CN106057792B - 半导体装置的制造方法 - Google Patents
半导体装置的制造方法 Download PDFInfo
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- CN106057792B CN106057792B CN201610213415.6A CN201610213415A CN106057792B CN 106057792 B CN106057792 B CN 106057792B CN 201610213415 A CN201610213415 A CN 201610213415A CN 106057792 B CN106057792 B CN 106057792B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-078578 | 2015-04-07 | ||
JP2015078578 | 2015-04-07 | ||
JP2016-027371 | 2016-02-16 | ||
JP2016027371A JP6502874B2 (ja) | 2015-04-07 | 2016-02-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106057792A CN106057792A (zh) | 2016-10-26 |
CN106057792B true CN106057792B (zh) | 2020-02-07 |
Family
ID=57424464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610213415.6A Active CN106057792B (zh) | 2015-04-07 | 2016-04-07 | 半导体装置的制造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6502874B2 (zh) |
CN (1) | CN106057792B (zh) |
TW (1) | TWI624029B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6938212B2 (ja) * | 2017-05-11 | 2021-09-22 | 株式会社ディスコ | 加工方法 |
JP2019149472A (ja) * | 2018-02-27 | 2019-09-05 | 株式会社東芝 | 半導体装置及びダイシング方法 |
JP6915675B2 (ja) * | 2019-01-22 | 2021-08-04 | 住友ベークライト株式会社 | 粘着テープおよび粘着テープ用基材 |
JP2020150224A (ja) * | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11297646A (ja) * | 1998-04-10 | 1999-10-29 | Techno Onishi:Kk | 半導体チップ支持用フィルム |
JP2002009018A (ja) * | 2000-06-19 | 2002-01-11 | Mitsubishi Plastics Ind Ltd | 半導体ウエハ用ダイシングフィルム |
JP4536407B2 (ja) * | 2004-03-30 | 2010-09-01 | 浜松ホトニクス株式会社 | レーザ加工方法及び加工対象物 |
JP2011216671A (ja) * | 2010-03-31 | 2011-10-27 | Furukawa Electric Co Ltd:The | 半導体ウエハの加工用テープ、その製造方法および半導体ウエハの加工方法 |
JP4976522B2 (ja) * | 2010-04-16 | 2012-07-18 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
JP2012079936A (ja) * | 2010-10-01 | 2012-04-19 | Nitto Denko Corp | ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
JP5932290B2 (ja) * | 2011-10-20 | 2016-06-08 | 株式会社テラバイト | 塑性に伴う体積変化に関係するパラメータを考慮した機械特性作成方法 |
JP5975763B2 (ja) * | 2012-07-05 | 2016-08-23 | 株式会社ディスコ | ウエーハの加工方法 |
US8664089B1 (en) * | 2012-08-20 | 2014-03-04 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
CN103715117B (zh) * | 2012-09-28 | 2016-11-16 | 株式会社东芝 | 半导体装置的制造装置以及半导体装置的制造方法 |
JP2014204089A (ja) * | 2013-04-09 | 2014-10-27 | 株式会社ディスコ | ウェーハ搬送機構及びウェーハの加工方法 |
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2016
- 2016-02-16 JP JP2016027371A patent/JP6502874B2/ja active Active
- 2016-03-03 TW TW105106578A patent/TWI624029B/zh active
- 2016-04-07 CN CN201610213415.6A patent/CN106057792B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2016201533A (ja) | 2016-12-01 |
TWI624029B (zh) | 2018-05-11 |
JP6502874B2 (ja) | 2019-04-17 |
TW201715697A (zh) | 2017-05-01 |
CN106057792A (zh) | 2016-10-26 |
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C06 | Publication | ||
PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170815 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220303 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |