合工具延伸出的情况或未延伸出规定长度的金属线的情况下进行了放电时,可判定为所述放电异常。因此,当在金属线的前端未形成球时或未形成所需的球时,可抑制打线装置实施打线,从而可使半导体元件的不良率降低(提高良率)。
附图说明
图1是用以说明本实施方式的打线装置的一例的概略构成图。
图2是用以说明本实施方式的放电检查装置的一例的概略构成图。
图3是用以说明本实施方式的放电检查方法的一例的流程图(flow chart)。
图4是用以说明自接合工具延伸出的金属线的图。
图5(A)至图5(C)是用以说明自接合工具延伸出的金属线的图。
图6是与本实施方式的放电检查方法的一例相关的定时图(timing chart)。
图7是与本实施方式的放电检查方法的一例相关的定时图。
图8是与本实施方式的放电检查方法的一例相关的定时图。
[符号的说明]
1:打线装置
10:XY驱动机构
12:Z驱动机构
14:支轴
16:接合台
20:接合臂
30:超音波焊头
32:焊头固定螺钉
40:接合工具(毛细管)
42:金属线
43:球
44:线夹
46:线张力器
48:炬电极
50:放电检查装置
51:高电压电路部
52:电压产生部
53:电流检测部
54:电压检测部
55:控制电路部
56:放电控制部
56a:放电开始部
56b:计时部
56c:放电检测部
57:检查控制部
57a:放电判定部
57b:阈值设定部
57c:信号输出部
60:超音波振动元件
80:控制部
82:操作部
84:显示部
100:半导体元件
Ih:放电电流
L1:规定长度
L2:短于规定长度L1的长度
L3:长于规定长度L1的长度
S10:放电检查处理
S11~S18:步骤
t1:时刻
t2:时刻
t4:时刻
t5:时刻
Tth:阈值
Th1、Th2、Th3:放电检出时间
Vh:电压
α:规定值
X、Y、Z:轴
具体实施方式
以下,对本发明的实施方式进行说明。在以下的附图的记载中,相同或类似的部分以相同或类似的符号表示。但,附图为示意性。因此,具体的尺寸等应对照以下的说明进行判断。而且,当然在附图相互间也包含相互的尺寸的关系或比率不同的部分。进而,本申请发明的技术范围不应限定于所述实施方式进行解释。另外,在以下的说明中,将附图的上侧称为“上”,将下侧称为“下”,将左侧称为“左”,将右侧称为“右”。
图1至图8用以表示本发明的放电检查装置、打线装置以及放电检查方法的一实施方式。图1是用以说明本实施方式的打线装置的一例的概略构成图。本实施方式的打线装置1是用于实施打线的装置。作为一例,所述打线装置1包括本实施方式的放电检查装置50。
如图1所示,打线装置1包括XY驱动机构10、接合臂(bonding arm)20、超声波焊头(ultrasonic horn)30、接合工具40、放电检查装置50、超声波振动元件60、以及控制部80。
XY驱动机构10构成为可沿XY轴方向(平面方向)移动,在XY驱动机构(线性马达(linear motor))10,设置有使接合臂20可沿Z轴方向(上下方向)移动的Z驱动机构(线性马达)12。
接合臂20由支轴14支撑,相对于XY驱动机构10而摆动自如地构成。接合臂20是以自XY驱动机构10延伸出的方式形成为大致长方体,且在打线时,接近至距放置有作为接合对象的半导体元件100的接合台(bonding stage)16为规定距离。
超声波焊头30通过焊头固定螺钉32而安装于接合臂20的前端部。超声波焊头30在其前端部保持有接合工具40。通过超声波振动元件60产生超声波振动,所述超声波振动通过超声波焊头30而传递至接合工具40,从而可经由接合工具40对接合对象赋予超声波振动。超声波振动元件60例如为压电式(piezo)振动元件。
接合工具40作为压接元件发挥功能并且用于引导金属线42,例如为设置有插通孔的毛细管。此时,构成为在接合工具40的插通孔中插通有用于接合的金属线42,且可将金属线42的一部分自所述接合工具40的前端抽出。接合工具40利用弹簧力等而可更换地安装于超声波焊头30。而且,在接合工具40的上方设置有线夹(wire clamper)44,线夹44构成为在规定的定时将金属线42束紧或释放。在线夹44的更上方设置有线张力器(tensioner)46,线张力器46构成为供金属线42插通,且对接合中的金属线42赋予适度的张力(tension)。
金属线42的材料自容易加工与电阻低等方面适当选择,例如使用金(Au)或铜(Cu)或银(Ag)等。
炬电极(torch electrode)48用于产生放电(火花(spark))。炬电极48构成为通过放电的热而可在自接合工具40的前端抽出的金属线42的前端(一端)形成球43。而且,炬电极48的位置固定,在放电时,接合工具40接近至距炬电极48为规定距离,从而在炬电极48与金属线42的前端(一端)之间进行适当的放电。
放电检查装置50是用于本实施方式的打线装置1的放电检查方法的装置。而且,放电检查装置50连接于炬电极48,用于进行通过炬电极48的放电。进而,放电检查装置50与控制部80之间构成为可收发信号,以使其中一者可使另一者的功能运作或停止。
控制部80连接于XY驱动机构10、Z驱动机构12、超声波焊头30(超声波振动元件60)、以及放电检查装置50,通过利用控制部80控制这些构成的动作,可进行用于打线的必要的处理。控制部80包括接口(interface)(未图示),所述接口在与例如XY驱动机构10、Z驱动机构12、超声波焊头30(超声波振动元件60)、放电检查装置50等所述各构成之间进行信号的收发。
另外,在控制部80,连接有用以输入控制信息的操作部82、与用以输出控制信息的显示部84,由此,作业人员可一面利用显示部84识别画面,一面利用操作部82输入必要的控制信息。控制部80例如可由包括中央处理器(Central Processing Unit,CPU)以及存储器(memory)等的计算机(computer)装置构成,且在存储器中预先存储有用于进行打线所需的处理的程序(program)或数据(data)等。
图2是用以说明本实施方式的放电检查装置的一例的概略构成图。放电检查装置50用于检查打线装置1的放电。如图2所示,放电检查装置50包括高电压电路部51以及控制电路部55。
高电压电路部51用于进行放电以及用于检测与放电相关的电信号。高电压电路部51包括电压产生部52、电流检测部53、以及电压检测部54。
电压产生部52用于产生电压。电压产生部52连接于控制电路部55,基于来自控制电路部55的控制信号而产生规定的高电压,例如最大5000[V]左右的高电压。而且,电压产生部52连接于炬电极48以及与自接合工具40抽出的金属线42的前端(一端)为相反侧的金属线42的另一端。电压产生部52以将所产生的高电压施加于炬电极48与金属线42之间的方式构成。由此,在炬电极48与金属线42的前端(一端)之间进行放电。
电压产生部52可包含例如升压用变压器(变压器(transformer))而构成。作为升压用变压器,例如使用具有定电压功能及定电流功能两者的线性输出型变压器。
电流检测部53用于检测电流,且连接于金属线42的另一端。而且,电流检测部53连接于控制电路部55,且构成为当通过放电而在金属线42流动放电电流时将放电电流的检测信号输出至控制电路部55。
电流检测部53可包含例如放电电流检测用的电阻器、成为阈值的电源、以及比较器(comparator)等而构成。在此例的情况下,电流检测部53在放电电流的电压值大于电源的电压值时,输出放电电流的检测信号。
电压检测部54用于检测电压,且连接于炬电极48及金属线42的另一端。而且,电压检测部54连接于控制电路部55,且构成为当在炬电极48及金属线42之间施加有电压时将电压信号输出至控制电路部55。
控制电路部55用于控制放电以及用于控制放电的检查。控制电路部55包括放电控制部56以及检查控制部57。放电控制部56与检查控制部57之间以可相互收发信号或信息(数据)的方式构成。
放电控制部56构成为控制例如对炬电极48及金属线42之间施加的电压的开始、结束、电压值、以及施加所述电压值的时间等。放电控制部56可包含例如现场可编程门阵列(Field Programmable Gate Array,FPGA)等而构成,依照由硬件描述语言(HardwareDescription Language,HDL)所指定的程序进行动作。而且,放电控制部56包括接口(未图示),所述接口在与例如电压产生部52、电流检测部53、电压检测部54等高电压电路部51的所述各构成之间进行信号的收发。进而,放电控制部56包括放电开始部56a、计时部56b、以及放电检测部56c作为放电控制部56的功能构成的一例。
放电开始部56a基于来自控制部80的控制信号,将开始对炬电极48及金属线42之间施加电压的电压施加开始的控制信号输出至电压产生部52。
而且,放电开始部56a将电压施加开始的控制信号输出至电压产生部52,并且将开始计测时间的开始信号(起始信号)输出至计时部56b。
计时部56b用于计测规定期间内的时间。计时部56b可包括例如振荡电路(时钟产生器(clock generator))或即时时钟(Real Time Clock,RTC)等具有计时功能的集成电路(Integrated Circuit,IC)芯片,根据开始信号(起始信号)而开始计测时间,根据结束信号(终止信号)而结束计测时间并输出所计测的时间。
放电检测部56c基于来自电流检测部53的放电电流的检测信号,将结束计测时间的结束信号(终止信号)输出至计时部56b。此时,由计时部56b所计测的时间被输入至放电检测部56c。由此,利用计时部56b计测出自施加电压至检测出放电电流为止的放电检测时间。
而且,放电检测部56c将由计时部56b所计测的放电检测时间的信息输出至检查控制部57。进而,放电检测部56c基于来自电压检测部54的电压信号,将电压值的信息输出至检查控制部57。
检查控制部57可包含例如CPU(Central Processing Unit)以及存储器(存储单元)等而构成,依照由规定的语言所指定的程序进行动作。而且,检查控制部57包括放电判定部57a、阈值设定部57b、以及信号输出部57c作为检查控制部57的功能构成的一例。
放电判定部57a基于来自放电检测部56c的放电检测时间的信息,而判定放电是否异常。或者,放电判定部57a基于来自放电检测部56c的放电检测时间的信息以及电压值的信息,而判定放电是否异常。
而且,放电判定部57a在判定为放电不异常、即正常时,将来自放电检测部56c的放电检测时间的信息写入存储器(存储单元)中予以存储。
检查控制部57所具备的存储器(存储单元)具有可存储规定数,例如20个放电检测时间的信息的存储容量(存储区域)。放电检测时间的信息在超过规定数之前追加存储于存储器(存储单元)中,当超过规定数时,自存储器(存储单元)中删除最早的信息后进行追加存储。由此,将最近(最新)的规定数的放电检测时间的信息存储于存储器(存储单元)中。
阈值设定部57b基于存储于存储器(存储单元)的放电检测时间的信息而设定阈值。所述阈值用于与自放电检测部56c输入的放电检测时间的信息进行比较,且在存储器(存储单元)中预先存储有初始值。
信号输出部57c基于放电判定部57a的判定结果,将表示判定结果的规定的信号输出至控制部80、即打线装置1。规定的信号例如为表示放电正常的正常放电信号或表示放电异常的异常放电信号等。
在本实施方式中,示出检查控制部57包括存储放电检测时间的信息的存储器(存储单元)的例子,但并不限定于此。也可为控制部80包括存储放电检测时间的信息的存储器(存储单元)。
接下来,参照图3至图8,对检查打线装置1的放电的方法进行说明。
图3是表示本实施方式的放电检查方法的一例的流程图。如图3所示,开始放电检查处理S10后,首先,放电开始部56a将电压施加开始的控制信号输出至电压产生部52,而开始对炬电极48及金属线42之间施加电压(S11)。与此同时,放电开始部56a将开始信号(起始信号)输出至计时部56b,而开始计测放电检测时间(S12)。
其次,放电检测部56c基于自电流检测部53输入的放电电流的检测信号,而判定是否检测出放电电流(S13),在检测出放电电流之前重复进行S13的步骤。
在S13的判定结果为检测出放电电流的情况下,放电检测部56c将结束信号(终止信号)输出至计时部56b,而结束计测放电检测时间(S14)。
继而,放电判定部57a基于自放电检测部56c输入的放电检测时间,而判定放电是否异常(S15)。
图4是用以说明自接合工具延伸出的金属线的图,且是表示自接合工具延伸出的金属线正常的情况的一例的图。如图4所示,在自接合工具40的前端延伸出规定长度L1的金属线42的情况下,若对炬电极48及金属线42之间施加电压而产生放电,可在金属线42的前端(一端)形成所需的球。此时,认为所述放电正常(正常放电)。
图5是用以说明自接合工具延伸出的金属线的图,图5(A)是表示自接合工具延伸出的金属线异常的情况的一例的图,图5(B)是表示自接合工具延伸出的金属线异常的情况的另一例的图,图5(C)是表示自接合工具延伸出的金属线异常的情况的又一例的图。另一方面,如图5(A)所示,在虽在接合工具40中插通有金属线42,但金属线42未自接合工具40的前端延伸出的情况下,即便对炬电极48及金属线42之间施加电压,炬电极48及金属线42之间也不会产生放电,从而无法在金属线42的前端(一端)形成球(未形成球)。此时,也存在放电电流经由接合工具40内的金属线42进行流动或无法放电的情况。而且,如图5(B)所示,在自接合工具40的前端延伸出长度L2短于规定长度L1(L2<L1)的金属线42的情况下,若对炬电极48及金属线42之间施加电压,虽炬电极48及金属线42之间会产生放电,但也无法在金属线42的前端(一端)形成所需的球(形成不良球)。进而,如图5(C)所示,在自接合工具40的前端延伸出长度L3长于规定长度L1(L3>L1)的金属线42的情况下,若对炬电极48及金属线42之间施加电压,虽炬电极48及金属线42之间会产生放电,但此时也同样地无法在金属线42的前端(一端)形成所需的球(形成不良球)。在图5(A)、图5(B)、以及图5(C)的情况下,虽进行了放电并检测出放电电流,但未在金属线42的前端形成球或无法形成所需的球,因此认为这些放电异常(异常放电)。
此处,本发明人发现在图5(A)以及图5(B)的情况下,自施加电压至放电为止的放电检测时间与图4的情况相比变迟。认为其因素之一为如下:因炬电极48与接合工具40或金属线42的前端之间的距离(间隙(gap))变长,在破坏所述距离(间隙)的绝缘而放电之前需要时间。而且,本发明人发现在图5(C)的情况下,自施加电压至放电为止的放电检测时间与图4的情况相比变早。认为其因素之一为如下:因炬电极48与金属线42的前端之间的距离(间隙)变短,在破坏所述距离(间隙)的绝缘而放电之前不需要时间。
图6、图7、以及图8是与本实施方式的放电检查方法的一例相关的定时图,图6表示放电正常的情况的一例,图7表示放电异常的情况的一例,图8表示放电异常的情况的另一例。另外,图6的定时图与图4的例子对应,图7的定时图与图5(A)或图5(B)的例子对应,图8的定时图与图5(C)的例子对应。在图4的例子的情况下,如图6所示,当在时刻t1,放电开始部56a将电压施加开始的控制信号输出至电压产生部52时,电压Vh被施加至炬电极48及金属线42之间。所述电压Vh随时间经过而增加(上升),当在时刻t2,在炬电极48及金属线42之间产生放电时,电压Vh降低(下降)至规定值,并且在金属线42流动放电电流Ih。此时,电流检测部53检测出所述放电电流Ih并将放电电流的检测信号输出至放电检测部56c,且通过计时部56b计测出时刻t1及时刻t2之间的时间、即放电检测时间Th1。在图6的例子的情况下,放电检测时间Th1为正常的时间,例如为33[μs]左右。
另一方面,在图5(A)或图5(B)的例子的情况下,如图7所示,当在时刻t1,放电开始部56a将电压施加开始的控制信号输出至电压产生部52时,电压Vh被施加至炬电极48及金属线42之间。所述电压Vh随时间经过而增加(上升)。然而,由于金属线42的前端完全未自接合工具40延伸出或延伸出长度L2短于规定长度L1的的金属线42,故而在时刻t2未产生放电。之后,在时刻t4,例如在炬电极48与接合工具40之间产生放电,电压Vh降低(下降)至规定值,并且放电电流Ih经由接合工具40流动至金属线42。此时,电流检测部53检测出所述放电电流Ih并将放电电流的检测信号输出至放电检测部56c,且通过计时部56b计测出时刻t1及时刻t4之间的时间、即放电检测时间Th2。在图7的例子的情况下,放电开始时间Th2为异常的时间,例如为60[μs]左右。而且,在图5(C)的例子的情况下,如图8所示,当在时刻t1,放电开始部56a将电压施加开始的控制信号输出至电压产生部52时,电压Vh被施加至炬电极48及金属线42之间。所述电压Vh随时间经过而增加(上升)。然而,由于自接合工具40延伸出长度L3长于规定长度L1的金属线42,故而在到达时刻t2之前,在时刻t5,在炬电极48及金属线42之间产生放电,电压Vh降低(下降)至规定值,并且在金属线42流动放电电流Ih。此时,电流检测部53检测出所述放电电流Ih并将放电电流的检测信号输出至放电检测部56c,且通过计时部56b计测出时刻t1及时刻t5之间的时间、即放电检测时间Th3。
因此,通过基于自施加电压至检测出放电电流为止的放电检测时间来判定放电是否异常,当如图5(A)、图5(B)、以及图5(C)所示,在金属线42的前端完全未自接合工具40延伸出或未延伸出规定长度L1的金属线42的情况下进行了放电时,可判定为所述放电异常。
在图3所示的S15的步骤中,放电是否异常的判定例如使用阈值Tth而进行。具体而言,放电判定部57a自存储器(存储单元)读出阈值Tth,并对所读出的阈值Tth加上或减去规定值α而决定基于阈值Tth的规定范围Tth±α。另外,规定值α既可为预先存储于存储器(存储单元)的值,也可为经由操作部82以及控制部80由作业人员输入的值。然后,放电判定部57a判定自放电检测部56c输入的放电检测时间是否超出所述规定范围Tth±α。当判定的结果如图6所示,放电检测时间Th1未超出规定范围Tth±α、即包含在规定范围Tth±α内(在规定范围Tth±α内)时(Tth-α≤Th1≤Tth+α),放电判定部57a判定为放电正常。另一方面,当如图7所示,放电检测时间Th2大于规定范围的上限值、即超出规定范围Tth±α时(Th2>Tth+α),放电判定部57a判定为放电异常。而且,当如图8所示,放电检测时间Th3小于规定范围的下限值、即超出规定范围Tth±α时(Th3<Tth-α),放电判定部57a判定为放电异常。如此,通过判定放电检测时间是否超出基于阈值Tth的规定范围Tth±α,可容易地判定放电是否异常。
在本实施方式中,示出放电判定部57a基于自放电检测部56c输入的放电检测时间而判定放电是否异常的例子,但并不限定于此。例如,放电判定部57a也可基于自放电检测部56c输入的放电检测时间以及电压值而判定放电是否异常。
如图3所示,当S15的判定结果为放电不异常(正常)时,放电判定部57a将自放电检测部56c输入的放电检测时间存储于存储器(存储单元)(S16)。
继而,阈值设定部57b基于存储于存储单元(存储器)的放电检测时间而设定(变更)阈值(S17)。由此,基于放电正常时的放电检测时间的阈值Tth成为判定的基准值,因此可高精度地判定放电是否异常。
具体而言,阈值设定部57b例如自存储器(存储单元)读出放电检测时间,将所述放电检测时间设定(变更)为阈值Tth。最后,阈值设定部57b将所设定(变更)的阈值Tth写入存储器(存储单元)中予以存储。
或者,阈值设定部57b例如也可自存储器(存储单元)读出最近存储的规定数的放电检测时间,并算出所述规定数的放电检测时间的平均值。此时,阈值设定部57b将所算出的平均值设定(变更)为阈值Tth。最后,阈值设定部57b将所设定(变更)的阈值Tth写入存储器(存储单元)中予以存储。由此,基于放电正常时的最近(最新)的规定数的放电检测时间的阈值Tth成为判定的基准值,因此,例如即便在因炬电极48的劣化等而导致正常放电的放电检测时间发生变化(偏移(shift))的情况下,也可高精度地判定放电是否异常。
在S17的步骤之后,阈值设定部57b结束放电检查处理S10。
另一方面,在S15的判定结果为放电异常的情况下,信号输出部57c将异常放电信号输出至控制部80(S18)。由此,可使打线装置1停止,因此可防止在未形成球的状况下或不良球的状况下实施打线。
在S18的步骤之后,信号输出部57c结束放电检查处理S10。
在本实施方式中,示出在放电异常的情况下信号输出部57c将异常放电信号输出至控制部80的例子,但并不限定于此。例如,信号输出部57c也可在放电正常的情况下将正常放电信号输出至控制部80。
如此,根据本实施方式,通过基于自施加电压至检测出放电电流为止的放电检测时间来判定放电是否异常,当如图5(A)、图5(B)、以及图5(C)所示,在金属线42完全未自接合工具40延伸出的情况下或未延伸出规定长度L1的金属线42的情况下进行了放电时,可判定为所述放电异常。因此,当在金属线42的前端未形成球时或未形成所需的球时,可抑制打线装置1实施打线,从而可降低半导体元件的不良率(提高良率)。
另外,本发明并不限定于所述实施方式,可进行种种变形而应用。
而且,通过所述发明的实施方式所说明的实施例或应用例可根据用途适当进行组合、或加以变更或者改良后使用,本发明并不限定于所述实施方式的记载。根据权利要求书的记载可知,此种组合而成或加以变更或者改良而成的实施方式也可包含在本发明的技术范围内。
Claims (8)
1.一种放电检查装置,检查对电极与金属线之间施加电压而进行放电的打线装置的所述放电,通过在电极与金属线的前端之间产生的放电电压以及放电电流检查所述放电,所述放电检查装置包括:
电压检测部,检测对用于进行放电的施加于电极与金属线之间的电压;
电流检测部,检测流经所述金属线的放电电流;
计时部,计测自施加所述电压至检测出所述放电电流为止的放电检测时间;以及
放电判定部,基于所述放电检测时间而判定所述电极与所述金属线的所述前端之间的距离是否超出规定值的规定范围,当所述放电判定部判定所述距离超出所述规定值的规定范围时,将表示放电异常的放电异常信号输出至所述打线装置,以停止所述打线装置的操作。
2.根据权利要求1所述的放电检查装置,其中所述放电判定部判定所述放电检测时间是否超出基于阈值的规定范围,在所述放电检测时间超出所述规定范围时,判定为所述放电异常。
3.根据权利要求2所述的放电检查装置,其中所述放电判定部在判定为所述放电不异常时,将所述放电检测时间存储于存储单元,且
所述放电检查装置还包括阈值设定部,所述阈值设定部基于存储于所述存储单元的所述放电检测时间而设定所述阈值。
4.根据权利要求3所述的放电检查装置,其中当在所述存储单元中存储有所述放电检测时间时,所述阈值设定部基于最近存储的规定数的所述放电检测时间而设定所述阈值。
5.根据权利要求2所述的放电检查装置,还包括
信号输出部,在由所述放电判定部判定为所述放电异常时,将表示放电异常的放电异常信号输出至所述打线装置。
6.根据权利要求1所述的放电检查装置,其中
所述放电判定部基于所述放电检测时间与所述电压而判定所述放电是否异常。
7.一种打线装置,包括根据权利要求1至6中任一项所述的放电检查装置。
8.一种放电检查方法,检查对电极与金属线之间施加电压而进行放电的打线装置的放电,通过在电极与金属线的前端之间产生的放电电压以及放电电流检查所述放电,所述放电检查方法包括:
电压检测步骤,检测对用于进行放电的施加于电极与金属线之间的电压;
电流检测步骤,检测流经所述金属线的放电电流;
计时步骤,计测自施加所述电压至检测出所述放电电流为止的放电检测时间;以及
放电判定步骤,基于所述放电检测时间而判定所述电极与所述金属线的所述前端之间的距离是否超出规定值的规定范围,当判定所述距离超出所述规定值的规定范围时,将表示放电异常的放电异常信号输出至所述打线装置,以停止所述打线装置的操作。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11102930A (ja) * | 1997-09-25 | 1999-04-13 | Kaijo Corp | ワイヤボンディングにおけるボール形成装置 |
CN1773786A (zh) * | 2005-10-24 | 2006-05-17 | 中国电子科技集团公司第四十五研究所 | 负高压电子打火成球装置 |
CN101252112A (zh) * | 2007-02-21 | 2008-08-27 | 株式会社新川 | 半导体装置及引线接合方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63119540A (ja) * | 1986-11-07 | 1988-05-24 | Toshiba Seiki Kk | ワイヤボンデイング用のボ−ル形成装置 |
JPS63136640A (ja) * | 1986-11-28 | 1988-06-08 | Toshiba Seiki Kk | ワイヤボンデイング用のボ−ル形成装置 |
JPH06101491B2 (ja) | 1989-01-07 | 1994-12-12 | 三菱電機株式会社 | ワイヤボンデイング方法及びその装置 |
JPH07116888B2 (ja) | 1989-06-14 | 1995-12-18 | ワイケイケイ株式会社 | 連窓サッシ |
JP2835989B2 (ja) * | 1991-05-24 | 1998-12-14 | 株式会社新川 | ワイヤボンダ用ボール形成装置 |
US5496984A (en) * | 1992-01-07 | 1996-03-05 | Mitsubishi Denki Kabushiki Kaisha | Electrical discharge machine and machining method therefor |
JPH06101491A (ja) | 1992-09-21 | 1994-04-12 | Suzuki Motor Corp | エンジンの吸気装置 |
JPH0722456A (ja) * | 1993-06-30 | 1995-01-24 | Mitsubishi Electric Corp | ワイヤボンディングにおけるボール形成装置、その制御方法及びワイヤボンディング装置 |
JP3370543B2 (ja) * | 1997-02-24 | 2003-01-27 | 株式会社新川 | ワイヤボンディング装置用放電異常検出装置及びその方法 |
US6898849B2 (en) * | 2000-09-27 | 2005-05-31 | Texas Instruments Incorporated | Method for controlling wire balls in electronic bonding |
TWI248186B (en) * | 2004-01-09 | 2006-01-21 | Unaxis Internat Tranding Ltd | Method for producing a wedge-wedge wire connection |
JP3786281B2 (ja) * | 2004-11-05 | 2006-06-14 | 株式会社カイジョー | ワイヤボンディング装置 |
JP4397326B2 (ja) * | 2004-12-27 | 2010-01-13 | 株式会社新川 | ボンディング装置 |
CN101291768B (zh) * | 2006-10-20 | 2012-05-02 | 三菱电机株式会社 | 放电加工机的电源控制装置 |
JP2009302141A (ja) * | 2008-06-10 | 2009-12-24 | Kaijo Corp | ワイヤボンディング装置 |
JP5379586B2 (ja) * | 2009-07-16 | 2013-12-25 | 株式会社日本マイクロニクス | 電池短絡部除去装置及び方法 |
JP5741078B2 (ja) * | 2011-03-09 | 2015-07-01 | セイコーエプソン株式会社 | 印刷装置 |
JP5662227B2 (ja) * | 2011-04-05 | 2015-01-28 | 株式会社新川 | ボンディング装置及びボンディングツールの洗浄方法 |
JP2013033726A (ja) * | 2011-06-27 | 2013-02-14 | Tokyo Electron Ltd | 異常検出装置及び異常検出方法 |
US9314869B2 (en) * | 2012-01-13 | 2016-04-19 | Asm Technology Singapore Pte. Ltd. | Method of recovering a bonding apparatus from a bonding failure |
-
2014
- 2014-12-18 TW TW103144200A patent/TWI562252B/zh active
-
2015
- 2015-02-10 JP JP2015562829A patent/JP6255585B2/ja active Active
- 2015-02-10 KR KR1020167025338A patent/KR101897081B1/ko active IP Right Grant
- 2015-02-10 SG SG11201606807SA patent/SG11201606807SA/en unknown
- 2015-02-10 CN CN201580019995.9A patent/CN106463423B/zh active Active
- 2015-02-10 WO PCT/JP2015/053665 patent/WO2015122411A1/ja active Application Filing
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11102930A (ja) * | 1997-09-25 | 1999-04-13 | Kaijo Corp | ワイヤボンディングにおけるボール形成装置 |
CN1773786A (zh) * | 2005-10-24 | 2006-05-17 | 中国电子科技集团公司第四十五研究所 | 负高压电子打火成球装置 |
CN101252112A (zh) * | 2007-02-21 | 2008-08-27 | 株式会社新川 | 半导体装置及引线接合方法 |
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JPWO2015122411A1 (ja) | 2017-03-30 |
JP6255585B2 (ja) | 2018-01-10 |
KR101897081B1 (ko) | 2018-09-10 |
TW201533818A (zh) | 2015-09-01 |
TWI562252B (en) | 2016-12-11 |
WO2015122411A1 (ja) | 2015-08-20 |
KR20160122805A (ko) | 2016-10-24 |
US10607959B2 (en) | 2020-03-31 |
CN106463423A (zh) | 2017-02-22 |
US20160358879A1 (en) | 2016-12-08 |
SG11201606807SA (en) | 2016-09-29 |
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