CN106400102A - 一种可实现单晶在线退火的生长设备及其方法 - Google Patents
一种可实现单晶在线退火的生长设备及其方法 Download PDFInfo
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- CN106400102A CN106400102A CN201610950624.9A CN201610950624A CN106400102A CN 106400102 A CN106400102 A CN 106400102A CN 201610950624 A CN201610950624 A CN 201610950624A CN 106400102 A CN106400102 A CN 106400102A
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- single crystal
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- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 238000000137 annealing Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 24
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000460 chlorine Substances 0.000 claims abstract description 18
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 18
- 229910052810 boron oxide Inorganic materials 0.000 claims abstract description 12
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000003708 ampul Substances 0.000 claims description 15
- 229910001220 stainless steel Inorganic materials 0.000 claims description 15
- 239000010935 stainless steel Substances 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 12
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 10
- 230000000740 bleeding effect Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 4
- 238000011068 loading method Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052571 earthenware Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
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- 238000012986 modification Methods 0.000 description 2
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- 229910000831 Steel Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201610950624.9A CN106400102B (zh) | 2016-10-26 | 2016-10-26 | 一种可实现单晶在线退火的生长设备及其方法 |
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CN201610950624.9A CN106400102B (zh) | 2016-10-26 | 2016-10-26 | 一种可实现单晶在线退火的生长设备及其方法 |
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CN106400102A true CN106400102A (zh) | 2017-02-15 |
CN106400102B CN106400102B (zh) | 2019-06-28 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109252220A (zh) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | 一种vgf/vb砷化镓单晶炉结构及生长方法 |
CN110725008A (zh) * | 2019-11-28 | 2020-01-24 | 珠海鼎泰芯源晶体有限公司 | 一种晶体生长后的退火及脱锅方法以及晶体制备方法 |
Citations (12)
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EP0599516A2 (en) * | 1992-11-20 | 1994-06-01 | AT&T Corp. | Process for removing surface contaminants from III-V semiconductors |
CN1485467A (zh) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置及其生长晶体的方法 |
CN1657659A (zh) * | 2004-12-15 | 2005-08-24 | 中国科学院上海光学精密机械研究所 | 砷化镓单晶的生长方法 |
CN1784514A (zh) * | 2003-05-07 | 2006-06-07 | 住友电气工业株式会社 | 磷化铟基板、磷化铟单晶及其制造方法 |
CN1936119A (zh) * | 2005-09-22 | 2007-03-28 | 中国科学院半导体研究所 | InP单晶锭退火处理方法 |
CN101235542A (zh) * | 2007-11-14 | 2008-08-06 | 哈尔滨工业大学 | 磷化锗锌的多晶合成与单晶生长的方法 |
CN101323969A (zh) * | 2008-07-24 | 2008-12-17 | 山东大学 | 多元化合物红外晶体生长方法 |
CN102766901A (zh) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 |
CN203834053U (zh) * | 2014-05-15 | 2014-09-17 | 西安西凯化合物材料有限公司 | 一种实现化合物半导体材料退火的设备 |
CN104372398A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 一种磷化铟生长的压力罐 |
CN204224744U (zh) * | 2014-11-18 | 2015-03-25 | 天津中环领先材料技术有限公司 | 一种用于硅晶圆片薄膜制备的退火炉 |
CN206204470U (zh) * | 2016-10-26 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | 一种可实现单晶在线退火的生长设备 |
-
2016
- 2016-10-26 CN CN201610950624.9A patent/CN106400102B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0599516A2 (en) * | 1992-11-20 | 1994-06-01 | AT&T Corp. | Process for removing surface contaminants from III-V semiconductors |
CN1784514A (zh) * | 2003-05-07 | 2006-06-07 | 住友电气工业株式会社 | 磷化铟基板、磷化铟单晶及其制造方法 |
CN1485467A (zh) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置及其生长晶体的方法 |
CN1657659A (zh) * | 2004-12-15 | 2005-08-24 | 中国科学院上海光学精密机械研究所 | 砷化镓单晶的生长方法 |
CN1936119A (zh) * | 2005-09-22 | 2007-03-28 | 中国科学院半导体研究所 | InP单晶锭退火处理方法 |
CN101235542A (zh) * | 2007-11-14 | 2008-08-06 | 哈尔滨工业大学 | 磷化锗锌的多晶合成与单晶生长的方法 |
CN101323969A (zh) * | 2008-07-24 | 2008-12-17 | 山东大学 | 多元化合物红外晶体生长方法 |
CN102766901A (zh) * | 2012-08-20 | 2012-11-07 | 元亮科技有限公司 | 实时可调温度梯度法生长大尺寸高温晶体的装置及方法 |
CN104372398A (zh) * | 2013-08-14 | 2015-02-25 | 台山市华兴光电科技有限公司 | 一种磷化铟生长的压力罐 |
CN203834053U (zh) * | 2014-05-15 | 2014-09-17 | 西安西凯化合物材料有限公司 | 一种实现化合物半导体材料退火的设备 |
CN204224744U (zh) * | 2014-11-18 | 2015-03-25 | 天津中环领先材料技术有限公司 | 一种用于硅晶圆片薄膜制备的退火炉 |
CN206204470U (zh) * | 2016-10-26 | 2017-05-31 | 珠海鼎泰芯源晶体有限公司 | 一种可实现单晶在线退火的生长设备 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109252220A (zh) * | 2018-12-04 | 2019-01-22 | 中国电子科技集团公司第四十六研究所 | 一种vgf/vb砷化镓单晶炉结构及生长方法 |
CN110725008A (zh) * | 2019-11-28 | 2020-01-24 | 珠海鼎泰芯源晶体有限公司 | 一种晶体生长后的退火及脱锅方法以及晶体制备方法 |
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Effective date of registration: 20170407 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Effective date of registration: 20170807 Address after: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant after: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. Address before: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant before: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. |
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Effective date of registration: 20170823 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: BEIJING DINGTAI XINYUAN TECHNOLOGY DEVELOPMENT Co.,Ltd. |
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Denomination of invention: A growth equipment and method that can achieve online annealing of single crystals Granted publication date: 20190628 Pledgee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Pledgor: ZHUHAI DINGTAI XINYUAN CRYSTAL CO.,LTD. Registration number: Y2024980025500 |