TWI660491B - 影像感測器 - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000969 carrier Substances 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 238000002407 reforming Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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Abstract
提供具有抑制發生於Si基板的深處位置之載子的橫擴散所致之鄰接之光二極體的作用(像素間串擾)之半導體受光元件的影像感測器。
於鄰接之光二極體間利用雷射作出改質層,產生再結合位準,抑制像素間串擾。
Description
本發明係關於具有半導體受光元件的影像感測器。
影像感測器係一般由具有半導體受光元件的受光部像素陣列所構成。於構成受光部像素陣列之各像素的半導體受光元件,廣泛使用具有PN接合之光二極體型的光檢測器。各像素的入射光被半導體基板內部吸收,發生的載子係在該光二極體的空乏層再結合,作為電壓或電流而可獲得半導體受光元件的輸出。
因為取得之畫像資料的高解析度的要求,進而增進像素尺寸的縮小,難以獲得所希望之特性。尤其,像素間的串擾所致之特性劣化更為顯著。在某像素的正下方發生的載子往橫方向擴散,在鄰接之像素的空乏層部中被收集且再結合而成為多餘的訊號,因此,輸出訊號會成為不穩定。在通常的像素中來自鄰接區域的串擾成分會相互抵消,所以,難以發生輸出訊號的降低,但是,尤其於配置在最外側的像素中,因為沒有來自鄰接區域的串擾成分,
輸出訊號會降低。
作為該改善對策,有增加光檢測器的空乏層深度,提升載子的收集效率的方法。又,也提案有在空乏層下構成反射絕緣膜,提高空乏層的載子收集效率,來抑制串擾的方法(例如,參照專利文獻1)。
[專利文獻1]日本特開平5-206495號公報
然而,空乏層深度的增加有限度(約1.2μm),波長較長的光線(紅~紅外光)會到達Si基板深處,無法抑制往鄰接像素的橫方向擴散所致之像素間串擾。又,在空乏層下形成反射絕緣膜的像素構造中,無法完全使入射光絕緣,因透射光所產生之載子所致之串擾會成為問題。因此,關於本案發明的課題係提供可抑制串擾的影像感測器。
為了解決前述課題,在本發明中,如以下所述構成影像感測器。影像感測器的特徵,係由具備第一導電型半導體基板與藉由和前述半導體基板的接合而構成光二極體之第二導電型半導體區域的半導體受光元件所成,複數光二極體被配置成陣列狀,於鄰接之前述光二極體之間,具有
雷射光照射所致之改質層,改質層的配置深度根據入射光的波長而任意設定。
依據本發明,半導體基板的深處位置所發生的載子,係被改質層捕捉,再結合後消滅,因此,可抑制橫方向擴散所致之受光部像素間的串擾。
1‧‧‧影像感測器
2‧‧‧半導體基板
3‧‧‧N型層區域
4‧‧‧P型半導體區域
5‧‧‧N型半導體區域
6‧‧‧陰極電極
7‧‧‧陽極電極
8‧‧‧元件分離區域
9‧‧‧絕緣膜
10‧‧‧改質層
11‧‧‧光二極體
L1‧‧‧入射光
[圖1]本發明所之半導體受光元件的俯視圖。
[圖2]圖1所示之半導體受光元件的第1實施例之A-A線剖面圖。
[圖3]表示對於各波長之Si的光線吸收的圖。
[圖4]圖1所示之半導體受光元件的第2實施例之A-A線剖面圖。
[圖5]圖1所示之半導體受光元件的第3實施例之A-A線剖面圖。
以下,對於複數實施例,使用圖面來說明用以實施發明的形態。
圖1係本發明第1實施例之影像感測器的半導體受光
元件的俯視圖,圖2係第1實施例之影像感測器的半導體受光元件的剖面圖。
影像感測器1係具備P型的半導體基板2、N型層區域3、P型半導體區域4、N型半導體區域5、陰極電極6、陽極電極7、元件分離區域8、絕緣膜9,在本實施例中由二極體所成。
半導體基板2係例如將矽的單晶形成於材料者,於內部所定位置具有改質層10。絕緣膜9係例如由氧化矽膜或氮化矽膜所成,具有作為半導體表面之保護膜的功能。N型層區域3係藉由與半導體基板2的PN接合,形成光二極體11。光二極體11係利用對陰極電極6施加偏壓,空乏層擴散於半導體基板2,具有作為用以擷取電荷之光感知區域的功能。P型半導體區域4係以包圍N型半導體區域3之方式形成。陰極電極6及陽極電極7係由金屬材料所成,例如藉由濺鍍法等而形成為矩形狀,分別與N型層區域3、P型半導體區域4電性連接。
光線L1射入至影像感測器1時,光線L1係透射絕緣膜9及元件分離區域8,照射光L1的各波長成分係依照波長,到達半導體基板2的內部,發生載子。載子擴散而到達PN接合的空乏層區域為止時,作為電壓或電流而獲得輸出。
照射光L1的Si之光吸收係遵從朗伯-比爾定律(Lambert-Beer law)log10(I1/I0)=-α L(I0:射入至媒質前之光線的強度,I1:移動於媒質時之光線的強度,α:吸
收係數),波長較長的光線會到達半導體基板2的深處為止。圖3係表示對於各波長之光線的吸收的圖。例如,波長1000nm的紅外光係於半導體基板2的深度70μm中大約一半被吸收。
發生於半導體基板2的深處位置的載子雖然會擴散而到達PN接合的空乏層區域為止,但是,此時,於本實施例中,為了藉由橫方向擴散控制載子到達鄰接之光二極體,於與鄰接之光二極體之間形成雷射照射所致之改質層10。改質層10係藉由聚光透鏡以聚光點形成於晶圓之內部的所定深度之方式調整透射半導體基板之波長的雷射光,並利用其雷射光沿著晶圓的表面進行掃描,藉此,於晶圓之內部的一定深度的區域,形成作為捕捉載子之面狀的改質層。該配置的深度係比光二極體11還深為佳。
發生於半導體基板2的深處位置的載子,係被最接近的改質層10捕捉,再結合後消滅。改質層配置的深度係根據入射光L1的波長而任意設定。例如,對於波長1000nm的紅外光,以圖3為參考,改質層的深度係形成於吸收效率較高的10~100μm。
在半導體受光元件被1維配置的影像感測器中,與鄰接之光二極體之間也可1維地配置。在半導體受光元件被2維配置的影像感測器中,以包圍各光二極體之方式,在與鄰接之光二極體之間配置改質層,所以,改質層被配置成格子狀。如此一來,可抑制往鄰接像素的橫方向擴散所致之像素間串擾。
圖4係揭示本發明之影像感測器的半導體受光元件之第2實施例的剖面圖。與圖2對應的部分附加相同號碼。與圖2所示之第1實施例不同之處,係將改質層10於深度方向多層化之處。為了防止發生於因應射入之不同波長的深度之載子的橫擴散,而使改質層10多層化。
圖5係揭示本發明之影像感測器的半導體受光元件之第3實施例的剖面圖。與圖2對應的部分附加相同號碼。與圖2所示之第1實施例不同之處,係將改質層10於深度方向增厚之處。為了防止發生於因應射入之不同波長的深度之載子的橫擴散,可利用增大對雷射光進行聚光的物透鏡的開口數NA,來增厚改質層10。
Claims (7)
- 一種影像感測器,係具有設置於半導體基板之複數半導體受光元件的影像感測器,其特徵為:於前述複數半導體受光元件中鄰接之半導體受光元件之間的前述半導體基板之內部的區域,捕捉載子的改質層一維地設置在前述鄰接之半導體受光元件之間,而設置前述改質層的深度,係比設置前述半導體受光元件的深度還深,並且因應因光線的射入而發生於前述半導體基板之載子的深度來設定。
- 如申請專利範圍第1項所記載之影像感測器,其中,前述改質層,係以於深度方向,作為複數層之方式設置。
- 如申請專利範圍第1項所記載之影像感測器,其中,前述半導體受光元件是光二極體。
- 如申請專利範圍第3項所記載之影像感測器,其中,前述改質層,係於深度方向多層化。
- 如申請專利範圍第3項所記載之影像感測器,其中,前述改質層,係被厚膜化。
- 一種影像感測器,係具有設置於半導體基板之複數半導體受光元件的影像感測器,其特徵為:於前述複數半導體受光元件中鄰接之半導體受光元件之間的前述半導體基板之內部的區域,具備具有因應因光線的射入而發生於前述半導體基板之載子的深度所設定之深度,且捕捉載子的改質層;前述改質層,係藉由聚光透鏡以聚光點形成於前述半導體基板之內部的所定深度之方式調整透射前述半導體基板之波長的雷射光,並利用其雷射光沿著前述半導體基板的表面進行掃描,藉此,於前述半導體基板之內部的一定深度的區域,作為捕捉載子之面狀的層而形成。
- 如申請專利範圍第6項所記載之影像感測器,其中,前述改質層,係以於深度方向,作為複數層之方式設置。
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US20030170928A1 (en) * | 2001-05-22 | 2003-09-11 | Takayuki Shimozono | Production method for solid imaging device |
TWI416717B (zh) * | 2009-04-24 | 2013-11-21 | Omnivision Tech Inc | 用於減少串擾之多層影像感測器像素結構 |
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JP4394904B2 (ja) * | 2003-06-23 | 2010-01-06 | 浜松ホトニクス株式会社 | フォトダイオードアレイの製造方法 |
US7960202B2 (en) * | 2006-01-18 | 2011-06-14 | Hamamatsu Photonics K.K. | Photodiode array having semiconductor substrate and crystal fused regions and method for making thereof |
JP4951551B2 (ja) * | 2008-02-26 | 2012-06-13 | 浜松ホトニクス株式会社 | 半導体光検出装置 |
JP5247483B2 (ja) * | 2009-01-16 | 2013-07-24 | 浜松ホトニクス株式会社 | フォトダイオードアレイ及び放射線検出器 |
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- 2015-03-11 TW TW104107736A patent/TWI660491B/zh not_active IP Right Cessation
- 2015-03-23 KR KR1020150039935A patent/KR20150111299A/ko not_active Application Discontinuation
- 2015-03-24 CN CN201510129359.3A patent/CN104952893B/zh not_active Expired - Fee Related
- 2015-03-24 US US14/666,497 patent/US9412780B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030170928A1 (en) * | 2001-05-22 | 2003-09-11 | Takayuki Shimozono | Production method for solid imaging device |
TWI416717B (zh) * | 2009-04-24 | 2013-11-21 | Omnivision Tech Inc | 用於減少串擾之多層影像感測器像素結構 |
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JP2015185730A (ja) | 2015-10-22 |
US9412780B2 (en) | 2016-08-09 |
US20150279895A1 (en) | 2015-10-01 |
CN104952893A (zh) | 2015-09-30 |
TW201607010A (zh) | 2016-02-16 |
CN104952893B (zh) | 2020-07-07 |
JP6294721B2 (ja) | 2018-03-14 |
KR20150111299A (ko) | 2015-10-05 |
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