CN106057962B - 叠堆状的光耦合器组件 - Google Patents
叠堆状的光耦合器组件 Download PDFInfo
- Publication number
- CN106057962B CN106057962B CN201610243774.6A CN201610243774A CN106057962B CN 106057962 B CN106057962 B CN 106057962B CN 201610243774 A CN201610243774 A CN 201610243774A CN 106057962 B CN106057962 B CN 106057962B
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- 239000012212 insulator Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000615 nonconductor Substances 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 22
- 230000005484 gravity Effects 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
- H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
- H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15001126.0A EP3082169A1 (de) | 2015-04-17 | 2015-04-17 | Stapelförmiger optokopplerbaustein |
| EP15001126.0 | 2015-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106057962A CN106057962A (zh) | 2016-10-26 |
| CN106057962B true CN106057962B (zh) | 2017-12-26 |
Family
ID=52997172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610243774.6A Active CN106057962B (zh) | 2015-04-17 | 2016-04-18 | 叠堆状的光耦合器组件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10050169B2 (enExample) |
| EP (2) | EP3082169A1 (enExample) |
| JP (1) | JP6129377B2 (enExample) |
| CN (1) | CN106057962B (enExample) |
| TW (1) | TWI627762B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017004149A1 (de) * | 2017-05-02 | 2018-11-08 | Azur Space Solar Power Gmbh | Lichtempfangseinheit |
| EP3470872B1 (en) * | 2017-10-11 | 2021-09-08 | Melexis Technologies NV | Sensor device |
| DE102017011643B4 (de) * | 2017-12-15 | 2020-05-14 | Azur Space Solar Power Gmbh | Optische Spannungsquelle |
| US11322542B2 (en) * | 2020-03-27 | 2022-05-03 | Harvatek Corporation | Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same |
| US11658257B2 (en) * | 2020-03-27 | 2023-05-23 | Harvatek Corporation | Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same |
| DE102021210619A1 (de) * | 2021-09-23 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung |
| WO2024223181A1 (en) * | 2023-04-27 | 2024-10-31 | Ams-Osram International Gmbh | Optical voltage transformer and method for fabricating an optical voltage transformer |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4127862A (en) | 1977-09-06 | 1978-11-28 | Bell Telephone Laboratories, Incorporated | Integrated optical detectors |
| JPS587886A (ja) * | 1981-07-07 | 1983-01-17 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS5893267A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 光結合集積回路 |
| DE3317054A1 (de) | 1983-05-10 | 1984-11-15 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Optokoppler |
| US4996577A (en) | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US4766471A (en) * | 1986-01-23 | 1988-08-23 | Energy Conversion Devices, Inc. | Thin film electro-optical devices |
| JPS62244181A (ja) * | 1986-04-17 | 1987-10-24 | Nec Corp | フオトカプラ |
| JPS6344776A (ja) * | 1986-08-12 | 1988-02-25 | Res Dev Corp Of Japan | 量子井戸を用いた半導体素子 |
| DE3633181C2 (de) | 1986-09-30 | 1998-12-10 | Siemens Ag | Reflexlichtschranke |
| DE4005835C2 (de) * | 1989-02-23 | 1996-10-10 | Agency Ind Science Techn | Verfahren zum Betrieb eines photoelektrischen Wandlers und photoelektrischen Wandler zur Durchführung des Verfahrens |
| JPH0368177A (ja) * | 1989-08-07 | 1991-03-25 | Sharp Corp | 薄膜フォトカプラ |
| DD287356A5 (de) * | 1989-08-23 | 1991-02-21 | Veb Werk Fuer Fernsehelektronik,De | Hochspannungsfester optokoppler |
| JPH0645636A (ja) * | 1992-07-24 | 1994-02-18 | Sharp Corp | 受発光素子およびこれを利用した受発光装置 |
| JP3816114B2 (ja) * | 1993-01-18 | 2006-08-30 | シャープ株式会社 | 光結合装置 |
| DE19638194A1 (de) * | 1996-09-19 | 1998-04-02 | Telefunken Microelectron | Verfahren zum Herstellen eines Koppelelements |
| JP3874145B2 (ja) | 1998-06-10 | 2007-01-31 | ソニー株式会社 | 変調回路、送信装置及び送信回路 |
| DE10011258A1 (de) | 2000-03-08 | 2001-09-20 | Rossendorf Forschzent | Integrierter Optokoppler und Verfahren zu seiner Herstellung |
| US6787693B2 (en) * | 2001-12-06 | 2004-09-07 | International Rectifier Corporation | Fast turn on/off photovoltaic generator for photovoltaic relay |
| WO2005022656A1 (en) * | 2003-09-01 | 2005-03-10 | Lg Innotek Co., Ltd | Led and fabrication method thereof |
| US20060004818A1 (en) | 2004-07-01 | 2006-01-05 | Claudatos Christopher H | Efficient information management |
| US20060048811A1 (en) * | 2004-09-09 | 2006-03-09 | Krut Dimitri D | Multijunction laser power converter |
| US20060060955A1 (en) | 2004-09-22 | 2006-03-23 | Texas Instruments Incorporated | Stacked die infrared transceiver bus |
| ITMI20070101A1 (it) * | 2007-01-24 | 2008-07-25 | St Microelectronics Srl | Optoisolatore galvanico integrato monoliticamente su silicio e relativo processo di integrazione |
| US20140036343A1 (en) * | 2012-07-31 | 2014-02-06 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with improved primary colors |
| US8853658B2 (en) | 2012-08-08 | 2014-10-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Face-to-face opto-coupler device and method of manufacture |
| US20140212085A1 (en) | 2013-01-29 | 2014-07-31 | Georgios Margaritis | Optocoupler |
| JP5865859B2 (ja) * | 2013-03-22 | 2016-02-17 | 株式会社東芝 | 光結合装置 |
| JP2015029037A (ja) * | 2013-06-25 | 2015-02-12 | パナソニックＩｐマネジメント株式会社 | 光結合半導体装置 |
-
2015
- 2015-04-17 EP EP15001126.0A patent/EP3082169A1/de not_active Withdrawn
-
2016
- 2016-04-15 EP EP16000853.8A patent/EP3082170B1/de active Active
- 2016-04-15 TW TW105111902A patent/TWI627762B/zh active
- 2016-04-15 JP JP2016082164A patent/JP6129377B2/ja active Active
- 2016-04-18 US US15/131,121 patent/US10050169B2/en active Active
- 2016-04-18 CN CN201610243774.6A patent/CN106057962B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6129377B2 (ja) | 2017-05-17 |
| EP3082170B1 (de) | 2021-02-17 |
| TWI627762B (zh) | 2018-06-21 |
| US20160308085A1 (en) | 2016-10-20 |
| JP2016208028A (ja) | 2016-12-08 |
| US10050169B2 (en) | 2018-08-14 |
| EP3082170A3 (de) | 2016-11-09 |
| EP3082169A1 (de) | 2016-10-19 |
| CN106057962A (zh) | 2016-10-26 |
| TW201703271A (zh) | 2017-01-16 |
| EP3082170A2 (de) | 2016-10-19 |
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| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant |