CN105917255B - 制造反射镜元件的方法 - Google Patents
制造反射镜元件的方法 Download PDFInfo
- Publication number
- CN105917255B CN105917255B CN201580004334.9A CN201580004334A CN105917255B CN 105917255 B CN105917255 B CN 105917255B CN 201580004334 A CN201580004334 A CN 201580004334A CN 105917255 B CN105917255 B CN 105917255B
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- Prior art keywords
- mirror elements
- substrate
- layer
- mirror
- folded
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000012805 post-processing Methods 0.000 claims abstract description 23
- 238000005452 bending Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 29
- 230000008859 change Effects 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 210000001747 pupil Anatomy 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 4
- 230000005865 ionizing radiation Effects 0.000 claims description 4
- 238000001393 microlithography Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000002427 irreversible effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 92
- 238000000576 coating method Methods 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 17
- 238000002679 ablation Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- NFGXHKASABOEEW-UHFFFAOYSA-N 1-methylethyl 11-methoxy-3,7,11-trimethyl-2,4-dodecadienoate Chemical compound COC(C)(C)CCCC(C)CC=CC(C)=CC(=O)OC(C)C NFGXHKASABOEEW-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/09—Multifaceted or polygonal mirrors, e.g. polygonal scanning mirrors; Fresnel mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/10—Mirrors with curved faces
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/064—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements having a curved surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014201622.3A DE102014201622A1 (de) | 2014-01-30 | 2014-01-30 | Verfahren zum Herstellen eines Spiegelelements |
| DE102014201622.3 | 2014-01-30 | ||
| PCT/EP2015/051791 WO2015114043A1 (de) | 2014-01-30 | 2015-01-29 | Verfahren zum herstellen eines spiegelelements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105917255A CN105917255A (zh) | 2016-08-31 |
| CN105917255B true CN105917255B (zh) | 2019-10-25 |
Family
ID=52574101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580004334.9A Active CN105917255B (zh) | 2014-01-30 | 2015-01-29 | 制造反射镜元件的方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10423073B2 (enExample) |
| EP (1) | EP3100083B1 (enExample) |
| JP (1) | JP6550066B2 (enExample) |
| CN (1) | CN105917255B (enExample) |
| DE (1) | DE102014201622A1 (enExample) |
| WO (1) | WO2015114043A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102015225510A1 (de) * | 2015-12-16 | 2017-01-12 | Carl Zeiss Smt Gmbh | Spiegelelement, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage |
| FR3065536B1 (fr) * | 2017-04-20 | 2019-07-12 | Alpao | Miroir deformable a courbure variable et procede de fabrication d'un miroir associe |
| CN107143756B (zh) * | 2017-06-14 | 2020-05-08 | 上海安茗科技中心(有限合伙) | 灯具 |
| DE102019202222B4 (de) * | 2019-02-19 | 2023-08-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Ablenkspiegel aus Diamant sowie Verfahren zur Herstellung |
| EP3703114A1 (en) * | 2019-02-26 | 2020-09-02 | ASML Netherlands B.V. | Reflector manufacturing method and associated reflector |
| DE102023200603A1 (de) | 2023-01-26 | 2024-08-01 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen einer Spiegelanordnung, sowie Beschichtungsanlage |
| DE102023205340A1 (de) | 2023-06-07 | 2024-12-12 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines optischen Elements, sowie optisches Element und Beschichtungsanlage |
| DE102023206689A1 (de) | 2023-07-13 | 2025-01-16 | Carl Zeiss Smt Gmbh | Aktuierbare Spiegel-Baugruppe |
| DE102023210486A1 (de) * | 2023-10-24 | 2025-04-24 | Carl Zeiss Smt Gmbh | Optisches Element und EUV-Lithographiesystem |
| JP7519150B1 (ja) * | 2024-04-11 | 2024-07-19 | 合同会社北海道環境・エネルギー研究所 | 柱面体作製方法及びその作製方法を用いて作製された柱面体 |
| DE102024205025A1 (de) * | 2024-05-29 | 2025-12-04 | Carl Zeiss Smt Gmbh | Mikro-elektro-mechanisch bewegbares Element und System |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200641388A (en) * | 2005-02-28 | 2006-12-01 | Nikon Corp | Optical element and method for manufacturing optical element |
| DE102005044716A1 (de) * | 2005-09-19 | 2007-04-05 | Carl Zeiss Smt Ag | Aktives optisches Element |
| EP1775604A1 (en) * | 2005-10-11 | 2007-04-18 | Canon Kabushiki Kaisha | Multilayer mirror manufacturing method, optical system manufacturing method, exposure apparatus, and device manufacturing method |
| CN102565901A (zh) * | 2010-12-17 | 2012-07-11 | 北京兆阳光热技术有限公司 | 一种曲面反射镜及其制造方法 |
| CN102759765A (zh) * | 2011-04-28 | 2012-10-31 | 北京兆阳光热技术有限公司 | 一种曲面反射镜及其制造方法 |
| TW201331699A (zh) * | 2011-11-25 | 2013-08-01 | Asahi Glass Co Ltd | Ｅｕｖ微影術用反射型光罩基底及其製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS58217901A (ja) * | 1982-06-14 | 1983-12-19 | Nippon Kogaku Kk <Nikon> | 透過型光学部材 |
| JPH06186418A (ja) * | 1992-06-30 | 1994-07-08 | Victor Co Of Japan Ltd | ダイクロイックミラーの製造方法 |
| JPH09197124A (ja) * | 1996-01-23 | 1997-07-31 | Nippon Electric Glass Co Ltd | ダイクロイックミラー |
| US6011646A (en) * | 1998-02-20 | 2000-01-04 | The Regents Of The Unviersity Of California | Method to adjust multilayer film stress induced deformation of optics |
| US6110607A (en) * | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
| KR100647968B1 (ko) | 1999-07-22 | 2006-11-17 | 코닝 인코포레이티드 | 극 자외선 소프트 ｘ-선 투사 리소그라피 방법 및 마스크디바이스 |
| US6737201B2 (en) | 2000-11-22 | 2004-05-18 | Hoya Corporation | Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device |
| JP3939132B2 (ja) * | 2000-11-22 | 2007-07-04 | Ｈｏｙａ株式会社 | 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法 |
| JP4320970B2 (ja) * | 2001-04-11 | 2009-08-26 | 株式会社ニコン | 多層膜反射鏡の製造方法 |
| DE10314212B4 (de) | 2002-03-29 | 2010-06-02 | Hoya Corp. | Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske |
| US7056627B2 (en) | 2002-08-23 | 2006-06-06 | Hoya Corporation | Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask |
| US7314688B2 (en) * | 2002-09-11 | 2008-01-01 | Hoya Corporation | Method of producing a reflection mask blank, method of producing a reflection mask, and method of producing a semiconductor device |
| JP3806711B2 (ja) * | 2002-09-11 | 2006-08-09 | Ｈｏｙａ株式会社 | 反射型マスクブランク及び反射型マスクの製造方法、並びに半導体装置の製造方法 |
| US6778315B2 (en) | 2002-09-25 | 2004-08-17 | Rosemount Aerospace Inc. | Micro mirror structure with flat reflective coating |
| US20050026332A1 (en) * | 2003-07-29 | 2005-02-03 | Fratti Roger A. | Techniques for curvature control in power transistor devices |
| JP4717813B2 (ja) | 2003-09-12 | 2011-07-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光設備のための照明系 |
| US20080166534A1 (en) | 2005-02-28 | 2008-07-10 | Nikon Corporation | Optical Element and Method for Manufacturing Optical Element |
| EP1945829A1 (en) * | 2005-11-10 | 2008-07-23 | Asahi Glass Company, Limited | Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography |
| JP2008109060A (ja) * | 2005-11-10 | 2008-05-08 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクの多層反射膜を成膜する方法、ならびにｅｕｖリソグラフィ用反射型マスクブランクの製造方法 |
| JP2007193131A (ja) * | 2006-01-19 | 2007-08-02 | Seiko Epson Corp | 光学部品の製造方法 |
| JP2007329368A (ja) | 2006-06-09 | 2007-12-20 | Canon Inc | 多層膜ミラー、評価方法、露光装置及びデバイス製造方法 |
| JP2008101916A (ja) * | 2006-10-17 | 2008-05-01 | Canon Inc | 多層膜光学素子 |
| US20080153010A1 (en) * | 2006-11-09 | 2008-06-26 | Asahi Glass Company., Ltd. | Method for depositing reflective multilayer film of reflective mask blank for euv lithography and method for producing reflective mask blank for euv lithography |
| JP4269189B2 (ja) * | 2007-03-16 | 2009-05-27 | フジノン株式会社 | 光学素子、光学膜平面化方法及び光学素子の製造方法 |
| US8194322B2 (en) * | 2007-04-23 | 2012-06-05 | Nikon Corporation | Multilayer-film reflective mirror, exposure apparatus, device manufacturing method, and manufacturing method of multilayer-film reflective mirror |
| US20100246036A1 (en) * | 2007-07-27 | 2010-09-30 | Lagana Paolo | Preliminary Controlled Pre-Deformation Treatment for the Production of Mirrors |
| DE102008009600A1 (de) | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
| CN101946190B (zh) | 2008-02-15 | 2013-06-19 | 卡尔蔡司Smt有限责任公司 | 微光刻的投射曝光设备使用的分面镜 |
| DE102008042212A1 (de) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflektives optisches Element und Verfahren zu seiner Herstellung |
| JP5525550B2 (ja) * | 2009-03-06 | 2014-06-18 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ用の照明光学系及び光学系 |
| DE102009033511A1 (de) | 2009-07-15 | 2011-01-20 | Carl Zeiss Smt Ag | Mikrospiegelanordnung mit Anti-Reflexbeschichtung sowie Verfahren zu deren Herstellung |
| DE102011003357A1 (de) | 2011-01-31 | 2012-08-02 | Carl Zeiss Smt Gmbh | Spiegel für den EUV-Wellenlängenbereich, Herstellungsverfahren für einen solchen Spiegel, Projektionsobjektiv für die Mikrolithographie mit einem solchen Spiegel und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
| DE102011084117A1 (de) * | 2011-10-07 | 2013-04-11 | Carl Zeiss Smt Gmbh | Reflektives optisches Element für den EUV-Wellenlängenbereich, Verfahren zur Erzeugung und zur Korrektur eines solchen Elements, Projektionsobjektiv für die Mikrolithographie mit einem solchen Element und Projektionsbelichtungsanlage für die Mikrolithographie mit einem solchen Projektionsobjektiv |
-
2014
- 2014-01-30 DE DE102014201622.3A patent/DE102014201622A1/de not_active Ceased
-
2015
- 2015-01-29 WO PCT/EP2015/051791 patent/WO2015114043A1/de not_active Ceased
- 2015-01-29 CN CN201580004334.9A patent/CN105917255B/zh active Active
- 2015-01-29 EP EP15705920.5A patent/EP3100083B1/de active Active
- 2015-01-29 JP JP2016549378A patent/JP6550066B2/ja active Active
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2016
- 2016-08-01 US US15/225,328 patent/US10423073B2/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200641388A (en) * | 2005-02-28 | 2006-12-01 | Nikon Corp | Optical element and method for manufacturing optical element |
| DE102005044716A1 (de) * | 2005-09-19 | 2007-04-05 | Carl Zeiss Smt Ag | Aktives optisches Element |
| EP1775604A1 (en) * | 2005-10-11 | 2007-04-18 | Canon Kabushiki Kaisha | Multilayer mirror manufacturing method, optical system manufacturing method, exposure apparatus, and device manufacturing method |
| CN102565901A (zh) * | 2010-12-17 | 2012-07-11 | 北京兆阳光热技术有限公司 | 一种曲面反射镜及其制造方法 |
| CN102759765A (zh) * | 2011-04-28 | 2012-10-31 | 北京兆阳光热技术有限公司 | 一种曲面反射镜及其制造方法 |
| TW201331699A (zh) * | 2011-11-25 | 2013-08-01 | Asahi Glass Co Ltd | Ｅｕｖ微影術用反射型光罩基底及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105917255A (zh) | 2016-08-31 |
| DE102014201622A1 (de) | 2015-08-20 |
| EP3100083B1 (de) | 2019-08-14 |
| JP2017506363A (ja) | 2017-03-02 |
| US10423073B2 (en) | 2019-09-24 |
| JP6550066B2 (ja) | 2019-07-24 |
| EP3100083A1 (de) | 2016-12-07 |
| WO2015114043A1 (de) | 2015-08-06 |
| US20160342093A1 (en) | 2016-11-24 |
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