CN103165754A - 一种抗电势诱导衰减的太阳能电池的制备工艺 - Google Patents
一种抗电势诱导衰减的太阳能电池的制备工艺 Download PDFInfo
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Abstract
本发明公开了一种抗电势诱导衰减的太阳能电池的制备工艺,包括如下步骤:(a)将硅片清洗,去损伤层,制绒;(b)将硅片放入管式扩散炉中,进行扩散;(c)将扩散后的硅片去除磷硅玻璃和背结;(d)在发射极表面生长一层二氧化硅,再沉积一层氮化硅,或者直接在发射极表面沉积氮化硅钝化减反射层;(e)丝网印刷背电极和正面电极;(f)烧结并测试分选。这种抗电势诱导衰减的太阳能电池的制备工艺可以提高太阳能电池及其制成的组件的抗电势诱导衰减的能力,从而保证组件在高电压工作环境中性能的稳定。
Description
技术领域
本发明涉及太阳能电池领域,尤其涉及一种抗电势诱导衰减的太阳能电池的制备工艺。
背景技术
电势诱导衰减最早是Sunpower在2005年发现的。太阳能电池组件长期在高电压作用下使得玻璃,封装材料之间存在漏电流,大量电荷聚集在电池片表面,使得电池表面的钝化效果恶化,导致开路电压,短路电流和填充因子降低,使组件性能低于设计标准。
发明内容
本发明所要解决的技术问题是,提供一种能够保证光伏组件在高压工作环境中性能稳定的一种抗电势诱导衰减的太阳能电池的制备工艺。
为了解决上述技术问题,本发明是通过以下技术方案实现的:一种抗电势诱导衰减的太阳能电池的制备工艺,其特征是,包括如下步骤:(a)将硅片清洗,去损伤层,制绒;(b)将硅片放入管式扩散炉中,进行扩散;(c)将扩散后的硅片去除磷硅玻璃和背结;(d)在发射极表面生长一层二氧化硅,再沉积一层氮化硅,或者直接在发射极表面沉积氮化硅钝化减反射层;(e)丝网印刷背电极和正面电极;(f)烧结并测试分选。
优选的,所述步骤(b)中扩散后的方阻值为50~80Ω/口,结深为0.25~0.35μm。
优选的,所述步骤(d)生长二氧化硅的方法为热氧化、等离子体气相沉积法、化学氧化法或UV氧化法。
优选的,所述步骤(d)生长二氧化硅的厚度为5-40nm。
优选的,所述步骤(d)的具体工艺步骤如下:
(1)将扩散后的硅片放入石墨舟上;
(2)充入氨气进行表面轰击;
(3)充入硅烷和氨气进行氮化硅薄膜的沉积,温度为375℃~500℃,硅烷和氨气的流量比为0.4~0.06,厚度为40~85nm,折射率为2.0~2.2。
优选的,所述步骤(d)在氧化硅表面生长的氮化硅层中氧化硅膜和氮化硅膜总厚度控制在75-85nm。
优选的,所述步骤(d)中在发射极表面直接沉积的氮化硅钝化减反射层可以是单层膜也可以是多层膜或者是梯度膜;所述单层膜的折射率大于2.1,厚度为40~75nm;双层膜第一层膜的折射率大于2.4,厚度为20~30nm,第二层膜的折射率为2.1~2.4,厚度为50~60nm;三层膜的第一层折射率大于2.5,厚度为10~20nm,第二层膜的折射率为2.2~2.5,厚度为20~30nm,第三层膜的折射率为2.0~2.2,厚度为30~40nm;梯度膜的折射率由下往上为2.5~2.1,厚度由薄到厚。
与现有技术相比,本发明的有益之处在于:这种抗电势诱导衰减的太阳能电池的制备工艺可以提高太阳能电池及其制成的组件的抗电势诱导衰减的能力,从而保证组件在高电压工作环境中性能的稳定。
具体实施方式:
下面通过具体实施方式对本发明进行详细描述。
实例一:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为50Ω/口,结深为0.35μm;将扩散后的硅片去除磷硅玻璃并去除背结;发射极表面沉积氮化硅钝化减反射层;减反射层为单层膜,厚度为70nm,折射率为2.2;丝网印刷正面电极和背电极;烧结并测试分选。
实例二:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为55Ω/口,结深为0.30μm;将扩散后的硅片去除磷硅玻璃并去除背结;发射极表面沉积氮化硅钝化减反射层;减反射层为双层膜,第一层膜的厚度为20nm,折射率为2.5,第二层膜的厚度为50nm,折射率为2.1;丝网印刷正面电极和背电极;烧结并测试分选。
实例三:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为50Ω/口,结深为0.35μm;将扩散后的硅片去除磷硅玻璃并去除背结;发射极表面沉积氮化硅钝化减反射层;减反射层为三层膜,第一层膜的厚度为10nm,折射率为2.5,第二层膜的厚度为20nm,折射率为2.2;第三层膜的厚度为40n,折射率为2.1;丝网印刷正面电极和背电极;烧结并测试分选。
实例四:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为60Ω/口,结深为0.35μm;将扩散后的硅片去除磷硅玻璃并去除背结; 发射极表面沉积氮化硅钝化减反射层;减反射层为三层膜,第一层膜的厚度为30nm,折射率为2.4,第二层膜的厚度为30nm,折射率为2.2;第三层膜的厚度为10n,折射率为2.0;丝网印刷正面电极和背电极;烧结并测试分选。
实例五:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为65Ω/口,结深为0.35μm;将扩散后的硅片去除磷硅玻璃并去除背结; 发射极表面热生长一层二氧化硅层,厚度为15nm;在二氧化硅薄膜上沉积氮化硅钝化减反射层;减反射层为梯度膜,折射率从下往上从2.5递减至2.0,总厚度为60nm;从丝网印刷正面电极和背电极;烧结并测试分选。
实例六:
将硅片清洗,去损伤层,制绒;将硅片放入管式扩散炉中进行扩散,扩散后方阻为85Ω/口,结深为0.35μm;将扩散后的硅片去除磷硅玻璃并去除背结; 发射极表面沉积一层二氧化硅层,厚度为15nm;在二氧化硅薄膜上沉积氮化硅钝化减反射层;减反射层为单层膜,折射率2.10,总厚度为60nm;从丝网印刷正面电极和背电极;烧结并测试分选。
抗电势诱导衰减的太阳能电池的制备工艺可以提高太阳能电池及其制成的组件的抗电势诱导衰减的能力,从而保证组件在高电压工作环境中性能的稳定。
需要强调的是:以上仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,凡是依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (7)
1.一种抗电势诱导衰减的太阳能电池的制备工艺,其特征是,包括如下步骤:
(a)将硅片清洗,去损伤层,制绒;
(b)将硅片放入管式扩散炉中,进行扩散;
(c)将扩散后的硅片去除磷硅玻璃和背结;
(d)在发射极表面生长一层二氧化硅,再沉积一层氮化硅,或者直接在发射极表面沉积氮化硅钝化减反射层;
(e)丝网印刷背电极和正面电极;
(f)烧结并测试分选。
2.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(b)中扩散后的方阻值为50~80Ω/口,结深为0.25~0.35μm。
3.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(d)生长二氧化硅的方法为热氧化、等离子体气相沉积法、化学氧化法或UV氧化法。
4.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(d)中生长二氧化硅的厚度为5-40nm。
5.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(d)的具体工艺步骤如下:
(1)将扩散后的硅片放入石墨舟上;
(2)充入氨气进行表面轰击;
(3)充入硅烷和氨气进行氮化硅薄膜的沉积,温度为375℃~500℃,硅烷和氨气的流量比为0.4~0.06,厚度为40~85nm,折射率为2.0~2.2。
6.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(d)在氧化硅表面生长的氮化硅层中氧化硅膜和氮化硅膜总厚度控制在75-85nm。
7.根据权利要求1所述的抗电势诱导衰减的太阳能电池的制备工艺,其特征是,所述步骤(d)中在发射极表面直接沉积的氮化硅钝化减反射层可以是单层膜也可以是多层膜或者是梯度膜;所述单层膜的折射率大于2.1,厚度为40~75nm;双层膜第一层膜的折射率大于2.4,厚度为20~30nm,第二层膜的折射率为2.1~2.4,厚度为50~60nm;三层膜的第一层折射率大于2.5,厚度为10~20nm,第二层膜的折射率为2.2~2.5,厚度为20~30nm,第三层膜的折射率为2.0~2.2,厚度为30~40nm;梯度膜的折射率由下往上为2.5~2.1,厚度由薄到厚。
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Cited By (9)
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