CN106251901A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
- Publication number
- CN106251901A CN106251901A CN201610141276.0A CN201610141276A CN106251901A CN 106251901 A CN106251901 A CN 106251901A CN 201610141276 A CN201610141276 A CN 201610141276A CN 106251901 A CN106251901 A CN 106251901A
- Authority
- CN
- China
- Prior art keywords
- data
- write
- data latches
- latches
- memorizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/106—Data output latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
- G11C7/1012—Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-119512 | 2015-06-12 | ||
JP2015119512A JP6359491B2 (ja) | 2015-06-12 | 2015-06-12 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106251901A true CN106251901A (zh) | 2016-12-21 |
CN106251901B CN106251901B (zh) | 2020-01-10 |
Family
ID=57517352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610141276.0A Active CN106251901B (zh) | 2015-06-12 | 2016-03-11 | 半导体存储装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20160365154A1 (zh) |
JP (1) | JP6359491B2 (zh) |
CN (1) | CN106251901B (zh) |
TW (1) | TWI618080B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109426618A (zh) * | 2017-08-31 | 2019-03-05 | 东芝存储器株式会社 | 存储装置及数据处理装置 |
CN112309478A (zh) * | 2019-07-29 | 2021-02-02 | 华邦电子股份有限公司 | 半导体装置及连续读出方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6181218B2 (ja) * | 2016-02-09 | 2017-08-16 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
JP6668282B2 (ja) * | 2017-03-21 | 2020-03-18 | キオクシア株式会社 | 半導体記憶装置 |
US10811082B1 (en) * | 2019-06-24 | 2020-10-20 | Sandisk Technologies Llc | Non-volatile memory with fast data cache transfer scheme |
US10825526B1 (en) | 2019-06-24 | 2020-11-03 | Sandisk Technologies Llc | Non-volatile memory with reduced data cache buffer |
US11556656B2 (en) * | 2019-09-25 | 2023-01-17 | Micron Technology, Inc. | Exclusive or engine on random access memory |
US11651800B2 (en) | 2021-06-22 | 2023-05-16 | Sandisk Technologies Llc | Sense amplifier mapping and control scheme for non-volatile memory |
US11977752B2 (en) | 2022-02-24 | 2024-05-07 | Silicon Motion, Inc. | Flash memory controller and method capable of sending data toggle set-feature signal to enable, disable, or configure data toggle operation of flash memory device |
US11977776B2 (en) | 2022-02-24 | 2024-05-07 | Silicon Motion, Inc. | Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes |
US11972146B2 (en) | 2022-02-24 | 2024-04-30 | Silicon Motion, Inc. | Flash memory controller and method capable of sending read command or data toggle command to ask for flash memory device return more plane data of different planes |
US11935595B2 (en) | 2022-02-24 | 2024-03-19 | Silicon Motion, Inc. | Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence |
JP2023122783A (ja) * | 2022-02-24 | 2023-09-05 | キオクシア株式会社 | 半導体記憶装置 |
US11861212B2 (en) | 2022-02-24 | 2024-01-02 | Silicon Motion, Inc. | Flash memory device, controller, and method capable of performing access operation upon data unit(s) of multiple planes of flash memory device in response one simplified command sequence |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1147676A (zh) * | 1994-08-05 | 1997-04-16 | 美国电报电话公司 | 先进先出存储器 |
CN101404184A (zh) * | 2007-10-04 | 2009-04-08 | 松下电器产业株式会社 | 半导体存储装置 |
CN101436430A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体集成电路装置 |
US20140211566A1 (en) * | 2013-01-31 | 2014-07-31 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US20140286108A1 (en) * | 2013-03-21 | 2014-09-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6349056B1 (en) * | 2000-12-28 | 2002-02-19 | Sandisk Corporation | Method and structure for efficient data verification operation for non-volatile memories |
KR100454119B1 (ko) * | 2001-10-24 | 2004-10-26 | 삼성전자주식회사 | 캐쉬 기능을 갖는 불 휘발성 반도체 메모리 장치 및 그것의 프로그램, 읽기, 그리고 페이지 카피백 방법들 |
JP4708723B2 (ja) * | 2004-03-30 | 2011-06-22 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US7206230B2 (en) * | 2005-04-01 | 2007-04-17 | Sandisk Corporation | Use of data latches in cache operations of non-volatile memories |
JP5178448B2 (ja) * | 2008-10-17 | 2013-04-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2011014195A (ja) * | 2009-07-02 | 2011-01-20 | Toshiba Corp | フラッシュメモリ |
JP2013069357A (ja) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | 半導体記憶装置 |
KR102083450B1 (ko) * | 2012-12-05 | 2020-03-02 | 삼성전자주식회사 | 페이지 버퍼를 포함하는 불휘발성 메모리 장치 및 그것의 동작 방법 |
-
2015
- 2015-06-12 JP JP2015119512A patent/JP6359491B2/ja active Active
-
2016
- 2016-03-03 US US15/060,464 patent/US20160365154A1/en not_active Abandoned
- 2016-03-11 CN CN201610141276.0A patent/CN106251901B/zh active Active
- 2016-03-11 TW TW105107654A patent/TWI618080B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1147676A (zh) * | 1994-08-05 | 1997-04-16 | 美国电报电话公司 | 先进先出存储器 |
CN101404184A (zh) * | 2007-10-04 | 2009-04-08 | 松下电器产业株式会社 | 半导体存储装置 |
CN101436430A (zh) * | 2007-11-16 | 2009-05-20 | 株式会社瑞萨科技 | 半导体集成电路装置 |
US20140211566A1 (en) * | 2013-01-31 | 2014-07-31 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US20140286108A1 (en) * | 2013-03-21 | 2014-09-25 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109426618A (zh) * | 2017-08-31 | 2019-03-05 | 东芝存储器株式会社 | 存储装置及数据处理装置 |
CN112309478A (zh) * | 2019-07-29 | 2021-02-02 | 华邦电子股份有限公司 | 半导体装置及连续读出方法 |
CN112309478B (zh) * | 2019-07-29 | 2024-03-22 | 华邦电子股份有限公司 | 半导体装置及连续读出方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106251901B (zh) | 2020-01-10 |
TW201643874A (zh) | 2016-12-16 |
US20160365154A1 (en) | 2016-12-15 |
JP2017004582A (ja) | 2017-01-05 |
JP6359491B2 (ja) | 2018-07-18 |
TWI618080B (zh) | 2018-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170808 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220214 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |