JP2013042188A - 三次元多接合光起電力装置 - Google Patents
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 28
- 239000004020 conductor Substances 0.000 claims description 9
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000002071 nanotube Substances 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000002041 carbon nanotube Substances 0.000 description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 47
- 229910021393 carbon nanotube Inorganic materials 0.000 description 45
- 210000004027 cell Anatomy 0.000 description 25
- 229910004613 CdTe Inorganic materials 0.000 description 17
- 238000000034 method Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000000224 chemical solution deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
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- 235000012431 wafers Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000013742 energy transducer activity Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
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- 239000004038 photonic crystal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
【解決手段】光起電力装置200は、第1のエネルギ吸収素子に衝突する光子からのエネルギを第1の電流に変換するように構成された第1のエネルギ吸収素子と、第1のエネルギ吸収素子に対して非平行に方向付けられ、第2のエネルギ吸収素子に衝突する光子からのエネルギを第2の電流に変換するように構成された第2のエネルギ吸収素子とを備え、光子は、第1のエネルギ吸収素子に衝突した後に第2のエネルギ吸収素子に衝突し、前記第1のエネルギ吸収素子に沿って延在するトップコンタクトの部分は、前記第2のエネルギ吸収素子に沿って延在するトップコンタクトの部分に対して非平行になるように方向付けられており、前記第1のエネルギ吸収素子および前記第2のエネルギ吸収素子は、異なるバンドギャップ値を有する。
【選択図】図2
Description
本願は、2006年2月28日、PCT国際特許出願として、米国以外のすべての国を指定国とする場合の出願人を米国企業ジョージア テック リサーチ コーポレイション(Georgia Tech Research Corporation)とし、米国のみを指定国とする場合の出願人を米国民ウィリアム・ジャドソン・レディ(William Judson Ready)として出願され、2005年3月1日に出願された米国仮出願第60/657,486号および2005年3月18日に出願された米国仮出願第60/663,389号の優先権を主張し、これらはいずれも本明細書に引用により援用される。
。エネルギが2.4eVより大きな光子は、CdTeエネルギ吸収面における電子を励起させ、励起した電子を導電させる。一方、シリコンのバンドギャップはそれよりも低く約1.5eVである。
Seで被覆されたCNTがバスバー上に成長させた上部セルの役割を果たす一方、下部セルがポリシリコンセル(Eg=1.1eV)の場合の多接合装置に使用することができる。多接合装置においては、CdSeとSiとの間のバンドギャップ対は効率的である。さらに、上記のように、インジウムスズ酸化物(ITO)を本発明に従う実施例の光起電力装置に応用してもよい。たとえば、ITOを用いて透明トップコンタクトを形成してもよい。ITOを三次元アレイ構造の上に堆積させる、蒸発および溶液に基づいた技術を用いてもよい。
射および光トラップに、正方形構造は理想的でない。多面CNTタワー(すなわち星型)の表面積はより大きく光トラップ機能が高まる。さらに、CNT円筒タワーは均一性をもたらすとともにp/n−型材料内の内部応力を減じる。こうした応力は、電子−正孔対の再結合の中心となる転位を引起こし、光起電力装置の効率を低下させる可能性がある。
Claims (13)
- 光起電力装置であって、
第1のエネルギ吸収素子を含み、前記第1のエネルギ吸収素子は、第1のエネルギ吸収素子に衝突する光子からのエネルギを第1の電流に変換するように構成され、
第1のエネルギ吸収素子に対して非平行に方向付けられた第2のエネルギ吸収素子を含み、前記第2のエネルギ吸収素子は、第2のエネルギ吸収素子に衝突する光子からのエネルギを第2の電流に変換するように構成され、光子は、第1のエネルギ吸収素子に衝突した後に第2のエネルギ吸収素子に衝突し、
前記第1のエネルギ吸収素子および前記第2のエネルギ吸収素子に沿って延在するトップコンタクトを含み、前記第1のエネルギ吸収素子に沿って延在するトップコンタクトの部分は、前記第2のエネルギ吸収素子に沿って延在するトップコンタクトの部分に対して非平行になるように方向付けられており、
前記第1のエネルギ吸収素子および前記第2のエネルギ吸収素子は、異なるバンドギャップ値を有する、光起電力装置。 - 前記第1のエネルギ吸収素子は、前記第1の電流のための導体を与えるように構成された導体タワーを含む、請求項1に記載の光起電力装置。
- 前記導体タワーは金属製である、請求項2に記載の光起電力装置。
- 前記導体タワーは円筒形のプロファイルを有する、請求項2に記載の光起電力装置。
- 前記第1のエネルギ吸収素子は、ドープされたSi、InGaP、GaAs、GaN、CdSe、CIGSおよびCISからなる群から選ばれたいずれかの材料を含んでいる、請求項2に記載の光起電力装置。
- 前記導体タワーは、前記第1のエネルギ吸収素子のコアとして構成されている、請求項2に記載の光起電力装置。
- 前記第1のエネルギ吸収素子は、前記第1の電流のための導体を与えるように構成された導電性ナノチューブを含む、請求項1に記載の光起電力装置。
- 前記第1のエネルギ吸収素子は、前記第1の電流のための構造を与えるように構成された導電性ナノチューブを含む、請求項1に記載の光起電力装置。
- 前記第1のエネルギ吸収素子は、金属製のコアの上に重なっている、請求項1に記載の光起電力装置。
- 前記第1のエネルギ吸収素子は、シリコン(Si)を含む、請求項1に記載の光起電力装置。
- 前記トップコンタクトは、透明導電酸化物(TCO)を含む、請求項1に記載の光起電力装置。
- 前記光起電力装置は、軸から外れた光子衝突のために位置決めされている、請求項1に記載の光起電力装置。
- 前記導体タワーは、軸から外れた光子衝突のために位置決めされている、請求項1に記載の光起電力装置。
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US65748605P | 2005-03-01 | 2005-03-01 | |
US60/657,486 | 2005-03-01 | ||
US66338905P | 2005-03-18 | 2005-03-18 | |
US60/663,389 | 2005-03-18 |
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AU2006297870B2 (en) * | 2005-03-01 | 2009-04-30 | Georgia Tech Research Corporation | Three dimensional multi-junction photovoltaic device |
WO2008048233A2 (en) | 2005-08-22 | 2008-04-24 | Q1 Nanosystems, Inc. | Nanostructure and photovoltaic cell implementing same |
US8716594B2 (en) * | 2006-09-26 | 2014-05-06 | Banpil Photonics, Inc. | High efficiency photovoltaic cells with self concentrating effect |
US8431818B2 (en) | 2007-05-08 | 2013-04-30 | Vanguard Solar, Inc. | Solar cells and photodetectors with semiconducting nanostructures |
US7999176B2 (en) | 2007-05-08 | 2011-08-16 | Vanguard Solar, Inc. | Nanostructured solar cells |
WO2008141271A1 (en) | 2007-05-10 | 2008-11-20 | Newcyte, Inc. | Artificial retinal implant |
WO2009005805A2 (en) * | 2007-07-03 | 2009-01-08 | Solasta, Inc. | Distributed coax photovoltaic device |
US20090194160A1 (en) * | 2008-02-03 | 2009-08-06 | Alan Hap Chin | Thin-film photovoltaic devices and related manufacturing methods |
US8592675B2 (en) * | 2008-02-29 | 2013-11-26 | International Business Machines Corporation | Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures |
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