CN105993079B - 具有隧道电介质的太阳能电池 - Google Patents

具有隧道电介质的太阳能电池 Download PDF

Info

Publication number
CN105993079B
CN105993079B CN201580007956.7A CN201580007956A CN105993079B CN 105993079 B CN105993079 B CN 105993079B CN 201580007956 A CN201580007956 A CN 201580007956A CN 105993079 B CN105993079 B CN 105993079B
Authority
CN
China
Prior art keywords
dielectric
doped
solar battery
type
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580007956.7A
Other languages
English (en)
Other versions
CN105993079A (zh
Inventor
戴维·D·史密斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maikesheng Solar Energy Co ltd
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Priority to CN201910114397.XA priority Critical patent/CN110047947B/zh
Publication of CN105993079A publication Critical patent/CN105993079A/zh
Application granted granted Critical
Publication of CN105993079B publication Critical patent/CN105993079B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

本发明提供了一种太阳能电池，所述太阳能电池可具有第一电介质，所述第一电介质形成在硅基板的第一掺杂区上方。所述太阳能电池可具有第二电介质，所述第二电介质形成在所述硅基板的第二掺杂区上方，其中所述第一电介质是与所述第二电介质不同类型的电介质。掺杂半导体可形成在所述第一电介质和所述第二电介质上方。P型金属和N型金属可形成在所述掺杂半导体上方。

Description

具有隧道电介质的太阳能电池
背景技术
光伏(PV)电池(常被称为太阳能电池)是熟知的用于将太阳辐射转换为电能的装置。一般来讲，照射在太阳能电池基板表面上并进入基板内的太阳辐射在基板主体中形成电子和空穴对。电子和空穴对迁移至基板中的p掺杂区和n掺杂区，从而在掺杂区之间形成电压差。将掺杂区连接到太阳能电池上的导电区，以将电流从电池引导至外部电路。
效率是太阳能电池的重要特性，因为其直接关系到太阳能电池的发电能力。因此，通常需要用于改进太阳能电池的制造工艺、降低其制造成本以及提高其效率的技术。这种技术可包括形成改进的太阳能电池触点区，以增大电导并提高太阳能电池效率。
附图说明
当结合以下附图考虑时，通过参见具体实施方式和权利要求书可以更完全地理解所述主题，其中在所有附图中，类似的附图标记是指类似的元件。
图1示出了根据一些实施例的示例性电介质化合物的表格。
图2示出了根据一些实施例的示例性能级图。
图3示出了根据一些实施例的另一个示例性能级图。
图4示出了根据一些实施例的又一个示例性能级图。
图5示出了根据一些实施例的掺杂剂扩散图。
图6至图8示出了根据一些实施例的多种示例性电介质的剖视图。
图9示出了根据一些实施例的示例性太阳能电池的剖视图。
具体实施方式
以下具体实施方式在本质上只是说明性的，而并非意图限制本申请的主题的实施例或此类实施例的用途。如本文所用，词语“示例性”意指“用作例子、实例或举例说明”。本文描述为示例性的任何实施未必理解为相比其他实施优选的或有利的。此外，并不意图受前述技术领域、背景技术、发明内容或以下具体实施方式中提出的任何明示或暗示的理论的约束。
本说明书包括对“一个实施例”或“实施例”的提及。短语“在一个实施例中”或“在实施例中”的出现不一定是指同一实施例。特定的特征、结构或特性可以任何与本公开一致的合适方式加以组合。
术语。以下段落提供存在于本公开(包括所附权利要求书)中的术语的定义和/或语境：
“包括”。该术语是开放式的。如在所附权利要求书中所用，该术语并不排除另外的结构或步骤。
“被配置为”。各种单元或部件可被描述或主张成“被配置为”执行一项或多项任务。在这样的语境下，“被配置为”用于通过指示该单元/部件包括在操作期间执行一项或多项那些任务的结构而暗示结构。因此，即使当指定的单元/部件目前不在操作(例如，未开启/激活)时，也可将该单元/部件说成是被配置为执行任务。详述某一单元/电路/部件“被配置为”执行一项或多项任务明确地意在对该单元/部件而言不援用35U.S.C.§112第六段。
如本文所用的“第一”、“第二”等这些术语用作其之后的名词的标记，而并不暗示任何类型的顺序(例如，空间、时间和逻辑等)。例如，提及“第一”电介质并不一定暗示该电介质为某一序列中的第一个电介质；相反，术语“第一”用于区分该电介质与另一电介质(例如，“第二”电介质)。
“基于”。如本文所用，该术语用于描述影响确定结果的一个或多个因素。该术语并不排除可影响确定结果的另外因素。也就是说，确定结果可以仅基于那些因素或至少部分地基于那些因素。考虑短语“基于B确定A”。尽管B可以是影响A的确定结果的因素，但这样的短语并不排除A的确定结果还基于C。在其他实例中，A可以仅基于B来确定。
“耦接”—以下描述是指元件或节点或结构特征被“耦接”在一起。如本文所用，除非另外明确指明，否则“耦接”意指一个元件/节点/结构特征直接或间接连接至另一个元件/节点/结构特征(或直接或间接与其连通)，并且不一定是机械耦接。
此外，以下描述中还仅为了参考的目的使用了某些术语，因此这些术语并非意图进行限制。例如，诸如“上部”、“下部”、“上方”或“下方”之类的术语是指附图中提供参考的方向。诸如“正面”、“背面”、“后面”、“侧面”、“外侧”和“内侧”之类的术语描述部件的某些部分在一致但任意的参照系内的取向和/或位置，通过参考描述所讨论的部件的文字和相关的附图可以清楚地了解所述取向和/或位置。这样的术语可以包括上面具体提及的词语、它们的衍生词语以及类似意义的词语。
在以下描述中，给出了许多具体细节，诸如具体的操作，以便提供对本公开的实施例的透彻理解。对本领域的技术人员将显而易见的是可在没有这些具体细节的情况下实施本公开的实施例。在其他实例中，没有详细地描述熟知的技术，以避免不必要地使本公开的实施例难以理解。
本说明书首先描述了支持为太阳能电池的触点区形成改进的电介质的示例性数据和图解，然后描述了示例性太阳能电池。在全文中提供对示例性太阳能电池的各种实施例的更详细的阐释。
在一个实施例中，电介质可在掺杂半导体(例如，掺杂多晶硅或掺杂非晶硅)与太阳能电池的硅基板之间的界面处形成。在掺杂半导体与太阳能电池的硅基板之间形成电介质的优点可在于增大的电导。其优点还可包括增大的太阳能电池效率。在一些实施例中，掺杂半导体也可称为宽带隙掺杂半导体。在一个实施例中，掺杂半导体可以是P型掺杂半导体或N型掺杂半导体。相似地，P型掺杂半导体可以是P型掺杂多晶硅或P型掺杂非晶硅。同样，N型掺杂半导体可以是N型掺杂多晶硅或N型掺杂非晶硅。在一个实施例中，电介质可称为隧道电介质。太阳能电池还可包括N型硅或P型硅基板。
现在参见图1，根据一些实施例，示出了一张表格，表中列出在硅基板上形成的示例性电介质化合物及其相应特性：带隙(eV)、电子势垒(eV)和空穴势垒(eV)。对于硅基板上的N型掺杂半导体而言，可能有利的是，通过选择在N型掺杂半导体与硅基板之间形成的可增大电子传导并减小空穴传导(例如，电子势垒<空穴势垒)的电介质化合物来增大电子传导。参见图1，一种这样的电介质为二氧化硅。反之，对于硅基板上的P型掺杂半导体而言，可能有利的是，通过选择在P型掺杂半导体与硅基板之间形成的可增大空穴传导并减小电子传导(例如，电子势垒>空穴势垒)的电介质化合物来增大通过P型触点的空穴传导。如图所示，一种这样的电介质为氮化硅。
图2至图4示出了在掺杂半导体与硅基板之间形成的电介质的各种示例性能级图。
图2示出了在P型掺杂半导体与硅基板之间形成的二氧化硅的示例性能级图。如图所示，对于二氧化硅而言，沿着导带的电子势垒120足够低(例如，电子势垒<空穴势垒)以允许电子穿过110，同时阻挡价带上的空穴。对于这种构型(例如，硅基板上的P型掺杂半导体)而言，可通过允许更多空穴穿过并阻挡电子来增大电导。
参照图3，其中示出了在P型掺杂半导体和硅基板之间形成的氮化硅的能级图。与图2相比，电子势垒122足够高(例如，电子势垒>空穴势垒)以阻挡电子穿过112，同时允许114空穴穿过价带。此构型的优点可包括增大的电导。
图4示出了在N型掺杂半导体与硅基板之间形成的二氧化硅的能级图。如图所示，沿着导带的电子势垒足够低(例如，电子势垒<空穴势垒)以允许电子穿过116，同时沿着价带的空穴势垒124足够高，以阻挡空穴118穿过。此构型的优点可包括增大的电导。
可使用在P型掺杂半导体和硅基板之间形成的多种电介质化合物，使得电介质化合物的电子势垒大于空穴势垒(例如，电子势垒>空穴势垒)。这种电介质化合物的一个例子是氮化硅。相似地，可使用在N型掺杂半导体与硅基板之间形成的多种电介质化合物，使得电介质化合物的电子势垒小于空穴势垒(例如，电子势垒<空穴势垒)。这种电介质化合物的一个例子是二氧化硅。将电子势垒小于空穴势垒的电介质用于在N型掺杂半导体与硅基板之间形成的电介质的优点可以是增大电导。相似地，将电子势垒大于空穴势垒的电介质用于在P型掺杂半导体与硅基板之间形成的电介质的优点可以是增大电导。
参照图5，其中示出了掺杂剂扩散图。图5用于图解说明掺杂剂(此处以硼为代表)穿过太阳能电池的半导体140、电介质150并进入硅基板142的扩散。例如，硼可扩散130至多晶硅或非晶硅140、电介质150和硅基板142中。
图中示出了掺杂剂在硅基板处扩散的三个示例132,134,136。在第一示例132中，硅基板142与半导体140(例如，多晶硅或非晶硅)处的掺杂剂浓度比率可为1，从而提供增加的重组和较差的电导。在第二示例134中，硅基板142与半导体140处的掺杂剂浓度比率可为10(例如，在多晶硅每1e19硼浓度中有大约1e20的硼浓度进入硅基板)。在第三示例136中，硅基板142与半导体140处的掺杂剂浓度比率可大于10、100、1000或更大，从而提供改善的结果(例如，在二氧化硅隧道电介质中使用磷作为掺杂剂时，该比率为大约1000，从而得到减少的重组和改善的电导)。一个这样的实施例可包括使用氮化硅作为硅基板上P型掺杂多晶硅140的电介质150。另一个这样的实施例可包括使用二氧化硅作为硅基板上N型掺杂多晶硅140的电介质150。
图6至图8示出在掺杂半导体(例如，掺杂多晶硅或掺杂非晶硅)与硅基板之间形成的电介质的各种实施例。
参照图6，示出了一种示例性电介质。在一个实施例中，电介质152可包括通过一氧化二氮(N2O)的氧化得到的1％-5％的氮160。
参见图7，示出了在P型掺杂多晶硅与硅基板之间形成的示例性电介质。电介质154示出了与硅基板接触的单个氧化物单层162以及设置在氧化物单层162上方的多个166氮化物单层164。在一个实施例中，氧化物单层162可减少电介质界面处的表面重组。在一个实施例中，电介质界面的表面重组可少于1000cm/sec。在一个实施例中，假如氮化物单层164形成在氧化物单层162上方，那么氮化物单层164无需纯净地形成(例如，可含有氧)。在一个实施例中，电介质154可通过原子层沉积(ALD)来形成。在一个实施例中，电介质154可以是氮化硅。
图8示出了在N型掺杂多晶硅与硅基板之间形成的示例性电介质。所示出的电介质156显露多个168氧化物单层162。
在一个实施例中，图7的电介质154和图8的电介质156可一起使用，以通过减少表面重组并增大电导来显著改善太阳能电池效率。
参见图9，示出了太阳能电池。太阳能电池200可包括第一触点区202和第二触点区204。在一个实施例中，第一触点区202可以是P型触点区，而第二触点区204可以是N型触点区。太阳能电池200可包括硅基板210。在一个实施例中，硅基板210可以是多晶硅或多结晶硅。
在一个实施例中，硅基板210可具有第一掺杂区212和第二掺杂区214。在形成第一掺杂区212和第二掺杂区214之前，硅基板210可被清洁、抛光、平面化和/或减薄或以其他方式处理。硅基板可以是N型硅基板或P型硅基板。
第一电介质220和第二电介质222可形成在硅基板210上方。在一个实施例中，第一电介质220可形成在硅基板210的第一部分上方。在一个实施例中，第二电介质222可形成在硅基板210的第二部分上方。在一个实施例中，第一电介质220可以是氮化硅。在一个实施例中，第一电介质220的电子势垒可大于空穴势垒。在一个实施例中，第一电介质220可具有图7所示的电介质154的结构。在一个实施例中，第二电介质222可以是二氧化硅222。在一个实施例中，第二电介质222的电子势垒可小于空穴势垒。在一个实施例中，第二电介质222可具有图8所示的电介质156的结构。
在一个实施例中，第一掺杂区214可形成在第一电介质220下方，而第二掺杂区214可形成在第二电介质222下方。在一个实施例中，硅基板210的第一部分可处于与第一掺杂区相同的位置212。在一个实施例中，硅基板210的第二部分可处于与第二掺杂区相同的位置214。
第一掺杂半导体230可形成在第一电介质220上方。第二掺杂半导体232可形成在第二电介质222上方。在一个实施例中，掺杂半导体可包括掺杂多晶硅或掺杂非晶硅。在一些实施例中，掺杂半导体可以是宽带隙掺杂半导体，例如掺杂非晶硅。在一个实施例中，第一掺杂半导体230和第二掺杂半导体232可分别为第一掺杂多晶硅和第二掺杂多晶硅。在一个实施例中，第一掺杂多晶硅(例如，230)可以是P型掺杂多晶硅。在一个实施例中，第二掺杂多晶硅(例如，232)可以是N型掺杂多晶硅。在一个实施例中，第一掺杂多晶硅(例如，区230)与硅基板210的第二掺杂区212之间的掺杂剂浓度比率可为至少10。在一个实施例中，第二掺杂多晶硅(例如，区232)与硅基板210的第二掺杂区214之间的掺杂剂浓度比率至少可为10。
在一个实施例中，第三电介质层224可形成在第一掺杂半导体230和第二掺杂半导体232上方。太阳能电池200可包括穿过第三电介质224的触点开口。在一个实施例中，触点开口可通过任意数目的包括湿法刻蚀和烧蚀技术(例如激光烧蚀等)的平板印刷工艺形成。在一个实施例中，第三电介质224可为在太阳能电池的正面或背面上形成的抗反射涂层(ARC)或背面抗反射涂层(BARC)。在一个实施例中，第三电介质224可以是氮化硅。
第一金属触点240和第二金属触点242可在第一掺杂半导体230和第二掺杂半导体232上方并穿过第三电介质224中的触点开口而形成。在一个实施例中，第一金属触点240可以是P型金属触点，而第二金属触点242可以是N型金属触点。在一个实施例中，第一金属触点240和第二金属触点242可以是但不限于铜、锡、铝、银、金、铬、铁、镍、锌、钌、钯和/或铂中的一种或多种。
如本文所述，太阳能电池200可包括第一掺杂半导体230和第二掺杂半导体232，例如分别为第一掺杂多晶硅和第二掺杂多晶硅。在一个实施例中，第一掺杂多晶硅和第二掺杂多晶硅可通过热过程而生长。在一些实施例中，第一掺杂多晶硅和第二掺杂多晶硅可通过常规掺杂工艺在硅基板210中沉积掺杂剂而形成。第一掺杂多晶硅区和第二掺杂多晶硅区以及硅基板210的第一掺杂区212和第二掺杂区214可各自包括掺杂材料，但不限定于P型掺杂剂(诸如硼)和N型掺杂剂(诸如磷)。尽管第一掺杂多晶硅和第二掺杂多晶硅均被描述为通过热过程而生长，但是与这里描述或叙述的任何其他形成、沉积或生长过程操作一样，每个层或每种物质都是用任何合适的方法形成的。例如，凡是述及形成的地方，均可使用化学气相沉积(CVD)方法、低压CVD(LPCVD)、常压CVD(APCVD)、等离子体增强CVD(PECVD)、热生长、溅射以及任何其他所需的技术。因此，并且类似地，第一掺杂多晶硅和第二掺杂多晶硅可通过沉积技术、溅射或印刷工艺(诸如喷墨印刷或丝网印刷)形成在硅基板210上。相似地，太阳能电池200可包括第一掺杂半导体230和第二掺杂半导体232，例如分别为第一掺杂非晶硅和第二掺杂非晶硅。
太阳能电池200可以为但不限于背接触太阳能电池或前接触太阳能电池。
尽管上面已经描述了具体实施例，但即使相对于特定的特征仅描述了单个实施例，这些实施例也并非旨在限制本公开的范围。在本公开中所提供的特征的例子除非另有说明否则旨在为说明性的而非限制性的。以上描述旨在涵盖将对本领域的技术人员显而易见的具有本公开的有益效果的那些替代形式、修改形式和等效形式。
本公开的范围包括本文所公开的任何特征或特征组合(明示或暗示)，或其任何概括，不管其是否减轻本文所解决的任何或全部问题。因此，可以在本申请(或对其要求优先权的申请)的审查过程期间对任何此类特征组合提出新的权利要求。具体地讲，参考所附权利要求书，来自从属权利要求的特征可与独立权利要求的那些特征相结合，来自相应的独立权利要求的特征可以按任何适当的方式组合，而并非只是以所附权利要求中枚举的特定形式组合。
在一个实施例中，太阳能电池包括形成在硅基板的第一部分上方的第一电介质。第二电介质形成在硅基板的第二部分上方，其中第一电介质是与第二电介质不同类型的电介质。掺杂半导体形成在第一电介质和第二电介质上方。P型金属触点形成在掺杂半导体和第一电介质上方。N型金属触点形成在掺杂半导体上方和第二电介质上方。
在一个实施例中，第一电介质至少包括与硅基板接触的氧化物单层。
在一个实施例中，第二电介质包括多个氧化物单层。在一个实施例中，第一电介质包括氮化硅。
在一个实施例中，第二电介质包括二氧化硅。
在一个实施例中，掺杂半导体包括掺杂多晶硅。
在一个实施例中，掺杂半导体包括P型掺杂多晶硅和N型掺杂多晶硅。
在一个实施例中，P型掺杂多晶硅形成在第一电介质上方，而N型掺杂多晶硅形成在第二电介质上方。
在一个实施例中，硅基板包括第一电介质下方的第一掺杂区和第二电介质下方的第二掺杂区。
在一个实施例中，P型掺杂多晶硅与第一掺杂区之间的掺杂剂浓度比率至少为10。
在一个实施例中，掺杂半导体包括掺杂非晶硅。
在一个实施例中，太阳能电池包括形成在硅基板的第一掺杂区上方的第一电介质。第二电介质形成在硅基板的第二掺杂区上方，其中第一电介质是与第二电介质不同类型的电介质。第一掺杂多晶硅形成在第一电介质上方。第二掺杂多晶硅形成在第二电介质上方。P型金属触点形成在第一掺杂多晶硅上方。N型金属触点形成在第二掺杂多晶硅上方。
在一个实施例中，第一电介质至少包括与硅基板接触的氧化物单层。
在一个实施例中，第二电介质包括多个氧化物单层。
在一个实施例中，第一电介质包括氮化硅。
在一个实施例中，第二电介质包括二氧化硅。
在一个实施例中，第一掺杂多晶硅与第一掺杂区之间的掺杂剂浓度比率至少为10。
在一个实施例中，太阳能电池包括形成在硅基板的P型掺杂区上方的氮化硅。二氧化硅形成在硅基板的N型掺杂区上方。P型掺杂多晶硅形成在氮化硅上。N型掺杂多晶硅形成在二氧化硅上。P型金属触点形成在P型掺杂多晶硅区上。N型金属触点形成在N型掺杂多晶硅区上。
在一个实施例中，P型掺杂多晶硅与P型掺杂区之间的掺杂剂浓度比率至少为10。
在一个实施例中，氮化硅至少包括与硅基板接触的氧化物单层。

Claims (19)

1.一种太阳能电池，包括：
硅基板，其包括P型掺杂区和N型掺杂区；
第一电介质，所述第一电介质形成在所述硅基板的P型掺杂区上方；
第二电介质，所述第二电介质形成在所述硅基板的N型掺杂区上方，其中所述第一电介质的电子势垒大于空穴势垒，并且所述第二电介质的电子势垒小于空穴势垒；
掺杂半导体，所述掺杂半导体形成在所述第一电介质和所述第二电介质上方；
P型金属触点，所述P型金属触点形成在所述掺杂半导体和所述第一电介质上方；以及
N型金属触点，所述N型金属触点形成在所述掺杂半导体上方和所述第二电介质上方。
2.根据权利要求1所述的太阳能电池，其中所述第一电介质至少包括与所述硅基板接触的氧化物单层。
3.根据权利要求1所述的太阳能电池，其中所述第二电介质包括多个氧化物单层。
4.根据权利要求1所述的太阳能电池，其中所述第一电介质包括氮化硅。
5.根据权利要求1所述的太阳能电池，其中所述第二电介质包括二氧化硅。
6.根据权利要求1所述的太阳能电池，其中所述掺杂半导体包括掺杂多晶硅。
7.根据权利要求1所述的太阳能电池，其中所述掺杂半导体包括P型掺杂多晶硅和N型掺杂多晶硅。
8.根据权利要求7所述的太阳能电池，其中所述P型掺杂多晶硅形成在所述第一电介质上方，而所述N型掺杂多晶硅形成在所述第二电介质上方。
9.根据权利要求8所述的太阳能电池，其中所述P型掺杂多晶硅与所述P型掺杂区之间的掺杂剂浓度比率至少为10。
10.根据权利要求1所述的太阳能电池，其中所述掺杂半导体包括掺杂非晶硅。
11.一种太阳能电池，包括：
硅基板，其包括P型掺杂区和N型掺杂区；
第一电介质，所述第一电介质形成在所述硅基板的P型掺杂区上方；
第二电介质，所述第二电介质形成在所述硅基板的N型掺杂区上方，其中所述第一电介质的电子势垒大于空穴势垒，并且所述第二电介质的电子势垒小于空穴势垒；
第一掺杂多晶硅，所述第一掺杂多晶硅形成在所述第一电介质上方；
第二掺杂多晶硅，所述第二掺杂多晶硅形成在所述第二电介质上方；
P型金属触点，所述P型金属触点形成在所述第一掺杂多晶硅上方；以及
N型金属触点，所述N型金属触点形成在所述第二掺杂多晶硅上方。
12.根据权利要求11所述的太阳能电池，其中所述第一电介质至少包括与所述硅基板接触的氧化物单层。
13.根据权利要求11所述的太阳能电池，其中所述第二电介质包括多个氧化物单层。
14.根据权利要求11所述的太阳能电池，其中所述第一电介质包括氮化硅。
15.根据权利要求11所述的太阳能电池，其中所述第二电介质包括二氧化硅。
16.根据权利要求11所述的太阳能电池，其中所述第一掺杂多晶硅与所述P型掺杂区之间的掺杂剂浓度比率至少为10。
17.一种太阳能电池，包括：
硅基板，其包括P型掺杂区和N型掺杂区；
氮化硅，所述氮化硅形成在所述硅基板的P型掺杂区上方；
二氧化硅，所述二氧化硅形成在所述硅基板的N型掺杂区上方；
P型掺杂多晶硅，所述P型掺杂多晶硅形成在所述氮化硅上；
N型掺杂多晶硅，所述N型掺杂多晶硅形成在所述二氧化硅上；
P型金属触点，所述P型金属触点形成在所述P型掺杂多晶硅区上；以及
N型金属触点，所述N型金属触点形成在所述N型掺杂多晶硅区上。
18.根据权利要求17所述的太阳能电池，其中所述P型掺杂多晶硅与所述P型掺杂区之间的掺杂剂浓度比率至少为10。
19.根据权利要求17所述的太阳能电池，其中所述氮化硅至少包括与所述硅基板接触的氧化物单层。
CN201580007956.7A 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池 Active CN105993079B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910114397.XA CN110047947B (zh) 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/229,769 US9337369B2 (en) 2014-03-28 2014-03-28 Solar cells with tunnel dielectrics
US14/229,769 2014-03-28
PCT/US2015/022332 WO2015148569A1 (en) 2014-03-28 2015-03-24 Solar cells with tunnel dielectrics

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910114397.XA Division CN110047947B (zh) 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池

Publications (2)

Publication Number Publication Date
CN105993079A CN105993079A (zh) 2016-10-05
CN105993079B true CN105993079B (zh) 2019-03-12

Family

ID=54191556

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201910114397.XA Active CN110047947B (zh) 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池
CN201580007956.7A Active CN105993079B (zh) 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201910114397.XA Active CN110047947B (zh) 2014-03-28 2015-03-24 具有隧道电介质的太阳能电池

Country Status (15)

Country Link
US (3) US9337369B2 (zh)
EP (1) EP3123525B1 (zh)
JP (1) JP6487451B2 (zh)
KR (3) KR102530217B1 (zh)
CN (2) CN110047947B (zh)
AU (1) AU2015236204B2 (zh)
BR (1) BR112016022505B1 (zh)
CL (1) CL2016002437A1 (zh)
MX (1) MX358424B (zh)
MY (1) MY190939A (zh)
PH (1) PH12016501871A1 (zh)
SA (1) SA516371930B1 (zh)
SG (1) SG11201608045TA (zh)
TW (1) TWI665807B (zh)
WO (1) WO2015148569A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309441B2 (en) 2013-04-03 2022-04-19 Lg Electronics Inc. Solar cell
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
US9722104B2 (en) 2014-11-28 2017-08-01 Lg Electronics Inc. Solar cell and method for manufacturing the same
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP6785427B2 (ja) 2016-02-01 2020-11-18 パナソニックＩｐマネジメント株式会社 太陽電池素子および太陽電池モジュール
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
CN115692534B (zh) * 2022-12-14 2023-03-28 浙江晶科能源有限公司 一种太阳能电池及光伏组件

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267839B1 (ko) 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
US6380055B2 (en) * 1998-10-22 2002-04-30 Advanced Micro Devices, Inc. Dopant diffusion-retarding barrier region formed within polysilicon gate layer
AUPR719701A0 (en) * 2001-08-23 2001-09-13 Pacific Solar Pty Limited Chain link metal interconnect structure
US7601649B2 (en) * 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7687402B2 (en) * 2004-11-15 2010-03-30 Micron Technology, Inc. Methods of making optoelectronic devices, and methods of making solar cells
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7718888B2 (en) * 2005-12-30 2010-05-18 Sunpower Corporation Solar cell having polymer heterojunction contacts
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7838062B2 (en) * 2007-05-29 2010-11-23 Sunpower Corporation Array of small contacts for solar cell fabrication
TW200947725A (en) 2008-01-24 2009-11-16 Applied Materials Inc Improved HIT solar cell structure
JP2011517120A (ja) * 2008-04-09 2011-05-26 アプライド マテリアルズ インコーポレイテッド ポリシリコンエミッタ太陽電池用簡易裏面接触
EP2304803A1 (en) * 2008-06-11 2011-04-06 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
TWI462307B (zh) 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
US20100206378A1 (en) 2009-02-13 2010-08-19 Miasole Thin-film photovoltaic power system with integrated low-profile high-efficiency inverter
US20100229928A1 (en) * 2009-03-12 2010-09-16 Twin Creeks Technologies, Inc. Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
DE102009024807B3 (de) * 2009-06-02 2010-10-07 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren
DE102009044052A1 (de) * 2009-09-18 2011-03-24 Schott Solar Ag Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls
JP5307688B2 (ja) * 2009-10-27 2013-10-02 株式会社カネカ 結晶シリコン系太陽電池
US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
TWI460827B (zh) * 2010-03-31 2014-11-11 Taiwan Memory Company 快閃記憶體之製作方法
US8686283B2 (en) * 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
JP5424270B2 (ja) * 2010-05-11 2014-02-26 国立大学法人東京農工大学 半導体ソーラーセル
US20120060904A1 (en) * 2010-09-13 2012-03-15 Smith David D Fabrication Of Solar Cells With Silicon Nano-Particles
JP2012060080A (ja) * 2010-09-13 2012-03-22 Ulvac Japan Ltd 結晶太陽電池及びその製造方法
KR20120078933A (ko) * 2011-01-03 2012-07-11 삼성전자주식회사 태양 전지 및 그 제조 방법
WO2012132615A1 (ja) 2011-03-25 2012-10-04 三洋電機株式会社 光電変換装置及びその製造方法
US8658458B2 (en) 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US9373959B2 (en) 2011-06-21 2016-06-21 Lg Electronics Inc. Photovoltaic module
KR20130057286A (ko) * 2011-11-23 2013-05-31 삼성에스디아이 주식회사 광기전력소자 및 제조방법
US20130146136A1 (en) * 2011-12-13 2013-06-13 Kyoung-Jin Seo Photovoltaic device and method of manufacturing the same
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers
US9054255B2 (en) * 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
US9640676B2 (en) * 2012-06-29 2017-05-02 Sunpower Corporation Methods and structures for improving the structural integrity of solar cells
CN102800716B (zh) * 2012-07-09 2015-06-17 友达光电股份有限公司 太阳能电池及其制作方法
KR20140019099A (ko) * 2012-08-02 2014-02-14 삼성에스디아이 주식회사 광전소자
US8642378B1 (en) * 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US9496437B2 (en) 2014-03-28 2016-11-15 Sunpower Corporation Solar cell having a plurality of sub-cells coupled by a metallization structure

Also Published As

Publication number Publication date
CN110047947B (zh) 2023-09-05
KR102530217B1 (ko) 2023-05-08
BR112016022505A2 (zh) 2017-08-15
US20160233348A1 (en) 2016-08-11
AU2015236204B2 (en) 2019-12-12
US20200274008A1 (en) 2020-08-27
EP3123525B1 (en) 2020-12-02
EP3123525A4 (en) 2017-04-19
SG11201608045TA (en) 2016-10-28
PH12016501871B1 (en) 2017-01-09
US9337369B2 (en) 2016-05-10
CL2016002437A1 (es) 2017-02-24
WO2015148569A1 (en) 2015-10-01
SA516371930B1 (ar) 2020-11-05
JP6487451B2 (ja) 2019-03-20
KR20230065383A (ko) 2023-05-11
US20150280031A1 (en) 2015-10-01
KR20160140773A (ko) 2016-12-07
KR20220138877A (ko) 2022-10-13
US10600922B2 (en) 2020-03-24
KR102453500B1 (ko) 2022-10-12
MX358424B (es) 2018-08-20
AU2015236204A1 (en) 2016-07-14
PH12016501871A1 (en) 2017-01-09
CN110047947A (zh) 2019-07-23
CN105993079A (zh) 2016-10-05
EP3123525A1 (en) 2017-02-01
US10840392B2 (en) 2020-11-17
MY190939A (en) 2022-05-23
JP2017510972A (ja) 2017-04-13
BR112016022505B1 (pt) 2023-01-10
MX2016012342A (es) 2016-12-02
TWI665807B (zh) 2019-07-11
TW201603299A (zh) 2016-01-16

Similar Documents

Publication Publication Date Title
CN105993079B (zh) 具有隧道电介质的太阳能电池
US11502208B2 (en) Solar cell emitter region fabrication with differentiated P-type and N-type region architectures
US10700222B2 (en) Metallization of solar cells
CN105655427B (zh) 太阳能电池及其制造方法
TWI746424B (zh) 以改良之前接觸式異質接面製程來製造太陽能電池的方法及其太陽能電池
WO2010085081A3 (en) Electrode structure, device comprising the same and method for forming electrode structure
CN105981182B (zh) 具有无沟道发射极区域的太阳能电池
JP2020129666A (ja) 太陽電池内の相対的ドーパント濃度レベル
CN108963013A (zh) 太阳能电池及其制造方法
CN103165754A (zh) 一种抗电势诱导衰减的太阳能电池的制备工艺
TWI699900B (zh) 具有鈍化層之太陽能電池及其製造方法
Singh et al. Large area co‐plated bifacial n‐PERT cells with polysilicon passivating contacts on both sides
CN106684173A (zh) 双面光电转换元件
US9466755B2 (en) MIS-IL silicon solar cell with passivation layer to induce surface inversion
TW201806168A (zh) ｎ型雙面太陽能電池
US20150303324A1 (en) Method of forming a contact for a photovoltaic cell
KR101212488B1 (ko) 태양전지 셀 제조 방법
Posthuma et al. Technology and Design of Classical and Heterojunction Back Contacted Silicon Solar Cells
TWM497851U (zh) 太陽能電池

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20220826

Address after: Singapore, Singapore City

Patentee after: Maikesheng solar energy Co.,Ltd.

Address before: California, USA

Patentee before: SUNPOWER Corp.

TR01 Transfer of patent right