JP5209592B2 - 受光素子の作製方法 - Google Patents
受光素子の作製方法 Download PDFInfo
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- JP5209592B2 JP5209592B2 JP2009267811A JP2009267811A JP5209592B2 JP 5209592 B2 JP5209592 B2 JP 5209592B2 JP 2009267811 A JP2009267811 A JP 2009267811A JP 2009267811 A JP2009267811 A JP 2009267811A JP 5209592 B2 JP5209592 B2 JP 5209592B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 39
- 239000002245 particle Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 23
- 238000001179 sorption measurement Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Description
3 スパッタリング装置
11 基板
12 第1の電極
13 N型半導体
14 P型半導体
15 第2の電極
17 電源
31 チャンバ
32 台
34 ターゲット
35 電極
36 電源
37 光発振器
51 粒子
54 局所形状
Claims (3)
- P型半導体とN型半導体とを接合したPN接合と、上記P型半導体並びにN型半導体にそれぞれ接続された各電極とを有する受光素子の作製方法において、
上記P型半導体、上記N型半導体、上記各電極の何れかを構成する材料を、逆バイアス電圧を印加するとともに、堆積させる材料の吸収波長よりも長波長である希望波長の光を照射しつつ堆積させる堆積工程を有し、
上記堆積工程は、
上記希望波長の照射光により近接場光を発生可能な局所形状が上記堆積させている材料表面に形成されている箇所では、当該局所形状に発生した近接場光による非断熱過程を通じて上記希望波長の照射光を光吸収して電子を生成するとともに、その生成した電子により当該局所形状に上記逆バイアス電圧に基づく局所電場が生じるのを打ち消すことを連続して行う非断熱フローと、
上記局所形状が未形成の箇所では、上記逆バイアス電圧に基づく局所電場が生じた箇所に上記材料を構成する粒子を順次吸着させ、その吸着プロセスを経て上記局所形状が形成された場合には上記非断熱フローへ移行する粒子吸着フローとを有すること
を特徴とする受光素子の作製方法。 - 上記非断熱フローと上記粒子吸着フローとを継続して実行することにより、上記堆積させている材料表面に上記局所形状を順次形成させていくこと
を特徴とする請求項1記載の受光素子の作製方法。 - 請求項1又は2記載の受光素子の作製方法により作製されたことを特徴とする受光素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009267811A JP5209592B2 (ja) | 2009-11-25 | 2009-11-25 | 受光素子の作製方法 |
DE112010004544T DE112010004544T5 (de) | 2009-11-25 | 2010-11-24 | Verfahren zur Herstellung eines Lichtaufnahmeelements und Vorrichtung zur Herstellung des Lichtaufnahmeelements |
CN201080035324.9A CN102473791B (zh) | 2009-11-25 | 2010-11-24 | 受光元件的制作方法、受光元件制作装置 |
PCT/JP2010/006858 WO2011064993A1 (ja) | 2009-11-25 | 2010-11-24 | 受光素子の作製方法、受光素子作製装置 |
US13/511,734 US20130009193A1 (en) | 2009-11-25 | 2010-11-24 | Method of fabricating light receiving element and apparatus for fabricating light receiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009267811A JP5209592B2 (ja) | 2009-11-25 | 2009-11-25 | 受光素子の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011114076A JP2011114076A (ja) | 2011-06-09 |
JP5209592B2 true JP5209592B2 (ja) | 2013-06-12 |
Family
ID=44066101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009267811A Expired - Fee Related JP5209592B2 (ja) | 2009-11-25 | 2009-11-25 | 受光素子の作製方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130009193A1 (ja) |
JP (1) | JP5209592B2 (ja) |
CN (1) | CN102473791B (ja) |
DE (1) | DE112010004544T5 (ja) |
WO (1) | WO2011064993A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012169565A (ja) * | 2011-02-16 | 2012-09-06 | Optoelectronics Industry And Technology Development Association | 受光素子の作製方法 |
JP5946278B2 (ja) * | 2012-01-18 | 2016-07-06 | 特定非営利活動法人ナノフォトニクス工学推進機構 | 被加工体の熱加工方法 |
JP6073599B2 (ja) * | 2012-08-24 | 2017-02-01 | 特定非営利活動法人ナノフォトニクス工学推進機構 | エレクトロルミネッセンス素子の作製方法 |
JP6100200B2 (ja) * | 2014-04-24 | 2017-03-22 | 信越半導体株式会社 | 貼り合わせsoiウェーハの製造方法 |
JP6529048B2 (ja) * | 2017-09-22 | 2019-06-12 | 株式会社ソディック | 発光デバイスの製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3939669B2 (ja) * | 2003-03-14 | 2007-07-04 | 独立行政法人科学技術振興機構 | 薄膜の作製方法、並びに微粒子の堆積方法 |
JP5044354B2 (ja) * | 2007-10-10 | 2012-10-10 | 国立大学法人 東京大学 | 表面平坦化方法 |
-
2009
- 2009-11-25 JP JP2009267811A patent/JP5209592B2/ja not_active Expired - Fee Related
-
2010
- 2010-11-24 WO PCT/JP2010/006858 patent/WO2011064993A1/ja active Application Filing
- 2010-11-24 DE DE112010004544T patent/DE112010004544T5/de not_active Withdrawn
- 2010-11-24 US US13/511,734 patent/US20130009193A1/en not_active Abandoned
- 2010-11-24 CN CN201080035324.9A patent/CN102473791B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011114076A (ja) | 2011-06-09 |
CN102473791B (zh) | 2014-10-08 |
CN102473791A (zh) | 2012-05-23 |
WO2011064993A1 (ja) | 2011-06-03 |
US20130009193A1 (en) | 2013-01-10 |
DE112010004544T5 (de) | 2012-12-06 |
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