CN106024973A - 一种抗pid单晶太阳电池镀双层减反射膜工艺 - Google Patents
一种抗pid单晶太阳电池镀双层减反射膜工艺 Download PDFInfo
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- CN106024973A CN106024973A CN201610371468.0A CN201610371468A CN106024973A CN 106024973 A CN106024973 A CN 106024973A CN 201610371468 A CN201610371468 A CN 201610371468A CN 106024973 A CN106024973 A CN 106024973A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000007747 plating Methods 0.000 title claims abstract description 9
- 230000000694 effects Effects 0.000 title abstract description 8
- 239000002355 dual-layer Substances 0.000 title abstract 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 5
- 239000010439 graphite Substances 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 25
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- 229910000077 silane Inorganic materials 0.000 claims description 13
- 238000009423 ventilation Methods 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 7
- 230000002085 persistent effect Effects 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 7
- 238000005086 pumping Methods 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610371468.0A CN106024973B (zh) | 2016-05-31 | 2016-05-31 | 一种抗pid单晶太阳电池镀双层减反射膜工艺 |
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CN201610371468.0A CN106024973B (zh) | 2016-05-31 | 2016-05-31 | 一种抗pid单晶太阳电池镀双层减反射膜工艺 |
Publications (2)
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CN106024973A true CN106024973A (zh) | 2016-10-12 |
CN106024973B CN106024973B (zh) | 2017-11-24 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110392936A (zh) * | 2017-01-10 | 2019-10-29 | 国立大学法人东北大学 | 太阳能电池 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102864439A (zh) * | 2012-09-03 | 2013-01-09 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种制备具有抗pid效应的减反射膜的方法 |
CN103840032A (zh) * | 2012-11-27 | 2014-06-04 | 陕西天宏硅材料有限责任公司 | 一种硅太阳能单晶电池片双层减反膜的制备工艺 |
CN103943718A (zh) * | 2014-03-19 | 2014-07-23 | 晶澳(扬州)太阳能科技有限公司 | 一种制备抗pid薄膜的方法 |
JP2014239104A (ja) * | 2013-06-06 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池セル、太陽電池モジュール及びその製造方法 |
CN104538500A (zh) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | 用于晶体硅太阳能电池抗lid和pid的pecvd镀膜和烧结工艺 |
CN105140306A (zh) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | 抗pid效应的太阳能电池结构及生产方法 |
CN105609586A (zh) * | 2015-12-24 | 2016-05-25 | 合肥晶澳太阳能科技有限公司 | 一种抗电势诱导衰减的晶体硅电池的制备工艺 |
-
2016
- 2016-05-31 CN CN201610371468.0A patent/CN106024973B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102864439A (zh) * | 2012-09-03 | 2013-01-09 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种制备具有抗pid效应的减反射膜的方法 |
CN103840032A (zh) * | 2012-11-27 | 2014-06-04 | 陕西天宏硅材料有限责任公司 | 一种硅太阳能单晶电池片双层减反膜的制备工艺 |
JP2014239104A (ja) * | 2013-06-06 | 2014-12-18 | 信越化学工業株式会社 | 太陽電池セル、太陽電池モジュール及びその製造方法 |
CN103943718A (zh) * | 2014-03-19 | 2014-07-23 | 晶澳(扬州)太阳能科技有限公司 | 一种制备抗pid薄膜的方法 |
CN104538500A (zh) * | 2015-01-06 | 2015-04-22 | 横店集团东磁股份有限公司 | 用于晶体硅太阳能电池抗lid和pid的pecvd镀膜和烧结工艺 |
CN105140306A (zh) * | 2015-07-27 | 2015-12-09 | 尚德太阳能电力有限公司 | 抗pid效应的太阳能电池结构及生产方法 |
CN105609586A (zh) * | 2015-12-24 | 2016-05-25 | 合肥晶澳太阳能科技有限公司 | 一种抗电势诱导衰减的晶体硅电池的制备工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110392936A (zh) * | 2017-01-10 | 2019-10-29 | 国立大学法人东北大学 | 太阳能电池 |
CN110392936B (zh) * | 2017-01-10 | 2023-11-24 | 国立大学法人东北大学 | 太阳能电池 |
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CN106024973B (zh) | 2017-11-24 |
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Inventor after: Ding Jiye Inventor after: Chen Ganggang Inventor after: An Baijun Inventor after: Wang Zhiqiang Inventor after: Jia Peng Inventor after: Xie Yucai Inventor after: Cui Zhiqiu Inventor before: Ding Jiye Inventor before: Chen Ganggang Inventor before: An Baijun Inventor before: Cui Zhiqiu |
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