CN104952893B - 图像传感器 - Google Patents
图像传感器 Download PDFInfo
- Publication number
- CN104952893B CN104952893B CN201510129359.3A CN201510129359A CN104952893B CN 104952893 B CN104952893 B CN 104952893B CN 201510129359 A CN201510129359 A CN 201510129359A CN 104952893 B CN104952893 B CN 104952893B
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- layer
- semiconductor substrate
- image sensor
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000969 carrier Substances 0.000 claims abstract description 16
- 230000004048 modification Effects 0.000 claims abstract description 5
- 238000012986 modification Methods 0.000 claims abstract description 5
- 238000002407 reforming Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 239000002131 composite material Substances 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-061696 | 2014-03-25 | ||
JP2014061696A JP6294721B2 (ja) | 2014-03-25 | 2014-03-25 | イメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104952893A CN104952893A (zh) | 2015-09-30 |
CN104952893B true CN104952893B (zh) | 2020-07-07 |
Family
ID=54167434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510129359.3A Expired - Fee Related CN104952893B (zh) | 2014-03-25 | 2015-03-24 | 图像传感器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9412780B2 (zh) |
JP (1) | JP6294721B2 (zh) |
KR (1) | KR20150111299A (zh) |
CN (1) | CN104952893B (zh) |
TW (1) | TWI660491B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210242027A1 (en) * | 2018-06-12 | 2021-08-05 | Tokyo Electron Limited | Substrate processing method, modification device and substrate processing system |
CN114242826B (zh) * | 2021-12-02 | 2023-12-22 | 武汉新芯集成电路制造有限公司 | 单光子雪崩二极管及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1465105A (zh) * | 2001-05-22 | 2003-12-31 | 索尼公司 | 固体成像器件的制造方法 |
JP2009206173A (ja) * | 2008-02-26 | 2009-09-10 | Hamamatsu Photonics Kk | 半導体光検出装置 |
CN102208427A (zh) * | 2010-03-31 | 2011-10-05 | 索尼公司 | 固体摄像器件、用于制造固体摄像器件的方法和电子设备 |
CN103066085A (zh) * | 2012-12-17 | 2013-04-24 | 上海集成电路研发中心有限公司 | 像素单元、像素阵列、图像传感器以及电子产品 |
JP5247483B2 (ja) * | 2009-01-16 | 2013-07-24 | 浜松ホトニクス株式会社 | フォトダイオードアレイ及び放射線検出器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4394904B2 (ja) * | 2003-06-23 | 2010-01-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイの製造方法 |
US7960202B2 (en) * | 2006-01-18 | 2011-06-14 | Hamamatsu Photonics K.K. | Photodiode array having semiconductor substrate and crystal fused regions and method for making thereof |
US7875918B2 (en) * | 2009-04-24 | 2011-01-25 | Omnivision Technologies, Inc. | Multilayer image sensor pixel structure for reducing crosstalk |
JP2013172014A (ja) * | 2012-02-21 | 2013-09-02 | Sony Corp | 固体撮像装置およびその製造方法、並びにカメラシステム |
-
2014
- 2014-03-25 JP JP2014061696A patent/JP6294721B2/ja not_active Expired - Fee Related
-
2015
- 2015-03-11 TW TW104107736A patent/TWI660491B/zh not_active IP Right Cessation
- 2015-03-23 KR KR1020150039935A patent/KR20150111299A/ko not_active Application Discontinuation
- 2015-03-24 US US14/666,497 patent/US9412780B2/en not_active Expired - Fee Related
- 2015-03-24 CN CN201510129359.3A patent/CN104952893B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1465105A (zh) * | 2001-05-22 | 2003-12-31 | 索尼公司 | 固体成像器件的制造方法 |
JP2009206173A (ja) * | 2008-02-26 | 2009-09-10 | Hamamatsu Photonics Kk | 半導体光検出装置 |
JP5247483B2 (ja) * | 2009-01-16 | 2013-07-24 | 浜松ホトニクス株式会社 | フォトダイオードアレイ及び放射線検出器 |
CN102208427A (zh) * | 2010-03-31 | 2011-10-05 | 索尼公司 | 固体摄像器件、用于制造固体摄像器件的方法和电子设备 |
CN103066085A (zh) * | 2012-12-17 | 2013-04-24 | 上海集成电路研发中心有限公司 | 像素单元、像素阵列、图像传感器以及电子产品 |
Also Published As
Publication number | Publication date |
---|---|
KR20150111299A (ko) | 2015-10-05 |
US20150279895A1 (en) | 2015-10-01 |
JP2015185730A (ja) | 2015-10-22 |
JP6294721B2 (ja) | 2018-03-14 |
TW201607010A (zh) | 2016-02-16 |
CN104952893A (zh) | 2015-09-30 |
US9412780B2 (en) | 2016-08-09 |
TWI660491B (zh) | 2019-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160321 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Chiba County, Japan Applicant after: ABLIC Inc. Address before: Chiba County, Japan Applicant before: DynaFine Semiconductor Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200707 |