TWI642645B - 接合體之製造方法、功率模組用基板之製造方法 - Google Patents

接合體之製造方法、功率模組用基板之製造方法 Download PDF

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TWI642645B
TWI642645B TW104112861A TW104112861A TWI642645B TW I642645 B TWI642645 B TW I642645B TW 104112861 A TW104112861 A TW 104112861A TW 104112861 A TW104112861 A TW 104112861A TW I642645 B TWI642645 B TW I642645B
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ceramic
brazing filler
filler metal
bonded
eutectic
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TW201605766A (zh
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寺伸幸
長友義幸
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日商三菱綜合材料股份有限公司
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Abstract

本發明係一種接合體之製造方法,功率模組用基板之製造方法,其中,本發明之接合體之製造方法係加以接合由陶瓷所成之陶瓷構件,和Cu或Cu合金所成之Cu構件所成之接合體之製造方法,其中,具備:藉由包含Cu及與Cu共晶反應之共晶元素之硬焊填料金屬,和活性金屬材,於前述陶瓷構件之一面側,層積前述Cu構件之層積工程,和加熱處理所層積之前述陶瓷構件及前述Cu構件之加熱處理工程。

Description

接合體之製造方法、功率模組用基板之製造方法
本發明係有關堅固地接合陶瓷構件與Cu構件之接合體之製造方法,及使用其接合體之製造方法的功率模組用基板之製造方法。
本申請係依據於2014年4月25日,於日本所提出申請之日本特願2014-091955號而主張優先權,將此內容援用於此。
LED或功率模組等之半導體裝置係具備:於導電材料所成之電路層上,加以接合半導體元件的構造。
風力發電,電動汽車等之電性車輛等,為了控制大電力所使用之功率半導體元件係發熱量為多。因此,作為搭載如此之功率半導體元件的基板,係例如,加以使用Si3N4(氮化矽素)、AlN(氮化鋁)、Al2O3(氧化鋁)等,對於耐熱性,及絕緣性優越之陶瓷基板。並且,於此陶瓷基板之一方的面,將導電性優越之金屬板作為電路層而接合之 功率模組用基板,則自以往被廣泛加以使用。另外,對於陶瓷基板之另一方的面,亦有接合其他的金屬板者。
例如,專利文獻1所示之功率模組用基板係具備:於陶瓷基板(陶瓷構件)之一方的面,由接合Cu板(Cu構件)者而加以形成電路層之構造。此功率模組用基板係於陶瓷基板之一方的面,在使Cu-Mg-Ti硬焊填料金屬介入存在而配置Cu板之狀態,經由進行加熱處理而加以接合Cu板。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利第4375730號公報
如專利文獻1所揭示地,藉由Cu-Mg-Ti硬焊填料金屬而接合陶瓷基板與Cu板,形成電路層時,對於陶瓷基板與硬焊填料金屬之接合界面,係加厚加以形成包含Cu、Mg、或Ti之金屬間化合物層。
加以形成於陶瓷基板與硬焊填料金屬之接合界面之金屬間化合物層係為堅硬之故,冷熱循環被加以負荷之情況,有著陶瓷基板與電路層之接合信賴性降低之虞。
此發明係有鑑於前述之情事所作為之構成, 其目的為提供:可良好地接合陶瓷構件與Cu構件者,接合信賴性高之接合體的製造方法,及使用此接合體之製造方法的功率模組用基板之製造方法者。
為了解決上述課題,有關本發明之第一形態之接合體的製造方法係加以接合由陶瓷所成之陶瓷構件,和Cu或Cu合金所成之Cu構件而成之接合體的製造方法,其中,具備:藉由包含Cu及與該Cu共晶反應之共晶元素的硬焊填料金屬,和活性金屬材,於層積前述陶瓷構件之一面側,層積前述Cu構件之層積工程,和加熱處理所層積之前述陶瓷構件及前述Cu構件之加熱處理工程。
如根據如此之接合體之製造方法,對於接合陶瓷構件與Cu構件時,經由藉由包含Cu及與該Cu共晶反應之共晶元素的硬焊填料金屬,和活性金屬材而接合之時,成為可以低接合溫度,且高接合強度而接合陶瓷構件及Cu構件者之同時,可得到接合信賴性高的接合體者。
在前述層積工程中,於前述陶瓷構件側配置前述硬焊填料金屬,而於前述Cu構件側,配置前述活性金屬材。
在此構成中,在前述加熱工程中熔融之硬焊填料金屬則成為與陶瓷構件確實地接觸者,可良好地接合陶瓷構件與Cu構件者。
前述共晶元素係選自Ca,Ge,Sr,Sn,Sb, Ba,La,Ce,Al之中之1種或2種以上的元素。
經由採用此等之共晶元素之時,對於Cu而言使其加以共晶反應,成為可使硬焊填料金屬之熔融溫度大大下降者。隨之,成為可以低的溫度而接合陶瓷構件與Cu構件者。
在前述層積工程中,於前述陶瓷構件的另一面側,更層積由Al或Al合金所成之Al構件,而在前述加熱處理工程中,加熱處理所層積之前述陶瓷構件,前述Cu構件,及前述Al構件。
如使用Cu,與該Cu共晶反應之元素所成的硬焊填料金屬,可以較Al之熔點為低之溫度而熔融硬焊填料金屬者,而成為可以一工程而進行接合Cu構件於陶瓷構件之一方的面之工程,與接合Al構件於另一方的面之工程者。
前述陶瓷構件係由Si3N4、AlN、Al2O3之中之任一加以構成。
作為陶瓷構件而由選擇Si3N4、AlN、Al2O3者,可製造對於絕緣性,及散熱性優越之接合體者。
有關本發明之第二形態之功率模組用基板之製造方法,係於陶瓷基板之一方的面,加以配設Cu或Cu合金所成之Cu板之功率模組用基板之製造方法,其中,經由前述各項記載之接合體的製造方法而接合前述陶瓷基板與前述Cu板。
如根據有關本發明之第二形態之功率模組用 基板之製造方法,經由於陶瓷基板與Cu板之間,藉由Cu,和與該Cu共晶反應之共晶元素所成的硬焊填料金屬,和活性金屬材而接合之時,成為可以低接合溫度,且高接合強度而接合陶瓷基板及Cu板者之同時,可得到接合信賴性高的功率模組用基板者。
然而,加以接合於陶瓷基板之Cu板係成為電路層,或者加以形成於與接合在陶瓷基板之電路層的面相反的面之金屬層。
如根據本發明之接合體的製造方法,功率模組用基板之製造方法,成為可良好地接合陶瓷構件與Cu構件者。
10‧‧‧接合體
11‧‧‧陶瓷構件
12‧‧‧Cu構件
21‧‧‧陶瓷構件
21a‧‧‧陶瓷構件之一面
22‧‧‧硬焊填料金屬
23‧‧‧活性金屬材
24‧‧‧Cu構件
26‧‧‧接合體
39‧‧‧功率模組用基板
圖1係顯示有關本發明之實施形態的接合體之一例的剖面圖。
圖2係階段性地顯示有關本發明之實施形態的接合體之製造方法的剖面圖。
圖3係階段性地顯示有關本發明之實施形態的功率模組用基板之製造方法的剖面圖。
圖4係階段性地顯示有關本發明之實施形態的功率模組用基板之製造方法的剖面圖。
以下,參照圖面,對於本發明之接合體的製造方法,功率模組用基板之製造方法加以說明。然而,以下所示之各實施形態係為了使發明的內容更理解而具體說明之構成,只要未特別指定,並非限定本發明者。另外,在以下的說明所使用之圖面係為了容易了解本發明之特徵,在方便上,有著擴大顯示成為要部的部分情況,而各構成要素的尺寸比率等則不限於與實際相同。
(接合體)
圖1係顯示經由有關本發明之實施形態的接合體的製造方法所得到之接合體之一例的剖面圖。
接合體10係如圖1所示,由陶瓷構件11,和加以配設於此陶瓷構件11之一方的面11a(在圖1中為上面)側,藉由硬焊填料金屬而加以接合之Cu構件12所成。
陶瓷構件11係以對於絕緣性,及散熱性優越之Si3N4(氮化矽素)、AlN(氮化鋁)、Al2O3(氧化鋁)等之陶瓷所構成。在本實施形態中,陶瓷構件11係特別以散熱性優越之、AlN(氮化鋁)所構成。另外,陶瓷構件11之厚度係例如,加以設定為0.2~1.5mm之範圍內,而在本實施形態中係加以設定為0.635mm。
Cu構件12係由Cu或Cu合金加以構成。在本實施形態中,Cu構件係由無氧銅加以構成,厚度係例如,厚度係加以設定為0.1mm以上1.0mm以下之範圍 內,而在本實施形態中係加以設定為0.6mm。
Cu構件12係於陶瓷構件11之一方的面11a,經由硬焊填料金屬及活性金屬材而加以接合。
硬焊填料金屬係由Cu,和與此Cu共晶反應之共晶元素所成。使用於硬焊填料金屬之共晶元素係例如,自經由與Cu之共晶反應而形成具有較Al為低熔點之合金的元素加以選擇。作為與Cu共晶反應之元素係可舉出Ca,Ge,Sr,Sn,Sb,Ba,La,Ce,Al(以下,此等元素係稱做共晶元素)。並且,選自此等共晶元素之中之1種或2種以上的元素則加以含有於硬焊填料金屬。
含有於硬焊填料金屬之共晶元素係可作為下記的範圍內(mass%)者。
Ca:32%以上78%以下(更期望為34%以上75%以下)
Ge:37%以上41%以下(更期望為38%以上40%以下)
Sr:58%以上93%以下(更期望為62%以上90%以下)
Sn:56%以上90%以下(更期望為74%以上84%以下)
Sb:52%以上97%以下(更期望為57%以上92%以下)
Ba:62%以上95%以下(更期望為68%以上91%以下)
La:72%以上89%以下(更期望為74%以上87%以下)
Ce:73%以上93%以下(更期望為75%以上90%以下)
Al:40%以上95%以下(更期望為50%以上85%以下)
在本實施形態中,作為硬焊填料金屬,使用Cu25mass%、Ba75mass%之組成的硬焊填料金屬。
如此之硬焊填料金屬係包含Cu及與Cu共晶 反應之共晶元素之故,例如,可以較Al的熔點為低之溫度熔融者。並且,可以低接合溫度而堅固地接合Cu或Cu合金所成之Cu構件12,和陶瓷構件11者。
即,可以較Al的熔點為低之接合溫度而接合Cu構件12與陶瓷構件11者。
活性金屬材係例如,作為含有Ti、Zr、Nb、Hf之活性元素之任1種或2種以上之構成。在本實施形態中,作為活性金屬材而使用Ti。
然而,於陶瓷構件11之另一方的面11b側,更加以接合Al或Al合金所成之Al構件的構成者亦佳。作為如此做成之Al構件的一例,可舉出4N-Al所成之Al構件。陶瓷構件11與Al構件之接合係例如,可使用Al-Si系硬焊填料金屬等者。此情況,含於Al-Si系硬焊填料金屬之Si濃度係作為1mass%~12mass%之範圍者為佳,但並不限定於此者。
(接合體之製造方法)
圖2係階段性地顯示有關本發明之實施形態的接合體之製造方法的剖面圖。
例如,對於製造作為功率模組用基板所使用之接合體時,首先,準備Si3N4(氮化矽素)、AlN(氮化鋁)、Al2O3(氧化鋁)等之陶瓷所成之陶瓷構件21(參照圖2(a))。在本實施形態中,使用AlN所成,厚度為0.635mm之陶瓷基板。
接著,於陶瓷構件21之一面21a側,依序層積硬焊填料金屬22,活性金屬材23及Cu構件24,而形成層積體25(參照圖2(b):層積工程)。硬焊填料金屬22係由Cu,和與此Cu共晶反應之共晶元素,即,選自Ca,Ge,Sr,Sn,Sb,Ba,La,Ce,Al之中1種或2種以上的元素加以構成。
硬焊填料金屬22係混合Cu粉末,和共晶元素粉末,將藉由適當的黏合劑而做成電糊狀之構成(硬焊填料金屬電糊),經由塗佈於陶瓷構件21之一面21a而加以形成。
另外,將Cu與共晶元素之合金粉末,藉由適當的黏合劑而做成電糊狀之構成(硬焊填料金屬電糊),塗佈於陶瓷構件21之一面21a者亦可。
另外,將Cu與共晶元素所成之箔狀的硬焊填料金屬,配置於陶瓷構件21與活性金屬材23之間亦可。
在本實施形態中,作為硬焊填料金屬22,將Cu與Ba之質量比為25:75之合金粉末作為60重量分與丙烯酸樹脂4重量分與作為溶劑之成膜助劑,與36重量分混合之電弧狀之硬焊填料金屬,塗佈於陶瓷構件21之一面21a。硬焊填料金屬22係例如,厚度則呈成為5~80μm程度地加以塗佈。
活性金屬材23係例如,作為含有Ti、Zr、Nb、Hf之活性元素之任1種或2種以上之構成者。活性金屬材23係可使用箔,粉末,加上適當的黏合劑於粉末 而混練之電糊而設置者。另外,對於作為電糊而使用之情況,係亦可使用活性元素之氫化物(例如,TiH2或ZrH2等)者。更且,亦可由蒸鍍於Cu構件24或陶瓷構件21者而設置。活性金屬材23之厚度係作為0.05μm以上25μm以下。
然而,對於活性金屬材23之厚度為薄之情況,係使用蒸鍍,而對於比較厚的情況係使用箔,或電糊形成者為佳。
在本實施形態中,作為活性金屬材,由蒸鍍Ti於Cu構件24者而加以形成。
然而,在本實施形態中,活性金屬材23係如圖2所示,配置於Cu構件24側,但亦可配置於陶瓷構件21側者。此情況,層積體25之層積順序係成為陶瓷構件21,活性金屬材23,硬焊填料金屬22,及Cu構件24之順序。
接著,如圖2(c)所示,將層積體25,例如放入至真空加熱處理爐H,加壓層積體25之同時,成為至硬焊填料金屬22之熔融溫度(接合溫度)以上為止進行加熱(加熱處理工程)。經由此,硬焊填料金屬22則熔融。之後,加以冷卻時,如圖2(d)所示,得到加以接合陶瓷構件21與Cu構件24之接合體26。
在此,對於在本發明之實施形態之硬焊填料金屬22更加以敘述。作為與Cu共晶反應之共晶元素係經由使選自Ca,Ge,Sr,Sn,Sb,Ba,La,Ce,Al之中1 種或2種以上的元素,含有於硬焊填料金屬22之時,經由與Cu之共晶反應,可確實地降低硬焊填料金屬之熔點者。
作為一例,共晶元素之中,經由將Ba在68mass%以上92mass%以下的範圍內,加上於Cu之時,與僅Cu之情況做比較,可使熔點降低為530℃者。
另外,經由共晶元素之中,選擇2種以上之時,可亦至硬焊填料金屬22之熔點上升,且抑制硬焊填料金屬22之流動性降低者,而更可使陶瓷構件21與Cu構件24之接合性提升者。
在本實施形態之加熱處理工程中,加熱溫度係加以設定為600℃以上650℃以下之範圍內。加熱溫度為600℃以上之情況,在陶瓷構件21與Cu構件24之接合界面中,可確實地使硬焊填料金屬22熔融,而成為可確實地接合陶瓷構件21與Cu構件24。
另一方面,加熱溫度為650℃以下之情況,可抑制陶瓷構件21產生熱劣化之情況同時,可降低產生於陶瓷構件21之熱應力者。
另外,在加熱處理工程中,係加上於層積體24之壓力為1kgf/cm2(0.10MPa)以上之情況,可使陶瓷構件21,和熔融之硬焊填料金屬22之液相密著者,可堅固地接合陶瓷構件21與Cu構件24。另外,所加上之壓力為35kgf/cm2(3.43MPa)以下的情況,可抑制對於陶瓷構件21,產生經由應力之斷裂者。如此的理由之故,在本實施 形態中,加上於層積體24之壓力係加以設定為1kgf/cm2以上35kgf/cm2以下(0.10MPa以上3.43MPa以下)之範圍內。
更且,在加熱處理工程中,加熱時間為30分鐘以上之情況,在陶瓷構件21與Cu構件24之接合界面中,熔融的硬焊填料金屬22則進入至陶瓷構件21或Cu構件24的表層,可確實地接合陶瓷構件21與Cu構件24者。然而,當加熱時間超過360分鐘時,生產性則下降。如此理由之故,在本實施形態中,加熱時間係加以設定為30分鐘以上360分鐘以下的範圍內。
(功率模組用基板之製造方法)
圖3,圖4係階段性地顯示本發明之實施形態的功率模組用基板之製造方法的剖面圖。
如圖3(a)所示,對於在製造功率模組用基板時,首先,準備陶瓷所成之陶瓷基板31。並且,於此陶瓷基板31之一面31a側,依序層積硬焊填料金屬32,活性金屬材33,及Cu板34。另外,於陶瓷構件31之另一面31b側,依序層積硬焊填料金屬35,及Al板36,形成層積體37(層積工程)。
作為構成陶瓷基板31之陶瓷係例如,可舉出Si3N4(氮化矽素)、AlN(氮化鋁)、Al2O3(氧化鋁)等。在本實施形態中,使用AlN所成,厚度為0.635mm之陶瓷基板。
硬焊填料金屬32係由Cu,和與此Cu共晶反應之共晶元素,即,選自Ca,Ge,Sr,Sn,Sb,Ba,La,Ce,Al之中1種或2種以上的元素加以構成。
在本實施形態中,作為硬焊填料金屬32,而使用與上述硬焊填料金屬22相同之硬焊填料金屬32。
活性金屬材33係例如,作為含有Ti、Zr、Nb、Hf之活性元素之任1種或2種以上。活性金屬材33係可使用箔,粉末,加上適當的黏合劑於粉末而混練之電糊而設置者。另外,對於作為電糊而使用之情況,係亦可使用活性元素之氫化物(例如,TiH2或ZrH2等)者。更且,亦可由蒸鍍於Cu板34或陶瓷基板31者而設置。活性金屬材23之厚度係作為0.05μm以上25μm以下。
然而,對於活性金屬材33之厚度為薄之情況,係使用蒸鍍,而對於比較厚的情況係使用箔,或電糊形成者為佳。
在本實施形態中,作為活性金屬材,由蒸鍍Ti於Cu板34者而加以形成。
然而,在本實施形態中,活性金屬材33係如圖3所示,配置於Cu板34側,但亦可配置於陶瓷基板31側者。此情況,層積體37之層積順序係成為陶瓷基板31,活性金屬材33,硬焊填料金屬32,及Cu板34之順序。
另外,活性金屬材33係在與硬焊填料金屬32一部分或全部加以混合之狀態,配置於陶瓷基板31與Cu板34 之間亦可。
Al板36係從Al或Al合金加以構成。在本實施形態中,使用4N-Al。另外,作為硬焊填料金屬35,係使用陶瓷與Al之接合可能,且與硬焊填料金屬32同程度,較此為低溫進行熔融之硬焊填料金屬,例如Al-Si系硬焊填料金屬。此情況,含於Al-Si系硬焊填料金屬之Si濃度係作為1mass%~12mass%之範圍者為佳。
接著,如圖3(b)所示,將層積體37,例如放入至真空加熱處理爐H,加上特定壓力之同時,成為至硬焊填料金屬32,35之熔融溫度(接合溫度)以上為止進行加熱(加熱處理工程)。經由此,硬焊填料金屬32,35則熔融。之後,當加以冷卻時,如圖4(a)所示,得到於各陶瓷基板31之一面31a側加以接合Cu板34,但另外陶瓷基板31之另一面31b側加以接合Al板36之功率模組用基板39。
如此,作為硬焊填料金屬32,經由使用Cu,和與此Cu共晶反應之共晶元素之時,以較Al的熔點充分為低之溫度熔融硬焊填料金屬32,可接合陶瓷基板31與Cu板34者。經由此,在將比較熔點低之Al板36接合於陶瓷基板31之另一面31b側之情況,可將Cu板34與Al板36,對於陶瓷基板31而言,以1次的加熱處理工程同時進行接合者。
如圖4(b)所示,使用功率模組用基板39,經由於Cu板33,藉由焊錫層41而接合半導體元件42之 時,可製造功率模組40者。此情況,Cu板34係作為構成功率模組40之配線圖案之電路層而發揮作用。另外,Al板36係作為功率模組40之金屬層,例如散熱板而發揮作用。
然而,在上述功率模組40中,將Cu板34作為電路層,但Cu板34係未必須要電路層。例如,亦可將Cu板接合於與功率模組之電路層相反側的面,而作為金屬層者。
另外,於功率模組40之Al板36(在圖4中下側)加以配置散熱板,亦可作為附散熱板功率模組而利用。
散熱板係為了冷卻功率模組40之構成,具備與功率模組40加以接合之天板部與為了流通冷卻媒體(例如冷卻水)的流路。散熱板係由熱傳導性良好的材質加以構成者為佳,例如,可由無氧銅等之純銅或銅合金或純鋁或A6063(鋁合金)等之鋁合金而構成。散熱板(天板部)係於功率模組40之Al板36,例如,經由附焊錫或附硬焊填料而加以接合。
[實施例]
以下,對於欲確認有關本發明之實施形態之效果而進行之確認試驗(實施例)之結果,加以說明。
(實施例1)
於AlN所成之陶瓷基板(40mm×40mm×厚度0.635mm)之一方的面,依序層積表1記載之硬焊填料金屬,活性金屬材(厚度6μm的箔)、無氧銅所成之Cu板(37mm×37mm×厚度0.3mm)。
另外,比較例1係作為硬焊填料金屬,使用對於Cu而言未引起共晶反應之元素(Ni)。比較例2係做成於陶瓷基板與Cu板之間,介入存在Cu箔之構成。
並且,對於各本發明側,比較例,將層積體,在以壓力15kgf/cm2(1.47MPa)加壓於層積方向之狀態而投入至真空加熱爐,經由進行加熱而接合Cu板於陶瓷基板之一方的面。然而,真空加熱爐內之壓力係設定為10-3Pa,而加熱溫度及加熱時間係設定為表1條件。如此作為,得到本發明例1-1~1-42、比較例1~2之接合體。
對於如上述作為所得到之本發明例1-1~1-42、比較例1~2之接合體而言,評估Cu板與陶瓷基板之初期的接合率。
接合率評估係對於接合體而言,對於陶瓷基板與Cu板之界面的接合率,使用超音波探傷裝置(股份有限公司日本日立Power Solutions製FineSAT200)加以評估,從以下式算出接合率。
在此,初期接合面積係在接合前之欲接合之面積,在本實施例中,係做成Cu板的面積(37mm×37mm)。在將超音波探傷像作為二值化處理之畫像中,剝離係自以接合部內之白色部所顯示之情況,將此白色部的面積做成剝離面 積。
(接合率(%))={(初期接合面積)-(剝離面積)}/(初期接合面積)×100
將如以上的確認實驗結果示於表1。
從表1所示之結果,對於本發明例1-1~1-42係使包含Cu,和與此Cu共晶反應之共晶元素之硬焊填料金屬介入存在而接合陶瓷基板與Cu板之故,陶瓷基板與 Cu板之初期的接合率為高,確認到堅固地加以接合。
另一方面,陶瓷基板與Cu板之接合時,在使用Cu,和未形成與此Cu共晶結合之元素而接合之比較例1或未使用形成共晶合金之元素的比較例2中,陶瓷基板與Cu板則未被接合。
(實施例2)
表2記載之陶瓷基板(40mm×40mm×厚度0.635mm)之一方的面,依序層積表2記載之硬焊填料金屬,活性金屬材(厚度1μm的箔)、無氧銅所成之Cu板(37mm×37mm×厚度0.3mm)。並且,於陶瓷基板之另一方的面,藉由Al-10質量%Si硬焊填料金屬箔(厚度20μm)而層積純度99.99%以上之鋁板(37mm×37mm×厚度0.6mm),而製作層積體。
並且,將層積體,在以壓力15kgf/cm2(1.47MPa)加壓於層積方向之狀態而投入至真空加熱爐,經由進行加熱而接合Cu板於陶瓷基板之一方的面,而於另一方的面,接合鋁板。然而,真空加熱爐內之壓力係設定為10-3Pa,而加熱溫度及加熱時間係設定為表2條件。如此作為,得到本發明例2-1~2-15之功率模組用基板。
評估所得到之在功率模組用基板之陶瓷基板與Cu板的初期之接合率及冷熱循環試驗後之接合率。冷熱循環試驗係使用冷熱衝擊試驗機(日本ESPEC股份有限公司製TSB-51),對於功率模組用基板而言,以液相(Fluorinert(氟化液)),將由-40℃ 5分與由125℃ 5分之循 環作為1循環,實施3000循環。
接合率係以和實施例1同樣的方法而算出。
將以上的結果示於表2。
在使包含Cu,和與此Cu共晶反應之共晶元素之硬焊填料金屬介入存在,而接合陶瓷基板與Cu板之本發明例2-1~2-15中,確認到可得到初期之接合率為高,而冷熱循環被加以負荷之後,亦可維持高接合率之功率模組用基板者。
[產業上之利用可能性]
如根據有關本發明之接合體之製造方法,功率模組用基板之製造方法,成為可良好地接合陶瓷構件與Cu構件者。因此,如根據有關本發明之接合體之製造方法,功率模組用基板之製造方法,可製造使合於為了控制風力發電,電動汽車等之電性車輛等所使用之大電力控制用的功率半導體元件之使用環境嚴峻之功率模組之接合體及功率模組用基板。

Claims (5)

  1. 一種接合體的製造方法,係加以接合由陶瓷所成之陶瓷構件,和Cu或Cu合金所成之Cu構件而成之接合體的製造方法,其特徵為具備:隔著包含Cu及與該Cu共晶反應之共晶元素的硬焊填料金屬,和活性金屬材,於前述陶瓷構件之一面側,層積前述Cu構件之層積工程;和加熱處理所層積之前述陶瓷構件及前述Cu構件之加熱處理工程;前述共晶元素係選自Ca,Ge,Sr,Sn,Sb,Ba,La,Ce,Al之中之1種或2種以上之元素;含有於硬焊填料金屬之共晶元素之各別量係就質量%而言,為以下之範圍者;Ca:32%以上78%以下Ge:37%以上41%以下Sr:58%以上93%以下Sn:56%以上90%以下Sb:52%以上97%以下Ba:62%以上95%以下La:72%以上89%以下Ce:73%以上93%以下Al:40%以上95%以下。
  2. 如申請專利範圍第1項記載之接合體的製造方法,其中,在前述層積工程中,於前述陶瓷構件側,配置 前述硬焊填料金屬,而於前述Cu構件側,配置前述活性金屬材者。
  3. 如申請專利範圍第1項或第2項記載之接合體的製造方法,其中,在前述層積工程中,於前述陶瓷構件之另一面側,更層積Al或Al合金所成之Al構件,在前述加熱處理工程中,加熱處理所層積之前述陶瓷構件,前述Cu構件,及前述Al構件者。
  4. 如申請專利範圍第1項或第2項記載之接合體的製造方法,其中,前述陶瓷構件係由Si3N4、AlN、Al2O3之中任一加以構成者。
  5. 一種功率模組用基板之製造方法,係於陶瓷基板之一方的面,加以配設Cu或Cu合金所成之Cu板之功率模組用基板之製造方法,其特徵為:將前述陶瓷基板與前述Cu板,經由如申請專利範圍第1項至第4項中任一項記載之接合體的製造方法而接合者。
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