CN105765716A - 功率半导体模块和复合模块 - Google Patents

功率半导体模块和复合模块 Download PDF

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Publication number
CN105765716A
CN105765716A CN201580002601.9A CN201580002601A CN105765716A CN 105765716 A CN105765716 A CN 105765716A CN 201580002601 A CN201580002601 A CN 201580002601A CN 105765716 A CN105765716 A CN 105765716A
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power semiconductor
semiconductor modular
resin
lid
circuit board
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CN201580002601.9A
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CN105765716B (zh
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崛元人
池田良成
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

功率半导体模块(1)在筐体(2)内具备将半导体元件(5)的正面电极与绝缘基板(3)的电路板(33)电连接的布线部件(10)。设置在筐体(2)的第二树脂(15)覆盖布线部件(10)，并且设为布线部件(10)附近的高度。在筐体(2)内的第二树脂(15)与第一盖(12)之间设有覆盖外部端子(9a)、(9b)周围的罩(13)。在筐体(2)的开口部设有比第一盖(12)更靠近外侧的第二盖(14)，在第二盖(14)与第一盖(12)之间填充有第一树脂(11)。

Description

功率半导体模块和复合模块
技术领域
本发明涉及一种功率半导体模块以及组合了该功率半导体模块而成的复合模块。
背景技术
功率半导体模块一般具备搭载了作为半导体元件的半导体芯片的绝缘基板。半导体芯片与绝缘基板的电路板通过焊料等接合材料、并且通过键合线和/或导电板而电连接。绝缘基板和半导体芯片收纳于筐体。与筐体内的绝缘基板电连接的外部端子比筐体更向外方延伸。为了提高绝缘性，筐体内通过密封材料而密封。
在图4以截面图示出现有的功率半导体模块的一例。
图4所示的功率半导体模块101具备金属制的底板102。在该底板102上，通过接合材料104接合有绝缘基板103。绝缘基板103包括绝缘板131、设置在绝缘板131的一侧的面的金属板132、设置在绝缘板131的另一侧的面并形成预定电路的电路板133。绝缘基板103的一个例子为DCB(DirectCopperBond：直接铜键合)基板。
IGBT(绝缘栅双极晶体管)等半导体芯片105通过导电性的接合材料106而电连接并机械连接到电路板133。
在底板102的周围设有框体107，该框体107通过接合材料108而接合。由此构成功率半导体模块101的筐体。在框体107，从框体107内侧向外侧延伸的外部端子109与框体107成为一体。外部端子109与半导体芯片105的正面的电极通过键合线110而电连接。
在由框体107包围的空腔中，收纳有半导体芯片105以及绝缘基板103，在该空腔内，填充有密封材料111。由此，确保了半导体芯片105、绝缘基板103、底板102、外部端子109彼此间的绝缘性。
在框体107设有螺栓孔107a。通过将螺栓121插入该螺栓孔107a从而与冷却部件122螺栓结合，由此将功率半导体模块101固定在冷却部件122。在底板102与冷却部件122之间涂布有散热油123，由此使来自半导体芯片105的热通过绝缘基板103有效地传递到冷却部件122。有时也使用导热板来代替散热油123。
另外，还提出了通过汇流条而并联连接多个上述那样的功率半导体模块(专利文献1)。
为了提高上述那样的功率半导体模块101的绝缘性能，有时使用环氧树脂等热固性树脂作为填充在筐体内的密封材料111。另一方面，若在筐体内大量使用热固性树脂作为密封材料111，则在产生以下情况时产生热应力，即产生组装功率半导体模块101时的热履历，以及产生使用时的外部环境的温度变化等。其理由为，因为热固性树脂的线膨胀系数与其他部件的线膨胀系数相差大。并且，由于该热应力，可能会产生键合线110的断裂和/或基板102、框体107的变形等。
键合线110的断裂直接导致功率半导体模块101的故障。另外，由于基板102和/或框体107的变形，导致与冷却部件122的密合度降低，从而热阻增大。并且，由于热阻增大引起半导体芯片105的温度上升，可能会使功率半导体模块101的长期可靠性降低。另外，大量使用热固性树脂还关系到功率半导体模块101的成本上升和/或重量增加。
存在这样的功率半导体装置，即，将凝胶状的树脂例如硅树脂分两层注入到筐体内，将其中第一层树脂注入至不与辅助引线端子接触的位置并使之固化而成(专利文献2)。另外，存在这样的功率半导体装置，即，在填充在容器内部的凝胶剂的上表面和相当于容器上盖的密封板的下表面之间形成空腔，并进一步用硬树脂将设置于密封板的外部端子用的孔堵塞而成(专利文献3)。
然而，在专利文献2和专利文献3中使用的凝胶状的硅树脂的耐热性不如热固性树脂。另外，在高耐压用的功率半导体模块中，硅树脂的绝缘性未必足够。另外，对于专利文献3的以硬树脂堵塞密封板的孔的结构而言，由于密封板的形状复杂，因此制造成本上升。
现有技术文献
专利文献
专利文献1：日本特开第2012-105382号公报
专利文献2：日本特开平第10-270608号公报
专利文献3：日本特开平第2003-68979号公报
发明内容
技术问题
本发明有利地解决了上述问题，其目的在于，提供一种功率半导体模块以及组合了该功率半导体模块而成的复合模块，其中，该功率半导体模块能够成为在高耐压用的功率半导体模块中绝缘性高，并且抑制底板和/或框体的变形等，长期可靠性高的模块。
技术方案
本发明的一个形态的功率半导体模块具备：筐体，具有开口部；电路板，收纳在上述筐体的内部；半导体元件，在正面具有电极，背面被固定于上述电路板；布线部件，将上述半导体元件的电极与上述电路板之间电连接；第一盖，固定于上述筐体的开口部；第二盖，固定于上述筐体的开口部，并且设置在比上述第一盖更靠近外侧的位置；第一树脂，配置在上述第一盖与上述第二盖之间；第二树脂，覆盖上述布线部件并具有露出面，上述露出面比上述第一盖更接近上述布线部件；外部端子，一端电连接且机械连接到上述电路板，另一端比上述第二盖更向外侧突出；以及罩，覆盖上述外部端子，并配置在上述第二树脂的露出面与上述第一盖之间。
另外，本发明的另一形态的复合模块具备多个上述的功率半导体模块，并具备将各功率半导体模块的上述外部端子彼此电连接的汇流条单元。
发明效果
根据本发明的功率半导体模块以及复合模块，能够成为在高耐压用的功率半导体模块中绝缘性高，并且抑制底板和/或壳体的变形等，长期可靠性高的模块。
附图说明
图1是本发明的实施方式一的功率半导体模块的截面图。
图2是实施方式二的功率半导体模块的截面图。
图3是实施方式三的复合模块的截面图。
图4是现有的功率半导体模块的一个例子的截面图。
符号的说明
1、21功率半导体模块
2筐体
3绝缘基板
31绝缘板
32金属板
33电路板
4、6接合材料
5半导体芯片(半导体元件)
7框体
8底板
9a、9b外部端子
9ac、9bc连接部
10布线部件
10a导电板
10b导电柱
11第一树脂
12第一盖
13罩
14第二盖
15第二树脂
15a露出面
41复合模块
42汇流条单元
43、44汇流条
45模塑树脂
具体实施方式
以下，参考附图，对本发明的功率半导体模块的实施方式进行具体说明。应予说明，在本申请的记载中所使用的“电连接且机械连接”的措辞不限于对象物彼此通过直接接合而连接的情况，也包括通过焊料和/或金属烧结材料等导电性的接合材料而使对象物彼此连接的情况。
(实施方式一)
图1是本发明的实施方式一的功率半导体模块的截面图。本实施方式的功率半导体模块是所谓的被称为一合一模块(1-in-1module)的模块，并具有开关元件与续流二极管反向并联连接而成的电路。
图1所示的本实施方式的功率半导体模块1具备：由底板8和框体7构成的筐体2、作为绝缘基板3的一部分的电路板33、作为半导体元件的半导体芯片5、布线部件10、第一盖12、第二盖14、第一树脂11、第二树脂15、外部端子9(9a、9b)、和罩13。
散热用的金属制的底板8具有大致四边形的平面形状。在该底板8上接合有绝缘基板3。绝缘基板3如图1所示，由绝缘板31、设置在绝缘板31的一侧的面的金属板32、以及设置在绝缘板31的另一侧的面并且形成了预定电路的电路板33所构成。绝缘基板3的金属板32与底板8的主面通过焊料等接合材料4接合。绝缘板31例如包括氮化铝、氮化硅、或氧化铝等绝缘性陶瓷，金属板32、电路板33例如包括铜。并且，电路板33在图示的示例中，具有形成了预定电路的电路板33a、33b。绝缘基板3能够使用使这些绝缘板31与金属板32、电路板33直接接合而成的DCB基板等。
半导体芯片5在正面和背面分别设有电极。并且，背面的电极经由焊料等导电性的接合材料6而与电路板33a电连接且机械连接。具体来说，半导体芯片5例如为肖特基势垒二极管、功率MOSFET(MetalOxideSemiconductorFieldEffectTransistor：金属氧化物半导体场效应晶体管)、或IGBT(InsulatedGateBipolarTransistor：绝缘栅双极晶体管)。半导体芯片5可以包括硅半导体，也可以包括SiC半导体。在半导体芯片5是IGBT的情况下，背面的电极为集电极，正面的电极为发射电极和栅电极。在半导体芯片5是包括碳化硅(SiC)的功率MOSFET的情况下，与包括硅的半导体芯片相比，能够在高耐压且高频的情况下进行开关，因此其作为本实施方式的功率半导体模块的半导体芯片5是最优选的。当然，半导体芯片5不限于IGBT或功率MOSFET，可以是一个能够进行开关动作的半导体元件或多个该半导体元件的组合。
在底板8的周缘设有框体7。框体7具有框形，包括绝缘性、耐热性、成形性良好的树脂，例如环氧树脂、PPS(PolyphenyleneSulfide：聚苯硫醚)、或PBT(Polybutyleneterephthalate：聚对苯二甲酸丁二酯)等。另外，框体7也可以为陶瓷。框体7的下端部与底板8的主面的周缘通过粘接剂接合，通过框体7和底板8构成了功率半导体模块1的筐体2。在筐体2内收纳有绝缘基板3和/或半导体芯片5。外部端子9a、9b的一端电连接且机械连接到筐体2内的电路板33a、33b。外部端子9a、9b的另一端向上方延伸，比后述的第二盖更向外侧突出，构成连接部9ac、9bc。
在功率半导体模块1设有布线部件10。布线部件10由导电板10a和导电柱10b构成。导电板10a与半导体芯片5以及绝缘基板3的电路板33相向设置。并且，导电柱10b的一端电连接且机械连接到半导体芯片5的第二电极或绝缘基板3的电路板33，导电柱10b的另一端电连接且机械连接到导电板10a。
通过布线部件10，将例如半导体芯片5的正面电极与电路板33b电连接。在本实施方式中，与键合线相比，布线部件更优选以导电板10a和导电柱10b构成的布线部件10。如后述那样在本实施方式中，注入至框体7内的第二树脂15为热固性树脂，因此在布线部件为键合线的情况下，可能会由于热固性树脂与其他部件的线膨胀系数不同而导致键合线断裂。与此相对，在布线部件由导电板10a和导电柱10b构成的情况下，即使为热固性的第二树脂15，也不会发生断裂等，另外，也能够避免底板8和/或框体7的过度的变形，能够使长期可靠性和高绝缘性能并存。布线部件10在例如半导体芯片5为IGBT的情况下，将正面电极中的发射电极与绝缘基板3的电路板33b电连接。另外，布线部件10将正面电极中的栅电极与绝缘基板3的电路板33c(未图示)电连接。
导电板10a和/或导电柱10b包括例如导电性好的铜。另外，对导电板10a和/或导电柱10b而言，可以根据需要在表面进行镀覆。导电柱10b的外形可以为圆柱形状、长方体形状等形状，但无特别限定。导电柱10b的底面的尺寸比半导体芯片5的正面电极小。进一步地，相对于一个半导体芯片5，导电柱10b的设置数量为任意，一个正面电极可以结合多个导电柱10b。
导电板10a与导电柱10b通过焊料和/或钎焊电连接且机械连接。由于功率半导体模块1使用了预先将导电板10a和导电柱10b一体化而成的布线部件10，因此能够简化其制造工序。
另外，导电板10a不限于铜板，也可以是金属层形成在绝缘板的至少一侧的表面而成的电路基板，该金属层由铜和/或铝等导电性金属形成。在为电路基板的情况下，优选为具有至少两层的金属层的结构。一层是用于将半导体芯片5的正面电极中的发射电极与绝缘基板3的电路板33b电连接的金属层。另一层是用于将半导体芯片5的正面电极中的栅电极与绝缘基板3的电路板33c(未图示)电连接的金属层。
在筐体2内注入有第二树脂15，将绝缘基板3、半导体芯片5和布线部件10密封，并形成第二树脂15的露出面15a。第二树脂15从绝缘性高、进一步地能够耐高温使用的观点考虑，优选采用例如环氧树脂作为热固性的树脂。第二树脂15覆盖布线部件10，且以布线部件10的上端附近的高度注入。具体来说，露出面15a被配置在比布线部件10的上端高1mm左右的高度。例如，在将从底板8的上表面开始至布线部件10的上端为止的高度设为10mm左右的情况下，可以将露出面15a设在从底板8的上表面起算11mm左右的高度。第二树脂15的注入量越多，在筐体2内越容易产生由第二树脂15引起的热应力，功率半导体模块的长期可靠性降低。另外，从成本和轻量化的观点考虑也是不利的。因此，在本实施方式中，将第二树脂15的注入量设为仅将上述的布线部件10覆盖所需的最小限度。由此，能够抑制功率半导体模块1的变形，并且能够避免功率半导体模块1的成本上升、重量增加。另外，通过如上述那样由导电板10a和导电柱10b构成布线部件，从而与现有示例的利用键合线而成的布线相比，能够正确地控制布线部件的上端的高度。因此，能够将第二树脂15的注入量控制到如上述那样所需的且最小限度的量，因此是有效的。
可以将筐体2内的相对于露出面15a位于上侧的区域设为空腔。通过在该区域设置空腔，确保底板8与外部端子的连接部9ac、9bc之间的距离，从而能够确保功率半导体模块1的高耐压特性。另外，作为其他例子，也可以将在相对于第二树脂15位于上侧的区域注入与包括树脂的密封材料不同的其他密封材料，例如凝胶状的密封材料，从而确保绝缘性。
以卡止于设在框体7的阶梯部7a并覆盖筐体2的开口部的方式设有的第一盖12。第一盖12包括绝缘性、耐热性、成形性良好的树脂，例如环氧树脂、PPS或PBT等。也可以为陶瓷。另外，在第一盖12设有孔，使得外部端子9a、9b穿过该孔。
在第一盖12与第二树脂15的露出面15a之间的空腔，以覆盖外部端子9的周围的方式设有罩13。在一个示例中，罩13为中空的圆筒形状，内径为能够插入外部端子9a、9b的大小。罩13包括绝缘性、耐热性、成形性良好的树脂，例如环氧树脂、PPS或PBT等。只要罩13的上端与第一盖12抵接，且罩13的下端到达第二树脂15内就不特别地限定位置。应予说明，在图1所示的示例中，罩13的下端到达电路板33为止。另外，作为其他例子，在图3所示的示例中，罩13的下端配置在第二树脂15的露出面15a的附近。
通过在第一盖12与第二树脂15之间的空腔利用罩13覆盖外部端子9a、9b，由此使外部端子9a、9b不暴露在空腔，从而维持了绝缘性。因此，能够确保功率半导体模块1的高耐压特性。另外，第一盖1与罩13的组合不是如专利文献3所记载的密封板那样的复杂形状，因此容易制造，且制造成本低地完成。
在比第一盖12更靠近筐体2的外侧设有第二盖14。第二盖14与第一盖12同样，包括绝缘性、耐热性、成形性良好的树脂，例如环氧树脂、PPS或PBT等。另外，第二盖14也可以为陶瓷。在第二盖14也与第一盖12同样地设有孔，从而使外部端子9a、9b穿过。
在第一盖12与第二盖14之间填充有第一树脂11。第一树脂11与第二树脂15同样，作为绝缘性高的热固性的绝缘性树脂，优选环氧树脂。
通过在第一盖12与第二盖14之间填充了第一树脂11，能够提高功率半导体模块1的高耐压特性。另外，被充填的第一树脂11以与外部端子9a、9b接触的方式配置。并且，第一树脂11以填满供设置在第一盖12和第二盖14的外部端子9a、9b插通的孔与外部端子9a、9b之间的空隙的方式配置。由此，能够确保筐体2的内部与功率半导体模块1的外部的绝缘，能够确保功率半导体模块1的高耐压特性。
进一步地，第一树脂11还可以填满在第一盖12与罩13的抵接部位所产生的空隙，这点也对高耐压特性有利。第一树脂11在第二盖14与第一盖12之间具有1mm左右的厚度就足够，因此将第二盖14与第一盖12之间的间隙设为1mm左右。
更进一步地，第一树脂11还用作在填满第一盖12和第二盖14与框体7之间的空隙同时将盖12、14固定于框体7的粘合材料。由此，能够确保高耐压特性，并且不需要另行准备粘接盖与框体的粘接材料，因此还能够降低制造成本。
对本实施方式的功率半导体模块1而言，长期可靠性高，另一方面，将包括线膨胀系数大、热应力大的热固性树脂的第二树脂15设为覆盖布线部件10所需要的最少限度的量。并且，通过在筐体2内的第二树脂15与开口部之间设置空腔，确保了爬电距离。另外，在该空腔内，通过利用罩13覆盖外部端子9a、9b，从而确保了外部端子9a、9b附近的绝缘性。进一步地，通过设置第二盖14和第一盖，并在它们之间填充第一树脂11，从而提高了在筐体2的开口部的绝缘性。因此，本实施方式的功率半导体模块1能够维持长期可靠性，并且能够得到高绝缘性。
功率半导体模块1与现有的功率半导体模块同样，通过螺栓等被固定于冷却部件(未图示)。并且，为了延长接地的冷却部件与外部端子之间的爬电距离，从而提高绝缘性，在本实施方式中，在框体7的外表面7b设有凹凸。这些凹凸与上述结构相互结合，有利于功率半导体模块1的高耐压特性。通过本实施方式，得到了一种具备例如耐压在13kV以上这样非常高的耐压特性的功率半导体模块。应予说明，功率半导体模块1的耐压特性由从冷却部件至外部端子9a、9b的连接部9ac、9bc为止的高度决定。因此，只要根据所希望的耐压特性对第二树脂15与第一盖12的间隔进行适当调整，并设置需要长度的外部端子9a、9b即可。
(实施方式二)
在图2示出本发明的实施方式二的功率半导体模块的截面图。在图2中，对与图1所示的实施方式一的功率半导体模块1相同的部件标记相同的符号。因此，在以下描述的实施方式二的功率半导体模块的说明中，省略了对与图1所示的实施方式一的功率半导体模块1相同的部件的重复说明。
图2所示的实施方式二的功率半导体模块21与图1所示的实施方式一的功率半导体模块1的区别点在于，在从第二盖14向外侧突出的多个外部端子9a、9b(具体来说，例如P端子和N端子)之间，设置有第二盖14的突起14a。通过设置突起14a，能够提高外部端子9a、9b之间的绝缘性，进而能够进一步提高功率半导体模块21的绝缘性。
(实施方式三)
在图3示出本发明的实施方式三的复合模块的截面图。在图3中，对与图2所示的实施方式二的功率半导体模块21相同的部件标记相同的符号。因此，在以下描述的实施方式三的复合模块的说明中，省略了对与实施方式二的功率半导体模块21相同的部件的重复说明。
图3所示的复合模块41具备两个功率半导体模块21。并且，具备在两个功率半导体模块21中使对应的相同的外部端子9a、9b彼此电连接的汇流条单元42。汇流条单元42具有例如使P端子用的外部端子9a相互连接的汇流条43和使N端子用的外部端子9b相互连接的汇流条44，并通过绝缘性的模塑树脂45使汇流条43、44一体成形而成。通过该结构，构成了并联连接多个作为一合一模块的功率半导体模块21而使额定电流容量增加而成的一合一模块。汇流条43与外部端子9a的连接和/或汇流条44与外部端子9b的连接通过螺栓固定、焊料、激光焊接等而进行。另外，模塑树脂45例如为环氧树脂、PPS、PBT等。汇流条43具有与外部装置(未图示)电连接的端子部43a，汇流条44具有与外部装置(未图示)电连接的端子部44a。另外，汇流条43、44以隔开1mm以下的间隔，并在上下方向上部分重合的方式配置。由此，当汇流条43、44中流通相互为反向的电流时，能够使由该电流引起的磁力线彼此抵消，使自感降低。
另外，在汇流条单元42，在端子部43a与44a之间设有与模塑树脂45一体的凹凸部45a。通过凹凸部45a，能够提高端子部43a与端子部44a之间的绝缘性，进而能够进一步提高复合模块41的绝缘性。
本实施方式的复合模块41并联连接有多个功率半导体模块，但能够根据用途以串联连接的方式进行汇流条单元的汇流条配置。
以上，使用附图以及实施方式，对本发明的功率半导体模块以及复合模块进行了具体的说明，但本发明的功率半导体模块以及复合模块并不限于实施方式以及附图所记载的内容，在不脱离本发明的主旨范围内，能够进行多种变形。
权利要求书(按照条约第19条的修改)
1.一种功率半导体模块，具备：
筐体，具有开口部；
电路板，收纳在所述筐体的内部；
半导体元件，在正面具有电极，背面被固定于所述电路板；
布线部件，将所述半导体元件的电极与所述电路板之间电连接；
第一盖，固定于所述筐体的开口部；
第二盖，固定于所述筐体的开口部，并且设置在比所述第一盖更靠近外侧的位置；
第一树脂，填充在所述第一盖与所述第二盖之间；
第二树脂，覆盖所述布线部件并具有露出面，所述露出面比所述第一盖更接近所述布线部件；
外部端子，一端电连接且机械连接到所述电路板，另一端比所述第二盖更向外侧突出；以及
罩，覆盖所述外部端子，并配置在所述第二树脂的露出面与所述第一盖之间。
2.根据权利要求1所述的功率半导体模块，其特征在于，在所述第一盖与所述第二盖之间，所述外部端子被所述第一树脂密封。
3.根据权利要求1所述的功率半导体模块，其特征在于，所述布线部件具有：
导电板，与所述半导体元件和所述电路板相向设置；以及
导电柱，一端电连接且机械连接到所述半导体元件的第二电极或所述电路板，另一端与所述导电板电连接且机械连接。
4.根据权利要求1所述的功率半导体模块，其特征在于，在所述筐体的外部的侧面具有凹凸。
5.根据权利要求1所述的功率半导体模块，其特征在于，所述第二盖在向外部突出的多个所述外部端子之间具有突起。
6.根据权利要求1所述的功率半导体模块，其特征在于，所述第一树脂和所述第二树脂为热固性树脂。
7.根据权利要求1所述的功率半导体模块，其特征在于，所述罩与所述筐体的内部的侧面分离设置。
8.根据权利要求1所述的功率半导体模块，其特征在于，所述半导体元件为在背面具有其他电极的纵型半导体元件，所述其他电极与所述电路板电连接且机械连接。
9.根据权利要求1所述的功率半导体模块，其特征在于，所述筐体包括框体和底板。
10.根据权利要求9所述的功率半导体模块，其特征在于，所述电路板为绝缘基板的一部分，所述绝缘基板固定于所述底板。
11.根据权利要求1所述的功率半导体模块，其特征在于，所述露出面与所述布线部件分离大约1mm。
12.一种复合模块，其特征在于，具备多个权利要求1所述的功率半导体模块，并具备将各功率半导体模块的所述外部端子彼此电连接的汇流条单元。
13.根据权利要求12所述的复合模块，其特征在于，所述汇流条单元是使多个汇流条以间隔开的方式部分地重叠而成。
14.根据权利要求13所述的复合模块，其特征在于，所述汇流条单元中的多个汇流条的间隔为1mm以下。
说明或声明(按照条约第19条的修改)
权利要求书的权利要求1，明确了第一树脂是填充在第一盖与所述第二盖之间的。
权利要求书的权利要求1的修改根据为说明书第【0032】段的记载内容。

Claims (14)

1.一种功率半导体模块，具备：
筐体，具有开口部；
电路板，收纳在所述筐体的内部；
半导体元件，在正面具有电极，背面被固定于所述电路板；
布线部件，将所述半导体元件的电极与所述电路板之间电连接；
第一盖，固定于所述筐体的开口部；
第二盖，固定于所述筐体的开口部，并且设置在比所述第一盖更靠近外侧的位置；
第一树脂，配置在所述第一盖与所述第二盖之间；
第二树脂，覆盖所述布线部件并具有露出面，所述露出面比所述第一盖更接近所述布线部件；
外部端子，一端电连接且机械连接到所述电路板，另一端比所述第二盖更向外侧突出；以及
罩，覆盖所述外部端子，并配置在所述第二树脂的露出面与所述第一盖之间。
2.根据权利要求1所述的功率半导体模块，其特征在于，在所述第一盖与所述第二盖之间，所述外部端子被所述第一树脂密封。
3.根据权利要求1所述的功率半导体模块，其特征在于，所述布线部件具有：
导电板，与所述半导体元件和所述电路板相向设置；以及
导电柱，一端电连接且机械连接到所述半导体元件的第二电极或所述电路板，另一端与所述导电板电连接且机械连接。
4.根据权利要求1所述的功率半导体模块，其特征在于，在所述筐体的外部的侧面具有凹凸。
5.根据权利要求1所述的功率半导体模块，其特征在于，所述第二盖在向外部突出的多个所述外部端子之间具有突起。
6.根据权利要求1所述的功率半导体模块，其特征在于，所述第一树脂和所述第二树脂为热固性树脂。
7.根据权利要求1所述的功率半导体模块，其特征在于，所述罩与所述筐体的内部的侧面分离设置。
8.根据权利要求1所述的功率半导体模块，其特征在于，所述半导体元件为在背面具有其他电极的纵型半导体元件，所述其他电极与所述电路板电连接且机械连接。
9.根据权利要求1所述的功率半导体模块，其特征在于，所述筐体包括框体和底板。
10.根据权利要求9所述的功率半导体模块，其特征在于，所述电路板为绝缘基板的一部分，所述绝缘基板固定于所述底板。
11.根据权利要求1所述的功率半导体模块，其特征在于，所述露出面与所述布线部件分离大约1mm。
12.一种复合模块，其特征在于，具备多个权利要求1所述的功率半导体模块，并具备将各功率半导体模块的所述外部端子彼此电连接的汇流条单元。
13.根据权利要求12所述的复合模块，其特征在于，所述汇流条单元是使多个汇流条以间隔开的方式部分地重叠而成。
14.根据权利要求13所述的复合模块，其特征在于，所述汇流条单元中的多个汇流条的间隔为1mm以下。
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