CN113035792A - 具有模制金属互连基板的功率模块及其制造方法 - Google Patents

具有模制金属互连基板的功率模块及其制造方法 Download PDF

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Publication number
CN113035792A
CN113035792A CN202011396197.7A CN202011396197A CN113035792A CN 113035792 A CN113035792 A CN 113035792A CN 202011396197 A CN202011396197 A CN 202011396197A CN 113035792 A CN113035792 A CN 113035792A
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China
Prior art keywords
metal
metal pads
interconnect substrate
layer
composite layer
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CN202011396197.7A
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Inventor
牛志强
徐范锡
王隆庆
松·德兰
李俊鎬
何约瑟
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Alpha and Omega Semiconductor Cayman Ltd
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Alpha and Omega Semiconductor Cayman Ltd
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Publication of CN113035792A publication Critical patent/CN113035792A/zh
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Abstract

一种互连基板，包括一个金属层、多个金属焊盘以及一个模塑封装。模制复合层封装多个金属焊盘240的绝大部分。多个金属焊盘中每个金属焊盘各自的顶面暴露于模塑封装的顶面。第一多个金属焊盘中每个金属焊盘各自的顶面，与模制复合层的顶面是共面的。功率模块包括互连基板、多个芯片、多个接合引线、多个端子、一个塑料外壳以及一个模块级模塑封装。一种用于制备互连基板的方法包括以下步骤：制备多个金属焊盘；加载一个金属层；制备一个模塑封装；以及使用一个分割工艺。

Description

具有模制金属互连基板的功率模块及其制造方法
技术领域
本发明主要涉及一种具有模制金属的互连基板及其制造方法。更确切地说，本发明涉及一种具有模制金属互连基板的功率模块。
背景技术
图1A表示含有多个绝缘金属基板120的传统的功率模块100的俯视图，图1B表示其沿AA’线的剖面图。多个绝缘金属基板120包括一个第一板120A、一个第二板120B以及一个第三板120C。第一板120A、第二板120B和第三板120C都是矩形形状，因此没有延伸到周围边界区160、162、164和166上。第一板120A通过第一缝隙140A与第二板120B隔开。第二板120B通过第二缝隙140B与第三板120C隔开。多个芯片133安装在底部金属层137上。图1C表示另一种传统的功率模块101的剖面图。底部金属层172通过绝缘层190，与顶部金属层174隔开。顶部金属层174为矩形形状，没有延伸到周围的边界区161和165上。
本发明的一个应用是电源逆变模块，包括一个互连基板，电流范围为25安培到200安培；电压为600伏或1200伏；尺寸为107毫米×45毫米×17毫米或122毫米×62毫米×17毫米。电气路径和电气焊盘嵌入模塑封装中。根据预先确定的填料百分比和填料类型，调整模塑料层的热膨胀系数(CTE)，使其接近铜材料的CTE。因此，互连基板中产生的热应力减小。功率转换模块具有高功率能力和高热循环能力(从-40摄氏度到125摄氏度，可进行数千次循环)。芯片安装面积增加了23％。路径电感减小。降低了制造成本。
发明内容
本发明提出了一种互连基板，包括一个金属层、多个金属焊盘以及一个模塑封装。模制复合层包围了多个金属焊盘的绝大部分。多个金属焊盘中的每个金属焊盘各自的顶面，都暴露于模塑封装的顶面。第一多个金属焊盘中每个金属焊盘的各自的顶面，与模制复合层的顶面是共面的。功率模块包括互连基板、多个芯片、多个接合引线、多个端子、一个塑料外壳以及一个模块级模塑封装。
本文还提出了一种互连基板的制造方法。该方法包括以下步骤：制备多个金属焊盘；加载一个金属层；制备一个模塑封装；并且使用一个分割工艺。
附图说明
图1A表示一种传统的功率模块的俯视图，图1B表示其剖面图。图1C表示另一种传统的功率模块的剖面图。
图2A表示在本发明的示例中，一种功率模块的俯视图，图2B表示其透视图。
图3表示在本发明的示例中，图2A所示的功率模块沿BB’线的剖面图。
图4表示在本发明的示例中，另一种功率模块的剖面图。
图5表示在本发明的示例中，制备一种互连基板的工艺流程图。
图6A、6B、6C、6D、6E、6F、6G、6H、6I和6J表示在本发明的示例中，制备一种互连基板的工艺步骤。
图7表示在本发明的示例中，制备一种互连基板的工艺流程图。
具体实施方式
图2A表示在本发明的示例中，功率模块200的俯视图，图2B表示其透视图。功率模块200包括一个互连基板220。互连基板220不仅限于就像图1A所示的传统的功率模块100的多个绝缘金属基板120那样的矩形形状。互连基板220并不要求如图1A所示，由第一缝隙140A和第二缝隙140B分开。如图1A所示，互连基板220可以延伸到边界区160、162、164和166上。
图3表示在本发明的示例中，图2A所示的功率模块200沿BB’线的剖面图。功率模块200包括一个互连基板220、多个芯片280、第一多个接合引线290、第二多个接合引线291、多个端子292、一个塑料外壳294以及一个模块级模塑封装296。在本发明的示例中，模块级模塑封装296形成在来自制备模制复合层260的成型工艺的不同成型过程中。如图所示，塑料外壳294包括排布在互连基板外围的多个侧壁。
互连基板220包括一个底部金属板230，穿过整个互连基板220、多个金属路径241、在中心区域的第一多个金属焊盘240以及在边缘区域中的第二多个金属焊盘250，边缘区域嵌入在模制复合层260中，覆盖着金属层230。在本发明的示例中，底部金属板230为矩形的棱柱形。模制复合层260为矩形的棱柱形。第二多个金属焊盘250导电连接到多个端子292上。模制复合层260封装了第一多个金属焊盘240的绝大部分和多个金属路径241的绝大部分。模制复合层260封装了第二多个金属焊盘250的绝大部分。模制复合层260的整个底面262直接连接到金属层230的顶面232上。模制复合层覆盖了底部金属板的整个中心区域，并且延伸以触及塑料外壳294的侧壁。模制复合层260的边缘基本对准到塑料外壳294的内部侧壁，以提供将塑料外壳294装配到互连基板220时的自适配优点。第一多个金属焊盘240中的每一个金属焊盘的上表面242都从模制复合层260的顶面264暴露。所述第一多个金属焊盘240中的每一个金属焊盘的上表面242和模制复合层260的顶面264都是共面的。金属路径241、第一多个金属焊盘240和第二个多个金属焊盘250优选地具有100到800微米之间的相同厚度，相邻金属焊盘或与模制复合层260归档的路径之间的最小间距为400微米。优选地，金属路径241、第一多个栅极焊盘240以及第二多个金属焊盘250下方的模制复合层260的厚度为100微米到250微米之间，以便与底部金属板230绝缘。模制复合层260的长度(沿X方向)短于金属层230的长度(沿X方向)。模制复合层260的宽度(沿Y方向)短于金属层230的宽度(沿Y方向)。
多个芯片280中的每一个芯片都通过多个导电材料282中的相应导电材料，连接到第一多个金属焊盘240的相应金属焊盘上。在一个示例中，多个导电材料282为焊锡膏。在另一示例中，多个导电材料282为导电粘合剂。模块级模塑封装296封装多个芯片280、第一多个接合引线290、第二多个接合引线291、多个端子292的一部分和塑料外壳294的内部部分。多个端子292中的每一个端子的底面293都直接连接到塑料外壳294上。模制复合层260的顶面264直接连接到塑料外壳294上。
在本发明的示例中，底部金属板230是由第一铜材料制成的。第一多个金属焊盘240和第二多个金属焊盘250是由第二铜材料制成的。在一个示例中，第一铜材料和第二铜材料都是相同的铜材料。在另一个示例中，第一铜材料和第二铜材料是不同的铜合金。
在本发明的示例中，模制复合层260是单独的整体结构，形成在如图6I所示的单独的成型工艺中。在本发明的示例中，模制复合层260是由树脂或凝胶制成的。
在本发明的示例中，模制复合层260是由一种树脂制成的，该树脂包括从含有氧化硅(SiO2)、氧化铝(Al2O3)以及氮化铝(AlN)组分中选取的一种或多种填充材料。在本发明的示例中，一种或多种填充材料的填充率范围在80％到90％之间。在第一个示例中，模制复合层260含有80％的氧化硅填充物。在第二个示例中，模制复合层260含有85％的氧化铝填充物。在第三个示例中，模制复合层260含有90％的氮化铝填充物。在第四个示例中，模制复合层260含有20％的氧化硅填充物、30％的氧化铝填充物以及40％的氮化铝填充物。在本发明的示例中，确定填充物的百分比和填充物的类型，是为了调节模制复合层260的热膨胀系数(CTE)。在一个示例中，带有填充物的模制复合层260的CTE，在金属层230的CTE的99％至101％之间的范围内。在另一个示例中，带有填充物的模制复合层260的CTE，在金属层230的CTE的95％至105％之间的范围内。
在本发明的示例中，第一多个金属焊盘240中每个金属焊盘的厚度，都小于模制复合层260的厚度。第二多个金属焊盘250中每个金属焊盘的厚度，都小于模制复合层260的厚度。
在本发明的示例中，底部金属板230的厚度范围为500微米(0.5毫米)至800微米(0.8毫米)。
在本发明的示例中，模制复合层260的热导率范围为5瓦特/米开尔文至10瓦特/米开尔文。
在本发明的示例中，第二多个金属焊盘250都通过第二多个接合引线291，导电连接到多个端子292上。
图4表示在本发明的示例中，功率模块400的剖面图。功率模块400包括一个互连基板220、多个芯片280、第一多个接合引线290、多个导电板491、多个端子292、一个塑料外壳294以及一个模块级模塑封装296。
互连基板220包括一个金属层230、第一多个金属焊盘240、第二多个金属焊盘250以及一个模制复合层260。在本发明的示例中，底部金属板230为矩形的棱柱形。模制复合层260为矩形的棱柱形。第二多个金属焊盘250导电连接到多个端子292上。模制复合层260封装第一多个金属焊盘240的绝大部分。模制复合层260的底面262平行于金属层230的顶面232，并直接连接到顶面232上。第一多个金属焊盘240中的每个金属焊盘各自的顶面242，都暴露于模制复合层260的顶面264上。第一多个金属焊盘240中每个金属焊盘各自的顶面242，以及模制复合层260的顶面264是共面的。模制复合层260的长度(沿X方向)短于金属层230的长度(沿X方向)。模制复合层260的宽度(沿Y方向)短于金属层230的宽度(沿Y方向)。
在本发明的示例中，第二多个金属焊盘250通过多个导电板491，导电连接到多个端子292上。在一个示例中，第二多个金属焊盘250中相应的一个金属焊盘、多个导电板491相应的一个导电板、以及多个端子292相应的一个端子是一体成型结构(在相同的金属制备工艺中制成)。在另一个示例中，第二多个金属焊盘250中相应的一个金属焊盘、多个导电板491中相应的一个导电板以及多个端子292中相应的一个端子，是三体成型结构(在三个分开的金属成形过程中制造，然后彼此连接)。
图5表示在本发明的示例中，制备一个互连基板的工艺500的流程图。在一个示例中，互连基板的制备从一个面板开始。该面板为矩形形状。几百个或几千个相互连接的底板是由一个单独的面板制成的。工艺500可以从方框502开始。图6A-6J表示相应步骤的剖面图。为简单起见，图6A-6I中的面板中仅显示一个互连基板。图6J虚线中的右侧(与实线中对应的左侧结构相同)没有表示在图6A-6I中。
在方框502中，参见图6A，提供了一个可拆卸的托架610。在一个示例中，可拆卸的托架610为矩形的棱柱形。方框502后面可以是方框504。
在方框504中，参见图6B，胶带层620连接到可拆卸的托架610上。在本发明的示例中，胶带层620是双面胶带。胶带层620被压到可拆卸的托架上。方框504后面可以是方框506。
在方框506中，参见图6C，金属片630连接到胶带层620上。在本发明的示例中，金属片630由铜材料制成。方框506后面可以是方框508。
在方框508中，参见图6D，干薄膜640连接到金属片630上。方框508后面可以是方框510。
在方框510中，参见图6E，刻蚀图6D所示的干薄膜，以便形成多个刻蚀后的干薄膜640P。方框510后面可以是方框512。
在方框512中，参见图6F，刻蚀图6E所示的金属片630，以便形成多个被刻蚀后的干薄膜640P覆盖保护下的金属焊盘630P。方框512后面可以是方框514。
在方框514中，参见图6G，除去多个刻蚀后的干薄膜640P，以便露出多个金属焊盘630P，形成一个预成型的中间元件651。方框514后面可以是方框516。
在方框516中，参见图6H，金属板660和预成型的中间元件651加载到成型槽669上。金属焊盘630P面向金属板660，带有100至800微米预置的空间，将金属焊盘630P和金属板660分开。方框516后面可以是方框518。
在方框518中，参见图6I，通过注入模制复合层680，填充金属板660、金属焊盘630P和胶带层620之间的空间，形成一个成型互连基板组件。模制复合层680封装了多个金属焊盘630P的绝大部分。模制复合层680直接连接到金属层660上。方框518后面可以是方框520。
在方框520中，参见图6J，从成型槽669上除去成型互连基板之后，再除去胶带层620以及可拆卸的托架610。翻转Z方向的观察方向(模制复合层680在图6I所示的金属层660下方，模制复合层680在图6J所示的金属层660上方)。方框520后面可以是方框522。
在方框522中，一个分割工艺691将图6J所示的互连基板699与虚线所示的周围的互连基板697分开。还可选择，在半导体芯片安装在互连基板的整个面板上，并且/或者塑料外壳安装在互连基板的面板上之后，再进行分割工艺。
图7表示在本发明的示例中，制备一个功率模块的工艺700的流程图。在一个示例中，在使用图5方框522中所示的分割工艺步骤之前，进行工艺700。工艺700从方框702开始。
在方框702中，图3所示的多个芯片280连接到图6J所示的多个金属焊盘630P上。方框702后面可以是方框704。
在方框704中，图3所示的塑料外壳294连接到图6J所示的金属板660上。方框704后面可以是方框706。
在方框706中，图3所示的多个端子292连接到图3所示的塑料外壳294上。方框706后面可以是方框708。
在方框708中，图3所示的第一多个接合引线290接合到图3所示的多个芯片280上。方框708后面可以是方框710。
在方框710中，制备图3所示的模块级模塑封装296。图3所示的模块级模塑封装296封装了图3所示的多个芯片280、图3所示的第一多个接合引线290、图3所示的多个端子292的一部分以及图3所示的塑料外壳492的一部分。
本领域的普通技术人员可以理解，可能存在本发明公开的实施例的修改。例如，多个端子292的数量可以改变。本领域普通技术人员还可以想到其他修改，并且所有这样的修改被认为属于本发明的范围之内，如同权利要求所限定的那样。

Claims (16)

1.一种半导体模块封装包括：
一个互连基板；
一个塑料外壳，包括多个放置在互连基板外围的侧壁；以及
多个端子，沿多个侧壁放置，从互连基板开始向外延伸；
其中互连基板包括：
一个底部金属板；
一个模制复合层，至少覆盖底部金属板的中心部分；
第一多个金属焊盘，嵌入在模制复合层中；以及
第二多个金属焊盘，嵌入在模制复合层中，导电连接到多个端子上；
其中模制复合层封装第一多个金属焊盘的底部和边缘面；并且
第一多个金属焊盘的底面通过模制复合层的一个厚度，与底部金属板分开。
2.如权利要求1所述的半导体模块封装，其中底部金属板延伸到互连基板的整个区域上。
3.如权利要求2所述的半导体模块封装，
其中模制复合层的底面直接连接到底部金属板的顶面上；并且其中模制复合层覆盖底部金属板的整个中心区域，一直延伸到塑料外壳的侧壁为止。
4.如权利要求3所述的半导体模块封装，
其中第一多个金属焊盘中每个金属焊盘各自的顶面暴露于模制复合层的顶面；并且
其中第一多个金属焊盘中所述的每个金属焊盘各自的顶面，与模制复合层的顶面是共面的。
5.如权利要求1所述的半导体模块封装，其中底部金属板是由第一铜材料制成的。
其中模制复合层是一个单独的整体结构；
其中模制复合层是由树脂制成的；并且
其中第一多个金属焊盘和第二多个金属焊盘是由第二铜材料制成的。
6.如权利要求1所述的半导体模块封装，其中模制复合层是由树脂制成的，该树脂含有从氧化硅、氧化铝和氮化铝的组分中选取的一种或多种填充材料；并且
其中所述的一种或多种填充材料的填充率范围为80％至90％。
7.如权利要求1所述的半导体模块封装，其中底部金属板的厚度范围为500微米至800微米。
8.如权利要求1所述的半导体模块封装，其中模制复合层的热导率范围为5瓦特/米开尔文至10瓦特/米开尔文。
9.如权利要求1所述的半导体模块封装，其中第二多个金属焊盘通过多个接合引线，导电连接到多个端子上。
10.如权利要求1所述的半导体模块封装，其中第二多个金属焊盘通过多个导电板，导电连接到多个端子上。
11.如权利要求1所述的半导体模块封装，其中第二多个金属焊盘中相应的一个金属焊盘、多个导电板中相应的一个导电板以及多个端子中相应的一个端子都是一体成型结构。
12.如权利要求1所述的半导体模块封装，还包括：
多个半导体芯片，多个半导体芯片中的每个芯片都通过各自的导电材料，连接到第一多个金属焊盘中各自的金属焊盘上；
多个接合引线；以及
一个模塑封装，封装多个芯片、多个接合引线、多个端子的一部分以及塑料外壳的一部分。
13.一种用于制备互连基板的方法，该方法包括以下步骤：
制备一个可拆卸的托架；
将一个胶带层连接到可拆卸的托架上；
将一个金属片连接到胶带层上；
将一个干薄膜连接到金属片上；
刻蚀干薄膜，以便形成多个刻蚀后的干薄膜；
刻蚀金属片，以便形成多个金属焊盘；
除去多个刻蚀后的干薄膜，以便形成一个预成型的中间元件；
将一个金属板和预成型的中间元件加载到一个成型槽上，金属焊盘面向金属板，在它们之间有一个预置空间；
通过将一个模制复合层注入到金属板、多个金属焊盘和胶带层之间的填充空间内，模制复合层封装多个金属焊盘的绝大部分，制成一个模制互连基板；并且
从成型槽上除去模制互连基板组件之后，除去胶带层以及可拆卸的托架。
14.如权利要求13所述的方法，还包括在除去胶带层和可拆卸的托架之后，应用分割工艺将互连基板从邻近的互连基板上分开的一个步骤。
15.如权利要求13所述的方法，其中金属板是由第一铜材料制成的；
其中模制复合层是由树脂制成的；并且
其中多个金属焊盘是由第二铜材料制成的。
16.如权利要求13所述的方法，其中多个金属焊盘中每个金属焊盘的厚度小于模制复合层的厚度。
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