JP3786281B2 - ワイヤボンディング装置 - Google Patents
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Description
図6(a)及び(b)に示すように、キャピラリ2の先端に送り出されたワイヤ1の先端と放電電極4との間で放電を一定の時間起こさせ、ワイヤ1の先端を溶融してボール20を形成し、キャピラリ2の先端で保持してキャピラリ2を第1ボンディング点15なる半導体チップ13の電極12の直上に位置させる。
次いで、図6(d)に示すようにキャピラリ2を所定のループコントロールに従って上昇させ、第2ボンディング点16となるリード14方向に移動させる。
ボンディング前に検出区間・開始位置、検出しきい値を一括で設定する(ST1,ST2)。なお、検出区間、開始位置、検出しきい値をワイヤ毎に設定することはできない。
図8は、従来のワイヤボンディング装置のDC専用不着検出装置を示すブロック図である。DC専用不着検出装置は、DC特性を有する半導体チップ専用の不着検出を行うものである。
DC専用不着検出装置は、DC用不着検出基板44及びボンディングCPU基板18を有している。ボンディングCPU基板18はI/Oポート32を備えている。DC用不着検出基板44は、I/Oポート33、CPU30、A/Dコンバータ35、増幅器(AMP)37、直流発生器45及び抵抗46を備えている。
ワイヤスプール21より繰り出されたワイヤ1は、ワイヤ1の保持、解放が可能なワイヤカットクランプ3の保持面の間を通り、ワイヤカットクランプ3の直下に位置するキャピラリ2を挿通している。ワイヤスプール21のワイヤの端であるスプールワイヤ端22と、フレームとしてのリードフレーム11を載置する基準電位点であるボンディングステージ17との間には交流ブリッジ回路5が接続されている。
前記固定抵抗R2とスプールワイヤ端22との間には、同軸ケーブル5bが外来ノイズの影響を避けるために接続されている。従って、同軸ケーブル5bの芯線と外被との間で発生する同軸ケーブル5bの静電容量C2が生じ、静電容量C2が等価的に固定抵抗R2とボンディングステージ17との間に接続されることになる。
DCパルスをワイヤ又はバンプに印加する印加手段と、
前記DCパルスを印加して得られる前記ワイヤ又はバンプからの応答波形を検出する検出手段と、
前記応答波形を、ボンディングが不着のワイヤ又はバンプにDCパルスを印加して得られる前記ワイヤ又はバンプからの不着応答波形と比較することにより、ワイヤ又はバンプが正常にボンディング接続されたか否かを判定する判定手段と、
を具備することを特徴とする。
前記検出手段は、前記ワイヤ又はバンプからの応答波形を検出すると共に前記コンデンサからの応答波形を検出するように構成され、
前記可変抵抗は、前記ワイヤ側又は前記バンプ側の容量から検出対象物の容量を除いた容量と前記抵抗との積が、前記コンデンサの容量と前記可変抵抗との積にほぼ等しくなるように調整するものである。
DCパルスをワイヤ又はバンプに印加する印加手段と、
前記DCパルスを印加して得られる前記ワイヤ又はバンプからの応答波形を検出する検出手段と、
ワイヤ又はバンプが正常にボンディング接続されたか否かを判定する判定手段と、
を具備し、
前記判定手段は、前記ワイヤ又はバンプが半導体チップの電極に接触する前に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの不着応答波形を検出し、前記ワイヤ又はバンプが半導体チップの電極に接触した際に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの正常着応答波形を検出し、前記不着応答波形と前記正常着応答波形からしきい値係数を算出し、前記ワイヤ又はバンプが半導体チップの電極にボンディングした後に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの応答波形を検出し、該応答波形を、前記不着応答波形と前記しきい値係数の積によって得られるしきい値と比較することにより判定することを特徴とする。
図1は、本発明の実施の形態による不着検出装置を模式的に示すブロック図である。図2は、図1に示す検出回路の詳細を示す図である。図3は、図1に示す低容量検出回路部とワイヤボンディング装置との配線による接続関係及び正常着波形と不着(オープン)波形を概略的に示す図である。
図4(A)は、図1に示す不着検出装置によって最初の1チップについてしきい値を自動設定しながら不着検出を行う流れを示すフローチャートである。図4(B)は、図1に示す不着検出装置によって2チップ目以降のチップについて不着検出を行う流れを示すフローチャートである。
図5は、図1に示す不着検出装置によって不着検出を行う際、出力電圧Eをワイヤに印加してから時間Tの経過による検出電圧Vcの変化を示す図である。参照符号49は不着(オープン)波形を示しており、参照符号48は正常着波形を示している。参照符号47はステップ状に印加するDCパルス電圧の波形を示している。
T1=−VR1×C1×Ln{1−(Vc1/E)}・・・(1)
T2=−R1×C(W/C+W/F+EFO+配線)×Ln{1−(Vc1/E)}・・・(2)
Claims (6)
- 半導体チップの電極とリードフレームのリードをワイヤによって接続するワイヤボンディング装置又は半導体チップのパッドにバンプをボンディングするワイヤボンディング装置において、
DCパルスをワイヤ又はバンプに印加する印加手段と、
前記DCパルスを印加して得られる前記ワイヤ又はバンプからの応答波形を検出する検出手段と、
前記応答波形を、ボンディングが不着のワイヤ又はバンプにDCパルスを印加して得られる前記ワイヤ又はバンプからの不着応答波形と比較することにより、ワイヤ又はバンプが正常にボンディング接続されたか否かを判定する判定手段と、
を具備することを特徴とするワイヤボンディング装置。 - 前記印加手段は、DCパルスを、抵抗を通してワイヤ又はバンプに印加すると共に可変抵抗を通してコンデンサに印加するように構成され、
前記検出手段は、前記ワイヤ又はバンプからの応答波形を検出すると共に前記コンデンサからの応答波形を検出するように構成され、
前記可変抵抗は、前記ワイヤ側又は前記バンプ側の容量から検出対象物の容量を除いた容量と前記抵抗との積が、前記コンデンサの容量と前記可変抵抗との積にほぼ等しくなるように調整するものである請求項1に記載のワイヤボンディング装置。 - 前記検出手段は前記応答波形を成形又は加工する回路を有することを特徴とする請求項1又は2に記載のワイヤボンディング装置。
- 前記成形又は加工する回路は、微分処理を通して差動アンプで増幅し、この差動増幅した波形をさらにフィルタ処理し、矩形波又は三角波に変換する回路を有することを特徴とする請求項3に記載のワイヤボンディング装置。
- 前記判定手段は、前記不着応答波形としきい値係数の積によって得られるしきい値と前記応答波形を比較することにより判定するものである請求項1乃至4のいずれか一項に記載のワイヤボンディング装置。
- 半導体チップの電極とリードフレームのリードをワイヤによって接続するワイヤボンディング装置又は半導体チップのパッドにバンプをボンディングするワイヤボンディング装置において、
DCパルスをワイヤ又はバンプに印加する印加手段と、
前記ワイヤ又はバンプからの応答波形を検出する検出手段と、
ワイヤ又はバンプが正常にボンディング接続されたか否かを判定する判定手段と、
を具備し、
前記判定手段は、前記ワイヤ又はバンプが半導体チップの電極に接触する前に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの不着応答波形を検出し、前記ワイヤ又はバンプが半導体チップの電極に接触した際に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの正常着応答波形を検出し、前記不着応答波形と前記正常着応答波形からしきい値係数を算出し、前記ワイヤ又はバンプが半導体チップの電極にボンディングした後に、前記印加手段によってDCパルスを前記ワイヤ又はバンプに印加し、前記検出手段によって前記ワイヤ又はバンプからの応答波形を検出し、該応答波形を、前記不着応答波形と前記しきい値係数の積によって得られるしきい値と比較することにより判定することを特徴とするワイヤボンディング装置。
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SG200507324A SG122023A1 (en) | 2004-11-05 | 2005-10-27 | Wire bonding apparatus |
MYPI20055099A MY139635A (en) | 2004-11-05 | 2005-10-28 | Wire bonding apparatus |
TW094138445A TWI298915B (en) | 2004-11-05 | 2005-11-02 | Wire bonding apparatus |
KR1020050105128A KR100725125B1 (ko) | 2004-11-05 | 2005-11-03 | 와이어본딩 장치 |
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SG11201503764YA (en) * | 2012-11-16 | 2015-06-29 | Shinkawa Kk | Wire-bonding apparatus and method of wire bonding |
TWI562252B (en) * | 2014-02-17 | 2016-12-11 | Shinkawa Kk | Detecting discharging device, wire bonding device and detecting discharging method |
TWI567839B (zh) * | 2014-08-27 | 2017-01-21 | 矽品精密工業股份有限公司 | 打線構造及銲線形成方法 |
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