CN105990265A - 功率转换电路的封装模块及其制造方法 - Google Patents
功率转换电路的封装模块及其制造方法 Download PDFInfo
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- CN105990265A CN105990265A CN201510088393.0A CN201510088393A CN105990265A CN 105990265 A CN105990265 A CN 105990265A CN 201510088393 A CN201510088393 A CN 201510088393A CN 105990265 A CN105990265 A CN 105990265A
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- package module
- substrate
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- power conversion
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Abstract
本发明公开了一种功率转换电路的封装模块及其制造方法。该功率转换电路的封装模块可表面贴装于一系统板。功率转换电路的封装模块包括:基板,功率器件芯片和塑封层以及多个引脚。基板具有金属层,绝缘基板层和导热层,绝缘基板层位于金属层和导热层之间。功率器件芯片连接金属层;基板的金属层上的所有器件埋入塑封层。多个引脚电性连接金属层且多个该引脚埋入塑封层,至少露出引脚与系统板的电性连接的接触面。接触面平行和/或垂直导热层。此种结构的封装模块占用面积小,利于批量制作。
Description
技术领域
本发明涉及半导体封装领域,尤其涉及一种功率转换电路的封装模块及其制造方法。
背景技术
高效率、高功率密度、高可靠性以及低成本一直是电力、电子领域对电源变换器的要求。高效率意味着减少能耗,利于节能减排、保护环境,并减少使用成本。高功率密度则意味着体积小、重量轻,在减少材料成本的同时亦可减少运输成本和空间需求,从而减少建设成本。高可靠性意味着更长的使用寿命以及更低的维护成本。
在电源变换器中,半导体器件是决定效率的重要因素之一。为了顺应电源变换器的发展趋势,半导体器件的模块化成为了重点的发展趋势,功率模块封装本身亦不断以轻、薄、短、小的方向发展。随着功率半导体器件封装尺寸不断缩小,对散热的需求也越来越高。
图1为传统的方形扁平无引脚封装(Quad Flat None-lead Package,QFN)结构的剖面图。如图1所示,其通常将芯片(die)1通过粘接材料(adhesive)5贴装到引线框架(lead frame)2上,再通过引线键合(wirebonding)方式将芯片1上表面的焊盘(pad)和引线框架2的引脚相连,最后再通过塑封料(molding compound)4将芯片1、键合线3及引线框架2封装成一个整体。虽然该封装结构具有结构简单、封装尺寸小及系统板使用效率高等优点,但在散热方面存在比较明显的问题。在该结构中,芯片贴装在引线框架上,而引线框架又作为一个电极贴装到系统板(图中未示出)上,因此芯片在工作过程中产生的热量通过其正下方的引线框架散到系统板上。但由于芯片产生的热量绝大部分会传导到系统板上,不利于系统板上其他单元(如驱动单元、控制单元等)的有效工作,因而在实际使用时,通常需要在系统板上预留足够的空间以防止热对驱动及控制单元的影响,并且需要在系统板上进行专门的热设计,从而达到有效散热的目的。
图2A-图2C为双列直插式封装(Dual Inline Package,DIP)结构的剖面图。由于引线框架4的引脚在塑封料5的外面,占用了一定的空间此种引脚的设计不利于节省系统端空间,因此该种引脚设计还有待优化。此外由于引脚框架4的引脚在塑封料5的外面,也导致了在进行塑封时需要采用一穴一模块的结构,即一个封装尺寸需要一个模具,这样在模块尺寸改变时就必须更换新的塑封模具,而不同尺寸模具的成本提高了功率模块的生产成本。在实际操作时,为了避免过多的塑封模具的投资,在设计时往往会考虑模具的通用性,但这样又对设计产生了种种限制。
发明内容
有鉴于此,本发明提供了一种在满足封装轻、薄的基础上,具有高散热性的功率转换电路的封装模块,及其制造方法。
本发明提供的实施例的额外方面和优点将部分地在下面的描述中阐述,并且部分地将从描述中变得显然,或者可以通过本发明的实践而习得。
本发明一方面公开了一种功率转换电路的封装模块,该功率转换电路的封装模块可表面贴装于一系统板,包括:基板,功率器件芯片,塑封层和多个引脚。该基板具有金属层,绝缘基板层和导热层。该绝缘基板层位于该金属层和该导热层之间。功率器件芯片连接该金属层。基板的金属层上的所有器件埋入塑封层。多个引脚电性连接金属层且埋入塑封层,至少露出引脚与系统板的电性连接的接触面,接触面平行和/或垂直导热层。其中,基板的导热层对与金属层相连的需散热的器件进行散热。
于一实施例中,上述引脚为引线框架制成。
于另一实施例中,上述引脚为铜柱,该铜柱通过导电粘接材料与上述金属层电性连接。
于再一实施例中,上述塑封层至少包封上述基板的金属层,曝露上述基板的导热层。
于再一实施例中,还包括金属连接体,该金属连接体埋入上述塑封层。
于再一实施例中,上述金属连接体为键合线,该键合线电连接上述功率器件芯片或者上述功率器件芯片与上述金属层。
于再一实施例中,上述金属连接体为铜条,该铜条电连接上述功率器件芯片或者上述功率器件芯片与上述金属层。
于再一实施例中,上述金属连接体为金属凸点,上述功率器件芯片反扣于上述金属凸点,实现上述功率器件芯片与上述金属层的电性连接。
于再一实施例中,上述基板为金属化陶瓷基板或者绝缘金属基板。
于再一实施例中,上述引脚包括至少一L型金属部,上述L型金属部由竖直部和水平部构成;上述引脚曝露的接触面位于该水平部。
本发明另一方面公开了一种制造上述功率转换电路的封装模块的方法步骤a:将未封装的功率转换电路制作为矩阵排列的形式;步骤b:用塑封层将该功率转换电路带器件的一面包封起来;步骤c:使该功率转换电路中引脚的接触面从该塑封层中曝露出;步骤d:分割包封后的矩阵排列的功率转换电路为单个独立的功率转换电路的封装模块。
于一实施例中,步骤a包括:步骤a1:制作连片式基板;步骤a2:完成该连片式基板上功率器件芯片的安装和连片式引脚的连接。
于另一实施例中,步骤d包括:步骤d1:预切割上述连片式基板;步骤d2:切割上述连片式引脚和上述塑封层。
于再一实施例中,步骤a包括:步骤a1:将若干基板形成矩阵式摆放;步骤a2:完成若干基板上功率器件芯片的安装和连片式引脚的连接。
于再一实施例中,步骤d中分割包括分割上述连片式引脚和塑封层。
于再一实施例中,上述连片式引脚为引线框架制作。
本发明公开的功率转换电路的封装模块通过将引脚从远离基板下表面的一侧引出,实现电、热的分离,有利于功率转换电路的封装模块在工作时的散热,并因为不会散热到系统板,节省了系统板散热所需要的空间,且不会影响到系统板上其他单元的工作;此外,由于引脚整体在封装体的内部,有效提升了封装体本身的利用效率,节省了空间。本发明公开的功率转换电路的封装模块制造方法,采用连片式的塑封方式,这种整体塑封的方式对塑封模具的要求明显降低,即使功率转换电路的封装模块的尺寸改变,也无须更新塑封模具,并具有通用性,为功率转换电路的封装模块的制造降低了生产成本。
附图说明
通过参照附图详细描述其示例实施方式,本发明的上述和其它特征及优点将变得更加明显。
图1为传统的方形扁平无引脚封装结构的剖面图。
图2A-图2C为传统的双列直插式封装结构的剖面图。
图3为本发明实施例一的功率转换电路的封装模块的剖面图。
图4为本发明实施例二的功率转换电路的封装模块的剖面图。
图5为本发明实施例三的功率转换电路的封装模块的剖面图。
图6为本发明实施例四的功率转换电路的封装模块的剖面图。
图7为本发明实施例五的功率转换电路的封装模块的剖面图。
图8为本发明实施例六的功率转换电路的封装模块的剖面图。
图9为本发明一个实施例的功率转换电路的封装模块制造方法中整体塑封后的塑封体的俯视图。
图10为沿图9中AA’线的剖面图。
图11A至图11D为本发明一个实施例的功率转换电路的封装模块制造方法的流程示意图。
图12为本发明另一个实施例的功率转换电路的封装模块制造方法中整体塑封后的塑封体的俯视图。
图13为沿图12中AA’线的剖面图。
图14为本发明实施例的功率转换电路的封装模块的多种引脚结构的示意图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式;相反,提供这些实施方式使得本发明将全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。在图中相同的附图标记表示相同或类似的结构,因而将省略对它们的重复描述。
所描述的特征、结构可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中,提供许多具体细节从而给出对本发明的实施方式的充分理解。然而,本领域技术人员应意识到,没有所述特定细节中的一个或更多,或者采用其它的方法、组元、材料等,也可以实践本发明的技术方案。在其它情况下,不详细示出或描述公知结构、材料或者操作以避免模糊本发明。
图3为本发明实施例一的功率转换电路的封装模块的剖面图。如图3所示,本发明实施例一的功率转换电路的封装模块10包括:基板100、至少一个功率器件芯片110、至少一个引脚120及塑封层130。
基板100作为至少一个功率器件芯片110的安装载板具有金属层、绝缘基板层和导热层,其中绝缘基板层位于金属层和导热层之间。至少一个功率器件芯片110例如可以为MOSFET(金属氧化物半导体场效应晶体管)、IGBT(绝缘栅双极晶体管)或二极管等,安装于基板100的第一表面上,通过键合材料(bonding material)150(例如导电胶、钎料、烧结材料、扩散焊接材料等)实现与基板100的电/机械/热连接;功率器件芯片110的电极可以通过键合线(bonding wire)140以引线键合(wirebonding)方式实现与基板100、引脚120等之间的电/机械/热连接。引脚120可以通过导电粘接材料(例如焊锡、导电有机浆料等)粘接到基板100上,以实现与基板100的电连接。此外,基板100金属层上还安装有无源器件(图中未示出),例如电感、电容等。基板100的导热层供传导功率转换电路工作时产生的热量。
如图3所示,基板100包括金属层1000、绝缘层1100及导热层1200。其中,在金属层1000上形成有电路图案,绝缘层1100位于金属层1000与导热层1200之间,至少一个功率器件芯片110形成于金属层1000上。在导热层1200远离绝缘层1100的表面外接散热器(图中未示出),该种结构可以有效的将功率转换电路的封装模块工作时产生的热量传递到基板100一侧,并通过外接的散热器将热量带走,此外,导热层1200与散热器之间还可以设置导热硅脂层,从而使热量更快更直接地传导出去。
基板100例如可以为直接敷铜陶瓷(Direct Bonding Copper,DBC)基板,还可以为厚膜基板、直接镀铜(Direct Plating Copper,DPC)基板、绝缘金属基板(Insulated Metal Substrate,IMS)等,本发明不以此为限。其中,厚膜基板一般是将金属粉末(Ag,Cu等)与玻璃材料加上粘接剂混合,均匀成泥状的浆料,利用刮刀和掩膜板将浆料以图案的形式印制到陶瓷基板上,再通过800~900度的烧结温度制作成有电路图形的厚膜基板。DPC基板是将陶瓷基板先做前处理清洁,利用真空镀膜方式在陶瓷基板上溅射结合于铜金属的复合层,再以蚀刻工艺制作成线路,最后再通过电镀或化学镀的方式增加线路的厚度,从而完成金属层的制作。IMS基板是在金属板(铝或铜等)上压合一层有机膜充当绝缘层,再在绝缘膜上电镀金属化线路(或者再在绝缘膜上压合铜箔再蚀刻成线路)。
塑封层130是在制造工艺中通过向模具(图中未示出)中填充塑封料(molding compound)而形成,以进行整体结构的机械支撑和电气保护。塑封层130形成于基板100之上,并将至少一个功率器件芯片110及至少一个引脚120包裹于其中,形成一个封装体,包括:顶表面和与顶表面相交的多个侧表面,其中顶表面与基板100大致平行。此外,在一实施例中塑封层130还将基板100的金属层1000包裹于其中。
引脚120电性连接基板100的金属层1000,仅露出与外接的系统板(图中未示出)的接触面,以使功率转换电路的封装模块10与系统板电连接。为了使功率转换电路的封装模块10在工作时,散热和与系统板的电连接不在一个平面上,每个引脚120的与系统板电性连接的接触面(即暴露出封装体外的表面)均被设置于塑封层130的顶表面上,即每个引脚120的顶表面暴露于塑封层130的顶表面,与基板100的导热层1200平行,例如如图3中的接触面a所示,如此使得功率转换电路的封装模块的散热及与系统板的电连接分别在基板的导热层一侧和塑封层130的顶表面一侧,从而可以在基板的导热层一侧加装散热器来提高模块的散热能力;此外,因为不会散热到系统板,节省了系统板散热所需要的空间,并且不会影响到系统板上其他单元的工作。
此外,为了简化封装工艺、降低生产成本(具体将在下文中介绍),在对引脚120进行设计时,使得每个引脚120包括至少一个L形弯折部,该L形弯折部具有水平部和竖直部,水平部和竖直部仅是就其相对位置而言,水平部与竖直部之间的夹角不局限于90度。其中,除了水平部在顶表面上的接触面a外,水平部还包括设置于塑封层130的一个侧表面上的接触面b,即与基板100的导热层1200垂直的接触面。引脚120的竖直部全部嵌入塑封层130中,引脚120的水平部嵌入塑封层130中,且引脚120的水平部的顶表面与水平部的一个侧表面分别暴露于塑封层130的顶表面和多个侧表面的其中之一。
在图3中,以两个引脚为例示意,两个引脚120分别设置于功率转换电路的封装模块10相对的两侧,其各自的接触面b分别位于两个相对的侧表面上。但本发明不以此为限,例如也可以仅包括一个引脚,接触面暴露于塑封层130的顶表面和一个侧表面上;或者还可以包括多于两个引脚,其各自的接触面分别暴露于塑封层130的顶表面及与多个侧表面上。
此外,引脚120例如可以由引线框架制成,或者引脚120为铜柱,该铜柱通过导电粘接材料与基板上的金属层电性连接。
从上述内容可以看出,本发明实施例一的功率转换电路的封装模块10通过将引脚从远离基板下表面的一侧引出,实现电、热的分离,有利于功率转换电路的封装模块在工作时的散热,并因为不会散热到系统板,节省了系统板散热所需要的空间,且不会影响到系统板上其他单元的工作;此外,由于引脚120整体在封装体的内部,有效提升了封装体本身的利用效率。
图4为本发明实施例二的功率转换电路的封装模块的剖面图。如图4所示,本发明实施例二的功率转换电路的封装模块20与图3所示的功率转换电路的封装模块10的区别在于功率器件芯片110与基板100的电连接方式不同。功率转换电路的封装模块20中的功率器件芯片110还可以通过倒装芯片(flip chip)的方式与基板100电连接。在功率器件芯片110的焊盘上制作金属凸点(bump)260,再通过金属凸点260与基板110电连接。通常,针对平面形功率器件芯片采用倒装芯片的方式电连接,但本发明不限于此。
实施例二的功率转换电路的封装模块20与实施例一的功率转换电路的封装模块10相同的内容,在此不再赘述。
图5为本发明实施例三的功率转换电路的封装模块的剖面图。如图5所示,本发明实施例三的功率转换电路的封装模块30与图3所示的功率转换电路的封装模块10的区别也在于功率器件芯片110与基板100的电连接方式不同。功率转换电路的封装模块30中的功率器件芯片110还可以通过金属条370,例如铜条(cooper clip)与基板100电连接。可以先通过焊接或者烧结银等材料将金属条370与功率器件芯片110电连接,再将金属条370与基板110电连接。此外,金属条370也可以是基板110的一部分,本发明不以此为限。
实施例三的功率转换电路的封装模块30与实施例一的功率转换电路的封装模块10相同的内容,在此不再赘述。
图6为本发明实施例四的功率转换电路的封装模块的剖面图。如图6所示,本发明实施例四的功率转换电路的封装模块40与图3所示的功率转换电路的封装模块10的区别在于引脚420与引脚120的形状不同。引脚420为一柱状形状,仅包括暴露于塑封层130的顶表面的接触面a。在其他实施例中,引脚为倒L型,且引脚仅其水平部位于塑封层的侧表面的接触面曝露出,而水平部对应于顶表面的表面部分被较薄的塑封层覆盖住。实施例四的功率转换电路的封装模块40与实施例一的功率转换电路的封装模块10相同的内容,在此不再赘述。
图7为本发明实施例五的功率转换电路的封装模块的剖面图。如图7所示,本发明实施例五的功率转换电路的封装模块50与图3所示的功率转换电路的封装模块10的区别仅在于引脚620的设计。相比于图3中的引脚120,引脚520的水平部的厚度小于引脚520的竖直部的宽度。这样的设计,可增强了引脚的柔性,降低其在塑封时在塑封模具上产生的的应力。
实施例五的功率转换电路的封装模块50与实施例一的功率转换电路的封装模块10相同的内容,在此不再赘述。
图8为本发明实施例六的功率转换电路的封装模块的剖面图。如图8所示,本发明实施例六的功率转换电路的封装模块60与图3所示的功率转换电路的封装模块10的区别也仅在于引脚620的设计。相比于图3中的引脚120,在引脚620的水平部和竖直部相交的部分设置了一个局部凹槽,这样的设计一方面使得引脚的加工更为容易,即使相交部分转角位置的控制更加精准,从而增加加工精度;另一方面,也可以增加引脚的柔性,降低其在塑封时在塑封模具上产生的应力。
实施例六的功率转换电路的封装模块60与实施例一的功率转换电路的封装模块10相同的内容,在此不再赘述。
图9为本发明一个实施例的功率转换电路的封装模块制造方法中整体塑封后的塑封体的俯视图。图10为沿图9中AA’线的剖面图。如图9和图10所示,进行整体塑封对塑封模具的要求明显降低,即使功率转换电路的封装模块的尺寸改变,也无须更新塑封模具,并具有通用性,为功率转换电路的封装模块的制造降低了生产成本。
图10中仍以直接敷铜陶瓷基板为例,其中每个功率转换电路的封装模块内部的结构与图3中的结构基本相同,在此不再赘述。
从图10中可以看出,虚线为功率转换电路的封装模块之间的切割线,即沿着该虚线进行切割后,将该整体的塑封体切割成多个功率转换电路的封装模块。为了增加设置、连接引脚的稳定度,简化制造工艺,优选地,相邻两个功率转换电路的封装模块的引脚采用一体式结构,从而在切割后,在功率转换电路的封装模块的侧表面上会出现图3中的接触面b,但本发明不以此为限。
同样,图10中也以两个引脚为例示意,两个引脚分别设置于每个功率转换电路的封装模块90相对的两侧。但本发明不以此为限,例如若干引脚均位于功率转换电路的封装模块的同一边,接触面暴露于功率转换电路的封装模块的顶表面和与顶表面相交的一个侧表面上;或者若干引脚分布于功率转换电路的封装模块不同的边,其各自的接触面分别暴露于功率转换电路的封装模块的顶表面及与顶表面相交的侧表面上。
本发明还公开了一种制造上述封装模块的方法,包括:
步骤a:将未封装的功率转换电路制作为矩阵排列的形式;
步骤b:用塑封层将功率转换电路带器件的一面包封起来;
步骤c:使功率转换电路中引脚的接触面从塑封层中曝露出;
步骤d:分割包封后的矩阵排列的功率转换电路为单个独立的功率转换电路的封装模块。
图11A至图11D为本发明一个实施例的功率转换电路的封装模块制造方法的流程示意图。该方法包括:
步骤a:如图11A所示,提供一张连片式的基板1,以直接敷铜陶瓷基板为例,其包括:金属层11,绝缘层12及第三铜层13。
步骤b:如图11B所示,在连片式基板1上设置功率器件芯片2及连片式引脚3,并使功率器件芯片2、连片式引脚3及基板1之间电连接,例如通过键合材料6(如导电胶、钎料、烧结材料、扩散焊接材料等)实现与基板1的电/机械/热连接;还可以通过键合线5以引线键合方式实现与基板1的电/机械/热连接,本发明不以此为限。
步骤c:如图11C所示,对基板1、功率器件芯片2及连片式引脚3整体进行塑封,形成整体的塑封层4,将基板1、功率器件芯片2及连片式引脚3包裹于其中;并且,连片式引脚3的顶表面暴露于整体的塑封层4的顶表面上。
步骤d:如图11D所示,切割整体的塑封层4及连片式引脚3,使基板1及塑封层4’彼此之间分离,例如沿图中虚线继续切割,以形成多个独立的功率转换电路的封装模块。
在一些实施例中,在切割整体的塑封层4及连片式引脚3之前还可以进行预切割,以利于其后的整体切割。
图12为本发明另一个实施例的功率转换电路的封装模块制造方法中整体塑封后的塑封体的俯视图。图13为沿图12中AA’线的剖面图。与图9和图10中的制造方法不同的是,本实施例中的基板不是连片式的基板,而是多个单颗的基板1,通过采用连片式引脚将多个矩阵排列式的独立基板连接起来。该连片式引脚可以是如图12所示整体式的引脚框架3。;对基板进行上述的功率器件芯片2的贴装、电连接以及引脚3’的安装等工艺;之后对基板1、功率器件芯片2及引脚3’整体进行塑封,形成整体的塑封层4;再通过切割整体的塑封层4及引脚3’,使基板1及塑封层4’彼此之间分离,例如沿图中虚线继续切割,以形成多个独立的功率转换电路的封装模块。通过该制造方法,可以使每个功率转换电路的封装模块基板的侧表面也封装到封装体内,利于保护基板的侧面。
需要说明的是上述方法步骤仅为示例性说明,而并非用以限制本发明方法的执行顺序。在可实施的情况下,本发明方法步骤可以任意顺序进行。
在如图10所示的整体塑封体结构中,除了上述公开的引脚结构外,图14还列举了其他几种引脚结构。从图14中可以看出,这几种引脚结构在以图14中所示虚线的位置切割后的共同点为:切割后引脚至少有两端,一端与基板连接,另一端作为接触面而连接系统板。这些结构的引脚也利于做成连片式引脚结构,方便引脚的电连接和后续引脚的切割。。
本发明公开的功率转换电路的封装模块制造方法,采用连片式的塑封方式,这种整体塑封的方式对塑封模具的要求明显降低,即使功率转换电路的封装模块的尺寸改变,也无须更新塑封模具,并具有通用性,为功率转换电路的封装模块的制造降低了生产成本。
以上具体地示出和描述了本发明的示例性实施方式。应该理解,本发明不限于所公开的实施方式,相反,本发明意图涵盖包含在所附权利要求范围内的各种修改和等效置换。
Claims (16)
1.一种功率转换电路的封装模块,所述功率转换电路的封装模块可表面贴装于一系统板,其特征在于,所述功率转换电路的封装模块包括:
基板,所述基板具有金属层、绝缘基板层和导热层,所述绝缘基板层位于所述金属层和所述导热层之间;
功率器件芯片,所述功率器件芯片连接所述金属层;
塑封层,所述基板的金属层上的所有器件埋入所述塑封层;以及
多个引脚,所述多个引脚电性连接所述金属层且埋入所述塑封层,至少露出所述引脚与所述系统板的电性连接的接触面,所述接触面平行和/或垂直所述导热层;
其中,所述基板的导热层对与所述金属层相连的需散热的器件进行散热。
2.根据权利要求1所述的封装模块,其中所述引脚为引线框架制成。
3.根据权利要求1所述的封装模块,其中所述引脚为铜柱,所述铜柱通过导电粘接材料与所述金属层电性连接。
4.根据权利要求1所述的封装模块,其中所述塑封层至少包封所述基板的金属层,曝露所述基板的导热层。
5.根据权利要求1所述的封装模块,还包括金属连接体,所述金属连接体埋入所述塑封层。
6.根据权利要求5所述的封装模块,其中所述金属连接体为键合线,所述键合线电连接所述功率器件芯片或者所述功率器件芯片与所述金属层。
7.根据权利要求5所述的封装模块,其中所述金属连接体为铜条,所述铜条电连接所述功率器件芯片或者所述功率器件芯片与所述金属层。
8.根据权利要求5所述的封装模块,其中所述金属连接体为金属凸点,所述功率器件芯片反扣于所述金属凸点,实现所述功率器件芯片与所述金属层的电性连接。
9.根据权利要求1所述的封装模块,其中所述基板为金属化陶瓷基板或者绝缘金属基板。
10.根据权利要求1所述的封装模块,其中所述引脚包括至少一L型金属部,所述L型金属部由竖直部和水平部构成;所述引脚曝露的接触面位于所述水平部。
11.一种制造权利要求1所述的功率转换电路的封装模块的方法,其中所述制造方法包括:
步骤a:将未封装的功率转换电路制作为矩阵排列的形式;
步骤b:用塑封层将所述功率转换电路带器件的一面包封起来;
步骤c:使所述功率转换电路中引脚的接触面从所述塑封层中曝露出;
步骤d:分割包封后的矩阵排列的功率转换电路为单个独立的功率转换电路的封装模块。
12.根据权利要求11所述功率转换电路的封装模块的方法,其中步骤a包括:
步骤a1:制作连片式基板;
步骤a2:完成所述连片式基板上功率器件芯片的安装和连片式引脚的连接。
13.根据权利要求12所述的方法,其中步骤d包括:
步骤d1:预切割所述连片式基板;
步骤d2:切割所述连片式引脚和所述塑封层。
14.根据权利要求11所述的方法,其中步骤a包括:
步骤a1:将若干基板形成矩阵式摆放;
步骤a2:完成所述若干基板上功率器件芯片的安装和连片式引脚的连接。
15.根据权利要求14所述的方法,其中步骤d中分割包括分割所述连片式引脚和所述塑封层。
16.根据权利要求12或14的方法,其中所述连片式引脚为引线框架制作。
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