TWI627762B - 堆疊狀光耦合器組件 - Google Patents

堆疊狀光耦合器組件 Download PDF

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Publication number
TWI627762B
TWI627762B TW105111902A TW105111902A TWI627762B TW I627762 B TWI627762 B TW I627762B TW 105111902 A TW105111902 A TW 105111902A TW 105111902 A TW105111902 A TW 105111902A TW I627762 B TWI627762 B TW I627762B
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TW
Taiwan
Prior art keywords
receiving
insulator
stacked
component
opt
Prior art date
Application number
TW105111902A
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English (en)
Chinese (zh)
Other versions
TW201703271A (zh
Inventor
沃夫岡 古特
丹尼爾 福爾曼
克萊門 瓦奇特
Original Assignee
德商艾澤太空太陽能公司
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Publication of TW201703271A publication Critical patent/TW201703271A/zh
Application granted granted Critical
Publication of TWI627762B publication Critical patent/TWI627762B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/10—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices
    • H10F55/15—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/155—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H10W90/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
TW105111902A 2015-04-17 2016-04-15 堆疊狀光耦合器組件 TWI627762B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15001126.0A EP3082169A1 (de) 2015-04-17 2015-04-17 Stapelförmiger optokopplerbaustein
??15001126.0 2015-04-17

Publications (2)

Publication Number Publication Date
TW201703271A TW201703271A (zh) 2017-01-16
TWI627762B true TWI627762B (zh) 2018-06-21

Family

ID=52997172

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105111902A TWI627762B (zh) 2015-04-17 2016-04-15 堆疊狀光耦合器組件

Country Status (5)

Country Link
US (1) US10050169B2 (enExample)
EP (2) EP3082169A1 (enExample)
JP (1) JP6129377B2 (enExample)
CN (1) CN106057962B (enExample)
TW (1) TWI627762B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017004149A1 (de) * 2017-05-02 2018-11-08 Azur Space Solar Power Gmbh Lichtempfangseinheit
EP3470872B1 (en) * 2017-10-11 2021-09-08 Melexis Technologies NV Sensor device
DE102017011643B4 (de) * 2017-12-15 2020-05-14 Azur Space Solar Power Gmbh Optische Spannungsquelle
US11322542B2 (en) * 2020-03-27 2022-05-03 Harvatek Corporation Light-emitting diode (LED) assembly and method of manufacturing an LED cell of the same
US11658257B2 (en) * 2020-03-27 2023-05-23 Harvatek Corporation Light source assembly, optical sensor assembly, and method of manufacturing a cell of the same
DE102021210619A1 (de) * 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische vorrichtung
WO2024223181A1 (en) * 2023-04-27 2024-10-31 Ams-Osram International Gmbh Optical voltage transformer and method for fabricating an optical voltage transformer

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
JP3816114B2 (ja) * 1993-01-18 2006-08-30 シャープ株式会社 光結合装置
US20140042344A1 (en) * 2012-08-08 2014-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd Face-to-face optocoupler device and method of manufacture
US20140212085A1 (en) * 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
JP2015029037A (ja) * 2013-06-25 2015-02-12 パナソニックＩｐマネジメント株式会社 光結合半導体装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4127862A (en) 1977-09-06 1978-11-28 Bell Telephone Laboratories, Incorporated Integrated optical detectors
JPS587886A (ja) * 1981-07-07 1983-01-17 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS5893267A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 光結合集積回路
DE3317054A1 (de) 1983-05-10 1984-11-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Optokoppler
US4996577A (en) 1984-01-23 1991-02-26 International Rectifier Corporation Photovoltaic isolator and process of manufacture thereof
JPS62244181A (ja) * 1986-04-17 1987-10-24 Nec Corp フオトカプラ
JPS6344776A (ja) * 1986-08-12 1988-02-25 Res Dev Corp Of Japan 量子井戸を用いた半導体素子
DE3633181C2 (de) 1986-09-30 1998-12-10 Siemens Ag Reflexlichtschranke
DE4005835C2 (de) * 1989-02-23 1996-10-10 Agency Ind Science Techn Verfahren zum Betrieb eines photoelektrischen Wandlers und photoelektrischen Wandler zur Durchführung des Verfahrens
JPH0368177A (ja) * 1989-08-07 1991-03-25 Sharp Corp 薄膜フォトカプラ
DD287356A5 (de) * 1989-08-23 1991-02-21 Veb Werk Fuer Fernsehelektronik,De Hochspannungsfester optokoppler
JPH0645636A (ja) * 1992-07-24 1994-02-18 Sharp Corp 受発光素子およびこれを利用した受発光装置
DE19638194A1 (de) * 1996-09-19 1998-04-02 Telefunken Microelectron Verfahren zum Herstellen eines Koppelelements
JP3874145B2 (ja) 1998-06-10 2007-01-31 ソニー株式会社 変調回路、送信装置及び送信回路
DE10011258A1 (de) 2000-03-08 2001-09-20 Rossendorf Forschzent Integrierter Optokoppler und Verfahren zu seiner Herstellung
US6787693B2 (en) * 2001-12-06 2004-09-07 International Rectifier Corporation Fast turn on/off photovoltaic generator for photovoltaic relay
US8134172B2 (en) * 2003-09-01 2012-03-13 Lg Innotek Co., Ltd. LED and fabrication method thereof
US20060004818A1 (en) 2004-07-01 2006-01-05 Claudatos Christopher H Efficient information management
US20060060955A1 (en) 2004-09-22 2006-03-23 Texas Instruments Incorporated Stacked die infrared transceiver bus
ITMI20070101A1 (it) * 2007-01-24 2008-07-25 St Microelectronics Srl Optoisolatore galvanico integrato monoliticamente su silicio e relativo processo di integrazione
US20140036343A1 (en) * 2012-07-31 2014-02-06 Qualcomm Mems Technologies, Inc. Interferometric modulator with improved primary colors
JP5865859B2 (ja) * 2013-03-22 2016-02-17 株式会社東芝 光結合装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766471A (en) * 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
JP3816114B2 (ja) * 1993-01-18 2006-08-30 シャープ株式会社 光結合装置
US20060048811A1 (en) * 2004-09-09 2006-03-09 Krut Dimitri D Multijunction laser power converter
US20140042344A1 (en) * 2012-08-08 2014-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd Face-to-face optocoupler device and method of manufacture
US20140212085A1 (en) * 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
JP2015029037A (ja) * 2013-06-25 2015-02-12 パナソニックＩｐマネジメント株式会社 光結合半導体装置

Also Published As

Publication number Publication date
JP6129377B2 (ja) 2017-05-17
EP3082170B1 (de) 2021-02-17
US20160308085A1 (en) 2016-10-20
TW201703271A (zh) 2017-01-16
EP3082170A2 (de) 2016-10-19
EP3082170A3 (de) 2016-11-09
CN106057962B (zh) 2017-12-26
CN106057962A (zh) 2016-10-26
US10050169B2 (en) 2018-08-14
EP3082169A1 (de) 2016-10-19
JP2016208028A (ja) 2016-12-08

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