TW201603299A - 具有穿隧介電質的太陽能電池 - Google Patents

具有穿隧介電質的太陽能電池 Download PDF

Info

Publication number
TW201603299A
TW201603299A TW104109938A TW104109938A TW201603299A TW 201603299 A TW201603299 A TW 201603299A TW 104109938 A TW104109938 A TW 104109938A TW 104109938 A TW104109938 A TW 104109938A TW 201603299 A TW201603299 A TW 201603299A
Authority
TW
Taiwan
Prior art keywords
dielectric
solar cell
doped
doped polysilicon
germanium
Prior art date
Application number
TW104109938A
Other languages
English (en)
Other versions
TWI665807B (zh
Inventor
大衛 Ｄ 史密斯
Original Assignee
太陽電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 太陽電子公司 filed Critical 太陽電子公司
Publication of TW201603299A publication Critical patent/TW201603299A/zh
Application granted granted Critical
Publication of TWI665807B publication Critical patent/TWI665807B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一種太陽能電池可具有形成在矽基板的第一摻雜區上之第一介電質。該太陽能電池可具有形成在矽基板的第二摻雜區上之第二介電質，且第一介電質係與第二介電質的介電質型態不同。摻雜半導體可形成在第一介電質與第二介電質上。正型金屬與負型金屬可形成在摻雜半導體上。

Description

具有穿隧介電質的太陽能電池
本發明係關於一種太陽能電池。更具體而言，本發明係關於一種具有穿隧介電質的太陽能電池。
光伏打(PV)電池，一般習知為太陽能電池，是眾所皆知用於將太陽輻射轉化為電能的裝置。通常，照射在其表面並進入太陽能電池的基板之太陽輻射，會在基板本體中產生電子與電洞對。電子與電洞對轉移至基板中的P摻雜區與n摻雜區，因而在摻雜區之間產生電壓差。摻雜區係連接至太陽能電池上的導電區，使電流直接自電池流向外部電路。
效率為太陽能電池的重要特性，因為其與太陽能產生動力的性能直接相關。因而，普遍期望用於改善製造程序、降低製造成本以及增加太陽能電池的效率的技術。此技術可包含改善太陽能電池的接觸區的形成，以增加電傳導以及太陽能電池效率。
在實施例中，太陽能電池包含形成在矽基板的第一部分之第一介電質。第二介電質係形成在矽基板的第二部分，其中第一介電質與第二介電質的介電質型態不同。摻雜半導體形成在第一介電質與第二介電質上。正型金屬接點形成在摻雜半導體與第一介電質上。負型金屬接點形成在摻雜半導體與第二介電質上。
在一實施例中，第一介電質包含與矽基板接觸的至少一氧化單層。
在一實施例中，第二介電質包含複數個氧化單層。在一實施例中，第一介電質包含矽氮化物。
在一實施例中，第二介電質包含二氧化矽。
在一實施例中，摻雜半導體包含摻雜多晶矽。
在一實施例中，摻雜半導體包含P型摻雜多晶矽與N型摻雜多晶矽。
在一實施例中，P型摻雜多晶矽形成在第一介電質上且N型摻雜多晶矽形成在第二介電質上。
在一實施例中，矽基板包含在第一介電質之下的第一摻雜區以及在第二介電質之下的第二摻雜區。
在一實施例中，P型摻雜多晶矽與第一摻雜區之間的摻雜物濃度比係至少為10。
在一實施例中，摻雜半導體包含摻雜非晶矽。
在實施例中，太陽能電池包含形成在矽基板的第一摻雜區上之第一介電質。第二介電質形成在矽基板的第二摻雜區上，其中第一介電質係與第二介電質的介電質型態不同。第一摻雜多晶矽形成在第一介電質上。第二摻雜多晶矽形成在第二介電質上。正型金屬接點形成在第一摻雜多晶矽上。負型金屬接點形成在第二摻雜多晶矽上。
在一實施例中，第一介電質包含與矽基板接觸的至少一氧化單層。
在一實施例中，第二介電質包含複數個氧化單層。
在一實施例中，第一介電質包含矽氮化物。
在一實施例中，第二介電質包含二氧化矽。
在一實施例中，第一摻雜多晶矽與第一摻雜區之間的摻雜物濃度比係至少為10。
在實施例中，太陽能電池包含形成在矽基板的P型摻雜區上之矽氮化物。二氧化矽形成在矽基板的N型摻雜區上。P型摻雜多晶矽形成在矽氮化物上。N型摻雜多晶矽形成在二氧化矽上。正型金屬接點形成在P型摻雜多晶矽區上。負型金屬接點形成在N型摻雜多晶矽區上。
在一實施例中，P型摻雜多晶矽與P型摻雜區之間的摻雜物濃度比係至少為10。
在一實施例中，矽氮化物包含與矽基板接觸的至少一氧化單層。
以下詳細描述在本質上僅為說明性且不意於限制本申請標的或本申請之實施例或此種實施例之使用。如文中所使用的，詞彙「例示性」意味著「作為一個範例、例子或說明」。任何文中所述為例示性之實施例不必然被詮釋為對其他實施例而言是較佳的或具優勢的。另外，不意圖受呈現於前述之技術領域(technical field)、先前技術(background)、發明內容(brief summary)或下列實施方式(following detailed description)中任何表述或隱喻之理論所限制。
本說明書包含參照「一個實施例(one embodiment)」或「一實施例(an embodiment)」。短語「在一個實施例中」或「在一實施例中(in an embodiment)」之出現不必然指稱相同實施例。特定特徵、結構或特性可以與本揭露相符的任何適合方式結合。
詞彙：下面段落提供對於在本揭露(包含所附申請專利範圍)中可發現之詞彙之定義以及/或範圍：
「包含(comprising)」：此詞彙為開放式的。當使用於所附申請專利範圍中時，此詞彙不排除其他特徵或步驟。
「配置為(configured to)」：各種單元或部件可被描述或主張為「配置為(configured to)」執行一或多件任務。在此種內文中，「配置為(configured to)」用於藉由指出單元/部件包含在操作期間執行一或多件任務之結構而暗示結構。如此一來，即使是在特定單元/部件目前不為操作狀態(例如，不啟動/活動)時，單元/部件還是可被稱為配置為執行任務。敘述單元/電路/部件「配置為(configured to)」執行一或多件任務係明白地旨在不援引35 U.S.C §112第6段於此類單元/部件。
「第一(first)」、「第二(second)」等：當使用於文中時，此類詞彙用作為其所前綴之名詞的標記，且不暗示任何種類的順序(例如，空間、時間、邏輯等)。舉例來說，參照為「第一」之介電質並不必然意味該介電質於順序上為第一介電質；而是此詞彙「第一」係用於區分該介電質與另一個介電質(例如，「第二」介電質)。
「根據」：如在本文中使用，此用語係使用以描述影響判斷的一個或多個因素。此用語不排除可能影響判斷的其他因素。也就是說，判斷可單獨地根據此些因素或至少部分地基於此些因素。考慮慣用語「根據B判斷A(determine A based on B)」。雖然B可為影響A的判斷之因素，此種慣用語不排除也來自根據C的A之判斷。在其他例子，A可單獨地根據B判斷。
「耦合(coupled)」：下列描述指稱元件或節點或特徵「耦合」在一起。當使用於文中時，除非明白地另有敘述，否則「耦合」意味著一個元件/節點/特徵直接地或間接地結合(或直接地或間接地連通)於另一個元件/節點/特徵，且不必然為機械式地。
此外，某些用語還可僅為了參考的目的而用於以下描述中，且因此不意圖為限制。舉例來說，例如「上方的(upper) 」、「下方的(lower) 」、「在上(above) 」以及「在下(below)」的詞彙指稱所參照之圖式中的方向。例如「前(front)」、「後(back)、「後方(rear) 」、「側邊(side) 」、「外側的(outboard) 」以及「內側的(inboard)」之詞彙藉由參照在討論時描述組件之內文及相關圖式，而明確描述在一致但任意參考框架中的組件之部分的方向及/或位置。此類用語可包含於上方具體提到的字眼、其衍生字以及類似意味的字眼。
在下列的描述中，闡述了許多具體的細節，如具體的操作，以提供本揭露的實施例之徹底理解。對所屬技術領域中具有通常知識者將顯而易見的是，本揭露的實施例可在沒有這些具體細節下實施。在其他實例中，為了避免不必要地模糊了本揭露的實施例，並不詳細描述習知技術 。
本說明書首先描述支持用於太陽能電池的接觸區的改善介電質的形成之例示性資料與圖式，接續例示性太陽能電池之闡述。例示性太陽能電池的各種實施例的更詳細說明將被提供在全文中。
在一實施例中，介電質可形成在摻雜半導體，如摻雜多晶矽或摻雜非晶矽，與太陽能電池的矽基板之間的介面。形成在摻雜半導體與太陽能電池的矽基板之間的介電質的優點為可增加電傳導。其優點亦可包含增加之太陽能電池效率。在部分實施例中，摻雜半導體亦可指為寬能帶間隙摻雜半導體。在一實施例中，摻雜半導體可為P型摻雜半導體或N型摻雜半導體。同樣地，P型摻雜半導體可為P型摻雜多晶矽或P型摻雜非晶矽。此外，N型摻雜半導體可為N型摻雜多晶矽或N型摻雜非晶矽。在一實施例中，介電質可稱為穿隧介電質。太陽能電池亦可包含N型矽基板或P型矽基板。
現參照第1圖，其顯示根據部分實施例之列出形成在矽基板上的介電質化合物的樣品以及其對應的特性：能帶間隙(Band Gap)(eV)、電子阻障層(Electron Barrier)(eV)、電洞阻障層(Hole Barrier)(eV)之列表。對於矽基板上的N型摻雜半導體，其藉由選擇形成在N型摻雜半導體與矽基板之間的介電質化合物，此介電質化合物增加電子傳導且降低電洞傳導(例如，電子阻障層＜電洞阻障層)，而可有益於增加電子傳導。參照第1圖，此一介電質係為二氧化矽。相反地，對於矽基板上的P型摻雜半導體，其藉由選擇形成在P型摻雜半導體與矽基板之間的介電質化合物，此介電質化合物增加電洞傳導且降低電子傳導(例如，電子阻障層＞電洞阻障層)，因而可經由P型接點有益於增加電洞傳導。如圖所示，此一介電質係為矽氮化物。
第2圖至第4圖顯示用於形成在摻雜半導體與矽基板之間的介電質之各種例示性的能階圖。
第2圖顯示為形成在P型摻雜半導體與矽基板之間的二氧化矽之例示性的能階圖。如圖所示，沿著傳導能帶的電子阻障層120二氧化矽夠低(例如，電子阻障層＜電洞阻障層)，以允許電子通過110且阻斷價帶上的電洞。對於此配置，如矽基板上的P型摻雜半導體，可藉由允許更多電洞通過且阻斷電子而增加電子傳導。
參照第3圖，其顯示形成在矽基板上的P型摻雜半導體之間的矽氮化物的能階圖。與第2圖相反，電子阻障層122夠高(例如，電子阻障層＞電洞阻障層)，因而阻斷電子通過112同時在價帶上允許電洞通過114。此配置的優點是可包括增加之電傳導。
第4圖顯示為形成在N型摻雜半導體與矽基板之間的二氧化矽的能階圖。如圖所示，沿著傳導能帶的電子阻障層夠低(例如，電子阻障層＜電洞阻障層)以允許電子通過116同時沿著價帶的電洞阻障層124較高因而阻斷電洞通過118。此配置的優點是可包括增加電傳導。
可利用形成在矽基板上的P型摻雜半導體之間的各種介電質化合物，使得用於介電質化合物的電子阻障層大於電洞阻障層(例如，電子阻障層＞電洞阻障層)。這些介電質化合物之一例示係為矽氮化物。同樣地，可利用形成在矽基板上的N型摻雜半導體之間的各種介電質化合物，使得用於介電質化合物的電子阻障層小於電洞阻障層(例如，電子阻障層＜電洞阻障層)。這些介電質化合物之一例示係為二氧化矽。對於使用具有電子阻障層小於電洞阻障層的介電質在形成於N型摻雜半導體與矽基板之間的介電質的優點為能增加電傳導。同樣地，對於使用具有電子阻障層大於電洞阻障層的介電質在形成於P型摻雜半導體與矽基板之間的介電質的優點為可增加電傳導。
參照第5圖，其為顯示摻雜擴散圖。第5圖係用於說明經由太陽能電池的半導體140、介電質150且進入矽基板142的摻雜物的擴散，在此以硼為代表。例如，硼可擴散130至多晶矽或非晶矽半導體140、介電質150以及矽基板142。
顯示在矽基板的摻雜擴散的三個示例132、134、136。在第一示例132中，矽基板142與半導體140，例如多晶矽或非晶矽的摻雜物濃度比可為1，而提供增加的重組以及較差的電傳導。在第二示例134中，矽基板142與半導體140的摻雜物濃度比可為10(例如，在多晶矽約1e20 的硼濃度/入矽基板1e19 的硼濃度)。在第三示例136中，矽基板142與半導體140的摻雜物濃度比可大於10、100、1000或以上，而提供改善的結果(例如，約為1000的具有二氧化矽的穿隧介電質的磷，導致重組的降低以及改善的電傳導)。這樣的一個實施例可包含利用矽氮化物作為用於在矽基板上的P型摻雜多晶矽半導體140的介電質150。其他這樣的實施例可包含利用二氧化矽作為用於在矽基板上的N型摻雜多晶矽半導體140的介電質150。
第6圖至第8圖顯示用於形成在摻雜半導體，例如，摻雜多晶矽或摻雜非晶矽，與矽基板之間的介電質的各種實施例。
參照第6圖，顯示例示性介電質。在一實施例中，經由一氧化二氮(dinitrogen oxide, N2 O)氧化，介電質152可包含1-5%的氮160。
現參照第7圖，顯示形成在P型摻雜多晶矽與矽基板之間的例示性介電質。介電質154顯示為與矽基板接觸的單一的氧化單層162以及設置在氧化單層162的複數個166的氮化單層164。在實施例中，氧化單層162可在介電質的介面降低表面重組。在實施例中，介電質的介面的表面重組可小於1000 cm/sec。在實施例中，假如氮化單層164形成在氧化單層162上，氮化單層164不須被純粹地形成(例如，可含有氧)。在實施例中，介電質154可藉由原子層沉積法(ALD)形成。在實施例中，介電質154可為矽氮化物。
第8圖顯示形成在N型摻雜多晶矽與矽基板之間的例示性介電質。所示介電質156揭露了複數個168的氧化單層162。
在實施例中，第7圖的介電質154與第8圖的介電質156可合併使用以藉由降低表面重組且增加電傳導而顯著改善太陽能電池效率。
現參照第9圖，顯示太陽能電池。太陽能電池200可包含第一接觸區202以及第二接觸區204。在實施例中，第一接觸區202可為P型接觸區且第二接觸區204可為N型接觸區。太陽能電池200可包含矽基板210。在實施例中，矽基板210可為多晶矽或多結晶體矽(multi-crystalline silicon)。
在實施例中，矽基板210可具有第一摻雜區212與第二摻雜區214。矽基板210可被清洗、研磨、平坦化及/或薄化，或者在形成第一摻雜區212與第二摻雜區214之前進行處理。矽基板可為N型矽基板或P型矽基板。
第一介電質220及第二介電質222可形成在矽基板210上。在實施例中，第一介電質220可形成在矽基板210的第一部分上。在實施例中，第二介電質222可形成在矽基板210的第二部分上。在實施例中，第一介電質220可為矽氮化物。在實施例中，第一介電質220可具有電子阻障層大於電洞阻障層。在實施例中，第一介電質220可具有如第7圖所示的介電質154的結構。在實施例中，第二介電質222可為二氧化矽。在實施例中，第二介電質222可具有電子阻障層小於電洞阻障層。在實施例中，第二介電質222可具有如第8圖所示的介電質156的結構。
在實施例中，第一摻雜區212可形成在第一介電質220之下，且第二摻雜區214可形成在第二介電質222之下。在實施例中，矽基板210的第一部份可與第一摻雜區212位在相同位置。在實施例中，矽基板210的第二部份可與第二摻雜區214位在相同位置。
第一摻雜半導體230可形成在第一介電質220上。第二摻雜半導體232可形成在第二介電質222上。在實施例中，摻雜半導體可包含摻雜多晶矽或摻雜非晶矽。在部分實施例中，摻雜半導體可為寬能帶間隙摻雜半導體，例如，摻雜非晶矽。在實施例中，第一摻雜半導體230與第二摻雜半導體232可分別為第一摻雜多晶矽與第二摻雜多晶矽。在實施例中，第一摻雜多晶矽(例如，230)可為P型摻雜多晶矽。在實施例中，第二摻雜多晶矽(例如，232)可為N型摻雜多晶矽。在實施例中，矽基板210的第一摻雜多晶矽(例如，區域第一摻雜半導體230)與第一摻雜區212之間的摻雜物濃度比可至少為10。在實施例中，矽基板210的第二摻雜多晶矽(例如，區域第二摻雜半導體232) 與第二摻雜區214之間的摻雜物濃度比可至少為10。
在實施例中，第三介電質224可形成在第一摻雜半導體230與第二摻雜半導體232。太陽能電池200可包含經由第三介電質224的接觸開口。在實施例中，接觸開口可藉由任何次數的微影製程，包含濕蝕刻及刻蝕技術(例如，雷射刻蝕等)所形成。在實施例中，第三介電質224可為形成在太陽能電池的任一前側或背側上之抗反射塗層(ARC)或背式抗反射塗層(BARC)。在實施例中，第三介電質224可為矽氮化物。
第一金屬接點240與第二金屬接點242可形成在第一摻雜半導體230與第二摻雜半導體232上，且通過第三介電質224的接觸開口。在實施例中，第一金屬接點240可為正型金屬接點且第二金屬接點242可為負型金屬接點。在實施例中，第一金屬接點240與第二金屬接點242可為銅、錫、鋁、銀、金、鉻、鐵、鎳、鋅、釕(ruthenium)、鈀(palladium)及/或鉑(platinum)的一或多種，但不限於此。
如本文所描述，太陽能電池200可包含第一摻雜半導體230與第二摻雜半導體232，例如分別為第一摻雜多晶矽與第二摻雜多晶矽。在實施例中，第一摻雜多晶矽與第二摻雜多晶矽可藉由熱製程而成長。在部分實施例中，第一摻雜多晶矽與第二摻雜多晶矽可藉由習知的摻雜製程而在矽基板210中沉積摻雜物而形成。矽基板210的第一摻雜多晶矽區與第二摻雜多晶矽區以及第一摻雜區212與第二摻雜區214可各別包含摻雜材料，但不限於正型摻雜物，例如硼、以及負型摻雜物，例如磷。雖然第一摻雜多晶矽與第二摻雜多晶矽兩者被描述為通過熱製程而成長，與在此描述或列舉之任何其他形成、沉積或成長製程的操作，但是每一層或物質得以利用任何適當的製程來形成。例如，化學氣相沉積(CVD)製程、低壓CVD(LPCVD)、氣壓CVD(APCVD)、電漿加強CVD (PECVD)、熱成長、濺鍍、以及任何其他期望的技術被用於所述的形成。因此，同樣地，第一摻雜多晶矽與第二摻雜多晶矽可藉由沉積技術、濺鍍或印刷製程，例如噴墨印刷或網版印刷而形成在矽基板210上。同樣地，太陽能電池200可包含第一摻雜半導體230與第二摻雜半導體232，例如分別為第一摻雜非晶矽與第二摻雜非晶矽。
太陽能電池200可為背接觸式太陽能電池或為前接觸式太陽能電池，但不以此為限。
雖然具體實施例已在上面描述，即使關於特定特徵僅描述單一實施例，這些實施例並不意圖限制本揭露的範疇。除非另有說明，本揭露中所提供的特徵之示例意圖為說明的而非限制。上面的描述係意圖涵蓋對於所屬技術領域中具有通常知識者而言顯而易見具有本揭露利益之此類替代方案、修改及等效物。
本揭露的範疇包含本文中所揭露的任何特徵或特徵的組合(不是明顯地就是隱含地)，或者其任何通論，而不論其是否減輕了本文中所提出的任何或所有問題。據此，在本申請(或主張優先權的本申請)之審查期間可制定新的申請專利範圍成任何這樣的特徵組合。特別是，參照所附的申請專利範圍，來自附屬項的特徵可與獨立項的特徵結合，而來自各獨立項的特徵可以任何適當的方式結合，並且不僅為在所附的申請專利範圍中所列舉的特定結合。
110、112、114、116、118‧‧‧通過
120、122‧‧‧電子阻障層
124‧‧‧電洞阻障層
130‧‧‧擴散
132、134、136‧‧‧示例
140‧‧‧半導體
142、210‧‧‧矽基板
150、152、154、156‧‧‧介電質
160‧‧‧氮
162‧‧‧氧化單層
164‧‧‧氮化單層
166、168‧‧‧複數個
200‧‧‧太陽能電池
202‧‧‧第一接觸區
204‧‧‧第二接觸區
212‧‧‧第一摻雜區
214‧‧‧第二摻雜區
220‧‧‧第一介電質
222‧‧‧第二介電質
224‧‧‧第三介電質
230‧‧‧第一摻雜半導體
232‧‧‧第二摻雜半導體
240‧‧‧第一金屬接點
242‧‧‧第二金屬接點
當搭配下列圖式考量時，可藉由參照實施方式及申請專利範圍而推導出專利標的之更完整理解，其中在整份圖式中相同參考符號指代類似的元件。
第1圖係根據部分實施例之介電質化合物的樣品的列表圖。
第2圖係根據部分實施例之樣品能階圖。
第3圖係根據部分實施例之另一樣品能階圖。
第4圖係根據部分實施例之再一樣品能階圖。
第5圖係根據部分實施例之摻雜擴散圖。
第6圖至第8圖係根據部分實施例之各種例示性介電質的截面圖。
第9圖係根據部分實施例之例示性太陽能電池的截面圖。
200‧‧‧太陽能電池
202‧‧‧第一接觸區
204‧‧‧第二接觸區
210‧‧‧矽基板
212‧‧‧第一摻雜區
214‧‧‧第二摻雜區
220‧‧‧第一介電質
222‧‧‧第二介電質
224‧‧‧第三介電質
230‧‧‧第一摻雜半導體
232‧‧‧第二摻雜半導體
240‧‧‧第一金屬接點
242‧‧‧第二金屬接點

Claims (20)

  1. 一種太陽能電池，其包含： 一第一介電質，係形成在一矽基板的一第一部分上； 一第二介電質，係形成在該矽基板的一第二部分上，其中該第一介電質係與該第二介電質的介電質型態不同； 一摻雜半導體，係形成在該第一介電質與該第二介電質上； 一正型金屬接點，係形成在該摻雜半導體與該第一介電質上；以及 一負型金屬接點，係形成在該摻雜半導體以及該第二介電質上。
  2. 如申請專利範圍第1項所述之太陽能電池，其中該第一介電質包含與該矽基板接觸的至少一氧化單層。
  3. 如申請專利範圍第1項所述之太陽能電池，其中該第二介電質包含複數個氧化單層。
  4. 如申請專利範圍第1項所述之太陽能電池，其中該第一介電質包含矽氮化物。
  5. 如申請專利範圍第1項所述之太陽能電池，其中該第二介電質包含二氧化矽。
  6. 如申請專利範圍第1項所述之太陽能電池，其中該摻雜半導體包含摻雜多晶矽。
  7. 如申請專利範圍第1項所述之太陽能電池，其中該摻雜半導體包含一P型摻雜多晶矽以及一N型摻雜多晶矽。
  8. 如申請專利範圍第7項所述之太陽能電池，其中該P型摻雜多晶矽係形成在該第一介電質上而該N型摻雜多晶矽形成在該第二介電質上。
  9. 如申請專利範圍第8項所述之太陽能電池，其中該矽基板包含在該第一介電質之下的一第一摻雜區以及在該第二介電質之下的一第二摻雜區。
  10. 如申請專利範圍第9項所述之太陽能電池，其中該P型摻雜多晶矽與該第一摻雜區之間的摻雜物濃度比係至少為10。
  11. 如申請專利範圍第1項所述之太陽能電池，其中該摻雜半導體包含摻雜非晶矽。
  12. 一種太陽能電池，其包含： 一第一介電質，係形成在一矽基板的一第一摻雜區上； 一第二介電質，係形成在該矽基板的一第二摻雜區上，其中該第一介電質係與該第二介電質的介電質型態不同； 一第一摻雜多晶矽，係形成在該第一介電質上； 一第二摻雜多晶矽，係形成在該第二介電質上； 一正型金屬接點，係形成在該第一摻雜多晶矽上；以及 一負型金屬接點，係形成在該第二摻雜多晶矽上。
  13. 如申請專利範圍第12項所述之太陽能電池，其中該第一介電質包含與該矽基板接觸的至少一氧化單層。
  14. 如申請專利範圍第12項所述之太陽能電池，其中該第二介電質包含複數個氧化單層。
  15. 如申請專利範圍第12項所述之太陽能電池，其中該第一介電質包含矽氮化物。
  16. 如申請專利範圍第12項所述之太陽能電池，其中該第二介電質包含二氧化矽。
  17. 如申請專利範圍第12項所述之太陽能電池，其中該第一摻雜多晶矽與該第一摻雜區之間的摻雜物濃度比係至少為10。
  18. 一種太陽能電池，其包含； 一矽氮化物，係形成在一矽基板的一P型摻雜區上； 一二氧化矽，係形成在該矽基板的一N型摻雜區上； 一P型摻雜多晶矽，係形成在該矽氮化物上； 一N型摻雜多晶矽，係形成在該二氧化矽上； 一正型金屬接點，係形成在一P型摻雜多晶矽區上；以及 一負型金屬接點，係形成在一N型摻雜多晶矽區上。
  19. 如申請專利範圍第18項所述之太陽能電池，其中該P型摻雜多晶矽與該P型摻雜區之間的摻雜物濃度比係至少為10。
  20. 如申請專利範圍第18項所述之太陽能電池，其中該矽氮化物包含與該矽基板接觸的至少一氧化單層。
TW104109938A 2014-03-28 2015-03-27 具有穿隧介電質的太陽能電池 TWI665807B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/229,769 2014-03-28
US14/229,769 US9337369B2 (en) 2014-03-28 2014-03-28 Solar cells with tunnel dielectrics

Publications (2)

Publication Number Publication Date
TW201603299A true TW201603299A (zh) 2016-01-16
TWI665807B TWI665807B (zh) 2019-07-11

Family

ID=54191556

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109938A TWI665807B (zh) 2014-03-28 2015-03-27 具有穿隧介電質的太陽能電池

Country Status (15)

Country Link
US (3) US9337369B2 (zh)
EP (1) EP3123525B1 (zh)
JP (1) JP6487451B2 (zh)
KR (3) KR102530217B1 (zh)
CN (2) CN105993079B (zh)
AU (1) AU2015236204B2 (zh)
BR (1) BR112016022505B1 (zh)
CL (1) CL2016002437A1 (zh)
MX (1) MX358424B (zh)
MY (1) MY190939A (zh)
PH (1) PH12016501871A1 (zh)
SA (1) SA516371930B1 (zh)
SG (1) SG11201608045TA (zh)
TW (1) TWI665807B (zh)
WO (1) WO2015148569A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109599450A (zh) 2013-04-03 2019-04-09 Lg电子株式会社 太阳能电池
US9337369B2 (en) 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP6785427B2 (ja) 2016-02-01 2020-11-18 パナソニックＩｐマネジメント株式会社 太陽電池素子および太陽電池モジュール
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
CN115692534B (zh) * 2022-12-14 2023-03-28 浙江晶科能源有限公司 一种太阳能电池及光伏组件

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267839B1 (ko) 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
US6380055B2 (en) * 1998-10-22 2002-04-30 Advanced Micro Devices, Inc. Dopant diffusion-retarding barrier region formed within polysilicon gate layer
AUPR719701A0 (en) * 2001-08-23 2001-09-13 Pacific Solar Pty Limited Chain link metal interconnect structure
US7601649B2 (en) * 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US7687402B2 (en) * 2004-11-15 2010-03-30 Micron Technology, Inc. Methods of making optoelectronic devices, and methods of making solar cells
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7718888B2 (en) * 2005-12-30 2010-05-18 Sunpower Corporation Solar cell having polymer heterojunction contacts
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7838062B2 (en) * 2007-05-29 2010-11-23 Sunpower Corporation Array of small contacts for solar cell fabrication
WO2009094578A2 (en) 2008-01-24 2009-07-30 Applied Materials, Inc. Improved hit solar cell structure
TW201019482A (en) * 2008-04-09 2010-05-16 Applied Materials Inc Simplified back contact for polysilicon emitter solar cells
KR20110042052A (ko) * 2008-06-11 2011-04-22 솔라 임플란트 테크놀로지스 아이엔씨. 패시팅 및 이온 주입을 이용한 솔라 셀 제작
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
TWI462307B (zh) 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
US20100206378A1 (en) 2009-02-13 2010-08-19 Miasole Thin-film photovoltaic power system with integrated low-profile high-efficiency inverter
US20100229928A1 (en) * 2009-03-12 2010-09-16 Twin Creeks Technologies, Inc. Back-contact photovoltaic cell comprising a thin lamina having a superstrate receiver element
DE102009024807B3 (de) * 2009-06-02 2010-10-07 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren
DE102009044052A1 (de) * 2009-09-18 2011-03-24 Schott Solar Ag Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls
US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
JP5307688B2 (ja) * 2009-10-27 2013-10-02 株式会社カネカ 結晶シリコン系太陽電池
TWI460827B (zh) * 2010-03-31 2014-11-11 Taiwan Memory Company 快閃記憶體之製作方法
US8686283B2 (en) * 2010-05-04 2014-04-01 Silevo, Inc. Solar cell with oxide tunneling junctions
JP5424270B2 (ja) * 2010-05-11 2014-02-26 国立大学法人東京農工大学 半導体ソーラーセル
JP2012060080A (ja) * 2010-09-13 2012-03-22 Ulvac Japan Ltd 結晶太陽電池及びその製造方法
US20120060904A1 (en) * 2010-09-13 2012-03-15 Smith David D Fabrication Of Solar Cells With Silicon Nano-Particles
KR20120078933A (ko) * 2011-01-03 2012-07-11 삼성전자주식회사 태양 전지 및 그 제조 방법
WO2012132615A1 (ja) 2011-03-25 2012-10-04 三洋電機株式会社 光電変換装置及びその製造方法
US8658458B2 (en) 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US9373959B2 (en) 2011-06-21 2016-06-21 Lg Electronics Inc. Photovoltaic module
KR20130057286A (ko) * 2011-11-23 2013-05-31 삼성에스디아이 주식회사 광기전력소자 및 제조방법
US20130146136A1 (en) 2011-12-13 2013-06-13 Kyoung-Jin Seo Photovoltaic device and method of manufacturing the same
US9190549B2 (en) * 2012-02-28 2015-11-17 International Business Machines Corporation Solar cell made using a barrier layer between p-type and intrinsic layers
US9054255B2 (en) * 2012-03-23 2015-06-09 Sunpower Corporation Solar cell having an emitter region with wide bandgap semiconductor material
JP5546616B2 (ja) * 2012-05-14 2014-07-09 セリーボ， インコーポレイテッド トンネル酸化物を有する後面接合太陽電池
US9640676B2 (en) * 2012-06-29 2017-05-02 Sunpower Corporation Methods and structures for improving the structural integrity of solar cells
CN102800716B (zh) * 2012-07-09 2015-06-17 友达光电股份有限公司 太阳能电池及其制作方法
KR20140019099A (ko) * 2012-08-02 2014-02-14 삼성에스디아이 주식회사 광전소자
US8642378B1 (en) * 2012-12-18 2014-02-04 International Business Machines Corporation Field-effect inter-digitated back contact photovoltaic device
US9231129B2 (en) 2014-03-28 2016-01-05 Sunpower Corporation Foil-based metallization of solar cells
US11811360B2 (en) 2014-03-28 2023-11-07 Maxeon Solar Pte. Ltd. High voltage solar modules
US9337369B2 (en) * 2014-03-28 2016-05-10 Sunpower Corporation Solar cells with tunnel dielectrics
US9496437B2 (en) 2014-03-28 2016-11-15 Sunpower Corporation Solar cell having a plurality of sub-cells coupled by a metallization structure

Also Published As

Publication number Publication date
BR112016022505B1 (pt) 2023-01-10
CN110047947A (zh) 2019-07-23
CN110047947B (zh) 2023-09-05
AU2015236204A1 (en) 2016-07-14
EP3123525A1 (en) 2017-02-01
EP3123525A4 (en) 2017-04-19
EP3123525B1 (en) 2020-12-02
KR102707226B1 (ko) 2024-09-19
MX358424B (es) 2018-08-20
SG11201608045TA (en) 2016-10-28
MX2016012342A (es) 2016-12-02
CN105993079B (zh) 2019-03-12
US9337369B2 (en) 2016-05-10
CN105993079A (zh) 2016-10-05
AU2015236204B2 (en) 2019-12-12
KR102453500B1 (ko) 2022-10-12
BR112016022505A2 (zh) 2017-08-15
US20150280031A1 (en) 2015-10-01
US10600922B2 (en) 2020-03-24
JP6487451B2 (ja) 2019-03-20
JP2017510972A (ja) 2017-04-13
PH12016501871B1 (en) 2017-01-09
TWI665807B (zh) 2019-07-11
PH12016501871A1 (en) 2017-01-09
CL2016002437A1 (es) 2017-02-24
US20200274008A1 (en) 2020-08-27
US10840392B2 (en) 2020-11-17
SA516371930B1 (ar) 2020-11-05
US20160233348A1 (en) 2016-08-11
KR20220138877A (ko) 2022-10-13
KR102530217B1 (ko) 2023-05-08
WO2015148569A1 (en) 2015-10-01
KR20160140773A (ko) 2016-12-07
MY190939A (en) 2022-05-23
KR20230065383A (ko) 2023-05-11

Similar Documents

Publication Publication Date Title
TW201603299A (zh) 具有穿隧介電質的太陽能電池
US11502208B2 (en) Solar cell emitter region fabrication with differentiated P-type and N-type region architectures
US12074233B2 (en) Metallization of solar cells
US12074232B2 (en) Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
US20220020889A1 (en) Blister-free polycrystalline silicon for solar cells
TWI685117B (zh) 具結晶矽且光接收表面鈍化之太陽能電池及其製造方法
TWI699900B (zh) 具有鈍化層之太陽能電池及其製造方法
TW202107720A (zh) 太陽能電池、其表面鈍化結構及其表面鈍化方法