CN204224744U - 一种用于硅晶圆片薄膜制备的退火炉 - Google Patents
一种用于硅晶圆片薄膜制备的退火炉 Download PDFInfo
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- CN204224744U CN204224744U CN201420694008.8U CN201420694008U CN204224744U CN 204224744 U CN204224744 U CN 204224744U CN 201420694008 U CN201420694008 U CN 201420694008U CN 204224744 U CN204224744 U CN 204224744U
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- gas circuit
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- mass flow
- flow controller
- quartz
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 238000000137 annealing Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000010453 quartz Substances 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 36
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 35
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052786 argon Inorganic materials 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 12
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 7
- 229960005419 nitrogen Drugs 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 12
- 238000013022 venting Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 14
- 238000007254 oxidation reaction Methods 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 abstract description 3
- 238000003786 synthesis reaction Methods 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 31
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229960001866 silicon dioxide Drugs 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- -1 chloro-silicon-oxygen Chemical compound 0.000 description 2
- 238000004320 controlled atmosphere Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Abstract
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CN201420694008.8U CN204224744U (zh) | 2014-11-18 | 2014-11-18 | 一种用于硅晶圆片薄膜制备的退火炉 |
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CN201420694008.8U CN204224744U (zh) | 2014-11-18 | 2014-11-18 | 一种用于硅晶圆片薄膜制备的退火炉 |
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CN204224744U true CN204224744U (zh) | 2015-03-25 |
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CN201420694008.8U Active CN204224744U (zh) | 2014-11-18 | 2014-11-18 | 一种用于硅晶圆片薄膜制备的退火炉 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105463582A (zh) * | 2015-07-05 | 2016-04-06 | 汇隆电子(金华)有限公司 | 一种用于低应力低氧化处理的高温高真空退火装置 |
CN106012026A (zh) * | 2016-08-04 | 2016-10-12 | 汪锐 | 一种用于led晶片制作的退火装置 |
CN106400102A (zh) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | 一种可实现单晶在线退火的生长设备及其方法 |
CN106935531A (zh) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | 一种热处理设备及其处理晶圆的方法 |
CN107132617A (zh) * | 2017-04-01 | 2017-09-05 | 中国科学院微电子研究所 | 一种降低硅基光波导侧壁粗糙度的方法 |
CN107256907A (zh) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | 改善perc高效电池片外观小白点的退火工艺 |
CN107485443A (zh) * | 2017-09-21 | 2017-12-19 | 北京阳光易帮医疗科技有限公司 | 一种冷冻微波复合消融系统 |
CN108550656A (zh) * | 2018-05-17 | 2018-09-18 | 苏州晶洲装备科技有限公司 | 一种电注入均衡退火装置 |
-
2014
- 2014-11-18 CN CN201420694008.8U patent/CN204224744U/zh active Active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105463582A (zh) * | 2015-07-05 | 2016-04-06 | 汇隆电子(金华)有限公司 | 一种用于低应力低氧化处理的高温高真空退火装置 |
CN105463582B (zh) * | 2015-07-05 | 2019-06-11 | 汇隆电子(金华)有限公司 | 一种用于低应力低氧化处理的高温高真空退火装置 |
CN106935531A (zh) * | 2015-12-31 | 2017-07-07 | 无锡华润华晶微电子有限公司 | 一种热处理设备及其处理晶圆的方法 |
CN106012026A (zh) * | 2016-08-04 | 2016-10-12 | 汪锐 | 一种用于led晶片制作的退火装置 |
CN106400102A (zh) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | 一种可实现单晶在线退火的生长设备及其方法 |
CN106400102B (zh) * | 2016-10-26 | 2019-06-28 | 珠海鼎泰芯源晶体有限公司 | 一种可实现单晶在线退火的生长设备及其方法 |
CN107132617A (zh) * | 2017-04-01 | 2017-09-05 | 中国科学院微电子研究所 | 一种降低硅基光波导侧壁粗糙度的方法 |
CN107256907A (zh) * | 2017-06-20 | 2017-10-17 | 常州亿晶光电科技有限公司 | 改善perc高效电池片外观小白点的退火工艺 |
CN107485443A (zh) * | 2017-09-21 | 2017-12-19 | 北京阳光易帮医疗科技有限公司 | 一种冷冻微波复合消融系统 |
CN108550656A (zh) * | 2018-05-17 | 2018-09-18 | 苏州晶洲装备科技有限公司 | 一种电注入均衡退火装置 |
CN108550656B (zh) * | 2018-05-17 | 2023-11-21 | 苏州晶洲装备科技有限公司 | 一种电注入均衡退火装置 |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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