JP6509885B2 - 半導体チップの端子を有するｄｃ−ｄｃコンバータ - Google Patents

半導体チップの端子を有するｄｃ−ｄｃコンバータ Download PDF

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Publication number
JP6509885B2
JP6509885B2 JP2016550585A JP2016550585A JP6509885B2 JP 6509885 B2 JP6509885 B2 JP 6509885B2 JP 2016550585 A JP2016550585 A JP 2016550585A JP 2016550585 A JP2016550585 A JP 2016550585A JP 6509885 B2 JP6509885 B2 JP 6509885B2
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Prior art keywords
chip
fet
terminal
pad surface
pad
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Japanese (ja)
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JP2017506432A (ja
JP2017506432A5 (enExample
Inventor
ジョージ ロペス オスバルド
ジョージ ロペス オスバルド
アルメリア ノクイル ジョナサン
アルメリア ノクイル ジョナサン
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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Priority claimed from US14/173,147 external-priority patent/US9184121B2/en
Application filed by 日本テキサス・インスツルメンツ合同会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ合同会社
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Publication of JP2017506432A5 publication Critical patent/JP2017506432A5/ja
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    • H10W90/811—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H10W70/411—
    • H10W70/424—
    • H10W70/427—
    • H10W70/461—
    • H10W70/465—
    • H10W70/466—
    • H10W70/481—
    • H10W72/00—
    • H10W72/60—
    • H10W74/012—
    • H10W74/111—
    • H10W74/15—
    • H10W90/00—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/07337—
    • H10W72/074—
    • H10W72/075—
    • H10W72/076—
    • H10W72/07636—
    • H10W72/325—
    • H10W72/354—
    • H10W72/5445—
    • H10W72/5449—
    • H10W72/652—
    • H10W72/655—
    • H10W72/871—
    • H10W72/884—
    • H10W74/00—
    • H10W90/736—
    • H10W90/753—
    • H10W90/756—
    • H10W90/763—
    • H10W90/766—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Dc-Dc Converters (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2016550585A 2014-02-05 2015-02-05 半導体チップの端子を有するｄｃ−ｄｃコンバータ Active JP6509885B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/173,147 2014-02-05
US14/173,147 US9184121B2 (en) 2014-02-05 2014-02-05 Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US14/481,204 US9171828B2 (en) 2014-02-05 2014-09-09 DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US14/481,204 2014-09-09
PCT/US2015/014655 WO2015120173A1 (en) 2014-02-05 2015-02-05 Dc-dc converter having terminals of semiconductor chips

Publications (3)

Publication Number Publication Date
JP2017506432A JP2017506432A (ja) 2017-03-02
JP2017506432A5 JP2017506432A5 (enExample) 2018-03-15
JP6509885B2 true JP6509885B2 (ja) 2019-05-08

Family

ID=53755485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550585A Active JP6509885B2 (ja) 2014-02-05 2015-02-05 半導体チップの端子を有するｄｃ−ｄｃコンバータ

Country Status (5)

Country Link
US (4) US9171828B2 (enExample)
EP (1) EP3130009B1 (enExample)
JP (1) JP6509885B2 (enExample)
CN (2) CN105981170B (enExample)
WO (1) WO2015120173A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426952B2 (en) * 2011-01-14 2013-04-23 International Rectifier Corporation Stacked half-bridge package with a common conductive leadframe
JP6265415B2 (ja) * 2014-01-24 2018-01-24 住友電工デバイス・イノベーション株式会社 増幅装置
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US20170018487A1 (en) * 2015-07-15 2017-01-19 Broadcom Corporation Thermal enhancement for quad flat no lead (qfn) packages
JP6011737B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 降圧チョッパ回路
JP6011736B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 昇圧チョッパ回路
FR3073080B1 (fr) * 2017-10-26 2021-01-08 St Microelectronics Srl Circuit integre en boitier qfn
CN108345712B (zh) * 2018-01-10 2021-10-15 杭州士兰集成电路有限公司 计算半导体器件的频率与电流关系的方法和装置
US11476232B2 (en) 2019-03-25 2022-10-18 Analog Devices International Unlimited Company Three-dimensional packaging techniques for power FET density improvement
JP6709313B1 (ja) * 2019-05-31 2020-06-10 アオイ電子株式会社 半導体装置および半導体装置の製造方法
US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
US11742267B2 (en) * 2020-10-12 2023-08-29 Toyota Motor Engineering And Manufacturing North America, Inc. Power electronics assembly having flipped chip transistors
EP4057341A1 (en) * 2021-03-12 2022-09-14 Nexperia B.V. Packaged half-bridge circuit
DE102021133665A1 (de) 2021-12-17 2023-06-22 Infineon Technologies Ag Halbleitervorrichtung mit einem Premolded-Leadframe und einem Halbleiterpackage
US12261101B2 (en) * 2022-06-28 2025-03-25 Alpha And Omega Semiconductor International Lp Semiconductor package having wettable lead flanks and tie bars and method of making the same
IT202300006201A1 (it) * 2023-03-30 2024-09-30 St Microelectronics Int Nv Modulo di potenza multi-livello con effetti parassitici ridotti

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260996A (ja) * 1998-03-16 1999-09-24 Matsushita Electron Corp 光学半導体装置とその製造方法
JP2002252322A (ja) * 2001-02-21 2002-09-06 Sony Corp 電子部品実装基板及びその製造方法
US7579697B2 (en) 2002-07-15 2009-08-25 International Rectifier Corporation Arrangement for high frequency application
US6946740B2 (en) 2002-07-15 2005-09-20 International Rectifier Corporation High power MCM package
KR101297645B1 (ko) * 2005-06-30 2013-08-20 페어차일드 세미컨덕터 코포레이션 반도체 다이 패키지 및 그의 제조 방법
US20090194857A1 (en) * 2008-02-01 2009-08-06 Yong Liu Thin Compact Semiconductor Die Packages Suitable for Smart-Power Modules, Methods of Making the Same, and Systems Using the Same
US7952204B2 (en) * 2008-04-14 2011-05-31 Fairchild Semiconductor Corporation Semiconductor die packages with multiple integrated substrates, systems using the same, and methods using the same
US8148815B2 (en) 2008-10-13 2012-04-03 Intersil Americas, Inc. Stacked field effect transistor configurations
JP5614286B2 (ja) * 2009-01-28 2014-10-29 日立金属株式会社 半導体装置及び電源回路
US8358014B2 (en) * 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
CN102169873B (zh) * 2010-02-25 2013-12-11 万国半导体有限公司 一种应用于功率切换器电路的半导体封装结构
US20110210708A1 (en) * 2010-03-01 2011-09-01 Texas Instruments Incorporated High Frequency Power Supply Module Having High Efficiency and High Current
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5099243B2 (ja) * 2010-04-14 2012-12-19 株式会社デンソー 半導体モジュール
US20120200281A1 (en) * 2011-02-07 2012-08-09 Texas Instruments Incorporated Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US20120228696A1 (en) 2011-03-07 2012-09-13 Texas Instruments Incorporated Stacked die power converter
US9165865B2 (en) 2011-04-07 2015-10-20 Texas Instruments Incorporated Ultra-thin power transistor and synchronous buck converter having customized footprint
US8299588B1 (en) * 2011-07-07 2012-10-30 Texas Instruments Incorporated Structure and method for uniform current distribution in power supply module
US8760872B2 (en) * 2011-09-28 2014-06-24 Texas Instruments Incorporated DC-DC converter vertically integrated with load inductor structured as heat sink
US9048338B2 (en) * 2011-11-04 2015-06-02 Infineon Technologies Ag Device including two power semiconductor chips and manufacturing thereof
CN103107171B (zh) * 2011-11-11 2015-03-18 万国半导体股份有限公司 一种倒装芯片的半导体器件
US8883567B2 (en) 2012-03-27 2014-11-11 Texas Instruments Incorporated Process of making a stacked semiconductor package having a clip
JP5924110B2 (ja) * 2012-05-11 2016-05-25 株式会社ソシオネクスト 半導体装置、半導体装置モジュールおよび半導体装置の製造方法
US20140063744A1 (en) * 2012-09-05 2014-03-06 Texas Instruments Incorporated Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
US8976561B2 (en) * 2012-11-14 2015-03-10 Power Integrations, Inc. Switch mode power converters using magnetically coupled galvanically isolated lead frame communication
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
US9184121B2 (en) * 2014-02-05 2015-11-10 Texas Instruments Incorporated Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board

Also Published As

Publication number Publication date
JP2017506432A (ja) 2017-03-02
CN105981170B (zh) 2019-12-10
US20170077017A1 (en) 2017-03-16
EP3130009A4 (en) 2018-03-28
WO2015120173A1 (en) 2015-08-13
US9305872B2 (en) 2016-04-05
US9171828B2 (en) 2015-10-27
US20150221622A1 (en) 2015-08-06
CN105981170A (zh) 2016-09-28
US20150318233A1 (en) 2015-11-05
US10930582B2 (en) 2021-02-23
CN110911377A (zh) 2020-03-24
US20160218054A1 (en) 2016-07-28
CN110911377B (zh) 2022-07-22
EP3130009A1 (en) 2017-02-15
EP3130009B1 (en) 2020-10-28
US9543240B2 (en) 2017-01-10

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