CN105814688B - 在嵌入式外延刻面上形成硅化物和接触 - Google Patents

在嵌入式外延刻面上形成硅化物和接触 Download PDF

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Publication number
CN105814688B
CN105814688B CN201480067520.2A CN201480067520A CN105814688B CN 105814688 B CN105814688 B CN 105814688B CN 201480067520 A CN201480067520 A CN 201480067520A CN 105814688 B CN105814688 B CN 105814688B
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drain
gate
mos transistor
source
epitaxial source
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Chinese (zh)
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CN105814688A (zh
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K-Y·利姆
J·W·布拉奇福德
S·S·艾博特
Y·崔
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201480067520.2A 2013-12-12 2014-12-12 在嵌入式外延刻面上形成硅化物和接触 Active CN105814688B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361914995P 2013-12-12 2013-12-12
US61/914,995 2013-12-12
US14/563,062 2014-12-08
US14/563,062 US9508601B2 (en) 2013-12-12 2014-12-08 Method to form silicide and contact at embedded epitaxial facet
PCT/US2014/070111 WO2015089450A1 (en) 2013-12-12 2014-12-12 Forming silicide and contact at embedded epitaxial facet

Publications (2)

Publication Number Publication Date
CN105814688A CN105814688A (zh) 2016-07-27
CN105814688B true CN105814688B (zh) 2019-05-17

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US (3) US9508601B2 (enExample)
EP (1) EP3080844B1 (enExample)
JP (2) JP6503359B2 (enExample)
CN (1) CN105814688B (enExample)
WO (1) WO2015089450A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9508601B2 (en) * 2013-12-12 2016-11-29 Texas Instruments Incorporated Method to form silicide and contact at embedded epitaxial facet
US20160064286A1 (en) * 2014-09-03 2016-03-03 GlobalFoundries, Inc. Integrated circuits and methods for fabricating integrated circuits
US9947753B2 (en) 2015-05-15 2018-04-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method thereof
US10297602B2 (en) 2017-05-18 2019-05-21 Taiwan Semiconductor Manufacturing Company, Ltd. Implantations for forming source/drain regions of different transistors
US20210408275A1 (en) * 2020-06-26 2021-12-30 Intel Corporation Source or drain structures with high surface germanium concentration
US12218214B2 (en) * 2021-04-15 2025-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain silicide for multigate device performance and method of fabricating thereof

Citations (4)

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US4998150A (en) * 1988-12-22 1991-03-05 Texas Instruments Incorporated Raised source/drain transistor
CN1606150A (zh) * 2003-10-08 2005-04-13 台湾积体电路制造股份有限公司 单一晶体管型随机存取存储器的制造方法及其电容器结构
US20090166755A1 (en) * 2007-12-27 2009-07-02 Texas Instruments Incorporated Growth of unfaceted sige along a semiconductor device width
US20120091539A1 (en) * 2010-10-15 2012-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Facet-free semiconductor device

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US5571733A (en) * 1995-05-12 1996-11-05 Micron Technology, Inc. Method of forming CMOS integrated circuitry
KR100233832B1 (ko) * 1996-12-14 1999-12-01 정선종 반도체 소자의 트랜지스터 및 그 제조방법
US5960291A (en) * 1997-08-08 1999-09-28 Advanced Micro Devices, Inc. Asymmetric channel transistor and method for making same
US6107157A (en) * 1998-02-27 2000-08-22 Micron Technology, Inc. Method and apparatus for trench isolation process with pad gate and trench edge spacer elimination
US6169011B1 (en) * 1998-03-24 2001-01-02 Sharp Laboratories Of America, Inc. Trench isolation structure and method for same
US6150212A (en) * 1999-07-22 2000-11-21 International Business Machines Corporation Shallow trench isolation method utilizing combination of spacer and fill
US6140232A (en) * 1999-08-31 2000-10-31 United Microelectronics Corp. Method for reducing silicide resistance
US6268255B1 (en) * 2000-01-06 2001-07-31 Advanced Micro Devices, Inc. Method of forming a semiconductor device with metal silicide regions
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US6376885B1 (en) * 2000-09-25 2002-04-23 Vanguard International Semiconductor Corp. Semiconductor structure with metal silicide and method for fabricated the structure
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US9508601B2 (en) * 2013-12-12 2016-11-29 Texas Instruments Incorporated Method to form silicide and contact at embedded epitaxial facet

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998150A (en) * 1988-12-22 1991-03-05 Texas Instruments Incorporated Raised source/drain transistor
CN1606150A (zh) * 2003-10-08 2005-04-13 台湾积体电路制造股份有限公司 单一晶体管型随机存取存储器的制造方法及其电容器结构
US20090166755A1 (en) * 2007-12-27 2009-07-02 Texas Instruments Incorporated Growth of unfaceted sige along a semiconductor device width
US20120091539A1 (en) * 2010-10-15 2012-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Facet-free semiconductor device

Also Published As

Publication number Publication date
JP2017504192A (ja) 2017-02-02
EP3080844B1 (en) 2022-08-03
WO2015089450A1 (en) 2015-06-18
US20170047329A1 (en) 2017-02-16
US10008499B2 (en) 2018-06-26
JP6503359B2 (ja) 2019-04-17
US20180047728A1 (en) 2018-02-15
US9508601B2 (en) 2016-11-29
US9812452B2 (en) 2017-11-07
CN105814688A (zh) 2016-07-27
JP2019091951A (ja) 2019-06-13
EP3080844A1 (en) 2016-10-19
US20150170972A1 (en) 2015-06-18
EP3080844A4 (en) 2017-07-12
JP6685442B2 (ja) 2020-04-22

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