JP6509885B2 - 半導体チップの端子を有するｄｃ−ｄｃコンバータ - Google Patents

半導体チップの端子を有するｄｃ−ｄｃコンバータ Download PDF

Info

Publication number
JP6509885B2
JP6509885B2 JP2016550585A JP2016550585A JP6509885B2 JP 6509885 B2 JP6509885 B2 JP 6509885B2 JP 2016550585 A JP2016550585 A JP 2016550585A JP 2016550585 A JP2016550585 A JP 2016550585A JP 6509885 B2 JP6509885 B2 JP 6509885B2
Authority
JP
Japan
Prior art keywords
chip
fet
terminal
pad surface
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016550585A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017506432A (ja
JP2017506432A5 (enExample
Inventor
ジョージ ロペス オスバルド
ジョージ ロペス オスバルド
アルメリア ノクイル ジョナサン
アルメリア ノクイル ジョナサン
Original Assignee
日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/173,147 external-priority patent/US9184121B2/en
Application filed by 日本テキサス・インスツルメンツ合同会社, テキサス インスツルメンツ インコーポレイテッド, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ合同会社
Publication of JP2017506432A publication Critical patent/JP2017506432A/ja
Publication of JP2017506432A5 publication Critical patent/JP2017506432A5/ja
Application granted granted Critical
Publication of JP6509885B2 publication Critical patent/JP6509885B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/461—Leadframes specially adapted for cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/466—Tape carriers or flat leads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/652—Materials of strap connectors comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H10W72/651—Materials of strap connectors
    • H10W72/655—Materials of strap connectors of outermost layers of multilayered strap connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
JP2016550585A 2014-02-05 2015-02-05 半導体チップの端子を有するｄｃ−ｄｃコンバータ Active JP6509885B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/173,147 2014-02-05
US14/173,147 US9184121B2 (en) 2014-02-05 2014-02-05 Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US14/481,204 2014-09-09
US14/481,204 US9171828B2 (en) 2014-02-05 2014-09-09 DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
PCT/US2015/014655 WO2015120173A1 (en) 2014-02-05 2015-02-05 Dc-dc converter having terminals of semiconductor chips

Publications (3)

Publication Number Publication Date
JP2017506432A JP2017506432A (ja) 2017-03-02
JP2017506432A5 JP2017506432A5 (enExample) 2018-03-15
JP6509885B2 true JP6509885B2 (ja) 2019-05-08

Family

ID=53755485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016550585A Active JP6509885B2 (ja) 2014-02-05 2015-02-05 半導体チップの端子を有するｄｃ−ｄｃコンバータ

Country Status (5)

Country Link
US (4) US9171828B2 (enExample)
EP (1) EP3130009B1 (enExample)
JP (1) JP6509885B2 (enExample)
CN (2) CN105981170B (enExample)
WO (1) WO2015120173A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8426952B2 (en) * 2011-01-14 2013-04-23 International Rectifier Corporation Stacked half-bridge package with a common conductive leadframe
JP6265415B2 (ja) * 2014-01-24 2018-01-24 住友電工デバイス・イノベーション株式会社 増幅装置
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board
US20170018487A1 (en) * 2015-07-15 2017-01-19 Broadcom Corporation Thermal enhancement for quad flat no lead (qfn) packages
JP6011737B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 降圧チョッパ回路
JP6011736B1 (ja) * 2016-03-14 2016-10-19 富士電機株式会社 昇圧チョッパ回路
FR3073080B1 (fr) * 2017-10-26 2021-01-08 St Microelectronics Srl Circuit integre en boitier qfn
CN108345712B (zh) * 2018-01-10 2021-10-15 杭州士兰集成电路有限公司 计算半导体器件的频率与电流关系的方法和装置
US11476232B2 (en) 2019-03-25 2022-10-18 Analog Devices International Unlimited Company Three-dimensional packaging techniques for power FET density improvement
JP6709313B1 (ja) * 2019-05-31 2020-06-10 アオイ電子株式会社 半導体装置および半導体装置の製造方法
US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
US11742267B2 (en) * 2020-10-12 2023-08-29 Toyota Motor Engineering And Manufacturing North America, Inc. Power electronics assembly having flipped chip transistors
EP4057341A1 (en) * 2021-03-12 2022-09-14 Nexperia B.V. Packaged half-bridge circuit
DE102021133665A1 (de) 2021-12-17 2023-06-22 Infineon Technologies Ag Halbleitervorrichtung mit einem Premolded-Leadframe und einem Halbleiterpackage
US12261101B2 (en) * 2022-06-28 2025-03-25 Alpha And Omega Semiconductor International Lp Semiconductor package having wettable lead flanks and tie bars and method of making the same
IT202300006201A1 (it) * 2023-03-30 2024-09-30 St Microelectronics Int Nv Modulo di potenza multi-livello con effetti parassitici ridotti

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260996A (ja) * 1998-03-16 1999-09-24 Matsushita Electron Corp 光学半導体装置とその製造方法
JP2002252322A (ja) * 2001-02-21 2002-09-06 Sony Corp 電子部品実装基板及びその製造方法
US6946740B2 (en) * 2002-07-15 2005-09-20 International Rectifier Corporation High power MCM package
US7579697B2 (en) 2002-07-15 2009-08-25 International Rectifier Corporation Arrangement for high frequency application
CN101807533B (zh) * 2005-06-30 2016-03-09 费查尔德半导体有限公司 半导体管芯封装及其制作方法
US20090194857A1 (en) * 2008-02-01 2009-08-06 Yong Liu Thin Compact Semiconductor Die Packages Suitable for Smart-Power Modules, Methods of Making the Same, and Systems Using the Same
US7952204B2 (en) * 2008-04-14 2011-05-31 Fairchild Semiconductor Corporation Semiconductor die packages with multiple integrated substrates, systems using the same, and methods using the same
US8148815B2 (en) 2008-10-13 2012-04-03 Intersil Americas, Inc. Stacked field effect transistor configurations
EP2393113A4 (en) * 2009-01-28 2013-04-24 Hitachi Metals Ltd SEMICONDUCTOR COMPONENT AND POWER SUPPLY CIRCUIT FOR THIS
US8358014B2 (en) * 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
CN102169873B (zh) * 2010-02-25 2013-12-11 万国半导体有限公司 一种应用于功率切换器电路的半导体封装结构
US20110210708A1 (en) * 2010-03-01 2011-09-01 Texas Instruments Incorporated High Frequency Power Supply Module Having High Efficiency and High Current
US8513784B2 (en) * 2010-03-18 2013-08-20 Alpha & Omega Semiconductor Incorporated Multi-layer lead frame package and method of fabrication
JP5099243B2 (ja) * 2010-04-14 2012-12-19 株式会社デンソー 半導体モジュール
US20120200281A1 (en) * 2011-02-07 2012-08-09 Texas Instruments Incorporated Three-Dimensional Power Supply Module Having Reduced Switch Node Ringing
US20120228696A1 (en) 2011-03-07 2012-09-13 Texas Instruments Incorporated Stacked die power converter
US9165865B2 (en) 2011-04-07 2015-10-20 Texas Instruments Incorporated Ultra-thin power transistor and synchronous buck converter having customized footprint
US8299588B1 (en) * 2011-07-07 2012-10-30 Texas Instruments Incorporated Structure and method for uniform current distribution in power supply module
US8760872B2 (en) * 2011-09-28 2014-06-24 Texas Instruments Incorporated DC-DC converter vertically integrated with load inductor structured as heat sink
US9048338B2 (en) * 2011-11-04 2015-06-02 Infineon Technologies Ag Device including two power semiconductor chips and manufacturing thereof
CN103107171B (zh) * 2011-11-11 2015-03-18 万国半导体股份有限公司 一种倒装芯片的半导体器件
US8883567B2 (en) 2012-03-27 2014-11-11 Texas Instruments Incorporated Process of making a stacked semiconductor package having a clip
JP5924110B2 (ja) * 2012-05-11 2016-05-25 株式会社ソシオネクスト 半導体装置、半導体装置モジュールおよび半導体装置の製造方法
US20140063744A1 (en) * 2012-09-05 2014-03-06 Texas Instruments Incorporated Vertically Stacked Power FETS and Synchronous Buck Converter Having Low On-Resistance
US8976561B2 (en) * 2012-11-14 2015-03-10 Power Integrations, Inc. Switch mode power converters using magnetically coupled galvanically isolated lead frame communication
US9214415B2 (en) * 2013-04-11 2015-12-15 Texas Instruments Incorporated Integrating multi-output power converters having vertically stacked semiconductor chips
US9184121B2 (en) * 2014-02-05 2015-11-10 Texas Instruments Incorporated Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US9171828B2 (en) * 2014-02-05 2015-10-27 Texas Instruments Incorporated DC-DC converter having terminals of semiconductor chips directly attachable to circuit board

Also Published As

Publication number Publication date
WO2015120173A1 (en) 2015-08-13
US20170077017A1 (en) 2017-03-16
EP3130009A4 (en) 2018-03-28
JP2017506432A (ja) 2017-03-02
US9543240B2 (en) 2017-01-10
US20160218054A1 (en) 2016-07-28
EP3130009B1 (en) 2020-10-28
CN105981170A (zh) 2016-09-28
US20150318233A1 (en) 2015-11-05
CN105981170B (zh) 2019-12-10
US10930582B2 (en) 2021-02-23
CN110911377A (zh) 2020-03-24
EP3130009A1 (en) 2017-02-15
US9171828B2 (en) 2015-10-27
US20150221622A1 (en) 2015-08-06
US9305872B2 (en) 2016-04-05
CN110911377B (zh) 2022-07-22

Similar Documents

Publication Publication Date Title
JP6509885B2 (ja) 半導体チップの端子を有するｄｃ−ｄｃコンバータ
US9425132B2 (en) Stacked synchronous buck converter having chip embedded in outside recess of leadframe
JP6053752B2 (ja) カスタマイズされた占有面積を有する極薄パワートランジスタ及び同期バックコンバータ
CN101681897B (zh) 双侧冷却集成功率装置封装和模块及其制造方法
CN102983114B (zh) 具有超薄封装的高性能功率晶体管
CN115985868A (zh) 具有双侧冷却的功率模块封装
JP6534677B2 (ja) スタックされたチップ及びインターポーザを備えた部分的に薄化されたリードフレームを有するコンバータ
US20250357284A1 (en) Electronic devices and methods of manufacturing electronic devices
CN120221528A (zh) 具有部件承载中间结构和带有参考电势结构的附加载体的封装体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20160805

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190213

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190320

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190403

R150 Certificate of patent or registration of utility model

Ref document number: 6509885

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250