CN106233425B - 贴合式soi晶圆的制造方法 - Google Patents

贴合式soi晶圆的制造方法 Download PDF

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CN106233425B
CN106233425B CN201580020538.1A CN201580020538A CN106233425B CN 106233425 B CN106233425 B CN 106233425B CN 201580020538 A CN201580020538 A CN 201580020538A CN 106233425 B CN106233425 B CN 106233425B
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polysilicon layer
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fitting
accumulation
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CN106233425A (zh
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若林大士
目黑贤二
中野正刚
八木真一郎
吉田知佐
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Shin Etsu Handotai Co Ltd
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Abstract

本发明是关于一种贴合式SOI晶圆的制造方法，为关于将均以单晶硅所构成的贴合晶圆及基底晶圆透过绝缘膜贴合的贴合式SOI晶圆的制造方法，其中包含：将基底晶圆的贴合面侧堆积多晶硅的步骤，研磨多晶硅层的表面的步骤，于贴合晶圆的贴合面形成绝缘膜的步骤，透过绝缘膜将基底晶圆的多晶硅层的研磨面与贴合晶圆贴合的步骤，以及将经贴合的贴合晶圆薄膜化而形成SOI层的步骤；使用电阻率100Ω·cm以上的单晶硅晶圆，堆积多晶硅层的步骤进一步包含于贴合晶圆的堆积多晶硅层的表面预先形成氧化膜的阶段，多晶硅层的堆积分为二个阶段进行，包含以1010℃以下的第一温度进行的第一成长，及以较第一温度更高温的第二温度进行较第一成长更厚的堆积的第二成长。借此，即使在用以作为载子捕陷层而运作的多晶层的厚度已堆积至充分的厚度时，也能抑制基底晶圆的翘曲的扩大，同时防止多晶硅的单晶化。

Description

贴合式SOI晶圆的制造方法
技术领域
本发明是关于一种贴合式SOI晶圆的制造方法。
背景技术
作为对应高频率(Radio Frequency,RF)装置的SOI晶圆，一直是以将基底晶圆予以高电阻率以解决。但是，为对应进一步的高速化，而逐渐有对应更高的频率的必要，仅使用已知的高电阻晶圆已经逐渐无法解决。
在此，作为对应策提出有于SOI晶圆的埋入氧化膜层(BOX层)正下方，加入具有使产生的载子消灭的层(载体捕陷层)，逐渐有必要将用以使高电阻晶圆中所产生的载子再结合的多晶硅层形成于基底晶圆上。
专利文献1中，记载有于BOX层及基底晶圆的境界面形成作为载子捕陷层的多晶硅层或非晶硅层。
另一方面，专利文献2中，也记载有于BOX层及基底晶圆的境界面形成作为载子捕陷层的多晶硅层，进一步限制多晶硅层形成后的热处理温度以防止多晶硅层的再结晶化。
在另一专利文献3中，虽未记载有形成作为载子捕陷层的多晶硅层或非晶硅层，但记载有透过将与贴合晶圆贴合的一侧的基底晶圆表面的表面粗糙度放大，能够得到与载子捕陷层同样的效果。
〔现有技术文献〕
专利文献1：日本特表2007-507093号公报
专利文献2：日本特表2013-513234号公报
专利文献3：日本特开2010-278160号公报
发明内容
[发明所欲解决的问题]
如同前述，为了制造对应更高频率的装置，逐渐有必要于SOI晶圆的BOX层下形成载子捕陷层。
进一步而言，用以使其作为载子捕陷层而运作的多晶硅层的厚度，由于为相对较厚，例如0.5μm以上，因此以尽可能以高速而仅于单面成长为佳。但是，经本申请发明人研讨的结果，得知若仅于单面堆积较厚的多晶硅层，则随着厚度增加晶圆的翘曲也会变大，而成为贴合不良的原因。
另一方面，得知虽然为了尽可能以高速堆积多晶硅层而有提高成长温度的必要，但若成长温度提高，将会有基底晶圆表面的自然氧化膜的一部分消失，该部分将不成长多晶硅而单晶化的问题。
鉴于前述问题，本发明的目的在于提出一种贴合式SOI晶圆的制造方法，即使在用以作为载子捕陷层而运作的多晶层的厚度已堆积至充分的厚度时，也能抑制基底晶圆的翘曲的扩大，同时防止多晶硅的单晶化。
[解决问题的技术手段]
为达成前述目的，本发明提供一种贴合式SOI晶圆的制造方法，系关于将皆以单晶硅所构成的贴合晶圆及基底晶圆透过绝缘膜贴合的贴合式SOI晶圆的制造方法，其中包含：
将该基底晶圆的贴合面侧堆积多晶硅的步骤，
研磨该多晶硅层的表面的步骤，
于该贴合晶圆的贴合面形成该绝缘膜的步骤，
透过该绝缘膜将该基底晶圆的该多晶硅层的研磨面与该贴合晶圆贴合的步骤，以及
将经贴合的该贴合晶圆薄膜化而形成SOI层的步骤；
使用电阻率100Ω·cm以上的单晶硅晶圆，该堆积多晶硅层的步骤进一步包含于贴合晶圆的堆积该多晶硅层的表面预先形成氧化膜的阶段，该多晶硅层的堆积分为二个阶段进行，包含以1010℃以下的第一温度进行的第一成长，及以较第一温度更高温的第二温度进行较第一成长更厚的堆积的第二成长。
如此，预先于基底晶圆的单晶硅表面形成氧化膜，透过使多晶硅层的堆积温度为1010℃以下，能够防止基底晶圆表面的氧化膜的一部份消失，借此能够防止多晶层的单晶化，而能够维持其作为载子捕陷层的效果。
进一步以1010℃以下的低温堆积多晶层后，以较其更高温，且堆积更厚的多晶硅层，能够高速而有效率的堆积充分厚度的多晶硅层，并能够抑制晶圆的翘曲。
此时，该氧化膜以透过湿洗形成为佳。
由于使氧化膜存在基底晶圆及多晶硅层之间可能影响RF装置的特性，因此所形成的氧化膜厚度以较薄为佳，例如以10nm以下的厚度为佳。作为形成如此厚度的氧化膜的方法，能够举出湿洗为最简易的方法。
此时，以该第一温度为900℃以上，该第二温度为1100℃以上为佳。
若使第一温度为900℃以上，则能够防止堆积速度太慢而使生产性低落。
又若使第二温度为1100℃以上，则在得到充分快速的堆积速度而生产性上升的同时，也能充分抑制多晶硅层堆积后的晶圆翘曲。
进一步而言，即使SOI晶圆的制造步骤的热处理步骤或装置制造步骤的热处理为相对高温(例如，1000至1200℃度)，由于以与其同等的温度进行多晶硅层的堆积，因此能够充分抑制多晶硅层的晶界成长，维持作为载子捕陷层的效果。
此时，以该多晶硅层贴合时的厚度在2μm以上为佳。
借由使多晶硅层的贴合时厚度在2μm以上虽然会由于晶圆的翘曲的影响而提高贴合不良的机率，但即使多晶硅层的贴合时的厚度在2μm以上，若是多晶硅层的堆积中以较第一成长时更高的高温进行第二成长，则能够降低晶圆的翘曲，因此能够提高作为载子捕陷层的效果，同时追求贴合不良的减低。
[对照现有技术的功效]
如同前述，依照本发明，透过预先于基底晶圆的单晶硅的表面形成氧化膜，并使多晶硅层的堆积温度为1010℃以下，能够防止基底晶圆表面的氧化膜的一部分消失，防止多晶硅层的单晶化的发生，并维持作为载子捕陷的效果。
进一步而言，以1010℃以下的低温堆积多晶硅层后，以较其更高温，且堆积更厚的多晶硅层，能够高速而有效率的堆积充分厚度的多晶硅层，并能够抑制晶圆的翘曲。
附图简要说明
图1是显示本发明的贴合式SOI晶圆的制造方法的实施例之一的制造流程图。
图2是显示本发明的贴合式SOI晶圆的制造方法的实施例之一的步骤剖面示意图。
具体实施方式
以下关于本发明，虽作为实施例之一参照图式进行说明，但本发明并非限定于此。
如同前述，虽然为了制作对应更高频率的装置而逐渐有必要于SOI晶圆的BOX层下形成载子捕陷层，但由于用以作为载子捕陷层运作的多晶硅层要求有较厚的膜厚度，以尽可能高速仅于单面成长较为适合。但是，若仅于单面堆积较厚的多晶硅层，则会有随着厚度增加晶圆的翘曲也会变大，而成为贴合不良的原因的问题。进一步而言，为了尽可能以高速堆积多晶硅层而有提高成长温度的必要，但若成长温度提高，将会有基底晶圆表面的自然氧化膜的一部分消失，该部分将不成长多晶硅而单晶化的问题。
在此，本申请发明人研究一种贴合式SOI晶圆的制造方法，该贴合式SOI晶圆的制造方法即使在用以作为载子捕陷层而运作的多晶层的厚度已堆积至充分的厚度时，也能抑制基底晶圆的翘曲的扩大，同时防止多晶硅的单晶化。
结果，本案发明人发现预先于基底晶圆的单晶硅表面形成氧化膜，之后透过使多晶硅层的堆积温度为1010℃以下，能够防止基底晶圆表面的氧化膜的一部份消失，借此能够防止多晶层的单晶化，而能够维持其作为载子捕陷层的效果，进一步，以1010℃以下的低温堆积多晶层后，以较其更高温，且堆积更厚的多晶硅层，能够高速而有效率的堆积充分厚度的多晶硅层，并能够抑制晶圆的翘曲，而完成本发明。
以下，参照第1至2图，说明本发明的贴合式SOI晶圆的制造方法的实施例之一。
首先，准备由单晶硅所构成的贴合晶圆10(参照图1的步骤S11及图2步骤(a))。
接着，透过例如热氧化或化学气相沉积等，于贴合晶圆10，使成为埋入氧化膜层(BOX层)16的绝缘膜(例如氧化膜)13成长(参照图1的步骤S12及图2的步骤(b))。
接着，于该绝缘膜13的上方以离子注入机注入氢离子及堕性气体离子中的至少一种，于贴合晶圆10内形成离子注入层17(参照图1的步骤S13及图2的步骤(c))。此时，选择离子注入加速电压以得到目标的SOI层15的厚度。
接着进行贴合前洗净(参照图1的步骤S14)，以除去贴合晶圆10的贴合面的微粒子。
另一方面，除了前述之外，准备由单晶硅所构成的基底晶圆11(参照图1的步骤S21及图2的步骤(d))。
接着，于基底晶圆11上形成氧化膜(基底氧化膜)20(参照图1的步骤S22及图2的步骤(e))。氧化膜20的厚度虽无特别限定，但使氧化膜存在基底晶圆及多晶硅层之间可能影响RF装置的特性，因此所形成的氧化膜厚度以较薄为佳，例如以0.3nm以上，10nm以下的厚度为佳。
作为形成如此厚度的氧化膜的方法，能够举出湿洗为最简易的方法。具体而言，能够透过使用SC1(NH4OH与H2O2的混合水溶液)、SC2(HCl与H2O2的混合水溶液)、SPM(H2SO4与H2O2的混合水溶液)及臭氧水等的洗净，或是进行将此些组合的洗净，以形成厚度在0.5至3nm的均匀的氧化膜。
接着，使多晶硅层12堆积于氧化膜(基底氧化膜)20上(参照图1的步骤S23及图2的步骤(f))。此处，多晶硅层12的堆积，分为以1010℃以下的第一温度所进行的第一成长，及以较第一温度高的第二温度以进行较第一成长厚的堆积的第二成长(于第一成长后进行)的二个阶段。
基底晶圆的单晶硅的表面与堆积的多晶硅层之间，预先形成氧化膜，透过使之后所进行的第一成长时的堆积温度为1010℃以下，能够防止基底晶圆表面的氧化膜的一部份消失。进一步，以1010℃以下的低温堆积预定的膜厚度(0.5μm左右)后，于第二成长中以较第一成长更高温，且堆积更厚的多晶硅层，能够高速而有效率的堆积充分厚度的多晶硅层，同时能够抑制晶圆的翘曲。
另外，此二个阶段的成长可以连续进行，也可暂时自成长炉取出，之后进行第二成长。
接着，将于基底晶圆11所堆积的多晶硅层12的表面透过研磨而平坦化(参照图1的步骤S24及图2的步骤(g))。由于以高温堆积的多晶硅层12的表面粗糙度较大，会难以直接贴合，因此有必要将多晶硅层12的表面透过研磨而平坦化。
接着，进行贴合前洗净(参照图1的步骤S25)以去除经研磨后的多晶硅层12的表面的微粒子。
另外，图1的步骤S11至S14，与图1的步骤S1至S25可为并行进展。
接着，将形成有多晶硅层12的基底晶圆11与形成有绝缘膜13的贴合晶圆10密着而贴合，以使基底晶圆11形成有的多晶硅层12的面与贴合晶圆10的注入面相接(参照图1的步骤S31及图2的步骤(h))。
接着，对贴合的晶圆施以使离子注入层17产生微小气泡层的热处理(剥离热处理)，于所发生的微小气泡层剥离，而制作基底晶圆11上形成有埋入氧化膜层16及SOI层15的贴合晶圆式14(参照图1的步骤S32及图2的步骤(i))。另外，于此时派生有具有剥离面19的剥离晶圆18。
接着对贴合式晶圆14施以结合热处理，以使贴合接口的结合强度增加(参照图1的步骤S33)。
如同前述而能够制造贴合式SOI晶圆。
前述所说明的本发明的贴合式SOI晶圆的制造方法中，多晶硅层12的堆积的第一成长时的第一温度以900℃以上为佳。若使第一温度为900℃以上，则能够防止堆积速度过于缓慢而使生产性低落。
又多晶硅层12的堆积的第二成长时的第二温度以1100℃以上为佳。若使第二温度为1100℃以上，则在得到充分快速的堆积速度而使生产性提升的同时，也能充分抑制多晶硅层堆积后的晶圆的翘曲。进一步而言，SOI晶圆制造步骤的热处理步骤或装置制造步骤的热处理即使为相对高温(例如1000至1200℃左右)，由于以与其同等的温度进行多晶硅的堆积，多晶硅层的晶界成长受到充分抑制，能够维持其作为载子捕陷层的效果。
另外第二温度的上限虽无特别限定，但没有必要高于SOI晶圆制造步骤或装置制造步骤的最高温度(过高则容易发生滑移错位或金属污染)，因此以最高温度以下，例如1200℃以下为佳。
又前述所说明的本发明的贴合式晶圆的制造方法中，多晶硅层12的贴合时的厚度以为2μm以上为佳。
借由使多晶硅层的贴合时厚度在2μm以上虽然会由于晶圆的翘曲的影响而提高贴合不良的机率，但即使多晶硅层的贴合时的厚度在2μm以上，若是多晶硅层的堆积中以较第一成长时更高的高温进行第二成长，则能够降低晶圆的翘曲，因此能够提高作为载子捕陷层的效果，同时追求贴合不良的减低。
另外，多晶硅层的贴合时厚度以10μm以下为佳。
又基底晶圆11的电阻率只要为100Ω·cm以上便适合用于高频率装置制造，为1000Ω·cm以上则更佳，3000Ω·cm以上则特佳。电阻率的上限虽无特别限定，但可为例如50000Ω·cm。
以下虽显示实施例及比较例以更具体的说明本发明，但本发明并不限定于此。
(实施例1)
使用于第1至2图所说明的制造方法制作贴合式SOI晶圆。但是，作为基底晶圆，使用直径200mm、晶体方位<100>、电阻率700Ω·cm、p型的单晶硅，形成基底氧化膜、堆积多晶硅(使用三氯氢硅做为原料气体)、BOX氧化、注入氢离子、剥离热处理、结合热处理以以下的条件进行。
形成基底氧化膜：SC1+SC2洗净，氧化膜厚度约1nm
堆积多晶硅层：900℃，常压，膜厚度0.3μm+1130℃，常压膜厚度2.7μm(研磨后的总厚度2.2μm)
BOX氧化：1050℃，氧化膜厚度400nm
注入氢离子：105keV，7.5×1016/cm2
剥离热处理：500℃，30分钟，100％Ar氛围
结合热处理：900℃高温蒸气氧化+1100℃120分钟的Ar退火处理
又测量多晶硅层研磨后的晶圆的翘曲，调查结合热处理后的多晶硅层的单晶化状况(以剖面SEM观察而确认)。显示其结果于表1。
(实施例2)
与实施例1同样制作贴合式SOI晶圆。但是多晶硅的堆积，以950℃、常压、膜厚度0.3μm+1130℃、常压、膜厚度2.7μm(研磨后的总厚度2.2μm)的条件以进行。
与实施例1同样测量多晶硅层研磨后的晶圆的翘曲，调查结合热处理后的多晶硅层的单晶化状况。显示其结果于表1。
(实施例3)
与实施例1同样制作贴合式SOI晶圆。但是多晶硅的堆积，以1010℃、常压、膜厚度0.3μm+1130℃、常压、膜厚度2.7μm(研磨后的总厚度2.2μm)的条件以进行。
与实施例1同样测量多晶硅层研磨后的晶圆的翘曲，调查结合热处理后的多晶硅层的单晶化状况。显示其结果于表1。
(实施例4)
与实施例1同样制作贴合式SOI晶圆。但是基底氧化膜的形成，以800℃、dryO2氧化、氧化膜厚度30nm的条件以进行，多晶硅层的堆积，以980℃、常压、膜厚度0.3μm+1100℃、常压、膜厚度2.7μm(研磨后的总厚度2.2μm)的条件以进行。
与实施例1同样测量多晶硅层研磨后的晶圆的翘曲，调查结合热处理后的多晶硅层的单晶化状况。显示其结果于表1。
(比较例1)
与实施例1同样制作贴合式SOI晶圆。但是多晶硅的堆积不分为第一成长及第二成长的二个阶段，以1000℃，常压、膜厚度3μm(研磨后的总厚度2.2μm)的一个阶段的条件以进行。
与实施例1同样测量多晶硅层研磨后的晶圆的翘曲，调查结合热处理后的多晶硅层的单晶化状况。显示其结果于表1。
(比较例2)
与实施例1同样制作贴合式SOI晶圆。但是多晶硅的堆积不分为第一成长及第二成长的二个阶段，以1020℃，常压、膜厚度3μm的一个阶段的条件以进行。
另外于比较例2中，以多晶硅层堆积后的SEM观察确认到单晶的堆积，由于没有堆积为多晶硅层，因此不实施之后的步骤。
【表1】
自表1可得知，将多晶硅层的堆积，分为以1010℃以下进行的第一成长及以较第一成长时的温度高的温度而进行较第一成长厚的堆积的第二成长以进行的实施例1至4，能够抑制晶圆的翘曲，同时防止多晶硅的单晶化。特别是将第二成长以1100℃以上进行的实施例1、3至4，与将第二成长以1100℃以下进行的实施例2相比，能够更加缩小晶圆的翘曲。
另一方面，不将多晶硅层的堆积分为第一成长及第二成长而于1000℃以进行的比较例1，虽然能够防止多晶硅的单晶化，但与实施例1至4相比晶圆的翘曲变得较大。
进一步来说，不将多晶硅层的堆积分为第一成长及第二成长而于1020℃以进行的比较例2，在多晶硅层堆积结束时发生了多晶硅的单晶化。
另外，本发明并不为前述实施例所限制。前述实施例为例示，具有与本发明的申请专利范围所记载的技术思想为实质相同的构成，且达成同样作用效果者，皆包含于本发明的技术范围。

Claims (2)

1.一种贴合式SOI晶圆的制造方法，为关于将均以单晶硅所构成的贴合晶圆及基底晶圆透过绝缘膜贴合的贴合式SOI晶圆的制造方法，其中包含：
将该基底晶圆的贴合面侧堆积多晶硅的步骤，
研磨该多晶硅层的表面的步骤，
于该贴合晶圆的贴合面形成该绝缘膜的步骤，
透过该绝缘膜将该基底晶圆的该多晶硅层的研磨面与该贴合晶圆贴合的步骤，以及
将经贴合的该贴合晶圆薄膜化而形成SOI层的步骤；
使用电阻率100Ω·cm以上的单晶硅晶圆，该堆积多晶硅层的步骤进一步包含于基底晶圆的堆积该多晶硅层的表面预先形成氧化膜的阶段，该多晶硅层的堆积分为二个阶段进行，包含以1010℃以下的第一温度进行的第一成长，及以较第一温度更高温的第二温度进行较第一成长更厚的堆积的第二成长，
使该第一温度为900℃以上，该第二温度为1100℃以上，
于第一成长及第二成长中，使用三氯氢硅做为原料气体，于常压下堆积该多晶硅层，
该氧化膜是由湿洗所形成，厚度为0.3nm以上、10nm以下。
2.如权利要求1所述的贴合式SOI晶圆的制造方法，该多晶硅层贴合时的厚度在2μm以上。
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