CN105981170B - 具有半导体芯片端子的dc-dc转换器 - Google Patents

具有半导体芯片端子的dc-dc转换器 Download PDF

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Publication number
CN105981170B
CN105981170B CN201580007418.8A CN201580007418A CN105981170B CN 105981170 B CN105981170 B CN 105981170B CN 201580007418 A CN201580007418 A CN 201580007418A CN 105981170 B CN105981170 B CN 105981170B
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China
Prior art keywords
pad
terminal
chip
field effect
effect transistor
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Chinese (zh)
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CN105981170A (zh
Inventor
奥斯瓦尔多·乔治·洛佩斯
乔纳森·阿尔梅里亚·努吉尔
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Texas Instruments Inc
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Texas Instruments Inc
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Priority claimed from US14/173,147 external-priority patent/US9184121B2/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to CN201911107083.3A priority Critical patent/CN110911377B/zh
Publication of CN105981170A publication Critical patent/CN105981170A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
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    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
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    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
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    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
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    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
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    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
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    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
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    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
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    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
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    • H10W72/075—Connecting or disconnecting of bond wires
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    • H—ELECTRICITY
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
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    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
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    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
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    • H10W90/00—Package configurations
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    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
CN201580007418.8A 2014-02-05 2015-02-05 具有半导体芯片端子的dc-dc转换器 Active CN105981170B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911107083.3A CN110911377B (zh) 2014-02-05 2015-02-05 具有半导体芯片端子的dc-dc转换器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/173,147 2014-02-05
US14/173,147 US9184121B2 (en) 2014-02-05 2014-02-05 Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US14/481,204 2014-09-09
US14/481,204 US9171828B2 (en) 2014-02-05 2014-09-09 DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
PCT/US2015/014655 WO2015120173A1 (en) 2014-02-05 2015-02-05 Dc-dc converter having terminals of semiconductor chips

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CN105981170A CN105981170A (zh) 2016-09-28
CN105981170B true CN105981170B (zh) 2019-12-10

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US (4) US9171828B2 (enExample)
EP (1) EP3130009B1 (enExample)
JP (1) JP6509885B2 (enExample)
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WO (1) WO2015120173A1 (enExample)

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US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
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JP6011737B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 降圧チョッパ回路
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US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
US11742267B2 (en) * 2020-10-12 2023-08-29 Toyota Motor Engineering And Manufacturing North America, Inc. Power electronics assembly having flipped chip transistors
EP4057341A1 (en) * 2021-03-12 2022-09-14 Nexperia B.V. Packaged half-bridge circuit
DE102021133665A1 (de) 2021-12-17 2023-06-22 Infineon Technologies Ag Halbleitervorrichtung mit einem Premolded-Leadframe und einem Halbleiterpackage
US12261101B2 (en) * 2022-06-28 2025-03-25 Alpha And Omega Semiconductor International Lp Semiconductor package having wettable lead flanks and tie bars and method of making the same
IT202300006201A1 (it) * 2023-03-30 2024-09-30 St Microelectronics Int Nv Modulo di potenza multi-livello con effetti parassitici ridotti

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US20170077017A1 (en) 2017-03-16
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US9543240B2 (en) 2017-01-10
US20160218054A1 (en) 2016-07-28
EP3130009B1 (en) 2020-10-28
CN105981170A (zh) 2016-09-28
US20150318233A1 (en) 2015-11-05
US10930582B2 (en) 2021-02-23
CN110911377A (zh) 2020-03-24
EP3130009A1 (en) 2017-02-15
US9171828B2 (en) 2015-10-27
US20150221622A1 (en) 2015-08-06
US9305872B2 (en) 2016-04-05
CN110911377B (zh) 2022-07-22

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