CN106103386A - 接合体的制造方法及功率模块用基板的制造方法 - Google Patents
接合体的制造方法及功率模块用基板的制造方法 Download PDFInfo
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Abstract
本发明的接合体的制造方法为接合由陶瓷构成的陶瓷部件与由Cu或Cu合金构成的Cu部件而成的接合体的制造方法,所述接合体的制造方法具备:层叠工序,经由钎料和活性金属材在所述陶瓷部件的一面侧层叠所述Cu部件,所述钎料包含Cu及与该Cu进行共晶反应的共晶元素;及加热处理工序,对层叠的所述陶瓷部件及所述Cu部件进行加热处理。
Description
技术领域
本发明涉及一种牢固地接合陶瓷部件与Cu部件的接合体的制造方法及使用该接合体的制造方法的功率模块用基板的制造方法。
本申请主张基于2014年4月25日于日本申请的专利申请2014-091955号的优先权,并将其内容援用于此。
背景技术
LED或功率模块等的半导体装置具备在由导电材料构成的电路层上接合半导体元件的结构。
为了控制风力发电、电动汽车等电动车辆等的大功率而使用的功率半导体元件的发热量较多。因此,作为搭载这种功率半导体元件的基板,例如能够使用Si3N4(氮化硅)、AlN(氮化铝)、Al2O3(氧化铝)等耐热性及绝缘性优异的陶瓷基板。而且,以往就被广泛使用在该陶瓷基板的一个面将导电性优异的金属板作为电路层接合的功率模块用基板。并且,有时也在陶瓷基板的另一个面接合金属板。
例如,专利文献1所示的功率模块用基板具备如下结构,即在陶瓷基板(陶瓷部件)的一个面通过接合Cu板(Cu部件)来形成电路层。该功率模块用基板中,在陶瓷基板的一个面夹着Cu-Mg-Ti钎料配置Cu板的状态下进行加热处理,从而接合Cu板。
专利文献1:日本专利第4375730号公报
如专利文献1中所公开那样,若经由Cu-Mg-Ti钎料将陶瓷基板与Cu板接合而形成电路层,则在陶瓷基板与钎料的接合界面较厚地形成包含Cu、Mg或Ti的金属间化合物层。
由于形成于该陶瓷基板与钎料的接合界面的金属间化合物层较硬,因此负载冷热循环时,有可能降低陶瓷基板与电路层的接合可靠性。
发明内容
本发明是鉴于上述情况而完成的,其目的在于提供一种能够良好地接合陶瓷部件与Cu部件且接合可靠性高的接合体的制造方法、及使用该接合体的制造方法的功率模块用基板的制造方法。
为了解决上述课题,本发明的第一方式所涉及的接合体的制造方法为接合由陶瓷构成的陶瓷部件与由Cu或Cu合金构成的Cu部件而成的接合体的制造方法,所述接合体的制造方法具备:层叠工序,经由钎料和活性金属材在所述陶瓷部件的一面侧层叠所述Cu部件,所述钎料包含Cu及与该Cu进行共晶反应的共晶元素;及加热处理工序,对层叠的所述陶瓷部件及所述Cu部件进行加热处理。
根据这种接合体的制造方法,在接合陶瓷部件与Cu部件时,经由钎料和活性金属材进行接合,所述钎料包含Cu及与该Cu进行共晶反应的共晶元素,由此可在较低的接合温度且较高的接合强度下,接合陶瓷部件与Cu部件并且能够获得接合可靠性较高的接合体。
在所述层叠工序中,在所述陶瓷部件侧配置所述钎料,且在所述Cu部件侧配置所述活性金属材。
该构成中,在所述加热工序中,已熔融的钎料可靠地与陶瓷部件接触,并能够良好地接合陶瓷部件与Cu部件。
所述共晶元素为选自Ca、Ge、Sr、Sn、Sb、Ba、La、Ce及Al中的一种或两种以上的元素。
通过采用这些共晶元素,能够对Cu进行共晶反应,且能够较大地降低钎料的熔融温度。因此,能够以较低的温度接合陶瓷部件与Cu部件。
在所述层叠工序中,进一步在所述陶瓷部件的另一面侧层叠由Al或Al合金构成的Al部件,在所述加热处理工序中,对层叠的所述陶瓷部件、所述Cu部件及所述Al部件进行加热处理。
若使用由Cu及与该Cu进行共晶反应的元素构成的钎料,则能够以低于Al的熔点的温度熔融钎料,并能够将在陶瓷部件的一个面接合Cu部件的工序及在另一个面接合Al部件的工序以一个工序进行。
所述陶瓷部件由Si3N4、AlN和Al2O3中的任一种构成。
作为陶瓷部件,选择Si3N4、AlN或Al2O3,由此能够制造绝缘性及散热性优异的接合体。
本发明的第二方式所涉及的功率模块用基板的制造方法为在陶瓷基板的一个面配设有由Cu或Cu合金构成的Cu板的功率模块用基板的制造方法,其中,通过所述各项记载的接合体的制造方法来接合所述陶瓷基板与所述Cu板。
根据本发明的第二方式所涉及的功率模块用基板的制造方法,在陶瓷基板与Cu板之间,经由钎料和活性金属材进行接合,所述钎料由Cu及与该Cu进行共晶反应的共晶元素构成,由此可在较低的接合温度且较高的接合强度下,接合陶瓷基板与Cu板,并且能够获得接合可靠性较高的功率模块用基板。
另外,接合于陶瓷基板的Cu板成为电路层、或者在与接合陶瓷基板上的电路层的面的相反面中所形成的金属层。
根据本发明的接合体的制造方法及功率模块用基板的制造方法,能够良好地接合陶瓷部件与Cu部件。
附图说明
图1为表示本发明的实施方式所涉及的接合体的一例的剖视图。
图2为分步骤地表示本发明的实施方式所涉及的接合体的制造方法的剖视图。
图3为分步骤地表示本发明的实施方式所涉及的功率模块用基板的制造方法的剖视图。
图4为分步骤地表示本发明的实施方式所涉及的功率模块用基板的制造方法的剖视图。
具体实施方式
以下,参考附图,对本发明的接合体的制造方法及功率模块用基板的制造方法进行说明。另外,在以下所示的各实施方式是为了更容易理解发明的宗旨而具体说明的例子,只要没有特别指定,并不限定本发明。并且,在以下的说明中使用的附图为了容易理解本发明的特征,为方便起见,有时放大表示成为重要部位的部分,各构成要件的尺寸比率等不一定与实际上相同。
(接合体)
图1为表示通过本发明的实施方式所涉及的接合体的制造方法获得的接合体的一例的剖视图。
如图1所示,接合体10由陶瓷部件11及配设于该陶瓷部件11的一个面11a(图1中为上表面)侧,且经由钎料接合的Cu部件12构成。
陶瓷部件11由绝缘性及散热性优异的Si3N4(氮化硅)、AlN(氮化铝)、Al2O3(氧化铝)等陶瓷构成。本实施方式中,陶瓷部件11由散热性尤其优异的AlN(氮化铝)构成。并且,陶瓷部件11的厚度例如设定在0.2~1.5mm范围内,本实施方式中,设定为0.635mm。
Cu部件12由Cu或Cu合金构成。本实施方式中,Cu部件由无氧铜构成,厚度例如设定在0.1mm以上且1.0mm以下的范围内,本实施方式中,设定为0.6mm。
Cu部件12通过钎料及活性金属材接合于陶瓷部件11的一个面11a。
钎料由Cu及与该Cu进行共晶反应的共晶元素构成。用于钎料的共晶元素例如选自通过与Cu的共晶反应来形成与Al相比具有低的熔点的合金的元素。作为与Cu进行共晶反应的元素,可举出Ca、Ge、Sr、Sn、Sb、Ba、La、Ce、Al(以下,这些元素称为共晶元素)。而且,选自这些共晶元素中的一种或两种以上的元素含于钎料中。
含于钎料中的共晶元素可设在下述的范围内(质量%)。
Ca:32%以上且78%以下(更优选34%以上且75%以下)
Ge:37%以上且41%以下(更优选38%以上且40%以下)
Sr:58%以上且93%以下(更优选62%以上且90%以下)
Sn:56%以上且90%以下(更优选74%以上且84%以下)
Sb:52%以上且97%以下(更优选57%以上且92%以下)
Ba:62%以上且95%以下(更优选68%以上且91%以下)
La:72%以上且89%以下(更优选74%以上且87%以下)
Ce:73%以上且93%以下(更优选75%以上且90%以下)
Al:40%以上且95%以下(更优选50%以上且85%以下)
本实施方式中,作为钎料,可使用25质量%的Cu及75质量%的Ba的组成的钎料。
由于这种钎料包含Cu及与Cu进行共晶反应的共晶元素,因此能够例如以低于Al的熔点的温度熔融。而且,以较低接合温度能够牢固地接合由Cu或Cu合金构成的Cu部件12及陶瓷部件11。
即,能够以低于Al的熔点的接合温度接合Cu部件12和陶瓷部件11。
活性金属材被设为例如含有Ti、Zr、Nb、Hf这些活性元素中的任意一种或两种以上。本实施方式中,作为活性金属材,使用Ti。
另外,优选在陶瓷部件11的另一个面11b侧进一步接合由Al或Al合金构成的Al部件的结构。作为这种Al部件的一例,可举出由4N-Al构成的Al部件。陶瓷部件11与Al部件的接合例如可使用Al-Si系钎料等。该情况下,优选含于Al-Si系钎料的Si浓度设在1质量%~12质量%的范围,但并不限定于此。
(接合体的制造方法)
图2为分步骤地表示本发明的实施方式所涉及的接合体的制造方法的剖视图。
例如,制造用作功率模块用基板的接合体时,首先准备由Si3N4(氮化硅)、AlN(氮化铝)、Al2O3(氧化铝)等陶瓷构成的陶瓷部件21(参考图2的(a))。本实施方式中,使用由AlN构成,厚度为0.635mm的陶瓷基板。
接着,在陶瓷部件21的一面21a侧,依次层叠钎料22、活性金属材23及Cu部件24,形成层叠体25(参考图2的(b):层叠工序)。钎料22由Cu及与该Cu进行共晶反应的共晶元素、即选自Ca、Ge、Sr、Sn、Sb、Ba、La、Ce、Al中的一种或两种以上的元素构成。
通过将混合Cu粉末与共晶元素粉末且经由适当的粘结剂而设为浆料状的材料(钎料浆料)涂布在陶瓷部件21的一面21a而形成钎料22。
并且,也可以将Cu与共晶元素的合金粉末经由适当的粘结剂成为浆料状的材料(钎料浆料)涂布在陶瓷部件21的一面21a。
并且,也可以将由Cu与共晶元素构成的箔状钎料配置在陶瓷部件21与活性金属材23之间。
本实施方式中,作为钎料22,将混合了Cu与Ba的质量比为25:75的60重量份的合金粉末、4重量份的丙烯树脂及作为溶剂的36重量份的TEXANOL的浆料状的钎料涂布在陶瓷部件21的一面21a。钎料22涂布成例如厚度为5~80μm左右。
活性金属材23例如被设为含有Ti、Zr、Nb、Hf这些活性元素的任意一种或两种以上。活性金属材23可使用箔、粉末、向粉末加入适当的粘结剂并混匀的浆料来设置。并且,以浆料方式使用时,也能够使用活性元素的氢化物(例如,TiH2或ZrH2等)。而且,可通过在Cu部件24和陶瓷部件21蒸镀来设置。活性金属材23的厚度被设为0.05μm以上且25μm以下。
另外,优选活性金属材23的厚度较薄的情况下利用蒸镀来形成,在比较厚的情况下使用箔或浆料来形成。
本实施方式中,作为活性金属材,通过在Cu部件24蒸镀Ti来形成。
另外,如图2所示,本实施方式中,活性金属材23配置于Cu部件24的一侧,但也可配置于陶瓷部件21的一侧。该情况下,层叠体25的层叠顺序成为陶瓷部件21、活性金属材23、钎料22及Cu部件24的顺序。
接着,如图2的(c)所示,例如将层叠体25放入至真空加热处理炉H,加压层叠体25,且加热直到成为钎料22的熔融温度(接合温度)以上(加热处理工序)。由此,钎料22熔融。之后,若冷却,如图2的(d)所示,可获得陶瓷部件21与Cu部件24接合的接合体26。
在此,对本发明的实施方式中的钎料22进行进一步叙述。作为与Cu进行共晶反应的共晶元素,通过使选自Ca、Ge、Sr、Sn、Sb、Ba、La、Ce、Al中的一种或两种以上的元素含于钎料22,并利用与Cu的共晶反应,能够可靠地降低钎料的熔点。
作为一例,共晶元素中,通过在68质量%以上且92质量%以下的范围内,向Cu加入Ba,与仅为Cu的情况进行比较,能够将熔点降低至530℃。
并且,共晶元素中,通过选择两种以上,能够抑制钎料22的熔点的上升,并且抑制钎料22的流动性的降低,并能够进一步提高陶瓷部件21与Cu部件24的接合性。
本实施方式中的加热处理工序中,加热温度被设定在600℃以上且650℃以下的范围内。加热温度为600℃以上时,在陶瓷部件21与Cu部件24的接合界面中,能够使钎料22可靠地熔融,且能够可靠地接合陶瓷部件21与Cu部件24。
另一方面,加热温度为650℃以下时,能够抑制陶瓷部件21的热劣化,且能够减少陶瓷部件21中产生的热应力。
并且,在加热处理工序中,当施加于层叠体25的压力为1kgf/cm2(0.10MPa)以上时,能够使陶瓷部件21与已熔融的钎料22的液相紧贴,因此能够牢固地接合陶瓷部件21与Cu部件24。并且,当施加的压力为35kgf/cm2(3.43MPa)以下时,能够抑制在陶瓷部件21中因应力而产生的破裂。出于这种理由,在本实施方式中,施加于层叠体25的压力被设定在1kgf/cm2以上且35kgf/cm2以下(0.10MPa以上且3.43MPa以下)的范围内。
而且,加热处理工序中,当加热时间为30分钟以上时,在陶瓷部件21与Cu部件24的接合界面,已熔融的钎料22进入陶瓷部件21或Cu部件24的表层,且能够可靠地接合陶瓷部件21与Cu部件24。另外,若加热时间超过360分钟,则生产率降低。出于这种理由,本实施方式中,加热时间被设定在30分钟以上且360分钟以下的范围内。
(功率模块用基板的制造方法)
图3、图4为分步骤地表示作为本发明的实施方式的功率模块用基板的制造方法的剖视图。
如图3的(a)所示,制造功率模块用基板时,首先准备由陶瓷构成的陶瓷基板31。而且,在该陶瓷基板31的一面31a侧依次层叠钎料32、活性金属材33、及Cu板34。并且,陶瓷基板31的另一面31b侧,依次层叠钎料35及Al板36来形成层叠体37(层叠工序)。
作为构成陶瓷基板31的陶瓷,例如可举出Si3N4(氮化硅)、AlN(氮化铝)、Al2O3(氧化铝)等。本实施方式中,使用由AlN构成,且厚度为0.635mm的陶瓷基板。
钎料32由Cu及与该Cu进行共晶反应的共晶元素、即选自Ca、Ge、Sr、Sn、Sb、Ba、La、Ce、Al中的一种或两种以上的元素构成。
本实施方式中,作为钎料32,使用与上述钎料22相同的钎料。
活性金属材33例如被设为含有Ti、Zr、Nb、Hf这些活性元素的任意一种或两种以上。活性金属材33可使用箔、粉末、向粉末加入适当的粘结剂并混匀的浆料来设置。并且,以浆料方式使用时,能够使用活性元素的氢化物(例如,TiH2或ZrH2等)。而且,也可通过在Cu板34和陶瓷基板31进行蒸镀来设置。活性金属材33的厚度被设为0.05μm以上且25μm以下。
另外,优选活性金属材33的厚度较薄的情况下利用蒸镀来形成,在比较厚的情况下使用箔或浆料来形成。
本实施方式中,通过在Cu板34蒸镀Ti来形成活性金属材。
另外,如图3所示,本实施方式中,活性金属材33配置于Cu板34的一侧,但也可配置于陶瓷基板31的一侧。该情况下,层叠体37的层叠顺序成为陶瓷基板31、活性金属材33、钎料32及Cu板34的顺序。
活性金属材33也可以与钎料32混合一部分或全部的状态下,配置于陶瓷基板31与Cu板34之间。
Al板36由Al或Al合金构成。本实施方式中可使用4N-Al。并且,作为钎料35,使用能够接合陶瓷与Al,并且,以低于与钎料32相同的程度的温度下熔融的钎料,例如Al-Si系钎料。该情况下,优选含于Al-Si钎料的Si浓度被设在1质量%~12质量%的范围。
接着,如图3的(b)所示,例如将层叠体37放入至真空加热处理炉H,施加规定的压力,且加热直到成为钎料32、35的熔融温度(接合温度)以上(加热处理工序)。由此,钎料32、35熔融。之后,若冷却,如图4的(a)所示,可获得在陶瓷基板31的一面31a侧接合Cu板34,并且在陶瓷基板31的另一面31b侧接合Al板36的功率模块用基板39。
如此,作为钎料32,通过使用Cu及与该Cu进行共晶反应的共晶元素,与Al的熔点相比以足够低的温度熔融钎料32,且能够接合陶瓷基板31与Cu板34。由此,即使将熔点较低的Al板36接合在陶瓷基板31的另一面31b侧的情况下,也能够在1次加热处理工序中对陶瓷基板31同时接合Cu板34与Al板36。
如图4的(b)所示,使用功率模块用基板39,经由焊锡层41在Cu板34接合半导体元件42,由此制造功率模块40。该情况下,Cu板34作为构成功率模块40的配线图案的电路层来发挥作用。并且,Al板36作为功率模块40的金属层例如散热板来发挥作用。
另外,上述功率模块40中,将Cu板34作为电路层,但并不需要Cu板34一定是电路层。例如,能够将Cu板接合在与功率模块的电路层的相反侧的面而作为金属层。
并且,在功率模块40的Al板36(图4中为下侧)配置有散热片,从而也能够用作带散热片的功率模块。
散热片用于冷却功率模块40,且具备与功率模块40接合的顶板部、与用于流通冷却介质(例如冷却水)的流路。优选散热片由导热性良好的材质构成,例如能够由无氧铜等纯铜、铜合金、纯铝或A6063(铝合金)等铝合金构成。在功率模块40的Al板36,例如通过焊接和钎焊来接合散热片(顶板部)。
实施例
以下,对为确认本发明所涉及的实施方式的效果而进行的确认实验(实施例)的结果进行说明。
(实施例1)
由AlN构成的陶瓷基板(40mm×40mm×厚度0.635mm)的一个面,依次层叠表1中记载的钎料、活性金属材(厚度6μm的箔)及由无氧铜构成的Cu板(37mm×37mm×厚度0.3mm)。
并且,比较例1中,作为钎料,使用了对Cu不发生共晶反应的元素(Ni)。比较例2中,被设为在陶瓷基板与Cu板之间夹着Cu箔的结构。
而且,关于各个本发明例、比较例,以15kgf/cm2(1.47MPa)的压力沿着层叠方向对层叠体进行加压的状态下,装入真空加热炉内并进行加热,从而在陶瓷基板的一个面接合Cu板。另外,将真空加热炉内的压力设定在10-3Pa,将加热温度及加热时间设定在表1的条件。如此获得本发明例1-1~1-42、比较例1~2的接合体。
针对如上述获得的本发明例1-1~1-42、比较例1~2的接合体,对Cu板与陶瓷基板的初始的接合率进行评价。
关于接合率的评价,对接合体,对陶瓷基板与Cu板的表面的接合率使用超声波探伤装置(Hitachi Power Solutions co.,Ltd制FineSAT200),进行评价,并由以下公式计算接合率。
在此,初始接合面积是指接合前的应接合的面积,本实施例中设为Cu板的面积(37mm×37mm)。在将超声波探伤影像二值化处理的图像中,剥离以接合部内的白色部分表示,因此将该白色部分的面积设为剥离面积。
(接合率(%))={(初始接合面积)-(剥离面积)}/(初始接合面积)×100
将如上确认试验的结果示于表1。
[表1]
由表1所示的结果可确认到,关于本发明例1-1~1-42,夹着包含Cu及与该Cu进行共晶反应的共晶元素的钎料来接合陶瓷基板与Cu板,因此陶瓷基板与Cu板的初始接合率高,且牢固地接合。
另一方面,陶瓷基板与Cu板接合时,在使用Cu及不与该Cu形成共晶合金的元素来接合的比较例1或不使用形成共晶合金的元素的比较例2中,未接合陶瓷基板与Cu板。
(实施例2)
在表2中记载的陶瓷基板(40mm×40mm×厚度0.635mm)的一个面,依次层叠表2中记载的钎料、活性金属材(厚度1μm的箔)、及由无氧铜构成的Cu板(37mm×37mm×厚度0.3mm)。而且,在陶瓷基板的另一个面经由Al-10质量%Si钎料箔(厚度20μm)而层叠纯度99.99%以上的铝板(37mm×37mm×厚度0.6mm),并制作层叠体。
而且,以15kgf/cm2(1.47MPa)的压力沿着层叠方向对层叠体进行加压的状态下,装入真空加热炉内并进行加热,从而在陶瓷基板的一个面接合Cu板,在另一个面接合铝板。另外,将真空加热炉内的压力设定在10-3Pa,将加热温度及加热时间设定在表2的条件。如此获得本发明例2-1~2-15的功率模块用基板。
针对所获得的功率模块用基板中的陶瓷基板与Cu板的初始接合率及冷热循环试验后的接合率进行了评价。冷热循环试验使用冷热冲击试验机(Espec公司制TSB-51),对功率模块用基板,以液相(电子氟化液),将在-40℃下5分钟与125℃下5分钟的循环设为1个循环,实施了3000个循环。
以与实施例1相同的方法计算接合率。
将以上结果示于表2。
夹着包含Cu及与该Cu进行共晶反应的共晶元素的钎料来接合陶瓷基板与Cu板的本发明例2-1~2-15中,可确认到能够获得初始接合率高,且负载冷热循环之后也能够维持高接合率的功率模块用基板。
产业上的可利用性
根据本发明所涉及的接合体的制造方法、功率模块用基板的制造方法,能够良好地接合陶瓷部件与Cu部件。因此,根据本发明所涉及的接合体的制造方法、功率模块用基板的制造方法,能够制造适合于为了控制风力发电、电动汽车等电动车辆等而使用的大功率控制用的功率半导体元件之类的使用环境严酷的功率模块的接合体及功率模块用基板。
符号说明
10-接合体,11-陶瓷部件,12-Cu部件,21-陶瓷部件,22-钎料,23-活性金属材,24-Cu部件,26-接合体,39-功率模块用基板。
Claims (6)
1.一种接合体的制造方法,其为接合由陶瓷构成的陶瓷部件与由Cu或Cu合金构成的Cu部件而成的接合体的制造方法,所述接合体的制造方法具备:
层叠工序,经由钎料和活性金属材在所述陶瓷部件的一面侧层叠所述Cu部件,所述钎料包含Cu及与该Cu进行共晶反应的共晶元素;及
加热处理工序,对层叠的所述陶瓷部件及所述Cu部件进行加热处理。
2.根据权利要求1所述的接合体的制造方法,其中,
在所述层叠工序中,在所述陶瓷部件侧配置所述钎料,在所述Cu部件侧配置所述活性金属材。
3.根据权利要求1或2所述的接合体的制造方法,其中,
所述共晶元素为选自Ca、Ge、Sr、Sn、Sb、Ba、La、Ce及Al中的一种或两种以上的元素。
4.根据权利要求1至3中任一项所述的接合体的制造方法,其中,
在所述层叠工序中,进一步在所述陶瓷部件的另一面侧层叠由Al或Al合金构成的Al部件,
在所述加热处理工序中,对层叠的所述陶瓷部件、所述Cu部件及所述Al部件进行加热处理。
5.根据权利要求1至4中任一项所述的接合体的制造方法,其中,
所述陶瓷部件由Si3N4、AlN和Al2O3中的任一种构成。
6.一种功率模块用基板的制造方法,其为在陶瓷基板的一个面配设有由Cu或Cu合金构成的Cu板的功率模块用基板的制造方法,其中,
通过权利要求1至5中任一项所述的接合体的制造方法来接合所述陶瓷基板与所述Cu板。
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WO2020044594A1 (ja) * | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、絶縁回路基板、及び、銅/セラミックス接合体の製造方法、及び、絶縁回路基板の製造方法 |
JP6703584B2 (ja) * | 2018-11-01 | 2020-06-03 | 國家中山科學研究院 | セラミックス搭載板と厚膜回路の接着力を高める方法 |
DE102019126954A1 (de) | 2019-10-08 | 2021-04-08 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren |
DE102019135099A1 (de) * | 2019-12-19 | 2021-06-24 | Rogers Germany Gmbh | Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren |
JP2024047329A (ja) * | 2022-09-26 | 2024-04-05 | 日本発條株式会社 | 接合用ろう材および接合体 |
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