CN105895647B - 具有受光元件的光检测半导体装置 - Google Patents

具有受光元件的光检测半导体装置 Download PDF

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CN105895647B
CN105895647B CN201610085689.1A CN201610085689A CN105895647B CN 105895647 B CN105895647 B CN 105895647B CN 201610085689 A CN201610085689 A CN 201610085689A CN 105895647 B CN105895647 B CN 105895647B
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小山威
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Abstract

为了提供减少余像的具有受光元件的光检测半导体装置，以受光元件端部到载流子取出用电极为止的距离成为相等的方式，将利用PN结的光电二极管以圆形配置，能进行从全方位的同样的载流子的取出。

Description

具有受光元件的光检测半导体装置
技术领域
本发明涉及具有受光元件的光检测半导体装置。
背景技术
CMOS图像传感器一般作为受光元件，由受光元件以一维或者二维排列的受光部像素阵列构成。像素由PN结的光电二极管型光检测器构成，入射光被吸收到半导体衬底内部，产生的载流子在该光电二极管的耗尽层部复合，能够作为电压或电流而得到输出。
因使用CMOS图像传感器的设备的高速化要求，CMOS图像传感器的读出时间变短，因此存在蓄积在该光电二极管内的载流子无法达到成为载流子取出口的电极，在下一个读出时成为余像显现的情况。另外，若为了将CMOS图像传感器设为高灵敏度而增大受光元件面积，则受光元件端部到载流子取出用电极为止的距离变长，会比载流子扩散而迁移的距离还大，产生余像。
作为不致产生余像的改善方案，提出了使受光元件内带电位梯度，利用漂移增加载流子的迁移速度从而减少余像的方法（例如，参照专利文献1）。
现有技术文献
专利文献
专利文献1：日本特开2002－237614号公报。
发明内容
发明要解决的课题
然而在受光元件内设置电位梯度的情况下，需要用于消除电位差的期间，无法满足高速化的要求。因此，本发明的课题是提供能进行从全方位的同样的载流子的取出，能对应高速化的要求的具有受光元件的光检测半导体装置。
用于解决课题的方案
为了解决上述课题，如下地构成光检测半导体装置。具有受光元件的光检测半导体装置，其特征在于，受光元件具备：第一导电型半导体衬底；通过与所述半导体衬底的接合而构成光电二极管的圆形的第二导电型半导体区域；以及设在所述第二半导体区域内的圆形的第三导电型高浓度区域，多个所述光电二极管以阵列状配置。
发明效果
依据本发明，能提供受光元件端部到载流子取出用电极为止的距离成为相等，能从全方位进行载流子的同样的取出，减少余像的具有受光元件的光检测半导体装置。
附图说明
【图1】是本发明的第1实施例即光检测半导体装置的受光元件的平面图。
【图2】是沿着图1所示的光检测半导体装置的切断线A－A的截面图。
【图3】是本发明的第2实施例即光检测半导体装置的受光元件的平面图。
【图4】是沿着图3所示的光检测半导体装置的切断线B－B的截面图。
具体实施方式
以下利用附图，通过实施例来说明用于实施发明的形态。
【实施例1】
图1是示出利用本发明的光检测半导体装置的第1实施例的平面图，示出形成有受光元件即光电二极管的受光部。图2是沿着图1所示的光检测半导体装置的切断线A－A的截面图。
受光部1具备：P型的半导体衬底2；N型阱区域3；P型半导体区域4；N型半导体区域5；阴极电极6；元件分离区域7；以及绝缘层8。
半导体衬底2例如以硅为材料形成为单晶。绝缘膜8例如由硅的氧化物或氮化硅膜构成，作为半导体表面的保护膜而发挥功能。N型阱区域3是从半导体衬底2的表面到内部扩散有N型的杂质的阱区域，具有圆柱形状。从半导体衬底的上部观看的俯视图中呈现圆形。通过与半导体衬底2的PN结，形成光电二极管9。
N型半导体区域5是N型的杂质以高浓度扩散的区域，在N型阱区域3的内部以同心圆状设置。阴极电极6由设在N型半导体区域5的中心的金属材料构成，例如通过溅射法等以圆形或者矩形状形成，经由N型半导体区域5与N型阱区域3电连接。
在光电二极管9中，以阴极电极6的电位比构成阳极的P型的半导体衬底2的电位高的方式施加偏置，从而耗尽层在半导体衬底2与N型阱区域3之间扩展，作为用于取入入射的光产生的载流子的光感测区域发挥功能。由于耗尽层沿着PN结扩展，所以在本实施例中耗尽层呈现由圆柱的侧面及底部构成的形状。是象茶筒或者杯子那样的形状。
P型半导体区域4以包围N型阱区域3的方式沿着半导体衬底2的表面形成。目的在于防止半导体衬底2的表面的反转。
在N型阱区域3的表面配置有由厚的氧化膜构成的元件分离区域7。元件分离区域7配置到N型半导体区域5的周围，规定N型半导体区域5的形状。由于在N型半导体区域5的表面并未配置，所以元件分离区域7呈现内侧有圆形的孔的形状。由于元件分离区域7的成为N型阱区域3的外侧的区域的形状既可为矩形也可为圆形，所以元件分离区域7成为外形为矩形或者圆形的环形形状。可以与形成在邻接的光电二极管的周围的元件分离区域连续形成，也可以分离形成。在连续的情况下，环形形状是连续的环形形状而不会成为分离的环形形状这一点不必赘述。
若光L1入射到受光部1，则光L1透射绝缘膜8及元件分离区域7，入射光L1的各波长分量按照光能，到达半导体衬底2的内部，产生载流子。若载流子扩散，到达PN结的耗尽层区域，则作为电压或电流而得到输出。在本实施例中，将N型半导体区域5配置在N型阱区域3的中央，使N型半导体区域5及N型阱区域3为圆形，从而使N型半导体区域5与N型阱区域3的端部的距离相等，促进从全方位的同样的载流子扩散，能抑制余像。
此外，在图1及图2中示出光电二极管以一维排列的受光部。将本发明适用于光电二极管以二维排列的受光部，也完全同样是可能的这一点不必赘述。
【实施例2】
图3是示出利用本发明的光检测半导体装置的第2实施例的平面图，示出形成有受光元件即光电二极管的受光部。图4是沿着图3所示的光检测半导体装置的切断线B－B的截面图。对于与图1对应的部分标注相同的标号。与图1所示的第1实施例不同之处在于为防止串扰配置利用布线层10的遮光部这一点。布线层10以圆形开口，从上方覆盖N型阱区域3以外的受光部整个面。布线层10的开口宽度L对应期望的余像特性而可变。
另外，布线层10也可以为多层。
另外，在布线层10以圆形开口的情况下，因具有圆形的开口部的布线层10而入射光L1以圆形入射到N型阱区域，所以，如果在圆形的开口部的中心的下方以同心圆状配置N型半导体区域5及阴极电极6，则载流子在全方位迁移的最大距离成为相等。在该情况下，无需使N型阱区域为圆形，也能为矩形。
标号说明
1　受光部；2　P型半导体衬底；3　N型阱区域；4　P型半导体区域；5　N型半导体区域；6　阴极电极；7　元件分离区域；8　绝缘层；9　光电二极管；10　布线层；L　布线层开口宽度；L1　入射光。

Claims (4)

1.一种具有受光元件的光检测半导体装置，其中所述受光元件具有：
第1导电型的半导体衬底；
在从所述半导体衬底的表面到内部设置的、在侧面及底部与所述半导体衬底之间形成光电二极管的圆筒形的第2导电型的阱区域；
在所述阱区域的内部以同心圆状设置的第2导电型的半导体区域；以及
从所述阱区域的周围覆盖到所述半导体区域的周围的元件分离区域。
2.如权利要求1所述的具有受光元件的光检测半导体装置，其特征在于，在所述光电二极管上的包括所述阱区域的区域配置有以圆形开口且覆盖所述阱区域以外的区域的遮光用布线层。
3.如权利要求2所述的具有受光元件的光检测半导体装置，其特征在于，层叠有多个所述遮光用布线层。
4.一种具有受光元件的光检测半导体装置，其中所述受光元件具有：
第1导电型的半导体衬底；
在从所述半导体衬底的表面到内部设置的、在侧面及底部与所述半导体衬底之间形成光电二极管的矩形的第2导电型的半导体区域；
配置在所述光电二极管的所述半导体区域上的圆形开口的遮光用布线层；以及
在所述圆形开口的遮光用布线层的中心的下方以同心圆状配置的N型半导体区域及阴极电极。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226777A (ja) * 1989-02-28 1990-09-10 Toshiba Corp 半導体受光素子及びその製造方法
CN100466270C (zh) * 2003-06-30 2009-03-04 罗姆股份有限公司 图像传感器及光电二极管的分离结构的形成方法
CN102473714A (zh) * 2009-07-10 2012-05-23 株式会社岛津制作所 固体摄像元件
WO2014097528A1 (ja) * 2012-12-17 2014-06-26 株式会社デンソー 光センサ

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04111479A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
JPH0537002A (ja) * 1991-07-30 1993-02-12 Nikko Kyodo Co Ltd 受光素子
JPH06112516A (ja) * 1992-09-25 1994-04-22 Toshiba Corp 半導体受光素子
JP3674255B2 (ja) * 1997-08-26 2005-07-20 松下電器産業株式会社 受光素子の製造方法
JP3221402B2 (ja) * 1998-06-22 2001-10-22 住友電気工業株式会社 受光素子と受光装置
JP3554244B2 (ja) * 1999-02-25 2004-08-18 キヤノン株式会社 光電変換装置及びそれを用いたイメージセンサ並びに画像入力システム
JP2000252507A (ja) * 1999-02-26 2000-09-14 Hamamatsu Photonics Kk 光ピックアップ用半導体受光素子
JP2002237614A (ja) 2000-11-28 2002-08-23 Canon Inc 光電変換装置及びその駆動方法並びに情報処理装置
JP2004241402A (ja) * 2003-02-03 2004-08-26 Nippon Sheet Glass Co Ltd 半導体受光素子
JP2006041189A (ja) * 2004-07-27 2006-02-09 Hamamatsu Photonics Kk 固体撮像素子
KR100638260B1 (ko) * 2005-06-24 2006-10-25 한국과학기술원 씨모스 이미지 센서
JP2007073864A (ja) * 2005-09-09 2007-03-22 Seiko Epson Corp ラインセンサ及び画像情報読取装置
JP2007201432A (ja) * 2005-12-28 2007-08-09 Sumitomo Electric Ind Ltd 撮像装置、視界支援装置、暗視装置、航海支援装置および監視装置
JP2008060161A (ja) * 2006-08-29 2008-03-13 Hamamatsu Photonics Kk 光検出器及び光検出器の製造方法
WO2010073768A1 (ja) * 2008-12-26 2010-07-01 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP2011253987A (ja) * 2010-06-03 2011-12-15 Mitsubishi Electric Corp 半導体受光素子及び光モジュール
US20120104464A1 (en) * 2010-10-29 2012-05-03 James Robert Janesick P-pixel cmos imagers using ultra-thin silicon on insulator substrates (utsoi)
JP5644433B2 (ja) * 2010-12-02 2014-12-24 ソニー株式会社 固体撮像素子、および、固体撮像素子の製造方法
JP5418527B2 (ja) * 2011-03-22 2014-02-19 ソニー株式会社 固体撮像装置及び電子機器
JP2013021014A (ja) * 2011-07-07 2013-01-31 Canon Inc エネルギー線検出装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02226777A (ja) * 1989-02-28 1990-09-10 Toshiba Corp 半導体受光素子及びその製造方法
CN100466270C (zh) * 2003-06-30 2009-03-04 罗姆股份有限公司 图像传感器及光电二极管的分离结构的形成方法
CN102473714A (zh) * 2009-07-10 2012-05-23 株式会社岛津制作所 固体摄像元件
WO2014097528A1 (ja) * 2012-12-17 2014-06-26 株式会社デンソー 光センサ

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