CN105789062B - 封装件结构及其形成方法 - Google Patents

封装件结构及其形成方法 Download PDF

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CN105789062B
CN105789062B CN201410817657.7A CN201410817657A CN105789062B CN 105789062 B CN105789062 B CN 105789062B CN 201410817657 A CN201410817657 A CN 201410817657A CN 105789062 B CN105789062 B CN 105789062B
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forming
redistribution structure
integrated circuit
circuit die
insulating layer
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CN105789062A (zh
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余振华
叶德强
陈宪伟
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本文讨论了封装件的形成方法和结构。在实施例中，方法包括形成背侧重分布结构，以及在形成背侧重分布结构之后，将第一集成电路管芯粘附至背侧重分布结构。该方法还包括用密封剂密封背侧重分布结构上的第一集成电路管芯，在密封剂上形成前侧重分布结构，以及将第二集成电路管芯电连接至第一集成电路管芯。第二集成电路管芯通过机械附接至前侧重分布结构的第一外部电连接件电连接至第一集成电路管芯。

Description

封装件结构及其形成方法
技术领域
本发明涉及封装件结构及其形成方法。
背景技术
半导体器件用于各种电子应用，作为实例，诸如个人计算机、手机、数码相机以及其他电子设备。通常通过在半导体衬底上方依次沉积绝缘或介电层、导电层和半导体材料层，以及使用光刻图案化各种材料层以在半导体衬底上形成电路组件和元件来制造半导体器件。通常在单个半导体晶圆上制造数十个或数百个集成电路。通过沿着划线锯切集成电路分割单独的管芯。然后分别封装单独的管芯，例如，以多芯片模块或以其他的封装类型。
半导体工业通过持续减小最小部件尺寸来不断改进各种电子组件(例如，晶体管、二极管、电阻器、电容器等)的集成密度，其允许将更多组件集成至给定区域内。在一些应用中，这些更小的电子组件(诸如集成电路管芯)可能也需要比过去的封装件利用更少的面积的更小的封装件。
发明内容
为了解决现有技术中存在的问题，根据本发明的一个方面，提供了一种方法，包括：形成背侧重分布结构；在形成所述背侧重分布结构之后，将第一集成电路管芯粘附至所述背侧重分布结构；用密封剂密封位于所述背侧重分布结构上的第一集成电路管芯；在所述密封剂上形成前侧重分布结构；以及将第二集成电路管芯电连接至所述第一集成电路管芯，所述第二集成电路管芯通过机械附接至所述前侧重分布结构的第一外部电连接件电连接至所述第一集成电路管芯。
在上述方法中，在形成所述前侧重分布结构之后，所述第一集成电路管芯的有源侧朝向所述前侧重分布结构。
在上述方法中，还包括在所述密封之前形成通孔，其中，在所述密封之后，所述通孔延伸穿过所述密封剂。
在上述方法中，还包括在所述背侧重分布结构上形成第二外部电连接件。
在上述方法中，在将所述第二集成电路管芯电连接至所述第一集成电路管芯之后，实施所述第二外部电连接件的形成。
在上述方法中，还包括在所述第二外部电连接件周围形成环氧助焊剂。
在上述方法中，所述第二集成电路管芯位于封装件中，所述封装件通过所述第一外部电连接件机械附接至所述前侧重分布结构。
在上述方法中，所述第二集成电路管芯通过所述第一外部电连接件直接机械附接至所述前侧重分布结构。
根据本发明的另一方面，还提供了一种方法，包括：形成第一重分布结构；将第一集成电路管芯的背侧粘附至所述第一重分布结构；在所述粘附之后，用密封剂密封位于所述第一重分布结构上的第一集成电路管芯；在所述密封剂上形成第二重分布结构，所述第一集成电路管芯的有源侧朝向所述第二重分布结构；以及使用机械附接至所述第二重分布结构的第一外部电连接件，将第二集成电路管芯附接至所述第二重分布结构。
在上述方法中，还包括在所述第一重分布结构上形成第二外部电连接件。
在上述方法中，在将所述第二集成电路管芯附接至所述第二重分布结构之后，实施所述第二外部电连接件的形成。
在上述方法中，还包括在所述第二外部电连接件周围形成环氧助焊剂。
在上述方法中，所述第二集成电路管芯位于封装件中，所述封装件通过所述第一外部电连接件机械附接至所述第二重分布结构。
在上述方法中，所述第二集成电路管芯通过所述第一外部电连接件直接机械附接至所述第二重分布结构。
根据本发明的又一方面，还提供了一种结构，包括：第一封装件，包括：第一集成电路管芯，具有有源侧和与所述有源侧相对的背侧，密封剂，横向地密封所述第一集成电路管芯，所述密封剂的第一表面与所述第一集成电路管芯的有源侧上的管芯连接件的表面共平面，所述密封剂的第二表面与所述密封剂的第一表面相对，第一重分布结构，位于所述密封剂的第一表面上，和第二重分布结构，位于所述密封剂的第二表面上；以及第二集成电路管芯，通过第一外部电连接件电连接至所述第一集成电路管芯，所述第一外部电连接件机械附接至所述第一重分布结构。
在上述结构中，还包括机械附接至所述第二重分布结构的第二外部电连接件。
在上述结构中，还包括位于所述第二外部电连接件周围的环氧助焊剂。
在上述结构中，所述第二外部电连接件通过凸块下金属机械附接至所述第二重分布结构。
在上述结构中，还包括第二封装件，所述第二封装件包括所述第二集成电路管芯，所述第二封装件机械附接至所述第一外部电连接件。
在上述结构中，所述第一外部电连接件直接机械附接至所述第二集成电路管芯。
附图说明
当结合附图进行阅读时，从下面详细的描述可以最佳地理解本发明的各方面。应该注意，根据工业中的标准实践，各种部件未按比例绘制。实际上，为了清楚的讨论，各种部件的尺寸可以被任意增大或缩小。
图1至图13是根据一些实施例的用于形成叠层封装件结构的工艺中的中间步骤的截面图。
图14是根据一些实施例的叠层封装件结构。
图15是根据一些实施例的叠层封装件结构。
图16是根据一些实施例的叠层封装件结构。
图17是根据一些实施例的叠层封装件结构。
图18是根据一些实施例的封装件上管芯结构。
具体实施方式
为了实施所提供的主题的不同特征，本发明提供了许多不同的实施例或实例。以下描述组件和布置的特定实例以简化本发明。当然这些仅仅是实例并不打算限定。例如，以下描述中第一部件形成在第二部件上方或上可以包括其中第一和第二部件以直接接触的方式形成的实施例，并且也可以包括其中在第一和第二部件之间可以形成额外的部件，使得第一和第二部件不直接接触的实施例。此外，本发明可以在各个实例中重复参照标号和/或字符。该重复是为了简明和清楚的目的，并且其本身并不指示所讨论的各个实施例和/或配置之间的关系。
另外，为了便于描述，本文中可以使用诸如“下面”、“在…之下”、“下”、“在…之上”、“上部”、“最上面的”等的空间相对位置术语以描述如附图中示出的一个元件或部件与另一个(或另一些)元件或部件的关系。同样地，本文可以使用诸如“前侧”和“背侧”的术语以便更容易地识别各个组件，并且可以识别例如位于另一组件的相对侧上的那些部件。空间相对位置术语意图涵盖器件在使用或操作中的除了附图中示出的方位之外的不同方位。装置可以以其他方位定向(旋转90度或处于其他方位)并且本文使用的空间相对位置描述符可以同样地作出相应的解释。
可以在具体的环境中讨论本文讨论的实施例，即具有扇出或扇入晶圆级封装件的叠层封装件或封装件上管芯结构。其他实施例考虑其他应用，诸如不同的封装件类型或对于阅读了本发明的本领域普通技术人员而言显而易见的不同结构。应该注意，本文讨论的实施例可以不需要示出在结构中可能存在的每个组件或部件。例如，可以从附图省略多个组件，诸如当对组件中的一个的讨论可以足以传达实施例的各方面时。另外，可以将本文讨论的方法实施例讨论成以特定的顺序实施；但是，可以以任何逻辑顺序实施其他方法实施例。
图1至图13根据一些实施例示出了用于形成叠层封装件结构的工艺中的中间步骤的截面图。图1示出载体衬底20、在载体衬底20上形成的脱模层22以及在脱模层22上形成的介电层24。载体衬底20可以是玻璃载体衬底、陶瓷载体衬底等。载体衬底20可以是晶圆。脱模层22可以由聚合物基材料形成，其可以从在随后的步骤中将形成的上面的结构中同载体衬底20一起去除。在一些实施例中，脱模层22是环氧树脂基热脱模材料，当加热时其失去它的粘附性能，诸如光热转换(LTHC)脱模涂层(coating)。在其他实施例中，脱模层22可以是紫外(UV)粘合剂，当暴露至UV光时其失去它的粘附性能。脱模层22可以作为液体分配并且固化，可以是层压在载体衬底20上的层压膜等。脱模层22的顶面可以是水平的并且可以具有高度的共平面性。
在脱模层22上形成介电层24。介电层24的底面可以与脱模层22的顶面接触。在一些实施例中，介电层24由诸如聚苯并恶唑(PBO)、聚酰亚胺、苯并环丁烯(BCB)等的聚合物形成。在其他实施例中，介电层24由诸如氮化硅的氮化物；诸如氧化硅、磷硅酸盐玻璃(PSG)、硼硅酸盐玻璃(BSG)、硼掺杂的磷硅酸盐玻璃(BPSG)的氧化物等形成。介电层24可以通过诸如旋转涂覆、化学汽相沉积(CVD)、层压等或它们的组合的任何可接受的沉积工艺形成。
参照图2，形成背侧重分布结构40。背侧重分布结构40可以包括任何数量的介电层28、金属化图案26和通孔30。如图所示，背侧重分布结构40包括三个介电层28，每层均具有各自的金属化图案26。
首先在介电层24上形成金属化图案26。作为用于形成金属化图案26的实例，在介电层24的上方形成晶种层(未示出)。在一些实施例中，晶种层是金属层，其可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和钛层上方的铜层。例如，晶种层可以使用物理汽相沉积(PVD)等形成。然后在晶种层上形成并且图案化光刻胶。光刻胶可以通过旋转涂覆等形成并且可以暴露至光以便图案化。光刻胶的图案对应于金属化图案26。图案化形成了穿过光刻胶的开口以暴露晶种层。导电材料在光刻胶的开口中形成以及在晶种层的暴露部分上形成。导电材料可以通过镀形成，诸如电镀或化学镀等。导电材料可以包括金属，如铜、钛、钨、铝等。然后，去除光刻胶和其上未形成导电材料的晶种层的部分。光刻胶可以通过可接受的灰化或剥离工艺去除，诸如使用氧等离子体等。一旦去除光刻胶，则去除晶种层的暴露的部分，诸如通过使用可接受的蚀刻工艺，诸如通过湿蚀刻或干蚀刻。晶种层的剩余部分和导电材料形成金属化图案26。
在金属化图案26和介电层24上形成介电层28。在一些实施例中，介电层28由聚合物形成，聚合物可以是可以使用光刻掩模图案化的诸如PBO、聚酰亚胺、BCB等的光敏材料。在其他实施例中，介电层28由诸如氮化硅的氮化物；诸如氧化硅、PSG、BSG、BPSG等的氧化物形成。介电层28可以通过旋转涂覆、层压、CVD等或它们的组合形成。然后图案化介电层28以形成开口从而暴露金属化图案26的部分。图案化可以通过可接受的工艺，诸如当介电层是光敏材料时通过将介电层28暴露至光或通过使用例如各向异性蚀刻的蚀刻。
可以通过重复用于形成金属化图案26和介电层28的工艺而在背侧重分布结构40中形成一个或多个额外的金属化图案26和介电层28。在金属化图案26的形成期间，可以通过在下面的介电层28的开口中形成晶种层和金属化图案26的导电材料来形成通孔30。因此，通孔30可以互连并且电连接各个金属化图案。
参照图3，形成通孔42。作为形成通孔42的实例，在背侧重分布结构40上方形成晶种层，例如如图所示的最上面的介电层28和最上面的金属化图案26的暴露部分。在一些实施例中，晶种层是金属层，其可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和钛层上方的铜层。例如，晶种层可以使用PVD等形成。然后在晶种层上形成并且图案化光刻胶。光刻胶可以通过旋转涂覆等形成并且可以暴露至光以便图案化。光刻胶的图案对应于通孔。图案化形成了穿过光刻胶的开口以暴露晶种层。在光刻胶的开口中形成以及在晶种层的暴露部分上形成导电材料。导电材料可以通过镀形成，诸如电镀或化学镀等。导电材料可以包括金属，如铜、钛、钨、铝等。然后，去除光刻胶和其上未形成导电材料的晶种层的部分。光刻胶可以通过可接受的灰化或剥离工艺去除，诸如使用氧等离子体等。一旦去除光刻胶，则去除晶种层的暴露的部分，诸如通过使用可接受的蚀刻工艺，诸如通过湿蚀刻或干蚀刻。晶种层的剩余部分和导电材料形成通孔42。
在图4中，集成电路管芯44通过粘合剂46粘附至介电层28。如图所示，粘附两个集成电路管芯44，而且在其他实施例中，可以粘附一个集成电路管芯或多个集成电路管芯。在将集成电路管芯44粘附至介电层28之前，可以根据可应用的制造工艺处理集成电路管芯44以在集成电路管芯44中形成集成电路。例如，每个集成电路管芯44均包括半导体衬底，诸如掺杂或未掺杂的硅、或绝缘体上半导体(SOI)衬底的有源层。半导体衬底可以包括诸如锗的其他半导体材料；包括碳化硅、砷化镓、磷化镓、磷化铟、砷化铟和/或锑化铟的化合物半导体；包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP和/或GaInAsP的合金半导体；或它们的组合。也可以使用其他衬底，诸如多层或梯度衬底。诸如晶体管、二极管、电容器、电阻器等的器件可以在半导体衬底中和/或上形成并且可以通过互连结构来互连以形成集成电路，其中，互连结构由例如半导体衬底上的一个或多个介电层中的金属化图案形成。
集成电路管芯44还包括焊盘48(诸如铝焊盘)，与焊盘48建立外部连接。焊盘48位于可以称为集成电路管芯44的相应的有源侧上。钝化膜50位于集成电路管芯44上和焊盘48的部分上。开口穿过钝化膜50至焊盘48。诸如导电柱(例如，包括诸如铜的金属)的管芯连接件52位于穿过钝化膜50的开口中，并且机械连接且电连接至相应的焊盘48。管芯连接件52可以通过例如镀等形成。管芯连接件52电连接集成电路管芯44的相应集成电路。为了清楚和简洁，在每个集成电路管芯44上示出一个管芯连接件52，而本领域普通技术人员应该容易地理解可以存在不止一个管芯连接件52。
介电材料54位于集成电路管芯44的有源侧上，诸如位于钝化膜50和管芯连接件52上。介电材料54横向地密封管芯连接件52，并且介电材料54与相应的集成电路管芯44横向地共末端。介电材料54可以是诸如PBO、聚酰亚胺、BCB等的聚合物；诸如氮化硅等的氮化物；诸如氧化硅、PSG、BSG、BPSG等的氧化物；它们的类似物或它们的组合，并且介电材料54可以通过例如旋转涂覆、层压、CVD等形成。
粘合剂46在集成电路管芯44的背侧上并且将集成电路管芯44粘附至背侧重分布结构40，诸如粘附至示出的最上面的介电层28。粘合剂46可以是任何合适的粘合剂、环氧树脂等。可以将粘合剂46施加至集成电路管芯44的背侧，诸如施加至相应的半导体晶圆的背侧。可以分割集成电路管芯44，诸如通过锯切或划切，以及使用例如拾取和放置工具通过粘合剂46粘附至介电层28。
在图5中，在各个组件上形成密封剂60。密封剂60可以是模塑料、环氧树脂等，并且可以通过压缩模塑法、传递模塑法等施加。在图6中，在固化之后，密封剂60经历研磨工艺以暴露通孔42和管芯连接件52。在研磨工艺之后，通孔42、管芯连接件52和密封剂60的顶面共平面。在一些实施例中，例如如果通孔42和管芯连接件52已经暴露，则可以省略研磨。
在图7中，形成前侧重分布结构80。前侧重分布结构80可以包括任何数量的介电层70和76、金属化图案72、以及通孔74。如图所示，前侧重分布结构80包括介电层70和两层介电层76，每层介电层均具有相应的金属化图案72。
在密封剂60、通孔42和管芯连接件52上形成介电层70。在一些实施例中，介电层70由聚合物形成，聚合物可以是诸如PBO、聚酰亚胺、BCB等的可以使用光刻掩模容易地图案化的光敏材料。在其他实施例中，介电层70由诸如氮化硅的氮化物；诸如氧化硅、PSG、BSG、BPSG等的氧化物等形成。可以通过旋转涂覆、层压、CVD等或它们的组合形成介电层70。然后图案化介电层70形成开口以暴露通孔42的部分。图案化可以通过可接受的工艺实施，诸如当介电层是光敏材料时将介电层70暴露至光或通过使用例如各向异性蚀刻的蚀刻。
首先在介电层70上形成具有通孔74的金属化图案72。作为形成金属化图案72的实例，在介电层70的上方形成晶种层(未示出)。在一些实施例中，晶种层是金属层，其可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和钛层上方的铜层。晶种层可以使用例如PVD等形成。然后在晶种层上形成并且图案化光刻胶。光刻胶可以通过旋转涂覆等形成并且可以暴露至光以便图案化。光刻胶的图案对应于金属化图案72。图案化形成穿过光刻胶的开口以暴露晶种层。在光刻胶的开口中以及晶种层的暴露部分上形成导电材料。导电材料可以通过镀形成，诸如电镀或化学镀等。导电材料可以包括金属，如铜、钛、钨、铝等。然后，去除光刻胶和其上未形成导电材料的晶种层的部分。光刻胶可以通过可接受的灰化或剥离工艺去除，诸如使用氧等离子体等。一旦去除光刻胶，则去除晶种层的暴露部分，诸如通过使用可接受的蚀刻工艺，诸如通过湿蚀刻或干蚀刻。晶种层的剩余部分和导电材料形成金属化图案72和通孔74。通孔74在下面的层(例如，介电层70)中的开口中形成。
在金属化图案72和介电层70上形成介电层76。在一些实施例中，介电层76由聚合物形成，聚合物可以是诸如PBO、聚酰亚胺、BCB等的可以使用光刻掩模容易地图案化的光敏材料。在其他实施例中，介电层76由诸如氮化硅的氮化物；诸如氧化硅、PSG、BSG、BPSG等的氧化物形成。介电层76可以通过旋转涂覆、层压、CVD等或它们的组合形成。然后图案化介电层76形成开口以暴露金属化图案72的部分。图案化可以通过可接受的工艺实施，诸如当介电层是光敏材料时将介电层76暴露至光或通过使用例如各向异性蚀刻的蚀刻。
可以通过重复用于形成金属化图案72和介电层76的工艺在前侧重分布结构80中形成一个或多个额外的金属化图案72和介电层76。在金属化图案72的形成期间，可以通过在下面的介电层76的开口中形成晶种层和金属化图案72的导电材料形成通孔74。因此，通孔74可以互连并且电连接各个金属化图案。
在图8中，在前侧重分布结构80的外表面上形成焊盘82，焊盘82可以被称为凸块下金属(UBM)。在示出的实施例中，焊盘82包括穿过最上面的介电层76上的开口的通孔。作为形成焊盘82的实例，在最上面的介电层76上形成晶种层(未示出)。在一些实施例中，晶种层是金属层，其可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和钛层上方的铜层。晶种层可以使用例如PVD等形成。然后在晶种层上形成并且图案化光刻胶。光刻胶可以通过旋转涂覆等形成并且可以暴露至光以便图案化。光刻胶的图案对应于焊盘82。图案化形成穿过光刻胶的开口以暴露晶种层。导电材料在光刻胶的开口中以及晶种层的暴露部分上形成。导电材料可以通过镀形成，诸如电镀或化学镀等。导电材料可以包括金属，如铜、钛、钨、铝等。然后，去除光刻胶和其上未形成导电材料的晶种层的部分。光刻胶可以通过可接受的灰化或剥离工艺去除，诸如使用氧等离子体等。一旦去除光刻胶，则去除晶种层的暴露部分，诸如通过使用可接受的蚀刻工艺，诸如通过湿蚀刻或干蚀刻。晶种层的剩余部分和导电材料形成焊盘82，其可以包括通孔。通孔在下面的层(例如，最上面的介电层76)中的开口中形成。
为了方便，图8中示出的结构将被称为第一封装件100。在示出的实施例中，第一封装件包括背侧重分布结构40、集成电路管芯44、密封剂60、前侧重分布结构80、以及其中的各种电互连件和连接件。由于前侧是集成电路管芯44的有源侧面对的封装件的一侧，所以第一封装件的前侧(例如，其上是前侧重分布结构80的一侧)也可以被称为第一封装件的“正面”或“正面侧”。如图所示，处理可以继续并且可以对第一封装件100实施。
在图9中，将第二封装件102附接至第一封装件100。第二封装件102可以是和/或包括任何封装组件。例如，如图所示，第二封装件102包括衬底、衬底上的两个堆叠的集成电路管芯、将集成电路管芯电连接至衬底的引线接合件、以及密封堆叠的集成电路管芯和引线接合件的密封剂。在实例中，第二封装件102的集成电路管芯是存储管芯，诸如动态随机存取存储(DRAM)管芯。第二封装件102通过附接至焊盘82的外部电连接件84电连接并且机械连接至第一封装件。在一些实施例中，外部电连接件84可以包括低温可回流材料，诸如焊料，诸如无铅焊料，并且在额外的实施例中，外部电连接件84可以包括金属柱。在一些实施例中，外部电连接件84是可控塌陷芯片连接(C4)凸块、微凸块等。在一些实施例中，可以回流外部电连接件84以将第二封装件102附接至第一封装件的焊盘82。第二封装件102的集成电路管芯通过例如第二封装件102中的引线接合件和衬底、外部电连接件84、以及前侧重分布结构80电连接并且通信连接至第一封装件100的集成电路管芯44。
在图10中，实施载体衬底脱粘(de-bonding)以从第一封装件分离(脱粘)载体衬底20。根据一些实施例，脱粘包括对脱模层22投射诸如激光或UV光的光，从而脱模层22在光的热量下分解并且可以去除载体衬底20。然后翻转结构并且放置在胶带110上。然后可以在背侧重分布结构40上可选地形成背侧膜112，诸如形成在介电层24上。背侧膜112可以是聚合物类膜、树脂、环氧树脂等。背侧膜112可以补偿随后的处理期间的翘曲，诸如回流工艺期间的热循环。
在图11中，形成穿过介电层24的开口114以暴露最上面的金属化图案26的部分。例如，可以使用激光打孔、蚀刻等形成开口114。
在图12中，焊盘116(诸如UBM)和外部电连接件118(诸如焊球，如球栅阵列(BGA)球)穿过开口114在最上面的金属化图案26上形成。焊盘116可以在开口114中形成并且可以与最上面的金属化图案26电接触。焊盘116可以包括三层导电材料，诸如钛层、铜层和镍层。材料和层的其他布置可以用于焊盘116的形成，诸如铬/铬铜合金/铜/金的布置、钛/钛钨/铜的布置或铜/镍/金的布置。可以通过在介电层24和/或背侧膜112的上方以及沿着开口114的内部至最上面的金属化图案26形成每个层来形成焊盘116。可以使用镀工艺形成每个层，诸如电镀或化学镀等，但是可以使用其他形成工艺，诸如溅射、蒸发、或PECVD工艺。一旦期望的层已经形成，然后可以通过合适的光刻掩模和蚀刻工艺去除层的部分以去除不期望的材料并且使得焊盘116具有期望的形状。在其他实施例中，可以省略焊盘116。
在焊盘116上形成外部电连接件118。外部电连接件118可以包括低温可回流材料，诸如焊料，其可以是无铅或含铅的。可以通过使用合适的落球工艺(ball drop process)形成外部电连接件118。在其中省略焊盘116的其他实施例中，外部电连接件穿过开口114直接形成在金属化图案26上。
在图13和14中，从胶带110去除第一封装件100和第二封装件102。因此，形成叠层封装件结构。图13示出具有焊盘116的实施例，而图14示出其中省略焊盘116的实施例。
图15和16分别示出图13和14的叠层封装件结构，改变是包括环氧助焊剂120，环氧助焊剂120在围绕外部电连接件118的区域中并且位于外部电连接件118和背侧膜112(例如，如果存在)和/或背侧重分布结构40的介电层24之间的区域中。环氧助焊剂120可以在外部电连接件118周围形成密封件从而有助于防止湿气或其他污染物渗透外部连接件118、焊盘116、背侧膜112和/或介电层24之间的接合处。可以在形成外部连接件118之后以及从图12和13中的胶带110去除封装件之前施加环氧助焊剂120。
图17示出图15的叠层封装件结构，改变是包括前侧膜130。前侧膜130可以类似于背侧膜112并且可以在前侧重分布结构80上形成，诸如形成在介电层76上。前侧膜130可以是聚合物类膜、树脂、环氧树脂等，并且可以在图9中的附接第二封装件之前通过旋涂或层压技术来形成。尽管未示出，前侧膜130可以在图16的叠层封装件结构中形成。
图18示出另一实施例。在该实施例中，集成电路管芯140和142通过外部电连接件84直接附接至第一封装件100的前侧重分布结构80。相应地，可以形成封装件上管芯结构。可以包含图13至图17中讨论的封装件的各种改变。
本文已经讨论了叠层封装件结构或封装件上管芯结构的各种改变。然而，本领域普通技术人员应该容易地理解可以作出其他改变并且可以以各种组合包含或省略各种改变。例如，(1)可以包含或省略焊盘82和/或116；(2)可以包含或省略背侧膜112和/或前侧膜130；(3)可以包含或省略环氧助焊剂120；或(4)或它们的组合。如果省略焊盘82和/或116，则外部电连接件84和/或118可以分别在金属化图案72和26上直接形成，在这种情况下可以被称为迹线上凸块或球结构。
各个实施例可以实现各种优势。第一封装件中的一个或多个集成电路管芯可以通信连接至直接附接至第一封装件的一个或多个集成电路管芯，或通信连接至嵌入在与第一封装件附接的第二封装件中的一个或多个集成电路管芯。由于第二封装件和/或集成电路管芯附接至第一封装件的前侧或“正面侧”，可能会使得电连接第一封装件中的或第一封装件外部的集成电路管芯的电连接变短。由于更短的电连接，可以降低连接的总电阻。由于电阻降低，降低了连接的电阻-电容(RC)常数，这可以提高电连接上通信的电信号的速度。因此，该集成电路管芯可以以提高的速度运行。
第一实施例是一种方法。该方法包括形成背侧重分布结构，以及在形成背侧重分布结构之后，将第一集成电路管芯粘附至背侧重分布结构。该方法还包括用密封剂密封背侧重分布结构上的第一集成电路管芯，在密封剂上形成前侧重分布结构，以及将第二集成电路管芯电连接至第一集成电路管芯。第二集成电路管芯通过机械附接至前侧重分布结构的第一外部电连接件电连接至第一集成电路管芯。
另一实施例是一种方法。该方法包括形成第一重分布结构；将第一集成电路管芯的背侧粘附至第一重分布结构；在粘附之后，用密封剂密封第一重分布结构上的第一集成电路管芯；在密封剂上形成第二重分布结构，第一集成电路管芯的有源侧朝向第二重分布结构；以及使用机械附接至第二重分布结构的第一外部电连接件，将第二集成电路管芯附接至第二重分布结构。
又一个实施例是一种结构。该结构包括第一封装件，第一封装件包括第一集成电路管芯，横向地密封第一集成电路管芯的密封剂，位于密封剂的第一表面上的第一重分布结构，以及位于密封剂的第二表面上的第二重分布结构。第一集成电路管芯具有有源侧和与有源侧相对的背侧。密封剂的第一表面与第一集成电路管芯的有源侧上的管芯连接件的表面共平面。密封剂的第二表面与密封剂的第一表面相对。该结构还包括通过第一外部电连接件电连接至第一集成电路管芯的第二集成电路管芯。第一外部电连接件机械附接至第一重分布结构。
上面论述了若干实施例的特征，使得本领域技术人员可以更好地理解本发明的各个方面。本领域技术人员应该理解，他们可以容易地使用本发明作为基础来设计或修改用于实施与本文所介绍实施例相同的目的和/或实现相同优势的其他工艺和结构。本领域技术人员也应该意识到，这种等同构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，可以进行多种变化、替换以及改变。

Claims (14)

1.一种形成封装件结构的方法，包括：
在载体衬底上方形成背侧重分布结构，形成所述背侧重分布结构包括：
在所述载体衬底上方形成第一绝缘层；
在所述第一绝缘层上方形成第一金属部件；
在所述第一绝缘层和所述第一金属部件上方形成第二绝缘层；
在所述第二绝缘层上方形成所述背侧重分布结构的最顶金属部件和最顶绝缘层；
在形成所述背侧重分布结构之后，将第一集成电路管芯粘附至所述背侧重分布结构；
在形成所述背侧重分布结构之后，在所述背侧重分布结构上形成通孔，所述通孔穿过所述最顶绝缘层延伸至所述最顶金属部件；
在形成所述背侧重分布结构之后，用密封剂密封位于所述背侧重分布结构上的第一集成电路管芯，其中，所述通孔的远离所述背侧重分布结构的顶面与所述密封剂的顶面平齐；
在形成所述背侧重分布结构之后，在所述密封剂上形成前侧重分布结构，其中，形成所述前侧重分布结构包括：
在所述密封剂上形成第三绝缘层，其中，所述第三绝缘层与所述通孔的顶面物理接触；
在所述第三绝缘层上形成第三金属部件；和
通过形成所述第三绝缘层和所述第三金属部件的工艺，在所述第三绝缘层和所述第三金属部件上重复形成一个或多个额外的绝缘层和金属部件；
将第二集成电路管芯电连接至所述第一集成电路管芯，所述第二集成电路管芯通过机械附接至所述前侧重分布结构的第一外部电连接件电连接至所述第一集成电路管芯；
去除所述载体衬底；
在去除所述载体衬底之后，在所述背侧重分布结构上形成背侧膜；
在所述背侧膜和所述第一绝缘层中形成开口以暴露所述第一金属部件；以及
在所述开口中形成第二外部连接件，
其中，所述第二集成电路管芯的有源面远离所述前侧重分布结构。
2.根据权利要求1所述的方法，其中，在形成所述前侧重分布结构之后，所述第一集成电路管芯的有源侧朝向所述前侧重分布结构。
3.根据权利要求1所述的方法，其中，在所述密封之后，所述通孔延伸穿过所述密封剂。
4.根据权利要求1所述的方法，其中，在所述背侧重分布结构上形成所述第二外部电连接件。
5.根据权利要求4所述的方法，其中，在将所述第二集成电路管芯电连接至所述第一集成电路管芯之后，实施所述第二外部电连接件的形成。
6.根据权利要求4所述的方法，还包括在所述第二外部电连接件周围形成环氧助焊剂。
7.根据权利要求1所述的方法，其中，所述第二集成电路管芯位于封装件中，所述封装件通过所述第一外部电连接件机械附接至所述前侧重分布结构。
8.根据权利要求1所述的方法，其中，所述第二集成电路管芯通过所述第一外部电连接件直接机械附接至所述前侧重分布结构。
9.一种形成封装件结构的方法，包括：
在载体衬底上方形成第一重分布结构，其中，形成所述第一重分布结构包括：
在所述载体衬底上方形成第一绝缘层；
在所述第一绝缘层上方形成第一金属部件；
在所述第一绝缘层和所述第一金属部件上方形成第二绝缘层；
在所述第二绝缘层上方形成所述第一重分布结构的最顶金属部件和最顶绝缘层；
在形成所述第一重分布结构之后，在所述第一重分布结构上形成通孔，所述通孔穿过所述最顶绝缘层延伸至所述最顶金属部件；
在形成所述第一重分布结构之后，将第一集成电路管芯的背侧粘附至所述第一重分布结构；
在所述粘附之后，用密封剂密封位于所述第一重分布结构上的第一集成电路管芯，其中，所述通孔的远离所述第一重分布结构的顶面与所述密封剂的顶面平齐；
在所述密封剂上形成第二重分布结构，所述第一集成电路管芯的有源侧朝向所述第二重分布结构，其中，形成所述第二重分布结构包括：
在所述密封剂上形成第三绝缘层，其中，所述第三绝缘层与所述通孔的顶面物理接触；
在所述第三绝缘层上形成第三金属部件；和
通过形成所述第三绝缘层和所述第三金属部件的工艺，在所述第三绝缘层和所述第三金属部件上重复形成一个或多个额外的绝缘层和金属部件；
使用机械附接至所述第二重分布结构的第一外部电连接件，将第二集成电路管芯附接至所述第二重分布结构，其中，所述第二集成电路管芯的有源面远离所述第二重分布结构；
去除所述载体衬底；
在去除所述载体衬底之后，在所述第一重分布结构上形成背侧膜；
在所述背侧膜和所述第一绝缘层中形成开口以暴露所述第一金属部件；以及
在所述开口中形成第二外部连接件。
10.根据权利要求9所述的方法，其中，在所述第一重分布结构上形成所述第二外部电连接件。
11.根据权利要求10所述的方法，其中，在将所述第二集成电路管芯附接至所述第二重分布结构之后，实施所述第二外部电连接件的形成。
12.根据权利要求10所述的方法，还包括在所述第二外部电连接件周围形成环氧助焊剂。
13.根据权利要求9所述的方法，其中，所述第二集成电路管芯位于封装件中，所述封装件通过所述第一外部电连接件机械附接至所述第二重分布结构。
14.根据权利要求9所述的方法，其中，所述第二集成电路管芯通过所述第一外部电连接件直接机械附接至所述第二重分布结构。
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