JP6509885B2 - 半導体チップの端子を有するdc−dcコンバータ - Google Patents

半導体チップの端子を有するdc−dcコンバータ Download PDF

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JP6509885B2
JP6509885B2 JP2016550585A JP2016550585A JP6509885B2 JP 6509885 B2 JP6509885 B2 JP 6509885B2 JP 2016550585 A JP2016550585 A JP 2016550585A JP 2016550585 A JP2016550585 A JP 2016550585A JP 6509885 B2 JP6509885 B2 JP 6509885B2
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chip
fet
terminal
pad surface
pad
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JP2017506432A (ja
JP2017506432A5 (enExample
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ジョージ ロペス オスバルド
ジョージ ロペス オスバルド
アルメリア ノクイル ジョナサン
アルメリア ノクイル ジョナサン
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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US8426952B2 (en) * 2011-01-14 2013-04-23 International Rectifier Corporation Stacked half-bridge package with a common conductive leadframe
JP6265415B2 (ja) * 2014-01-24 2018-01-24 住友電工デバイス・イノベーション株式会社 増幅装置
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US20170018487A1 (en) * 2015-07-15 2017-01-19 Broadcom Corporation Thermal enhancement for quad flat no lead (qfn) packages
JP6011737B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 降圧チョッパ回路
JP6011736B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 昇圧チョッパ回路
FR3073080B1 (fr) * 2017-10-26 2021-01-08 St Microelectronics Srl Circuit integre en boitier qfn
CN108345712B (zh) * 2018-01-10 2021-10-15 杭州士兰集成电路有限公司 计算半导体器件的频率与电流关系的方法和装置
US11476232B2 (en) 2019-03-25 2022-10-18 Analog Devices International Unlimited Company Three-dimensional packaging techniques for power FET density improvement
JP6709313B1 (ja) * 2019-05-31 2020-06-10 アオイ電子株式会社 半導体装置および半導体装置の製造方法
US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
US11742267B2 (en) * 2020-10-12 2023-08-29 Toyota Motor Engineering And Manufacturing North America, Inc. Power electronics assembly having flipped chip transistors
EP4057341A1 (en) * 2021-03-12 2022-09-14 Nexperia B.V. Packaged half-bridge circuit
DE102021133665A1 (de) 2021-12-17 2023-06-22 Infineon Technologies Ag Halbleitervorrichtung mit einem Premolded-Leadframe und einem Halbleiterpackage
US12261101B2 (en) * 2022-06-28 2025-03-25 Alpha And Omega Semiconductor International Lp Semiconductor package having wettable lead flanks and tie bars and method of making the same
IT202300006201A1 (it) * 2023-03-30 2024-09-30 St Microelectronics Int Nv Modulo di potenza multi-livello con effetti parassitici ridotti

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260996A (ja) * 1998-03-16 1999-09-24 Matsushita Electron Corp 光学半導体装置とその製造方法
JP2002252322A (ja) * 2001-02-21 2002-09-06 Sony Corp 電子部品実装基板及びその製造方法
US7579697B2 (en) 2002-07-15 2009-08-25 International Rectifier Corporation Arrangement for high frequency application
US6946740B2 (en) 2002-07-15 2005-09-20 International Rectifier Corporation High power MCM package
DE112006001663T5 (de) * 2005-06-30 2008-05-08 Fairchild Semiconductor Corp. Halbleiterchip-Gehäuse und Verfahren zur Herstellung desselben
US20090194857A1 (en) * 2008-02-01 2009-08-06 Yong Liu Thin Compact Semiconductor Die Packages Suitable for Smart-Power Modules, Methods of Making the Same, and Systems Using the Same
US7952204B2 (en) * 2008-04-14 2011-05-31 Fairchild Semiconductor Corporation Semiconductor die packages with multiple integrated substrates, systems using the same, and methods using the same
US8148815B2 (en) 2008-10-13 2012-04-03 Intersil Americas, Inc. Stacked field effect transistor configurations
EP2393113A4 (en) * 2009-01-28 2013-04-24 Hitachi Metals Ltd SEMICONDUCTOR COMPONENT AND POWER SUPPLY CIRCUIT FOR THIS
US8358014B2 (en) * 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
CN102169873B (zh) * 2010-02-25 2013-12-11 万国半导体有限公司 一种应用于功率切换器电路的半导体封装结构
US20110210708A1 (en) * 2010-03-01 2011-09-01 Texas Instruments Incorporated High Frequency Power Supply Module Having High Efficiency and High Current
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5099243B2 (ja) * 2010-04-14 2012-12-19 株式会社デンソー 半導体モジュール
US20120200281A1 (en) * 2011-02-07 2012-08-09 Texas Instruments Incorporated Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US20120228696A1 (en) 2011-03-07 2012-09-13 Texas Instruments Incorporated Stacked die power converter
US9165865B2 (en) 2011-04-07 2015-10-20 Texas Instruments Incorporated Ultra-thin power transistor and synchronous buck converter having customized footprint
US8299588B1 (en) * 2011-07-07 2012-10-30 Texas Instruments Incorporated Structure and method for uniform current distribution in power supply module
US8760872B2 (en) * 2011-09-28 2014-06-24 Texas Instruments Incorporated DC-DC converter vertically integrated with load inductor structured as heat sink
US9048338B2 (en) * 2011-11-04 2015-06-02 Infineon Technologies Ag Device including two power semiconductor chips and manufacturing thereof
CN103107171B (zh) * 2011-11-11 2015-03-18 万国半导体股份有限公司 一种倒装芯片的半导体器件
US8883567B2 (en) 2012-03-27 2014-11-11 Texas Instruments Incorporated Process of making a stacked semiconductor package having a clip
JP5924110B2 (ja) * 2012-05-11 2016-05-25 株式会社ソシオネクスト 半導体装置、半導体装置モジュールおよび半導体装置の製造方法
US20140063744A1 (en) * 2012-09-05 2014-03-06 Texas Instruments Incorporated Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
US8976561B2 (en) * 2012-11-14 2015-03-10 Power Integrations, Inc. Switch mode power converters using magnetically coupled galvanically isolated lead frame communication
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US9184121B2 (en) * 2014-02-05 2015-11-10 Texas Instruments Incorporated Stacked synchronous buck converter having chip embedded in outside recess of leadframe

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US9171828B2 (en) 2015-10-27
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US9543240B2 (en) 2017-01-10

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