CN105925937A - 取向磁性薄膜的制备方法 - Google Patents
取向磁性薄膜的制备方法 Download PDFInfo
- Publication number
- CN105925937A CN105925937A CN201610469974.3A CN201610469974A CN105925937A CN 105925937 A CN105925937 A CN 105925937A CN 201610469974 A CN201610469974 A CN 201610469974A CN 105925937 A CN105925937 A CN 105925937A
- Authority
- CN
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- Prior art keywords
- film
- temperature
- magnetic field
- target
- substrate
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- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 30
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- 238000002050 diffraction method Methods 0.000 claims abstract description 12
- 230000001939 inductive effect Effects 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 53
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 239000010409 thin film Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 238000002474 experimental method Methods 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 238000010792 warming Methods 0.000 claims description 9
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 claims description 7
- 229910001172 neodymium magnet Inorganic materials 0.000 claims description 4
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 claims description 3
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910000828 alnico Inorganic materials 0.000 claims description 3
- 229910001337 iron nitride Inorganic materials 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910000727 Fe4N Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910000859 α-Fe Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017389 Fe3N Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- KJNGJIPPQOFCSK-UHFFFAOYSA-N [H][Sr][H] Chemical compound [H][Sr][H] KJNGJIPPQOFCSK-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- YYXHRUSBEPGBCD-UHFFFAOYSA-N azanylidyneiron Chemical compound [N].[Fe] YYXHRUSBEPGBCD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- PWBYYTXZCUZPRD-UHFFFAOYSA-N iron platinum Chemical compound [Fe][Pt][Pt] PWBYYTXZCUZPRD-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
- H01F41/205—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation by laser ablation, e.g. pulsed laser deposition [PLD]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610469974.3A CN105925937B (zh) | 2016-06-26 | 2016-06-26 | 取向磁性薄膜的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610469974.3A CN105925937B (zh) | 2016-06-26 | 2016-06-26 | 取向磁性薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105925937A true CN105925937A (zh) | 2016-09-07 |
CN105925937B CN105925937B (zh) | 2018-12-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610469974.3A Expired - Fee Related CN105925937B (zh) | 2016-06-26 | 2016-06-26 | 取向磁性薄膜的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105925937B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106431382A (zh) * | 2016-09-08 | 2017-02-22 | 苏州大学 | 制备具有室温宽频大磁电容效应的铁氧体外延薄膜的方法 |
CN109585120A (zh) * | 2018-11-08 | 2019-04-05 | 中国工程物理研究院电子工程研究所 | 基于磁印章转写技术的永磁体磁化方法 |
CN112680705A (zh) * | 2020-12-14 | 2021-04-20 | 天津大学 | 具有室温拓扑霍尔效应的外延Pt/γ′-Fe4N/MgO异质结构及制备方法 |
CN113106406A (zh) * | 2021-03-22 | 2021-07-13 | 华南理工大学 | 一种SmCo永磁薄膜的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101003890A (zh) * | 2006-01-20 | 2007-07-25 | 中国科学院物理研究所 | 一种具有可控磁场的脉冲激光沉积制膜系统 |
CN102877032A (zh) * | 2012-09-04 | 2013-01-16 | 中国科学院合肥物质科学研究院 | 强磁场下脉冲激光沉积薄膜制备系统 |
-
2016
- 2016-06-26 CN CN201610469974.3A patent/CN105925937B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101003890A (zh) * | 2006-01-20 | 2007-07-25 | 中国科学院物理研究所 | 一种具有可控磁场的脉冲激光沉积制膜系统 |
CN102877032A (zh) * | 2012-09-04 | 2013-01-16 | 中国科学院合肥物质科学研究院 | 强磁场下脉冲激光沉积薄膜制备系统 |
Non-Patent Citations (1)
Title |
---|
张磊: "脉冲激光沉积制备Fe-N薄膜", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106431382A (zh) * | 2016-09-08 | 2017-02-22 | 苏州大学 | 制备具有室温宽频大磁电容效应的铁氧体外延薄膜的方法 |
CN106431382B (zh) * | 2016-09-08 | 2020-05-01 | 苏州大学 | 制备具有室温宽频大磁电容效应的铁氧体外延薄膜的方法 |
CN109585120A (zh) * | 2018-11-08 | 2019-04-05 | 中国工程物理研究院电子工程研究所 | 基于磁印章转写技术的永磁体磁化方法 |
CN112680705A (zh) * | 2020-12-14 | 2021-04-20 | 天津大学 | 具有室温拓扑霍尔效应的外延Pt/γ′-Fe4N/MgO异质结构及制备方法 |
CN112680705B (zh) * | 2020-12-14 | 2022-08-05 | 天津大学 | 具有室温拓扑霍尔效应的外延Pt/γ′-Fe4N/MgO异质结构及制备方法 |
CN113106406A (zh) * | 2021-03-22 | 2021-07-13 | 华南理工大学 | 一种SmCo永磁薄膜的制备方法 |
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Publication number | Publication date |
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CN105925937B (zh) | 2018-12-04 |
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CB03 | Change of inventor or designer information |
Inventor after: Peng Xiaoling Inventor after: Wang Xinqing Inventor after: Ge Hongliang Inventor after: Zhang Ao Inventor after: Li Jing Inventor after: Yang Yanting Inventor after: Xu Jingcai Inventor after: Wang Panfeng Inventor after: Jin Dingfeng Inventor after: Jin Hongxiao Inventor after: Hong Bo Inventor before: Zhang Ao Inventor before: Wang Xinqing Inventor before: Ge Hongliang Inventor before: Peng Xiaoling Inventor before: Li Jing Inventor before: Yang Yanting Inventor before: Xu Jingcai Inventor before: Wang Panfeng Inventor before: Jin Dingfeng Inventor before: Jin Hongxiao Inventor before: Hong Bo |
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CB03 | Change of inventor or designer information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181023 Address after: 310018 No. 258, Xue Yuan Street, Xiasha Higher Education Park, Hangzhou, Zhejiang Applicant after: CHINA JILIANG UNIVERSITY Address before: 311112 East Zhejiang 15-1-101, Hangzhou, Yuhang Applicant before: Peng Xiaoling |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181204 Termination date: 20200626 |
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CF01 | Termination of patent right due to non-payment of annual fee |