CN106288245B - 一种水机防冻控制方法、系统及空调设备 - Google Patents

一种水机防冻控制方法、系统及空调设备 Download PDF

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CN106288245B
CN106288245B CN201610949310.7A CN201610949310A CN106288245B CN 106288245 B CN106288245 B CN 106288245B CN 201610949310 A CN201610949310 A CN 201610949310A CN 106288245 B CN106288245 B CN 106288245B
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heat exchanger
water
temperature
mode
freezing
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CN106288245A (zh
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黎志瑜
黄振韶
李球
刘华栋
高德福
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开了一种水机防冻控制方法,包括:获取运行模式和运行模式下当前的换热器的使用状态;当运行模式为制冷模式或制冷‑制热水模式,且当获取到空调换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;当换热器在运行模式下状态为不使用时,控制换热器的水泵进入运行状态并持续预定时间后,若换热器的进水温度低于最低值,则控制停机并控制进入换热器对应的运行模式,以提升换热器的进水温度。本发明所提供的水机防冻控制方法针对不同的运行模式进行了不同的防冻保护,保证了系统在各个模式下运行时的稳定运行,提升了质量稳定性和可靠性。本发明还公开了一种水机防冻控制系统和包括该系统的空调设备。

Description

一种水机防冻控制方法、系统及空调设备
技术领域
本发明涉及空调控制技术领域,更具体地说,涉及一种水机防冻控制方法和系统。此外,本发明还涉及一种包括上述水机防冻控制系统的空调设备。
背景技术
空调产品按其使用侧的不同,可分为冷风机和冷水机,其中冷水机由于其使用侧为水,在水温低于0℃时会结冰,冰的密度比水的密度小,在水变成冰后体积会增大,从而将空调的水侧换热器及其连接水管等冻裂,因此,冷水机必须考虑防冻问题。
对于一些特殊的机器,如全热回型的冷水机,由于其有两个水侧换热器,在待机时需要分别考虑两个水侧换热器的防冻保护,比常规机器要考虑多一个换热器的防冻保护。运行模式比常规机器要多,有些模式下存在其中一个换热器不使用的情况,不使用的换热器也需要考虑防冻保护,采用简单方法就无法确保机器不被冻裂。
综上所述,如何提供一种防冻保护稳定且全面的控制方法,是目前本领域技术人员亟待解决的问题。
发明内容
有鉴于此,本发明的目的是提供一种水机防冻控制方法,该方法的防冻保护稳定且全面。本发明的另一目的是提供一种水机防冻控制系统和具有该水机防冻控制系统的空调设备,该装置的防冻保护稳定且全面。
为了实现上述目的,本发明提供如下技术方案:
一种水机防冻控制方法,包括:
获取运行模式和所述运行模式下当前的换热器的使用状态;
当所述运行模式为制冷模式或制冷-制热水模式,且当获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;
当所述换热器在所述运行模式下状态为不使用时,控制所述换热器的水泵进入运行状态并持续预定时间后,若所述换热器的进水温度低于最低值,则控制停机并控制进入所述换热器对应的所述运行模式,以提升所述换热器的进水温度。
优选的,所述当获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护的步骤,包括:
S21:当所述空调侧换热器的出水温度低于所述预设最低值时,控制进入停机制冷防冻保护状态,并控制保护累计次数加一次;
S22:预设时间段后,若所述出水温度高于控制温度,则判断所述保护累计次数是否小于预设临界次数;如果是,则控制退出所述停机制冷防冻保护状态,并返回S21;如果否,则报警并停机处理。
优选的,所述运行模式为制冷模式或制热模式时,控制热水侧换热器的热水水泵启动并运行第一时间段后,每间隔第二时间段控制所述热水水泵运行第三时间段;
当获取到进水温度低于所述最低值时,控制所述热水水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热水模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制冷模式或制热模式。
优选的,所述运行模式为制热水模式时,控制空调侧换热器的空调水泵启动并运行第四时间段后,每间隔第五时间段控制所述空调水泵运行第六时间段;
当获取到进水温度低于所述最低值时,控制空调水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制热水模式。
优选的,所述运行模式为待机模式时,若空调侧换热器的进水温度低于所述最低值时,进入防冻状态,控制空调水泵运转;
判断所述进水温度升高速度是否达到预设要求,若为是,则当所述进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入所述空调侧换热器的空调水泵运行,当所述进水温度高于安全温度时,退出所述防冻状态。
优选的,所述运行模式为待机模式时,若热水侧换热器的进水温度低于所述最低值时,进入防冻状态,控制热水水泵运转;
判断所述进水温度升高速度是否达到预设要求,若为是,则当所述进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入所述热水侧换热器的热水水泵运行,当所述进水温度高于安全温度时,退出所述防冻状态。
优选的,所述运行模式为待机模式时,若获取到环境温度低于所述最低值并持续待机临界时间时,控制所述空调侧换热器的空调水泵运转预设待机防冻时间,或所述控制热水侧换热器的热水水泵运转预设待机防冻时间;
所述退出防冻状态包括所述待机临界时间清零。
优选的,所述运行模式为待机模式时,所述空调侧换热器优先于所述热水侧换热器进行防冻操作。
一种水机防冻控制系统,包括:
获取装置,用于获取系统的运行模式和所述运行模式下当前的换热器的使用状态;
控制装置,所述控制装置与所述获取装置连接,用于当所述运行模式为制冷模式或制冷-制热水模式,且获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;当所述换热器在所述运行模式下状态为不使用时,控制所述换热器的水泵进入运行状态并持续预定时间后,若所述换热器的进水温度低于最低值,则控制停机并控制进入所述换热器对应的所述运行模式,以提升所述换热器的进水温度。
一种空调设备,包括上述所述的水机防冻控制系统。
本发明提供的制冷模式和制冷-制热水模式工况下的空调侧换热器是处于使用状态中的,可以理解为运行防冻;两种换热器在不使用时的统一控制方法是在非运行状态下的防冻方法。
本发明所提供的水机防冻控制方法针对不同的运行模式进行了不同的防冻保护,保证了系统在各个模式下运行时的防冻准确和全面覆盖,保证了系统的稳定运行,安全可靠,提升了质量稳定性和可靠性。
本发明还提供了一种水机防冻控制系统和包括该水机防冻控制系统的空调设备。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。
图1为本发明所提供的水机防冻控制方法的具体实施例一的流程图;
图2为本发明所提供的水机防冻控制方法的具体实施例二的流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明的核心是提供一种水机防冻控制方法,该方法的防冻保护稳定且全面。本发明的另一核心是提供一种水机防冻控制系统和具有该水机防冻控制系统的空调设备,该装置的防冻保护稳定且全面。
请参考图1和图2,图1为本发明所提供的水机防冻控制方法的具体实施例一的流程图;图2为本发明所提供的水机防冻控制方法的具体实施例二的流程图。
本发明所提供的一种水机防冻控制方法,包括:
步骤S1:获取运行模式和运行模式下当前的换热器的使用状态。
需要说明的是,步骤S1中,运行模式为系统运行模式,包括:制热模式、制冷模式、制热水模式、制冷-制热水模式等。换热器包括:空调侧换热器和热水侧换热器,相对应的,运行模式下当前的换热器的使用状态是与换热器的使用特点相关的。其中,在制冷模式下,空调侧换热器为使用状态,热水侧换热器为不使用状态;在制热模式下,空调侧换热器为使用状态,热水侧换热器为不使用状态;在制热水模式下,空调侧换热器为不使用状态,热水侧换热器为使用状态;在制冷-制热水模式下,空调侧换热器为使用状态,热水侧换热器也为使用状态。在待机模式下,二者均处于不使用状态。
步骤S2:当运行模式为制冷模式或制冷-制热水模式,且当获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;当换热器在运行模式下状态为不使用时,控制换热器的水泵进入运行状态并持续预定时间后,若换热器的进水温度低于最低值,则控制停机并控制进入换热器对应的运行模式,以提升换热器的进水温度。
需要说明的是,步骤S2中,提供了针对制冷模式和制冷-制热水模式工况下的空调侧换热器的防冻控制方法,以及两种换热器在不使用时的统一控制方法。这两种方法均是针对特定运行模式设置的。
制冷模式和制冷-制热水模式工况下的空调侧换热器是处于使用状态中的,可以理解为运行防冻;两种换热器在不使用时的统一控制方法是在非运行状态下的防冻方法。
本发明所提供的水机防冻控制方法针对不同的运行模式进行了不同的防冻保护,保证了系统在各个模式下运行时的防冻准确和全面覆盖,保证了系统的稳定运行,安全可靠,提升了质量稳定性和可靠性。
在上述实施例的基础之上,关于当获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护的步骤,可以具体包括:
步骤S21:当空调侧换热器的出水温度低于预设最低值时,控制进入停机制冷防冻保护状态,并控制保护累计次数加一次。
步骤S22:预设时间段后,当出水温度高于控制温度时,则判断保护累计次数是否小于预设临界次数,如果是,则控制退出停机制冷防冻保护状态,并返回步骤S21;如果否,则报警并停机处理。
需要说明的是,上述预设最低值为出水温度的最低要求值,如果出水温度低于该值,则说明处于冷冻临界状态,需要进行防冻操作。其中,保护累计次数为可进行累积的计数。
具体地,以制冷模式下的空调侧换热器为例,空调侧换热器的防冻控制方法包括:当模块的出水温度小于4℃并持续5秒,报警对应的模块出水过冷;制冷进出水温度过低保护的累计次数加1次。4分钟后,出水温度会有一定的提升,当出水温度高于制冷进水设置温度时,对上述保护累计次数进行判断,如果制冷进出水温度过低的保护累计次数在1小时内的累计次数小于3次,则退出制冷防冻保护,也就是说,在一小时内的过冷状态未超过3次,则说明系统的过冷状态仍处于可自控、自调节的范围内,推出制冷防冻保护后,需要返回步骤S21,再次进行出水温度的测试。如果制冷进出水温度过低的保护累计次数在1小时内的累计次数大于等于3次,则进入制冷防冻保护状态,报警并停机,必须关机或断电复位。也就是说,在一小时内的过冷状态未超过3次,则说明系统的过冷状态已超出可自调节的范围,所以需要强行关机报警。
制冷-制热水模式的控制方式类似,制冷-制热水模式下空调侧换热器为使用状态,当模块出水温度小于4℃并持续5秒或以上,报警对应的模块出水过冷;制冷进出水温度过低的保护累计次数加1次。4分钟后,当出水温度高于制冷进水设置温度时,如果制冷进出水温度过低保护在1小时内的保护累计次数小于3次,则退出制冷防冻保护,并返回继续测量模块的出水温度;如果制冷进出水温度过低在1小时内的保护累计次数大于等于3次,则进入制冷防冻保护状态,报警并停机,必须关机或断电复位。
需要说明的是,上述出水温度的预设最低值(4℃)、判断的持续时间(5秒)、预设时间段(4分钟)和保护累计次数的预设临界次数(3次)均为针对水机具体情况进行设定的值,在具体实施阶段可以根据不同情况进行调整和改变。
在上述任意实施例中,针对不使用的换热器的防冻方法均为:控制换热器的水泵进入运行状态并持续预定时间后,若换热器的进水温度低于最低值,则控制停机并控制进入换热器对应的运行模式,以提升换热器的进水温度。
然而,针对不同的换热器和不同的运行模式仍存在控制方式的差别,下面通过两个具体实施例进行说明。
在上述任意一个实施例的基础之上,运行模式为制冷模式或制热模式时,控制热水侧换热器的热水水泵启动并运行第一时间段后,每间隔第二时间段控制热水水泵运行第三时间段。当获取到进水温度低于最低值时,控制热水水泵持续运转预设监测时间后,判断进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热水模式,当获取到进水温度高于安全温度时,切换回初始设置的制冷模式或制热模式。
需要说明的是,上述第一时间段、第二时间段和第三时间段均可以根据具体的使用温度和工况特点进行调整。由于制热水模式下,热水侧换热器为使用状态,对热水侧的水处于加热状态,所以切换至制热水模式可以使得热水侧的水温升高。
具体地,制冷模式下热水侧换热器防冻控制方法包括:由于制冷模式下热水侧换热器为不使用状态,所以首先控制机器启动时热水水泵运行5分钟,然后每隔20分钟运行热水水泵3分钟,用于提升热水侧的水温,避免热水侧换热器发生冷冻。获取到热水侧防冻温度小于或等于4℃,并持续30秒或以上,则控制进入防冻状态,控制热水水泵继续运转,运转过程中会使得系统内的水流转动,促使热水水泵将水温升高。8分钟后判断进水水温升高速度是否达到预设要求,若防冻温度的温升小于1℃,则说明水箱升温速度不够,不能够有效防止机体冷冻,应当控制全部机器停止运行,并切换到制热水模式运行,制热水模式下可以对水箱进行加热。运行过程中,进水口温度也就是防冻温度上升至15℃或大于15℃时,控制压机停止运行,热水水泵延时停,退出防冻操作,并转回制冷模式继续运行。
需要说明的是,本实施例所提供的方法中对制冷或制热状态下的热水侧换热器进行获取,当出现热水泵运行也不能够提升进水口温度时,需要将系统的运行模式调整至制热水模式,在该模式下能够对热水测水箱进行加热,从而实现进水口的水流温度的上升。
可选的,每台机器的压缩机启动间隔为3秒或其他适用于系统运行的时间。
制热模式下热水侧换热器的防冻控制方法包括:由于制热模式下热水侧换热器为不使用状态,所以首先控制机器启动时热水水泵运行5分钟,以后每隔20分钟运行热水水泵3分钟,获取到热水侧防冻温度小于或等于4℃,并持续30秒及以上时,系统进入防冻,热水水泵继续运转,8分钟后若防冻温度的温升小于1℃,全部机器停止运行,切换到制热水模式运行。运行过程中,进水口温度也就是防冻温度上升至15℃或大于15℃时,控制压机停止运行,热水水泵延时停,退出防冻,机器转回制热模式运行。
可选的,上述实施例中进水温度的最低值(4℃)、预设监测时间(8分钟)、进水温度升温速度的预设要求(1℃)和安全温度(15℃)均为根据使用情况设定的可调整值。
在上述任意一个实施例的基础之上,运行模式为制热水模式时,控制空调侧换热器的空调水泵启动并运行第四时间段后,每间隔第五时间段控制空调水泵运行第六时间段;当获取到进水温度低于最低值时,控制空调水泵持续运转预设监测时间后,判断进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热模式,当获取到进水温度高于安全温度时,切换回初始设置的制热水模式。
需要说明的是,上述第四时间段、第五时间段和第六时间段均可以根据具体的使用温度和工况特点进行调整。由于制热模式下,空调侧换热器为使用状态,对空调侧的水处于加热状态,所以切换至制热模式可以使得空调侧的水温升高。
具体地,空调侧换热器防冻保护逻辑:开机启动时控制空调水泵运行5分钟,然后每隔20分钟运行空调水泵3分钟,获取到空调侧防冻温度小于或等于4℃,并持续30秒及以上,需要控制系统进入防冻状态,控制空调水泵运转。8分钟后若防冻温度的温升小于1℃,说明空调水泵运转方式不足以控制空调侧换热器防冻,需要控制全部机器停止运行,并切换到制热模式运行。当获取到防冻温度上升至15℃或大于15℃时,控制压机停止运行,并使空调水泵延时停,退出防冻操作,系统转回制热水模式运行。可选的,每台机器的压缩机启动间隔为3秒。
可选的,上述实施例中进水温度的最低值(4℃)、预设监测时间(8分钟)、进水温度升温速度的预设要求(1℃)和安全温度(15℃)均为根据使用情况设定的可调整值,可以与上述实施例中的相对应取值相同,也可以不同。
在系统运行模式中还有待机模式,待机模式下两个换热器均为不使用状态,而待机模式下的防冻方式与上述情况有一定的差别。
在上述任意一个实施例的基础之上,运行模式为待机模式时,防冻控制方法包括:
步骤S31:若空调侧换热器的进水温度低于最低值时,进入防冻状态,控制空调水泵运转。
步骤S32:判断进水温度升高速度是否达到预设要求,若为是,则当进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入空调侧换热器的空调水泵运行,当进水温度高于安全温度时,退出防冻状态。
需要说明的是,当防冻温度小于等于4℃,系统进入防冻状态,控制空调水泵运转一段时间。判断进水温度升高速度是否达到预设要求,具体可以为判断每8分钟防冻温度的温升是否大于1℃,如果是,则当进水温度高于安全温度(15℃)时,退出防冻状态;如果否,则加载1台机组投入空调水泵的运行,机组中的两台压缩机启动间隔为3秒,运行过程中,当防冻温度大于15℃时,也就是进水温度高于15℃时,压机停止运行,空调水泵延时停,退出防冻状态。
可选的,在步骤S31之前包括:若获取到环境温度低于最低值并持续待机临界时间时,控制空调侧换热器的空调水泵运转预设待机防冻时间。相对应的,步骤S32中,退出防冻状态包括待机临界时间清零。
具体地,待机时空调侧换热器为不使用状态,当获取到环境温度小于或等于4℃,并持续30分钟或以上时,直接控制空调水泵运转2分钟。退出防冻状态包括待机临界时间清零具体为:环境温度小于等于4℃的待机临界时间的累积重新清零,重新累计计算。
在上述任意一个实施例的基础之上,运行模式为待机模式时,防冻控制方法包括:
步骤S41:若热水侧换热器的进水温度低于最低值时,进入防冻状态,控制热水水泵运转。
步骤S42:判断进水温度升高速度是否达到预设要求,若为是,则当进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入热水侧换热器的热水水泵运行,当进水温度高于安全温度时,退出防冻状态。
具体过程包括,当防冻温度≤4℃,系统进入防冻,热水水泵运转一段时间,判断进水温度升高速度是否达到预设要求,若为是,则当进水温度高于安全温度时,退出防冻状态;若为否,例如每8分钟若防冻温度的温升小于1℃,则加载1台机组投入制热水运行,当防冻温度>15℃时,压机停止运行,热水水泵延时停,退出防冻。
可选的,在步骤S41之前包括:若获取到环境温度低于最低值并持续待机临界时间时,控制空调侧换热器的空调水泵运转预设待机防冻时间。相对应的,步骤S42中,退出防冻状态包括待机临界时间清零。
具体地,待机时下热水侧换热器不使用,当获取到环境温度小于或等于4℃,并持续30分钟或以上时,控制热水水泵运转2分钟,相对应的,退出防冻状态包括待机临界时间清零具体为:环境温度小于等于4℃的待机临界时间的累积重新清零,重新累计计算。
可选的,机组中的两台压缩机启动间隔为3秒。
在上述任意一个实施例的基础之上,运行模式为待机模式时,空调侧换热器优先于热水侧换热器进行防冻操作。
需要说明的是,空调侧换热器与热水侧换热器同时进行防冻时,热水水泵和空调水泵都开启。考虑到空调侧水系统容量较小,若需要加载压缩机,系统先进行空调侧防冻运行,空调侧退出后压机进行热水侧防冻的开启。
除了上述实施例所提供的一种水机防冻控制方法,本发明还提供一种包括用于实施上述方法的水机防冻控制系统,该系统包括:获取装置和控制装置。
获取装置用于获取系统的运行模式和运行模式下当前的换热器的使用状态。
控制装置,控制装置与获取装置连接,用于当运行模式为制冷模式或制冷-制热水模式,且获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;当换热器在运行模式下状态为不使用时,控制换热器的水泵进入运行状态并持续预定时间后,若换热器的进水温度低于最低值,则控制停机并控制进入换热器对应的运行模式,以提升换热器的进水温度。
需要说明的是,上述获取装置可以是水机控制器的一部分或者为水机内设置的一个独立模块,控制装置与获取装置的连接指的是二者之间的通信连接或信号连接,控制装置用于根据获取装置获取的系统运行状态和换热器的使用状态对不同换热器进行不同的防冻保护。
本实施例所提供的水机防冻控制系统的使用方式可以参考上述水机防冻控制方法,此处不再赘述。
除了上述实施例所提供的水机防冻控制系统,该水机防冻控制系统的其他各部分的结构请参考现有技术,本文不再赘述。
除了上述水机防冻控制系统,本发明还提供了一种水机防冻控制系统和包括该水机防冻控制系统的空调设备。
本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其他实施例的不同之处,各个实施例之间相同相似部分互相参见即可。
以上对本发明所提供的水机防冻控制方法、水机防冻控制系统和具有该系统的空调设备进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。

Claims (10)

1.一种水机防冻控制方法,其特征在于,包括:
获取运行模式和所述运行模式下当前的换热器的使用状态;所述换热器包括:空调侧换热器和热水侧换热器;
当所述运行模式为制冷模式或制冷-制热水模式,且当获取到空调侧换热器的出水温度低于预设最低值时,控制所述空调侧换热器进行有限次的自动停机复位保护;
当所述运行模式为制热模式时,控制热水侧换热器的热水水泵启动并运行第一时间段后,每间隔第二时间段控制所述热水水泵运行第三时间段;当获取到进水温度低于所述最低值时,控制所述热水水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热水模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制热模式。
2.根据权利要求1所述的水机防冻控制方法,其特征在于,所述当获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护的步骤,包括:
S11:当所述空调侧换热器的出水温度低于所述预设最低值时,控制进入停机制冷防冻保护状态,并控制保护累计次数加一次;
S12:预设时间段后,若所述出水温度高于控制温度,则判断所述保护累计次数是否小于预设临界次数;如果是,则控制退出所述停机制冷防冻保护状态,并返回S11;如果否,则报警并停机处理。
3.根据权利要求1所述的水机防冻控制方法,其特征在于,所述运行模式为制冷模式时,控制热水侧换热器的热水水泵启动并运行第一时间段后,每间隔第二时间段控制所述热水水泵运行第三时间段;
当获取到进水温度低于所述最低值时,控制所述热水水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热水模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制冷模式。
4.根据权利要求1所述的水机防冻控制方法,其特征在于,所述运行模式为制热水模式时,控制空调侧换热器的空调水泵启动并运行第四时间段后,每间隔第五时间段控制所述空调水泵运行第六时间段;
当获取到进水温度低于所述最低值时,控制空调水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制热水模式。
5.根据权利要求1至4任意一项所述的水机防冻控制方法,其特征在于,所述运行模式为待机模式时,若空调侧换热器的进水温度低于所述最低值时,进入防冻状态,控制空调水泵运转;
判断所述进水温度升高速度是否达到预设要求,若为是,则当所述进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入所述空调侧换热器的空调水泵运行,当所述进水温度高于安全温度时,退出所述防冻状态。
6.根据权利要求5所述的水机防冻控制方法,其特征在于,所述运行模式为待机模式时,若热水侧换热器的进水温度低于所述最低值时,进入防冻状态,控制热水水泵运转;
判断所述进水温度升高速度是否达到预设要求,若为是,则当所述进水温度高于安全温度时,退出防冻状态;若为否,则控制加载机组进入所述热水侧换热器的热水水泵运行,当所述进水温度高于安全温度时,退出所述防冻状态。
7.根据权利要求6所述的水机防冻控制方法,其特征在于,所述运行模式为待机模式时,若获取到环境温度低于所述最低值并持续待机临界时间时,控制所述空调侧换热器的空调水泵运转预设待机防冻时间,或所述控制热水侧换热器的热水水泵运转预设待机防冻时间;
所述退出防冻状态包括所述待机临界时间清零。
8.根据权利要求7所述的水机防冻控制方法,其特征在于,所述运行模式为待机模式时,所述空调侧换热器优先于所述热水侧换热器进行防冻操作。
9.一种水机防冻控制系统,其特征在于,包括:
获取装置,用于获取系统的运行模式和所述运行模式下当前的换热器的使用状态;所述换热器包括:空调侧换热器和热水侧换热器;
控制装置,所述控制装置与所述获取装置连接,用于当所述运行模式为制冷模式或制冷-制热水模式,且获取到空调侧换热器的出水温度低于预设最低值时,控制空调侧换热器进行有限次的自动停机复位保护;并用于当所述运行模式为制热模式时,控制热水侧换热器的热水水泵启动并运行第一时间段后,每间隔第二时间段控制所述热水水泵运行第三时间段;当获取到进水温度低于所述最低值时,控制所述热水水泵持续运转预设监测时间后,判断所述进水温度升温速度是否达到预设要求,如果否,控制停机并切换至制热水模式,当获取到所述进水温度高于安全温度时,切换回初始设置的所述制热模式。
10.一种空调设备,其特征在于,包括权利要求9所述的水机防冻控制系统。
CN201610949310.7A 2015-11-05 2016-11-02 一种水机防冻控制方法、系统及空调设备 Active CN106288245B (zh)

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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899387B2 (en) * 2015-11-16 2018-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate device and method of fabrication thereof
US9941118B2 (en) * 2016-08-22 2018-04-10 International Business Machines Corporation Dense vertical nanosheet
FR3060838B1 (fr) * 2016-12-15 2019-05-31 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de realisation d'un dispositif semi-conducteur a canal contraint en compression
EP3340308B1 (en) * 2016-12-22 2022-09-07 IMEC vzw Method for forming transistors on a substrate
CN107726682A (zh) * 2017-10-12 2018-02-23 青岛海尔空调电子有限公司 热泵机组防冷冻控制方法
US10720494B2 (en) * 2018-01-22 2020-07-21 Globalfoundries Inc. Field-effect transistors with airgaps
CN108317687A (zh) * 2018-02-05 2018-07-24 珠海格力电器股份有限公司 防冻节能控制方法、装置和空调机组
DE102019115523B4 (de) * 2018-07-31 2022-05-25 Taiwan Semiconductor Manufacturing Co. Ltd. Verfahren zur herstellung einer halbleitervorrichtung
CN110873479A (zh) * 2018-08-29 2020-03-10 江苏美力格环境科技有限公司 一种改进型家用多功能空气源热泵系统
DE102019115490B4 (de) 2018-11-30 2022-10-20 Taiwan Semiconductor Manufacturing Co. Ltd. Halbleiter-bauelement und verfahren zu dessen herstellung
US11387362B2 (en) * 2018-11-30 2022-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN110131933B (zh) * 2019-04-15 2021-04-20 广东芬尼能源技术有限公司 一种适用于热泵机组的待机防冻控制方法及装置
CN109990519B (zh) * 2019-04-17 2020-12-22 南京天加环境科技有限公司 一种空气源热泵防冻控制方法
US11888034B2 (en) 2019-06-07 2024-01-30 Intel Corporation Transistors with metal chalcogenide channel materials
US11171243B2 (en) 2019-06-27 2021-11-09 Intel Corporation Transistor structures with a metal oxide contact buffer
US11777029B2 (en) 2019-06-27 2023-10-03 Intel Corporation Vertical transistors for ultra-dense logic and memory applications
CN110425747B (zh) * 2019-08-01 2021-04-09 广东志高暖通设备股份有限公司 一种适用于变频热泵热水器的变频水泵控制方法
CN110553345A (zh) * 2019-09-12 2019-12-10 珠海格力电器股份有限公司 机组自动防冻的方法及空调系统
DE102020119199A1 (de) * 2019-10-23 2021-04-29 Taiwan Semiconductor Manufacturing Co. Ltd. 3d-ferroelektrikum-speicher
CN111207485B (zh) * 2020-01-09 2021-07-13 珠海格力电器股份有限公司 一种防冻结控制方法、装置、存储介质及水多联系统
US11653492B2 (en) 2020-02-10 2023-05-16 Taiwan Semiconductor Manufacturing Limited Memory devices and methods of manufacturing thereof
KR102576497B1 (ko) * 2020-05-29 2023-09-07 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 가변 수의 채널 층을 가진 반도체 디바이스 및 그 제조 방법
US11923459B2 (en) * 2020-06-23 2024-03-05 Taiwan Semiconductor Manufacturing Company Limited Transistor including hydrogen diffusion barrier film and methods of forming same
CN112902400A (zh) * 2020-12-30 2021-06-04 珠海拓芯科技有限公司 空调水系统防冻控制方法、装置及空调器
CN112728978A (zh) * 2020-12-31 2021-04-30 浙江中广电器股份有限公司 一种具有板式换热器的空调系统及其防冻控制方法
US20230031490A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Strained nanosheets on silicon-on-insulator substrate
CN115247891A (zh) * 2022-06-28 2022-10-28 浙江中广电器集团股份有限公司 一种热泵热水机防冻的控制方法
CN115183405A (zh) * 2022-07-08 2022-10-14 青岛海尔空调电子有限公司 用于空气源热泵机组防冻的方法及装置、空气源热泵机组、存储介质
CN115289611A (zh) * 2022-07-08 2022-11-04 青岛海尔空调电子有限公司 用于空气源热泵机组防冻的方法及装置、空气源热泵机组、存储介质

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2831838B2 (ja) * 1990-11-06 1998-12-02 株式会社東芝 空気調和機
CN2400764Y (zh) * 1999-12-30 2000-10-11 张晓军 空调防冻装置
JP4186492B2 (ja) * 2002-03-29 2008-11-26 ダイキン工業株式会社 空気調和装置
JP4796329B2 (ja) * 2004-05-25 2011-10-19 三星電子株式会社 マルチ−ブリッジチャンネル型mosトランジスタの製造方法
CN1979063B (zh) * 2005-12-02 2010-05-12 深圳麦克维尔空调有限公司 一种空调防冻方法
JP2007258485A (ja) 2006-03-23 2007-10-04 Toshiba Corp 半導体装置及びその製造方法
EP1895545B1 (en) * 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5646300B2 (ja) * 2010-11-29 2014-12-24 三洋電機株式会社 冷凍装置
US8796788B2 (en) * 2011-01-19 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with strained source/drain structures
US9012284B2 (en) * 2011-12-23 2015-04-21 Intel Corporation Nanowire transistor devices and forming techniques
US8987794B2 (en) * 2011-12-23 2015-03-24 Intel Coporation Non-planar gate all-around device and method of fabrication thereof
CN202947359U (zh) * 2012-11-16 2013-05-22 泰豪科技股份有限公司 全热回收水冷螺杆式冷水机组
US20140151638A1 (en) 2012-12-03 2014-06-05 International Business Machines Corporation Hybrid nanomesh structures
KR20140106270A (ko) * 2013-02-26 2014-09-03 삼성전자주식회사 집적 회로 장치 및 그 제조 방법
US8969149B2 (en) * 2013-05-14 2015-03-03 International Business Machines Corporation Stacked semiconductor nanowires with tunnel spacers
KR102089682B1 (ko) 2013-07-15 2020-03-16 삼성전자 주식회사 반도체 장치 및 이의 제조 방법
CN104422076B (zh) * 2013-08-21 2017-06-20 珠海格力电器股份有限公司 空调器制冷机组及其防冻控制方法
KR102083494B1 (ko) * 2013-10-02 2020-03-02 삼성전자 주식회사 나노와이어 트랜지스터를 포함하는 반도체 소자
US9224833B2 (en) * 2014-02-13 2015-12-29 Taiwan Semiconductor Manufacturing Company Limited Method of forming a vertical device
US9543440B2 (en) * 2014-06-20 2017-01-10 International Business Machines Corporation High density vertical nanowire stack for field effect transistor
CN104534622B (zh) * 2014-12-19 2017-06-06 珠海格力电器股份有限公司 空调防冻控制方法和装置
CN104676993B (zh) * 2015-02-13 2017-11-14 广东芬尼克兹节能设备有限公司 一种待机防冻控制方法
CN104776658A (zh) * 2015-04-09 2015-07-15 珠海格力电器股份有限公司 冷热水机组防冻控制方法、防冻控制装置及冷热水机组
US9437502B1 (en) * 2015-06-12 2016-09-06 International Business Machines Corporation Method to form stacked germanium nanowires and stacked III-V nanowires
US9613871B2 (en) * 2015-07-16 2017-04-04 Samsung Electronics Co., Ltd. Semiconductor device and fabricating method thereof
US9773708B1 (en) * 2016-08-24 2017-09-26 Globalfoundries Inc. Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPI
US9960254B1 (en) * 2017-02-06 2018-05-01 International Business Machines Corporation Replacement metal gate scheme with self-alignment gate for vertical field effect transistors
US10373912B2 (en) * 2018-01-05 2019-08-06 International Business Machines Corporation Replacement metal gate processes for vertical transport field-effect transistor
US10629499B2 (en) * 2018-06-13 2020-04-21 International Business Machines Corporation Method and structure for forming a vertical field-effect transistor using a replacement metal gate process

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US11626404B2 (en) 2023-04-11
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